{"title":"Theoretical study of the density of states and thermal properties of Cd1-xMnxTe quantum wire under the combined effects of the applied magnetic field, spin orbit coupling and exchange effects","authors":"Diana Dahliah, Asad Shendi, Mohammad Elsaid","doi":"10.1016/j.physe.2025.116326","DOIUrl":"10.1016/j.physe.2025.116326","url":null,"abstract":"<div><div>This study investigates the electronic, thermal, and magnetocaloric properties of the diluted magnetic semiconductor Cd<sub>1-x</sub>Mn<sub>x</sub>Te in quantum wire (QW) geometry. We solve the Hamiltonian for an electron confined in a cylindrical quantum wire under an external magnetic field, incorporating the Rashba spin–orbit interaction (SOI) and exchange interactions. The resulting energy dispersion relations are used to calculate the electronic structure, Landau levels and the density of states (DOS). Our analysis shows that the DOS is strongly influenced by the combined effects of spin splitting, Rashba SOI, exchange interaction, and magnetic field strength. By tuning these parameters, the DOS <em>pattern can be optimized</em> for specific spintronic applications. The magnetocaloric effect (MCE) is explored, revealing a pronounced MCE behavior in the low-temperature regime (T < 70 K). The results demonstrate that the magnetic and thermodynamic properties of Cd<sub>1-x</sub>Mn<sub>x</sub>Te quantum wires can be precisely modulated by adjusting the SOI strength, exchange interaction, temperature, and wire confinement. This tunability <em>highlights</em> the potential of this material for low-temperature spintronic applications, magnetic refrigeration technologies.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116326"},"PeriodicalIF":2.9,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144579400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Allhibi , F. Aljuaydi , H.A. Hessian , A.-B.A. Mohamed
{"title":"Thermal behavior of two-nanowire-qubits states: Local quantum Fisher information and local quantum uncertainty","authors":"H. Allhibi , F. Aljuaydi , H.A. Hessian , A.-B.A. Mohamed","doi":"10.1016/j.physe.2025.116317","DOIUrl":"10.1016/j.physe.2025.116317","url":null,"abstract":"<div><div>This study investigates the generation and robustness of thermal nanowire quantum correlations (NWQCs) within a 2D electron gas system in an InAs quantum nanowire. The system is with a parabolic harmonic confinement potential, a perpendicular magnetic field, Rashba spin–orbit (RSO) coupling, and an external electric field. Using local quantum Fisher information (LQFI), local quantum uncertainty (LQU), and logarithmic negativity, the thermal quantum correlations are studied to account for Rashba spin–orbit coupling and magnetic field effects in both the absence and presence of external electric fields. It is found that enhancing thermal nanowire quantum correlations (NWQCs) can be achieved by reducing Rashba spin–orbit coupling and the strengths of external magnetic and electric fields. In our study, we investigate how Rashba spin–orbit coupling and external magnetic and electric fields affect the thermal nanowire quantum correlations generated at a given bath temperature. Furthermore, decreasing the couplings of the RSO interaction, magnetic field, or electric field reduces the thermal NWQCs’ dependence on each of these factors. The results show that the intensity of the external magnetic field and Rashba spin–orbit interaction control the symmetric dependence of thermal nanowire quantum correlations on the electric field coupling.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116317"},"PeriodicalIF":2.9,"publicationDate":"2025-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144518464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Controlled-phase gate in exchange coupled quantum dots affected by quasistatic charge noise","authors":"Yinan Fang","doi":"10.1016/j.physe.2025.116319","DOIUrl":"10.1016/j.physe.2025.116319","url":null,"abstract":"<div><div>Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled-phase gate for spin qubits that defined on a double quantum dot. Analytical expressions for the noise averaged Hamiltonian, exchange interaction, as well as the gate fidelity are derived for weak noise covering experimental relevant regime. We also perform interleaved two-qubit randomized benchmarking analysis for the controlled-phase gate and show that an exponential decay of the sequential fidelity is still valid for the weak noise.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116319"},"PeriodicalIF":2.9,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144549580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bo Song , Kun Cai , Liang Bian , Zhu-Hua Yan , Qing-Hua Qin
