Physica E-low-dimensional Systems & Nanostructures最新文献

{"title":"Overall water splitting of type-I vdW heterojunction ZnS/Ga2SSe","authors":"Taiyu Hao ,&nbsp;Qingyi Feng ,&nbsp;Biyi Wang ,&nbsp;Zhiwei Li ,&nbsp;Bo Li ,&nbsp;Hongxiang Deng","doi":"10.1016/j.physe.2024.116130","DOIUrl":"10.1016/j.physe.2024.116130","url":null,"abstract":"<div><div>In the domain of photocatalysis, type I heterojunctions have received limited attention, and the quest for effective type I photocatalysts persists. This study introduces a novel type I heterostructure, ZnS/Ga₂SSe, and gives a systematic investigation of its electronic properties, optical properties, and photocatalytic performance by DFT calculations. Electronic properties show that ZnS/Ga₂SSe system has a type I band alignment with a 2.26 eV band gap. Different from traditional type I heterostructure, ZnS/Ga₂SSe has an obvious interfacial electric field and a potential barrier, which promotes spatial charge separation and addresses the drawback of easy recombination of photo-generated carriers in traditional type I heterojunctions. The calculated results of Gibbs free energy show that under the 3.3 eV external potential and pH = 14, water splitting reaction can be achieved spontaneously. Moreover, the heterojunction shows good optical absorption in visible regions and 22.28 % STH efficiency which is higher than the reported type I photocatalysts. The biaxial strain can modulate the electronic structure and maintain type I alignment. Tensile can reduce the bandgap and enhance optical absorption, while compression is the opposite. Under 4 % tensile, STH efficiency can reach 40.3 %, while −4 % compression it will decrease to 10.3 %. These conclusions underline the potential of the ZnS/Ga₂SSe heterojunction as a promising photocatalytic material candidate for water splitting and type I heterojunctions is worth exploring as photocatalysis.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116130"},"PeriodicalIF":2.9,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The key role of anti-solvent temperature in quantum dot/perovskite core-shell nanowire array solar cells","authors":"Yin Ren ,&nbsp;Lin He ,&nbsp;Yunfei He ,&nbsp;Yahong Wang ,&nbsp;Sisi Li ,&nbsp;Luming Zhou ,&nbsp;Peng Ye ,&nbsp;Rongli Gao ,&nbsp;Gang Chen ,&nbsp;Wei Cai ,&nbsp;Chunlin Fu","doi":"10.1016/j.physe.2024.116131","DOIUrl":"10.1016/j.physe.2024.116131","url":null,"abstract":"<div><div>Combining perovskite with infrared quantum dots to construct a core-shell nanostructure nanowire array solar cell can increase the light absorption range and enhance the light absorption and carrier transport efficiency of the solar cell. However, the preparation of a perovskite absorber layer on a nanowire array with quantum dots often presents issues such as high roughness and a large number of lattice defects, which have a negative impact on the photovoltaic performance. The anti-solvent method is a commonly used technique to improve the quality of perovskite. The temperature variation of the anti-solvent can change solubility, and influence the reaction rate and crystal formation process of perovskite, thus affecting its photovoltaic performance. In this study, the quality of perovskite in the core-shell nanostructure nanowire array was improved by controlling the temperature of the anti-solvent (toluene). Experimental results show that as the temperature of toluene increases, the photovoltaic performance is gradually improved. When the toluene temperature was maintained at 75 °C, the device exhibited significantly improved photovoltaic performance with an efficiency of 12.64 %, surpassing the efficiency obtained without any anti-solvent modification. As the temperature of the anti-solvent increases, the absorption of visible and near-infrared light spectrum by the nanowire arrays is enhanced, which promotes the efficient generation of photo-generated carriers. Furthermore, defects in the nanowire arrays gradually decrease, leading to a reduction in carrier recombination. These findings provide valuable insights for advancing core-shell nanostructure nanowire array solar cells.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116131"},"PeriodicalIF":2.9,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study of NiO based core-shell nanocomposites to high performance supercapacitor electrode materials","authors":"Jhalak Gupta ,&nbsp;Arham S. Ahmed ,&nbsp;Pushpendra ,&nbsp;Ameer Azam","doi":"10.1016/j.physe.2024.116121","DOIUrl":"10.1016/j.physe.2024.116121","url":null,"abstract":"<div><div>In this research work, we prepared NiO@SnO₂ (N1), NiO@ZnO (N2) and NiO@MnO₂ (N3) core-shell nanocomposites using sol-gel route. Prepared samples were investigated for their different properties employing various characterization techniques. The morphology and structure of the nanocomposites were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform Infrared Spectroscopy, X-ray diffraction analysis. Furthermore, the optical properties were analyzed using UV–Vis Spectroscopy, Photoluminescence Spectroscopy. In addition, the supercapacitive performances were examined by cyclic voltammogram (CV), galvanostatic charge-discharge(GCD) and electrochemical impedance spectroscopy (EIS). The electrochemical results indicate that all the prepared composites exhibits good electrochemical performance but N2 depicts superior results among all. The specific capacitance obtained for N2 is 720 F/g at 1 A g⁻¹ and excellent cycling stability (96.5 % retention after 6000 cycles at 1 A g⁻¹). Therefore, this wok offers meaningful reference for supercapacitor applications in the future.