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2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits最新文献

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A new approach to the design of high dynamic range tunable active inductors 一种设计高动态范围可调谐有源电感器的新方法
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745705
S. Del Re, G. Leuzzi, V. Stornelli
{"title":"A new approach to the design of high dynamic range tunable active inductors","authors":"S. Del Re, G. Leuzzi, V. Stornelli","doi":"10.1109/INMMIC.2008.4745705","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745705","url":null,"abstract":"In this paper a new method for the design of tunable grounded active inductors with high dynamic range is described. The tuning technique is based on the use of a passive tunable compensating network in combination with a highly linear non-tunable capacitance gyrator. The circuit has high linearity with moderate noise figure, resulting in a high dynamic range. A prototype of an active inductor is presented, together with its application in a simple tunable bandpass filter, demonstrating the performances of the active inductor. The filter has a centre frequency tunable from 880 MHz to 1100 MHz, a bandpass of approximately 20 MHz, a 17 dB noise figure and a 1 dB gain compression point between 5 dBm and 8 dBm. The resulting dynamic range in the given bandpass is 90 dB, allowing its use for example as an IF filter for high dynamic range applications.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128912899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Impact of Ron(VDD) dependence on polar transmitter residual distortion Ron(VDD)依赖性对极性发射机剩余畸变的影响
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745732
R. Marante, J. García, P. Cabral, J. Pedro
{"title":"Impact of Ron(VDD) dependence on polar transmitter residual distortion","authors":"R. Marante, J. García, P. Cabral, J. Pedro","doi":"10.1109/INMMIC.2008.4745732","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745732","url":null,"abstract":"In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"110 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124271149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Base-band predistortion linearization scheme of high efficiency power amplifiers for wireless applications 用于无线应用的高效功率放大器基带预失真线性化方案
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745731
V. Camarchia, P. Colantonio, S. Donati Guerrieri, R. Giofré, E. G. Lima, L. Piazzon, M. Pirola, R. Quaglia
{"title":"Base-band predistortion linearization scheme of high efficiency power amplifiers for wireless applications","authors":"V. Camarchia, P. Colantonio, S. Donati Guerrieri, R. Giofré, E. G. Lima, L. Piazzon, M. Pirola, R. Quaglia","doi":"10.1109/INMMIC.2008.4745731","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745731","url":null,"abstract":"The paper shows the impact of a base-band predistortion linearization scheme of high efficiency power amplifiers (HPAs) in terms of key parameters such as the adjacent channel power ratio (ACPR) and the average PA efficiency. Two HPAs are compared: an uneven GaN Doherty (DPA) and a 2nd harmonic tuned Si LD-MOS (LPA). The base-band behavioral models of the HPAs are based on the parallel Hammerstein approach, while the digital predistorter (DPD) is extracted employing the nonlinear autoregressive scheme with exogenous inputs. For the DPA with a W-CDMA signal with 3.5 dB peak to average power ratio (PAPR), the predistorter is capable of a 10 dB ACPR reduction, without decreasing the average efficiency, but the DPD effectiveness quickly degrades with high PAPR signals and back-off levels. Different behavior is observed for the LPA where the increase of the PAPR do not affect the DPD effectiveness. While fed with an extremely demanding W-CDMA 3GPP standard, the amelioration of the overall HPA performance in terms of back-off and efficiency are better than 10 dB of back-off and better than 15% concerning the average efficiency.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123197112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A new test bench to measure dynamic output I/V characteristics of FETs 一种测量场效应管动态输出I/V特性的试验台
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745726
W. Ciccognani, F. Giannini, E. Limiti, P. Longhi, A. Nanni, A. Serino
{"title":"A new test bench to measure dynamic output I/V characteristics of FETs","authors":"W. Ciccognani, F. Giannini, E. Limiti, P. Longhi, A. Nanni, A. Serino","doi":"10.1109/INMMIC.2008.4745726","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745726","url":null,"abstract":"In this paper a new test bench for the measurement of FETs dynamic output I/V characteristics is presented. The characterization is carried out generating asymmetrical voltage signals at the gate of the device while the load at the drain terminal is varied. The experimental results obtained performing on-wafer measurements of a 1 mm GaAs PHEMT using the proposed test bench, successfully compare with those carried out utilizing a conventional pulsed system.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129647067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design guidelines for image-rejection distributed mixers with composite right/left-handed transmission lines 带有复合右/左传输线的图像抑制分布式混频器的设计指南
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745744
J. Mata-Contreras, C. Camacho-Peñalosa, T. Martín-Guerrero
{"title":"Design guidelines for image-rejection distributed mixers with composite right/left-handed transmission lines","authors":"J. Mata-Contreras, C. Camacho-Peñalosa, T. Martín-Guerrero","doi":"10.1109/INMMIC.2008.4745744","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745744","url":null,"abstract":"Novel distributed mixer functionalities can be obtained by using artificial transmission lines with new dispersion diagrams. In particular, wideband distributed mixers with image-rejection capability are now possible. In this contribution, some relevant design guidelines of such mixers are discussed. The experimental performance of a mock-up of such a mixer is also presented.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128652252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs AlGaN/GaN hemt中温度相关通路电阻的表征
