Physica E-low-dimensional Systems & Nanostructures最新文献

{"title":"Chemical-bond framework design for spontaneous hydrogen evolution in a ZnSO monolayer","authors":"Kaihua Zhu ,&nbsp;Jiakang Yang ,&nbsp;Yingyu Wang ,&nbsp;Rundong Wan ,&nbsp;Zhengfu Zhang ,&nbsp;Shuaikang Wang ,&nbsp;Mengnie Li ,&nbsp;Dandan Mao ,&nbsp;Guocai Tian","doi":"10.1016/j.physe.2026.116473","DOIUrl":"10.1016/j.physe.2026.116473","url":null,"abstract":"<div><div>Two-dimensional photocatalysts with balanced redox potentials, effective carrier transport, and sufficient visible-light absorption are desirable for hydrogen evolution but remain difficult to realize within a single material system. In this work, we propose a new ZnSO monolayer designed from a chemical-bond framework perspective. The structure is stabilized by an O–S–Zn–O covalent backbone, while a Zn–S delocalized network provides efficient electronic conduction pathways. First-principles calculations confirm the dynamical, thermal, and environmental stability of the monolayer through phonon spectra, AIMD simulations, and cohesive energy analysis. The material exhibits a moderate band gap of 2.69 eV, strong orbital hybridization near the band edges, and highly anisotropic carrier mobility, reaching up to 1.20 × 10⁵ cm² V⁻¹ s⁻¹ for electrons. Optical calculations indicate that the ZnSO monolayer absorbs light in the visible region, with the absorption onset around 419 nm and stronger absorption at shorter visible wavelengths, enabling effective use of solar energy. which contributes to a theoretical solar-to-hydrogen efficiency of 12.7 % under AM1.5G illumination. and the band-edge alignment satisfies the thermodynamic requirements for water splitting. Free-energy analyses further show that the hydrogen evolution reaction becomes energetically favorable under photoexcitation (ΔG_H = −0.05 eV). These results suggest that the ZnSO monolayer is a promising low-dimensional semiconductor for photocatalytic hydrogen production and demonstrate the potential of chemical-bond–guided electronic design strategies in 2D systems.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116473"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-dependent interface effects on magnetic and magnetocaloric properties of Ta-capped TbFeCo amorphous thin films","authors":"Jagadish Kumar Galivarapu,&nbsp;Zengli Guo,&nbsp;Shangqian Wang,&nbsp;Zhonghao Han,&nbsp;Ke Wang","doi":"10.1016/j.physe.2026.116465","DOIUrl":"10.1016/j.physe.2026.116465","url":null,"abstract":"<div><div>We investigate the thickness-dependent interfacial and magnetic properties of Ta/TbFeCo/Ta amorphous thin films with thicknesses ranging from 55 to 150 nm. A systematic increase in the compensation temperature (T_comp) is observed as the thickness increases across this range. Magneto-Optic Kerr Effect and anomalous Hall measurements confirm that all films are Tb-rich, consistent with ferrimagnetic behavior. DC magnetization studies reveal that the perpendicular magnetic anisotropy strengthens with increasing thickness up to ∼90 nm and subsequently saturates for films thicker than 100 nm. This evolution indicates that interfacial anisotropy dominates at lower thicknesses, whereas bulk contributions become predominant at higher thicknesses. The maximum magnetic entropy change, measured at T_comp, reaches 0.16 J kg⁻¹ K⁻¹ under an applied field of 1.5 T and increases with thickness. These results elucidate how interfacial coupling in Ta/TbFeCo/Ta heterostructures can be leveraged to tune compensation temperature, anisotropy, and magnetocaloric response in ferrimagnetic systems with antiferromagnetically coupled sublattices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116465"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum information and thermodynamic features in position-dependent mass semiconductor heterostructures","authors":"Quezia R.D.S. Moreira ,&nbsp;Lucas F. Ximenes ,&nbsp;Allan R.P. Moreira ,&nbsp;João B.R. Silva","doi":"10.1016/j.physe.2026.116478","DOIUrl":"10.1016/j.physe.2026.116478","url":null,"abstract":"<div><div>In this work, we investigate the spectral, information-theoretic, and thermodynamic properties of a quantum particle with position-dependent mass confined in an infinite potential well. By introducing a displacement parameter that modifies the effective mass distribution, we derive exact analytical solutions for both the free and confined cases. The resulting eigenfunctions exhibit logarithmic spatial