{"title":"Tunable morphology of graphyne/graphene nanoscrolls via self-scrolling of nanoribbons on a CNT: A theoretical prediction","authors":"Bo Song , Kun Cai , Liang Bian , Zhu-Hua Yan , Qing-Hua Qin","doi":"10.1016/j.physe.2025.116324","DOIUrl":"10.1016/j.physe.2025.116324","url":null,"abstract":"<div><div>Graphyne/graphene nanoscroll (GY/G-NS) heterostructures, known for their enhanced synergistic performance, hold significant potential in catalysis and energy applications. To meet specific application needs, GY/G-NSs with tunable morphologies are highly desirable. In this study, we introduce three models, each consisting of a graphyne and a graphene nanoribbon placed near a carbon nanotube (CNT), with different initial relative positions for finding an appropriate way to fabricate GY/G-NSs. Molecular dynamics simulations reveal that when the CNT radius exceeds a critical value, it can effectively trigger the self-scrolling of the hybrid nanoribbons to form GY/G-NSs. Two types of configurations—interlaced and covered—are discovered using these models. These configurations can be switched by adjusting the nanoribbon lengths or the CNT radius. Furthermore, the relative positioning of the nanoscrolls within a covered GY/G-NS can be controlled by modulating the release mode of the ribbons on opposite sides of the CNT. This study provides insights into the tailored use of graphyne and graphene for custom heterojunctions in advanced applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116324"},"PeriodicalIF":2.9,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144518463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"RKKY interaction in triangular graphene nanobubble","authors":"Binyuan Zhang , Tiancheng Ma , Weijiang Gong","doi":"10.1016/j.physe.2025.116315","DOIUrl":"10.1016/j.physe.2025.116315","url":null,"abstract":"<div><div>Using the Lanczos method as a numerically exact theoretical framework, we investigate the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction in the triangular graphene nanobubble. Our results demonstrate that Saremi’s rule remains valid in the charge-neutral triangular graphene nanobubble. However, the characteristic <span><math><msup><mrow><mi>R</mi></mrow><mrow><mo>−</mo><mn>3</mn></mrow></msup></math></span> decay of the RKKY interaction observed in pristine graphene is disrupted when both magnetic impurities are located within the nanobubble. This decay behavior is restored when one impurity is positioned far from the nanobubble center, regardless of the other impurity’s location. By tuning the height of the nanobubble, the strength of the RKKY interaction can be enhanced by up to three orders of magnitude compared to that in pristine graphene. Moreover, we reveal that carrier doping, which shifts the Fermi level away from the Dirac point, can induce a transition from anti-ferromagnetic to ferromagnetic RKKY coupling between impurities on opposite sublattices, depending on the nanobubble height. These findings provide new insights into the manipulation of magnetic interactions in nanostructured graphene systems and pave the way for potential applications in graphene-based spintronic devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116315"},"PeriodicalIF":2.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144502776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia-Jian He, Qin Zhang, Yi-Fan Gao, Yu Zhang, Jia Liu, Dan Wu, Zhi-Qiang Fan, Xiao-Qing Deng
{"title":"Tunable magnetic and electronic properties in In2Se3/ScO2 van der Waals heterostructure induced by the vertical strain and electric field","authors":"Jia-Jian He, Qin Zhang, Yi-Fan Gao, Yu Zhang, Jia Liu, Dan Wu, Zhi-Qiang Fan, Xiao-Qing Deng","doi":"10.1016/j.physe.2025.116322","DOIUrl":"10.1016/j.physe.2025.116322","url":null,"abstract":"<div><div>In this work, we studied the electronic and magnetic properties of In<sub>2</sub>Se<sub>3</sub>/ScO<sub>2</sub> van der Waals (vdW) heterojunctions using the first-principles calculations. The Young's modulus (Y) and Poisson's ratio (υ) of heterojunctions are obvious anisotropy and show potential application in flexible nanoelectronic devices. Computational analysis shows that In<sub>2</sub>Se<sub>3</sub> as a nonmagnetic semiconductor, while ScO<sub>2</sub> manifests bipolar magnetic semiconducting behavior. Notably, In<sub>2</sub>Se<sub>3</sub> exhibits spin splitting and a small magnetic moment at the Se atoms near the interface. When the electric dipole is oriented from ScO<sub>2</sub> to In<sub>2</sub>Se<sub>3</sub>, the heterojunction becomes a dual-polarized magnetic semiconductor, with the conduction band minimum (CBM) and valence band maximum (VBM) originating from different spin states. A type-II band alignment emerges between the two monolayers, with staggered valence and conduction bands across the interface, enhancing carrier dissociation. Moreover, the electronic and magnetic characteristics of the heterostructure can be dynamically modulated by mechanical strain and electric fields (<em>E</em><sub>ext</sub>). A positive <em>E</em><sub>ext</sub> eliminates In<sub>2</sub>Se<sub>3</sub>'s magnetism, while a negative <em>E</em><sub>ext</sub> induces magnetism at the edge of this monolayer, especially in the Se<sub>3</sub> atomic layer due to electronegativity differences and the weak built-in electric field. The strain can regulate the magnetic properties of heterojunction obviously, the changed magnetic moment of monolayers increases quickly with the raising compressive strain, and decreases gradually with rising interlayer distance.