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116121"},"PeriodicalIF":2.9,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulation of electronic and thermal properties of boron phosphide nanotubes under electric and magnetic fields","authors":"Nooshin Rashidi ,&nbsp;Rostam Moradian","doi":"10.1016/j.physe.2024.116125","DOIUrl":"10.1016/j.physe.2024.116125","url":null,"abstract":"<div><div>This work theoretically investigates the thermoelectric properties of boron phosphide nanotubes (BPNTs) using the tight-binding model, Green function method, and Kubo formalism, focusing on a zigzag BPNT with indices (20, 0). The tight binding parameters obtained by matching its band structure with calculated density functional theory band structure. The study examines the effects of transverse electric fields and axial magnetic fields on various physical properties, such as band structure, density of states (DOS), heat capacity, magnetic susceptibility, and other thermoelectric properties. BPNTs consistently show semiconducting properties with a nearly 1 eV direct band gap. The electronic properties of BPNTs are significantly affected by applied electric field, which at very strong strengths can induce a semiconducting to metallic phase transition. In contrast, the magnetic field leads to the splitting of energy bands, especially around the Fermi level. The DOS also changes with the electric field, including variations in the position, intensity, and number of DOS peaks. The thermal properties and thermoelectric performance of BPNTs are temperature-dependent. Increasing of excited electrons thermal energy cause more occupation of high energy levels in the conduction bands. The electric field further enhances the thermal properties of BPNTs by modifying their electronic properties and reducing the band gap. Stronger electric fields cause a noticeable enhancement in the BPNTs thermal properties because it is increasing the concentration of excited charge carriers. This aspect is crucial for improving the thermoelectric efficiency of BPNTs, making them more competitive for practical applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116125"},"PeriodicalIF":2.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A metasurface for linear-to-circular polarization conversion and sensing based on quasi-BIC","authors":"Fa-Zhan Liu,&nbsp;Si-Yuan Liao,&nbsp;Qi-Juan Li,&nbsp;Jing-Wei Huang,&nbsp;Hai-Feng Zhang","doi":"10.1016/j.physe.2024.116128","DOIUrl":"10.1016/j.physe.2024.116128","url":null,"abstract":"<div><div>This work presents a multifunctional metastructure (MS) which realizes linear to circular polarization conversion and sensing function based on quasi-bound states in the continuum (quasi-BIC). MS is made of silicon dioxide as substrate, and silicon as surface material, by etching cross holes and square holes on it to form a 2×2 structure, through the transmission of terahertz (THz) band, to form an ultrahigh quality factor (<em>Q</em>-factor), and realize the conversion of linearly polarized waves to circularly polarized ones. At 178.190 THz, it achieves a <em>Q</em> value of 2969, and in the range 178.193 TH to 178.200 THz, the axial ratio (AR) is less than 3 dB and the insertion loss is less than 0.0001. In addition, by changing the permittivity of the surrounding environment, the minimum of the output wave will produce a good linear frequency shift. Using this feature, the given device can also be used as a dielectric constant sensor to detect air quality. The device has a sensing sensitivity (<em>S</em>) of 6.415 THz RIU⁻¹ and a figure of merit (<em>FOM</em>) of 106.9. The parameters (<em>H</em>, <em>w</em>₂, <em>L</em>₂, <em>g</em>₂), incidence angle (<em>θ</em>) and the polarization angle (<em>φ</em>) are discussed. The effects of different parameters on the <em>Q</em>-factor and AR were analyzed, which helped to select the optimal parameters. The design can also be used in communication and biosensing.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116128"},"PeriodicalIF":2.