dependence, while the quantized spectrum retains a modified dispersion relation controlled by the displacement strength. We further analyze quantum-information measures, including the Shannon entropy and Fisher information, revealing how mass displacement influences spatial localization and information flow in the system. The thermodynamic quantities derived from the energy spectrum, such as the partition function, free energy, entropy, and heat capacity, show nontrivial dependence on the displacement parameter, indicating significant modifications to the thermal behavior of position-dependent mass systems. These results provide a relevant theoretical framework for strained crystals, graded semiconductors, and heterostructures where the effective mass varies spatially.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116478"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelling of quantum transport in monolayer MoS2 Photo-MOSFET as high-performance nano-electronic devices","authors":"Prerona Singha,&nbsp;P.K. Kalita","doi":"10.1016/j.physe.2026.116476","DOIUrl":"10.1016/j.physe.2026.116476","url":null,"abstract":"<div><div>This work presents a fully theoretical quantum-transport study of a monolayer MoS₂ Photo-MOSFET under green laser illumination (532 nm) using the Non-Equilibrium Green's Function (NEGF) formalism. The model, implemented in Python, captures photoexcited carrier dynamics by incorporating light–matter interactions and recombination effects, enabling prediction of device behaviour without empirical fitting. Simulations reveal linear photocurrent–power dependence, photo gain and EQE reduction at high photon flux due to trap saturation, and dominant photogating with trap-assisted transport. Transient analysis shows sub-100 ms switching, while the spectral response peaks near 600 nm, matching the direct excitonic transition. The approach reproduces key experimental trends and provides deeper physical insight into quantum transport, trap modulation, and optical excitation in atomically thin channels. This framework offers a predictive tool for designing high-performance optoelectronic transistors, photodetectors, and light-controlled neuromorphic devices based on transition metal dichalcogenides.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116476"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146189464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum geometric scattering of a Dirac particle by a Berry curvature domain wall","authors":"Lassaad Mandhour ,&nbsp;Frédéric Piéchon","doi":"10.1016/j.physe.2026.116468","DOIUrl":"10.1016/j.physe.2026.116468","url":null,"abstract":"<div><div>We investigate the scattering of a three-dimensional massless Dirac particle through a domain wall separating two regions with identical energy spectra but distinct Berry curvature dipoles. We demonstrate that the quantum geometric mismatch induces partial reflection and transmission despite identical incident and refracted momenta. These results highlight the role of engineered quantum geometric interfaces as key tools to control Dirac particle scattering.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116468"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of electron–phonon coupling in charge transport of Janus WBNX2 (X= S, Se, Te) monolayers: A first-principles analysis","authors":"Tuan V. Vu ,&nbsp;Vo T.T. Vi ,&nbsp;A.I. Kartamyshev ,&nbsp;Huynh V. Phuc ,&nbsp;Nguyen T. Hiep ,&nbsp;Nguyen N. Hieu","doi":"10.1016/j.physe.2026.116466","DOIUrl":"10.1016/j.physe.2026.116466","url":null,"abstract":"<div><div>The exploration of multifunctional two-dimensional semiconductors with superior intrinsic properties is an ongoing hot topic for advancing next-generation electronic technologies. Herein, three Janus WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> (<span><math><mrow><mi>X</mi><mo>=</mo></mrow></math></span> S, Se, Te) monolayers are designed and their fundamental characteristics are systematically studied through the first-principles simulations. According to the obtained cohesive energies, phonon dispersions, <em>ab initio</em> molecular dynamics, and elastic calculations, the WBNS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and WBNTe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> structures are demonstrated to possess high crystal, dynamic, thermal and mechanical stabilities for experimental synthesis. The Raman spectra and vibrational properties