A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations

Abstract

This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.