{"title":"210w LDMOS射频功率晶体管，适用于2.2 GHz蜂窝应用，具有LTE基站功能","authors":"S. De Meyer, H. Beaulaton","doi":"10.1109/INMMIC.2008.4745707","DOIUrl":null,"url":null,"abstract":"This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.","PeriodicalId":205987,"journal":{"name":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations\",\"authors\":\"S. De Meyer, H. Beaulaton\",\"doi\":\"10.1109/INMMIC.2008.4745707\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.\",\"PeriodicalId\":205987,\"journal\":{\"name\":\"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INMMIC.2008.4745707\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INMMIC.2008.4745707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 210 W LDMOS RF power transistor for 2.2 GHz cellular applications with enabling features for LTE base stations
This paper presents the first 210 W silicon LDMOS single-ended RF power transistor designed in a NI-780 package for 2.2 GHz cellular applications. This device is showing a flat power gain over three times the band : under a WCDMA 3GPP signal, it exhibits a gain variation of 1.1 dB over 180 MHz bandwidth. A special focus was put on the video bandwidth performance during the design phase, leading to a figure of 60 MHz, suitable for LTE base stations. Some LTE data are shown in this paper. A product model has been derived and validation is also presented here.
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