of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> systems are investigated to provide insights into their lattice dynamics. Electronic structure calculations reveal that the proposed WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> monolayers are semiconductors with moderate bandgaps for applications in electronic and optoelectronic devices. Notably, the inclusion of spin–orbit coupling induces the spin energy splitting of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> systems. The WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> exhibits high Rashba parameters, suggesting potential applications in the spintronic devices. Importantly, the total electron and hole mobilities of the WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> materials are evaluated by considering different scattering mechanisms. Generally, the obtained carrier mobilities of the three WBNS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, WBNSe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> and WBNTe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> configurations are quite low and govern by of electron–phonon scatterings. The finding in our work highlight the promising prospects of the Janus WBN<span><math><msub><mrow><mi>X</mi></mrow><mrow><mn>2</mn></mrow></msub></math></span> materials for future nanotechnology applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116466"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring electrical contact properties of emerging BC2N/graphene heterobilayers though vertical electric field","authors":"Huabing Shu ,&nbsp;Yuqing Dong ,&nbsp;Haiying Xu","doi":"10.1016/j.physe.2026.116467","DOIUrl":"10.1016/j.physe.2026.116467","url":null,"abstract":"<div><div>Exploring semiconductor-semimetal electrical contact behaviors is highly desirable for developing high-performance nanoelectronic devices. Here, we construct ultrathin van der Waals heterostructures by integrating novel BC₂N and graphene monolayers. Their interfacial electronic characteristics, as well as the tunable Schottky barriers and contact types, are explored deeply through first-principles calculations. The constructed BC₂N/graphene heterobilayers are verified to be energetically favorable and dynamically stable. All of them feature <em>p</em>-type Schottky contacts, with Schottky barrier heights that vary significantly depending on the stacking configurations. The high carrier mobilities suggested by small effective masses of carriers in the BC₂N/graphene and small tunneling resistivities of ∼10⁻⁹ Ω cm² can cater high-performance Schottky devices. More interestingly, the vertical electric field can induce a contact transformation (from <em>p</em>-type to an <em>n</em>-type Schottky contact or Schottky to Ohmic contact) and significantly increase the probability of carrier tunneling in BC₂N/graphene heterobilayers. These findings offer valuable guidance for designing high-performance, controllable Schottky nanodevices based on BC₂N/graphene heterobilayers.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116467"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Perfect circular dichroism of Haldane model quantum dots","authors":"Krishna Rana Magar,&nbsp;Vadym Apalkov","doi":"10.1016/j.physe.2026.116477","DOIUrl":"10.1016/j.physe.2026.116477","url":null,"abstract":"<div><div>We study theoretically a nonlinear circular dichroism of Haldane model quantum dots (QDs) placed in the field of an ultrashort and strong circularly polarized optical pulse. The main parameter of the Haldane model is the phase <span><math><mi>ϕ</mi></math></span>, which breaks the time-reversal symmetry of a QD system, resulting in intrinsic chirality of the Haldane model QDs and a finite circular dichroism. The circular dichroism of a QD system strongly depends on the QD shape. The crucial condition is the existence of almost degenerate in-gap QD edge states for zero intrinsic phase, <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>. For hexagonal QDs and triangular QDs with armchair edges, at <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>, the QDs do not have any degenerate edge states. For such systems, at finite values of the phase <span><math><mi>ϕ</mi></math></span>, a perfect circular dichroism can be realized. The smallest phase, at which a perfect circular dichroism can be achieved, increases with the field amplitude. Also, at a given phase <span><math><mi>ϕ</mi></math></span>, a circular dichroism decreases with increasing