AlGaN/GaN hemt中温度相关通路电阻的表征

2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI:10.1109/INMMIC.2008.4745703

M. Thorsell, K. Andersson, M. Fagerlind, M. Sudow, P. Nilsson, N. Rorsman

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引用次数: 3

摘要

研究了AlGaN/GaN hemt的通路电阻与温度的关系。利用红外显微镜测量了材料的自热性，并提取了不同环境温度下的接触电阻。研究了它们对固有小信号参数随偏置和环境温度的影响。

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Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs

The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.

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2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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