Ron(VDD)依赖性对极性发射机剩余畸变的影响

2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI:10.1109/INMMIC.2008.4745732

R. Marante, J. García, P. Cabral, J. Pedro

{"title":"Ron(VDD)依赖性对极性发射机剩余畸变的影响","authors":"R. Marante, J. García, P. Cabral, J. Pedro","doi":"10.1109/INMMIC.2008.4745732","DOIUrl":null,"url":null,"abstract":"In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"110 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Ron(VDD) dependence on polar transmitter residual distortion\",\"authors\":\"R. Marante, J. García, P. Cabral, J. Pedro\",\"doi\":\"10.1109/INMMIC.2008.4745732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.\",\"PeriodicalId\":205987,\"journal\":{\"name\":\"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits\",\"volume\":\"110 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INMMIC.2008.4745732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INMMIC.2008.4745732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文特别考虑了开关器件导通电阻随漏极电源电压Ron(VDD)变化对极性变送器畸变的影响。GaN HEMT上的脉冲I/V测量结果用于预测Vdd-to-AM调制曲线的偏差。在存在其他非理想性的情况下，系统级计算允许评估这种频率色散相关效应的相对贡献。

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Impact of Ron(VDD) dependence on polar transmitter residual distortion

In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution of this frequency dispersion related effect.

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2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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