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of spintronic devices based on adjustable half-metallicity induced by electric field in A-type antiferromagnetic bilayer NiI2","authors":"Shao-Chong Yin ,&nbsp;Jing-Xin Yu ,&nbsp;Xiu-Ying Liu ,&nbsp;Xiao-Dong Li ,&nbsp;Jing Chang","doi":"10.1016/j.physe.2024.116129","DOIUrl":"10.1016/j.physe.2024.116129","url":null,"abstract":"<div><div>Exploring the attainment of half-metallic behavior in two-dimensional (2D) materials through external perturbations is a popular area of current research. In this work, we demonstrate, using first-principles calculations, that bilayer NiI₂ (bi-NiI₂) is an A-type antiferromagnetic (AFM) semiconductor with an indirect bandgap of 0.86 eV, with the most stable configuration being the AB stacking mode. Upon the application of a vertical electric field, the material transforms from its original semiconducting state into a half-metallic state. Moreover, the spin polarization reverses its orientation whenever the direction of the electric field is altered. This intriguing behavior has inspired us to design a spintronic device based on the A-type AFM bi-NiI₂. By employing nonequilibrium Green's function (NEGF) combined with density functional theory (DFT) calculations, we find that the device achieves ON/OFF switching by applying vertical electric fields in parallel or anti-parallel configurations in the two leads. The device displays 100 % spin polarization in the parallel configuration (PC) scenario, driven by bias voltage or temperature differences. Utilizing either the parallel or antiparallel configuration (APC) for ON/OFF switching enables the device to exhibit tunneling magnetoresistance (TMR) of up to 1.45 × 10¹⁰ % due to bias voltage and up to 10¹¹ % thermal TMR arising from temperature differences between the leads. These findings highlight the potential of NiI₂ and A-type AFM bilayers in the design of spintronic devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116129"},"PeriodicalIF":2.9,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resonant tunneling properties of laser dressed hyperbolic Pöschl-Teller double barrier potential","authors":"Mehmet Batı","doi":"10.1016/j.physe.2024.116126","DOIUrl":"10.1016/j.physe.2024.116126","url":null,"abstract":"<div><div>We examine the resonant tunneling properties of the laser-dressed hyperbolic Pöschl-Teller double quantum barrier structure. We use the non-equilibrium Green's function method to investigate structure parameters and electric field bias on the transmission properties of the system. The transmission probabilities and resonance energy levels are significantly influenced by the well widths and barrier heights. The barrier height increases, resonance energy levels shift toward higher values, and the resonance peak width narrows, leading to sharper and more selective tunneling behavior. Our results show that increasing the electric field bias leads to a decrease in the transmission probability at the first resonance peak, but this effect is not as strong for the subsequent peaks. Moreover, we find that changes in the laser field's parameter and structure parameters allow for fine control over the electronic spectra, allowing for modifications like red or blue shifts based on particular needs. The significance of comprehending the interaction among structural factors, external fields, and transmission qualities in quantum barrier structures is highlighted by our research, providing valuable information for the development and enhancement of electronic and optoelectronic systems with customized functionality. Our findings show the laser field has a considerable impact on resonant tunneling properties, opening the door to new device applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116126"},"PeriodicalIF":2.9,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neutral donors confined in semiconductor coupled quantum dot-rings: Position-dependent properties and optical transparency phenomenon","authors":"N. Hernández ,&nbsp;R.A. López-Doria ,&nbsp;Y.A. Suaza ,&nbsp;M.R. Fulla","doi":"10.1016/j.physe.2024.116122","DOIUrl":"10.1016/j.physe.2024.116122","url":null,"abstract":"<div><div>Electronic properties of a neutral donor confined in a <span><math><mi>GaAs</mi></math></span> coupled quantum dot-ring covered by a <span><math><mrow><msub><mrow><mi>Al</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub><msub><mrow><mi>Ga</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn></mrow></msub><mi>As</mi></mrow></math></span> matrix were calculated using the finite element method under the effective mass and the envelope function approximations. The proposed model is set up to fit a realistic coupled quantum dot-ring geometry revealed by atomic force microscopy images. The results show that the energy levels and the transition energies in the presence of an electric field strongly depend on the donor center’s angular position. Furthermore, the total optical absorption coefficient is calculated within the two-level approximation and the matrix density formalism. The absorption spectrum shows that the system can be tuned between 5 and <span><math><mrow><mn>30</mn><mspace></mspace><mi>meV</mi></mrow></math></span>. Also, an optical transparency effect for different configurations characterized by specific donor center’s angular positions and electric field values is seen. Finally, a novel redshift is observed when the sample temperature increases.