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116322"},"PeriodicalIF":2.9,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144490278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancing carrier mobility in two-dimensional B2Se3 through strain engineering and van der Waals heterostructures","authors":"Menghao Bi, Cheng Zhang, Jie Wang, Zhengbo Zhao, Mengxue Liu, Fang Wu","doi":"10.1016/j.physe.2025.116318","DOIUrl":"10.1016/j.physe.2025.116318","url":null,"abstract":"<div><div>Two-dimensional (2D) materials show great promise for integrated circuits due to their unique electronic properties, but enhancing carrier mobility remains a key challenge for developing high-performance devices. This study explores the external modulation of carrier mobility in 2D B<sub>2</sub>Se<sub>3</sub> through mechanical strain and van der Waals (vdW) heterostructures. Applying 4 % strain along ε<sub>x</sub> increased hole mobility from 59.45 to 36,044.72 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, attributed to reduced hole-phonon coupling and flattened energy bands near the valence band maximum. Additionally, a B<sub>2</sub>Se<sub>3</sub>/CS vdW heterostructure achieved electron mobility of 2154.08 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, up from 1227.74 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> in pristine 2D B<sub>2</sub>Se<sub>3</sub>, due to an increased elastic modulus. These findings highlight the tunability of carrier mobility in 2D B<sub>2</sub>Se<sub>3</sub>, offering new opportunities for advanced electronic and optoelectronic devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116318"},"PeriodicalIF":2.9,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144364862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fano–Rashba effect in the presence of Majorana bound states","authors":"B. Grez , J.P. Ramos-Andrade , P.A. Orellana","doi":"10.1016/j.physe.2025.116306","DOIUrl":"10.1016/j.physe.2025.116306","url":null,"abstract":"<div><div>In this paper, we investigate the influence of Majorana bound states on the Fano–Rashba effect in a two-channel Fano–Anderson model. Employing Green’s function formalism and the equation of motion method, we compute the transmission through the quantum dot and the density of states. Our analysis reveals that the Majorana bound states, localized at the ends of the topological superconductor nanowire, penetrate into the quantum dot and interact with the bound states in the continuum, thereby altering the interference pattern in the electronic transmission profile. Furthermore, we explore the robustness of the bound state in the continuum concerning its connection to Majorana bound states and the energy induced by the perpendicular component of the magnetic field. We posit that our findings contribute to a deeper comprehension of the Fano–Rashba effect in a two-channel quantum dot coupled to a topological superconducting nanowire.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116306"},"PeriodicalIF":2.9,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144306396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The influence of contact interfaces on transport statistics in field-effect transistors based on highly-doped InAs nanowires","authors":"A.A. Zhukov","doi":"10.1016/j.physe.2025.116309","DOIUrl":"10.1016/j.physe.2025.116309","url":null,"abstract":"<div><div>The magnetotransport measurements including mapping with scanning gate microscopy technique were done on field-effect transistors based on highly doped InAs nanowires. Two different transport regimes at high and low current carrier concentration were observed. The crucial influence of the blocking barriers in contact interfaces on statistics of universal conductance fluctuations is revealed and investigated.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116309"},"PeriodicalIF":2.9,"publicationDate":"2025-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144335833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yiqiu Ru , Zi Wang , Tao Zhang , Keda Yang , Jiaye Su
{"title":"Lateral electric field promotes the water transport in double-walled carbon nanotubes","authors":"Yiqiu Ru , Zi Wang , Tao Zhang , Keda Yang , Jiaye Su","doi":"10.1016/j.physe.2025.116314","DOIUrl":"10.1016/j.physe.2025.116314","url":null,"abstract":"<div><div>A lateral electric field typically impedes the water transport in single-walled carbon nanotubes (SWCNTs), because it disrupts the hydrogen bond network among confined water molecules. In this work, through a series of molecular dynamics simulations, we observe an opposite phenomenon in double-walled carbon nanotubes (DWCNTs): the lateral electric field promotes the water transport. The underlying mechanism is that the hydrogen bond network can be partially breakdown by the lateral electric field, thereby melting the ice-like structures in DWCNTs, which facilitates water transport. Meanwhile, for the confined cylinder monolayer water, enhanced rotational motion under stronger field strengths can be more efficiently converted into translational motion. Specifically, as the field strength increases, the water flow increases almost linearly, corresponding to the decay in hydrogen bond number. With the increase in CNT length, the water flow exhibits a linear reduction and reaches completely zero at weak field strengths because of the formation of ice structures in long CNTs. Some other parameters, such as translocation time, occupancy number, and dipole and density distributions also show a specific dependence on the field strength and CNT length. These findings enrich our understanding of the unusual dynamics of water molecules in DWCNTs and shed light on a new idea for the design of novel nanofluidic devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"173 ","pages":"Article 116314"},"PeriodicalIF":2.9,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144279264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}