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745703
M. Thorsell, K. Andersson, M. Fagerlind, M. Sudow, P. Nilsson, N. Rorsman
{"title":"Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs","authors":"M. Thorsell, K. Andersson, M. Fagerlind, M. Sudow, P. Nilsson, N. Rorsman","doi":"10.1109/INMMIC.2008.4745703","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745703","url":null,"abstract":"The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134487482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multi-octave high efficiency power amplifier in GaAs technology GaAs技术中的多倍频程高效功率放大器
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745736
C. Cardente, P. Colantonio, F. Di Paolo, F. Giannini, R. Giofré
{"title":"Multi-octave high efficiency power amplifier in GaAs technology","authors":"C. Cardente, P. Colantonio, F. Di Paolo, F. Giannini, R. Giofré","doi":"10.1109/INMMIC.2008.4745736","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745736","url":null,"abstract":"A 2-18 GHz MMIC power amplifier has been simulated in GaAs technology, based on a non-uniform distributed transmission line topology. The resulting circuit is a non-uniform distributed power amplifier (NDPA), which uses the power pHEMT process available at WIN semiconductor. The NDPA has been optimized for maximum power and efficiency, and it exhibits 1W (CW) output power, 27% medium drain efficiency and 23% medium PAE in the whole operating bandwidth. The resulting small signal gain is 10 dB. Stability analysis has been performed for internal loops also, resulting in an unconditionally stable amplifier. Considering the available results in literature for similar design, the proposed NDPA gives the highest performances in terms of efficiency and output power in the 2-18 GHz operating bandwidth.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125204704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling of temperature and dispersion effects in MESFET and HEMT transistors MESFET和HEMT晶体管中温度和色散效应的建模
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745745
M. Chaibi, T. Fernandez, J. R. Tellez, A. Tazón, M. Aghoutane
{"title":"Modelling of temperature and dispersion effects in MESFET and HEMT transistors","authors":"M. Chaibi, T. Fernandez, J. R. Tellez, A. Tazón, M. Aghoutane","doi":"10.1109/INMMIC.2008.4745745","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745745","url":null,"abstract":"In this paper, an accurate technique to model temperature, bias, and frequency dispersion effects in MESFET and HEMT transistors is presented. The approach is based on a single drain to source current source I ds nonlinear model. Pulsed I/V characteristics measurements are used to model bias and frequency dispersion effects while temperature is directly implemented in the I ds equation. Model parameters extraction strategy is simple, being based just on a few measurements. The approach validity is verified by comparing the simulated and measured I/V characteristics of the device tested under continuous and pulsed excitation. Large-signal simulation results show that the model can efficiently predict the output power under different bias and temperature conditions.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"395 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131514107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Compensation of transmitter distortion using a nonlinear modeling approach 用非线性建模方法补偿发射机失真
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745734
H. Cao, A. S. Tehrani, C. Fager, T. Eriksson, H. Zirath
{"title":"Compensation of transmitter distortion using a nonlinear modeling approach","authors":"H. Cao, A. S. Tehrani, C. Fager, T. Eriksson, H. Zirath","doi":"10.1109/INMMIC.2008.4745734","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745734","url":null,"abstract":"In this paper, a nonlinear modeling approach is used to demonstrate a joint compensation scheme for the linear and nonlinear distortions in the I/Q modulator and the power amplifier. Based on this nonlinear model, a digital pre-compensator is constructed. The effects of these two most dominant nonlinear components in a modern transmitter can therefore be digitally pre-compensated in a single step. The results are verified by experiments, and the proposed approach shows promising performance.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128175694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Active envelope load pull system suitable for high modulation rate multi-tone applications 有源包络负载牵引系统适用于高调制速率多音应用
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745724
M. Hashmi, S. Hashim, S. Woodington, T. Williams, J. Benedikt, P. Tasker
{"title":"Active envelope load pull system suitable for high modulation rate multi-tone applications","authors":"M. Hashmi, S. Hashim, S. Woodington, T. Williams, J. Benedikt, P. Tasker","doi":"10.1109/INMMIC.2008.4745724","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745724","url":null,"abstract":"Power amplifiers used in modern wireless systems need to efficiently transmit signals, without distortion, that have complex envelopes with variable phase and amplitude. The design of these power amplifiers require that transistors are characterized under complex excitations into variable load impedances, so that determination of perfect matching conditions for optimum performance is achieved. This paper presents a new active load pull system design, based on the envelope load-pull concept, which can provide for the required load-pull capability under high modulation rate multi-tone excitations. This performance is realized by incorporating analogue controlled delay elements into the envelope feedback loop to compensate for the inherent group delay encountered in the feedback loop. Measurements on a ldquoThrurdquo using this active load-pull system have demonstrated that it can provide constant, drive independent control of load impedances for multi-tone characterization of transistors and power amplifiers used in wireless communication systems such as GSM-EDGE.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126392071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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