{"title":"1.55 /spl mu/m VCSELs的均匀光泵浦设计","authors":"J. Geske, J. Piprek","doi":"10.1109/NUSOD.2003.1259044","DOIUrl":null,"url":null,"abstract":"Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Uniform optical pumping design for 1.55 /spl mu/m VCSELs\",\"authors\":\"J. Geske, J. Piprek\",\"doi\":\"10.1109/NUSOD.2003.1259044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Uniform optical pumping design for 1.55 /spl mu/m VCSELs
Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.