W. Ciccognani, F. Giannini, E. Limiti, P. Longhi, A. Nanni, A. Serino
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引用次数: 0
摘要
本文介绍了一种用于测量场效应管动态输出I/V特性的试验台。当漏极端的负载变化时，在器件的栅极处产生不对称的电压信号。实验结果表明，利用所提出的测试平台对1 mm GaAs PHEMT进行了晶圆上测量，并与传统脉冲系统进行了比较。
A new test bench to measure dynamic output I/V characteristics of FETs
In this paper a new test bench for the measurement of FETs dynamic output I/V characteristics is presented. The characterization is carried out generating asymmetrical voltage signals at the gate of the device while the load at the drain terminal is varied. The experimental results obtained performing on-wafer measurements of a 1 mm GaAs PHEMT using the proposed test bench, successfully compare with those carried out utilizing a conventional pulsed system.
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