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116122"},"PeriodicalIF":2.9,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation of Valence electron structure and properties of monolayer graphene and MX2 (M=Mo, W; X=S, Se, Te): Empirical Electron Theory (EET) investigation","authors":"Xinze Wang,&nbsp;Yongquan Guo,&nbsp;Boyang Li,&nbsp;Yichen Feng,&nbsp;Wei Tang","doi":"10.1016/j.physe.2024.116124","DOIUrl":"10.1016/j.physe.2024.116124","url":null,"abstract":"<div><div>The atomically thin layers of transition-metal dichalcogenide (TMDC) materials have garnered considerable attention due to their exceptional electrical, optical, mechanical, and thermal properties. Hence, it is important to investigate the mechanism of their excellent properties. In this paper, the study is focused on the correlation between valence electron structures (VESs) and mechanical as well as thermal properties of graphene and MX₂ (M = Mo, W; X = S, Se, Te) for revealing their essential mechanisms of properties with an empirical electron theory (EET). A model of Young's modulus is built for the monolayer graphene and MX₂ (M = Mo, W; X = S, Se, Te) based on the VES, which has been verified by the observed ones of elements in the 4th to 6th periods in the periodic table of elements. The calculated bond lengths and mechanical and thermal properties of graphene and MX₂ are in good agreement with experimental ones. The study reveals that the thermal and mechanical properties of MX₂ strongly depend on their valence electron structures. It shows that the melting point, cohesive energy, thermal conductivity, and Young's modulus are modulated by covalence electron pair <em>n</em>_<em>A</em>, the averaged covalence electron per atom <em>n</em>_<em>c</em>/atom, covalence electron pair <em>n</em>_<em>A</em> and linear density of covalent electron on the strongest bond <em>ρ</em>_<em>l</em>, respectively. The study helps explain the thermal and mechanical properties of two-dimensional (2D) materials and also supplies a reference for their design with high performance by modulating their valence electron structures.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116124"},"PeriodicalIF":2.9,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142425335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-layer nanoring array-based ultra-wideband solar absorber for photothermal conversion","authors":"Jiaxing Jiang ,&nbsp;Yingting Yi ,&nbsp;Qianju Song ,&nbsp;Zao Yi ,&nbsp;Can Ma ,&nbsp;Qingdong Zeng ,&nbsp;Tangyou Sun ,&nbsp;Shubo Cheng ,&nbsp;Yougen Yi ,&nbsp;Majid Niaz Akhtar","doi":"10.1016/j.physe.2024.116123","DOIUrl":"10.1016/j.physe.2024.116123","url":null,"abstract":"<div><div>In this work, based on the finite difference time domain method, we propose and investigate an efficient nanoscale solar absorber based on multilayer nanorings. The absorber is made up of a 4-layer TiO₂-TiN nanoring array, a TiO₂ insulating layer and a Ti substrate, all of which are high-melting materials. The absorber exhibits an absorption efficiency surpassing 95 % across a wavelength span of 280–4000 nm, thereby attaining a bandwidth of 3720 nm. Additionally, it maintains an average absorption efficiency of 98.8 % throughout the entire wavelength spectrum. Furthermore, calculations reveal that the absorber possesses a solar spectrum-weighted absorption of up to 99 %. The analysis of the electric field distribution indicates that the observed intense absorption is attributed to the plasmonic resonance phenomenon, along with the near-field coupling effects exhibited by the multi-turn nanorings. In addition, our calculations revealed a remarkably high thermal radiation efficiency for this absorber, specifically 99.2 % at 2000 K and 98.9 % at 1500 K, respectively. Therefore, we then calculated the photothermal conversion efficiency of the absorber. At the solar concentration factor C = 1000, the photothermal conversion efficiency surpasses 90 % across the entire temperature range. At C = 100, it is still greater than 80 % at 1000 K. At C = 10, it is still greater than 80 % at 700 K. And at C = 1, it is still greater than 80 % at 500 K. These results indicate that absorbers can be used in a variety of environments. Furthermore, the absorber sustains its superior absorption capabilities at wider solar radiation angles, demonstrating insensitive properties to polarization variations and robust tolerance to manufacturing inaccuracies. These exceptional attributes render it highly suited for diverse applications in solar energy harvesting and photothermal transformation.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"165 ","pages":"Article 116123"},"PeriodicalIF":2.9,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142534818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}