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2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits最新文献

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Advances on modelling and characterization of microwave devices at XLIM laboratory XLIM实验室微波器件建模与表征研究进展
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745699
J. Nallatamby, J. Obregon, J. Nebus, M. Prigent, R. Quéré
{"title":"Advances on modelling and characterization of microwave devices at XLIM laboratory","authors":"J. Nallatamby, J. Obregon, J. Nebus, M. Prigent, R. Quéré","doi":"10.1109/INMMIC.2008.4745699","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745699","url":null,"abstract":"During last decade the number of microwave applications augmented in an impressive manner. So, design libraries must include device models more and more versatile. In our presentation we will describe the endeavour undertaken at XLIM laboratory (formerly IRCOM laboratory), in the area of the modelling and characterization of semiconductor microwave devices in order to develop accurate models for the design of modern microwave applications.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"163 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123560559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of nonlinear behavioral models with OFDM signals 基于OFDM信号的非线性行为模型的性能
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745727
J. Reina-Tosina, C. Crespo-Cadenas, M. J. Madero-Ayora, J. Muñoz-Cruzado-Alba
{"title":"Performance of nonlinear behavioral models with OFDM signals","authors":"J. Reina-Tosina, C. Crespo-Cadenas, M. J. Madero-Ayora, J. Muñoz-Cruzado-Alba","doi":"10.1109/INMMIC.2008.4745727","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745727","url":null,"abstract":"In this paper we have tested different Volterra-based behavioral models for wideband power amplifiers (PAs) using an OFDM probing signal. Two PAs have been widely characterized and the measured output complex envelopes have been compared with the model predictions in terms of the normalized mean square error, spectral regrowth and the adjacent channel error power ratio.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115745863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new approach for concurrent Dual-Band IF Digital PreDistortion: System design and analysis 并行双频中频数字预失真的新方法:系统设计与分析
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745733
A. Cidronali, I. Magrini, R. Fagotti, G. Manes
{"title":"A new approach for concurrent Dual-Band IF Digital PreDistortion: System design and analysis","authors":"A. Cidronali, I. Magrini, R. Fagotti, G. Manes","doi":"10.1109/INMMIC.2008.4745733","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745733","url":null,"abstract":"In this paper we propose a dual band digital predistorter (DB-DPD), suitable for concurrent dual-band power amplifiers. A sub-sampling receiver is at the basis of the feedback path, while the vectorial gain adjuster is achieved at the proper digital intermediate frequency. The proposed method adopts a conventional memory polynomial DPD for linearization. The approach is tested by system-level simulations and it was proven to be able to correct most of the nonlinearity, with only a modest performance loss with respect to single-band architectures.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129358275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations 210w LDMOS射频功率晶体管，适用于2.2 GHz蜂窝应用，具有LTE基站功能
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745707
S. De Meyer, H. Beaulaton
{"title":"A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations","authors":"S. De Meyer, H. Beaulaton","doi":"10.1109/INMMIC.2008.4745707","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745707","url":null,"abstract":"This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129419069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Interference cancellation: New configuration technique for cancellation of strong interferences from adjacent frequency bands. 干扰消除:消除邻近频段强干扰的新配置技术。
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745716
H.C. Gomes, N. Carvalho
{"title":"Interference cancellation: New configuration technique for cancellation of strong interferences from adjacent frequency bands.","authors":"H.C. Gomes, N. Carvalho","doi":"10.1109/INMMIC.2008.4745716","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745716","url":null,"abstract":"This paper presents a study on existing techniques on cancellation of strong interference in frequency bands adjacent to the radio receivers. It also proposed a new configuration for cancellation of this strong interference, merging techniques known with a new model developed. The idea is to build an end cancellation/attenuation interference of affordable sub-system, that is universal and adjustable to the technology of radio frequency used by the receiver (compensating the intermodulation distortion created in LNA).","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124475022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced efficiency of envelope-tracking based broadband inverse Class-E power amplifier 提高了基于包络跟踪的宽带反e类功率放大器的效率
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745742
M. Thian, P. Gardner
{"title":"Enhanced efficiency of envelope-tracking based broadband inverse Class-E power amplifier","authors":"M. Thian, P. Gardner","doi":"10.1109/INMMIC.2008.4745742","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745742","url":null,"abstract":"In this paper, the envelope-tracking technique is exploited to boost average efficiency of the newly introduced broadband Inverse Class-E power amplifier. A 2.26 GHz - 20.5 dBm - 3 V power amplifier was designed, constructed, and measured. For a multi-carrier input signal with 10 dB peak-to-average ratio, the average PAE was increased from 5.7% to 54.5%.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128056403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Breakdown walkout investigation in electron devices under nonlinear dynamic regime 非线性动态环境下电子器件的击穿失效研究
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745701
V. Di Giacomo, S. Di Falco, A. Raffo, P. Traverso, A. Santarelli, G. Vannini, F. Filicori
{"title":"Breakdown walkout investigation in electron devices under nonlinear dynamic regime","authors":"V. Di Giacomo, S. Di Falco, A. Raffo, P. Traverso, A. Santarelli, G. Vannini, F. Filicori","doi":"10.1109/INMMIC.2008.4745701","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745701","url":null,"abstract":"In this paper, the breakdown walkout in microwave electron devices is investigated by means of a recently proposed measurement set-up. This innovative setup allows to apply a stress procedure not only in classical static conditions, but also under dynamic regime by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device. As a matter of fact, for the very first time, experimental data can be collected for fully investigating the walkout behaviour under both static and dynamic operations.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125984755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adaptive Digital Front-End enhanced CMOS-based RF transceivers A brief overview 自适应数字前端增强型基于cmos的射频收发器简介
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745729
L. Maurer
{"title":"Adaptive Digital Front-End enhanced CMOS-based RF transceivers A brief overview","authors":"L. Maurer","doi":"10.1109/INMMIC.2008.4745729","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745729","url":null,"abstract":"The idea of a ldquosoftware defined radiordquo (SDR) as proposed J. Mitola was quite a provoking vision beginning of the dasia90s. Even though the ideal SDR architecture mainly remained a subject of academic study so far it anticipated the need for an increased capability to reconfigure the RF-transceiver itself. This article gives a brief overview on the developments of cellular RF-transceivers during the last years in the light of the aforementioned need for reconfigurability. It specifically addresses the architectural changes that were on the one hand necessitated due to upcoming multi-system/multi-mode/multiband requirements and on the other hand favored by the step towards CMOS as mainstream technology even for the analog intensive RF-transceiver.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122268545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier 宽带分布式功率放大器用AlGaN/GaN级联电池的功率和热设计准则
2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits Pub Date : 2008-11-01 DOI: 10.1109/INMMIC.2008.4745738
A. Martin, T. Reveyrand, M. Campovecchio, R. Quéré, O. Jardel, S. Piotrowicz
{"title":"Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier","authors":"A. Martin, T. Reveyrand, M. Campovecchio, R. Quéré, O. Jardel, S. Piotrowicz","doi":"10.1109/INMMIC.2008.4745738","DOIUrl":"https://doi.org/10.1109/INMMIC.2008.4745738","url":null,"abstract":"This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitively-coupled 4-18 GHz distributed amplifier.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129861282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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