the field strength. The origin of a large circular dichroism for such QD systems is the low-energy chiral edge states, which are formed at finite values of <span><math><mi>ϕ</mi></math></span> of the Haldane model. But, if, at <span><math><mrow><mi>ϕ</mi><mo>=</mo><msup><mrow><mn>0</mn></mrow><mrow><mn>0</mn></mrow></msup></mrow></math></span>, a Haldane model QD has almost degenerate edge states, which is the case of a triangular QD with zigzag edges, then, for any parameters of the Haldane model, a perfect circular dichroism cannot be realized. In this case, a circular dichroism as a function of the phase, parameters of the Haldane model, and the field amplitude shows strongly nonmonotic dependence.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"178 ","pages":"Article 116477"},"PeriodicalIF":2.9,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin-dependent transport in long semiconductor heterostructures with Rashba effect: A Green’s function approach","authors":"Luna R.N. Oliveira ,&nbsp;Cleber F.N. Marchiori ,&nbsp;Carlos Moyses Araujo ,&nbsp;Marcos G.E. da Luz","doi":"10.1016/j.physe.2025.116451","DOIUrl":"10.1016/j.physe.2025.116451","url":null,"abstract":"<div><div>The Rashba effect is a manifestation of spin–orbit coupling in systems with structural inversion asymmetry, resulting in a spin-dependent splitting of energy bands in low-dimensional systems. This gives rise to diverse spin-dependent phenomena in semiconductor heterostructures, offering significant potential for spintronic applications. However, a comprehensive theoretical characterization remains incomplete, since most existing approaches are restricted to relatively small structures. In this work, we combine the well-established eight-band Kane model and envelope-function formalism with a recently developed Green’s function approach. The framework allows to obtain analytical expressions for the spin-dependent coherent transport in semiconductor heterostructures with an arbitrary number <span><math><mi>N</mi></math></span> of cells exhibiting the Rashba effect. In addition, we propose guidelines for enhancing spin polarization and spin-miniband separation in extended semiconductor heterostructures by tuning structural inversion asymmetry. Furthermore, we find that as a geometric parameter is varied, the spin-splitting dynamics present the quantum avoided-crossing behavior. We finally show that, for suitably designed heterostructures, the polarization bands can exhibit step-like (rectangular-wave) profiles. Although our examples focus on GaAs/In-based systems, the results are expected to hold for other semiconductor materials as well.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116451"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of defect states, free volume, and interphase interactions in β-Ga2O3/CNT polymer nanocomposites","authors":"S.A. Ahmadova ,&nbsp;Samir F. Samadov ,&nbsp;G.B. Ibragimov ,&nbsp;I.I. Vinogradov ,&nbsp;A.A. Sidorin ,&nbsp;D.M. Mirzayeva ,&nbsp;B. Mauyey ,&nbsp;S. Sakhabayeva ,&nbsp;P. Th Le ,&nbsp;Matlab N. Mirzayev","doi":"10.1016/j.physe.2025.116450","DOIUrl":"10.1016/j.physe.2025.116450","url":null,"abstract":"<div><div>Breakthrough innovations continue in the field of developing and studying new-generation materials with superior optical and mechanical properties. In this research, we investigated the defect characteristics, as well as the modification of the local bonding environment and interphase interactions, in a nanocomposite material formed by incorporating β-Ga₂O₃ and carbon nanotubes (CNTs) into a polyvinylidene fluoride (PVDF) matrix using positron annihilation lifetime spectroscopy (PALS) and Raman spectroscopy. Raman studies show that the D and G bands, which are indicators of the structural quality of carbon nanotubes, exhibit weak additional vibrational modes that can be associated with distortions of the β-Ga₂O₃ lattice and modifications of the local Ga–O coordination environment, rather than with the ideal crystalline structure. The observed peak shifts and intensity changes indicate a transition of the interphase interaction into an amorphous state, accompanied by the formation of internal structural stress and defect centers. With increasing β-Ga₂O₃ concentration in the composite material, the decrease in the ID/IG ratio reveals the formation of chemical bonds that strengthen the oxide layer on the surface of the carbon nanotubes. PALS analysis results clearly demonstrated that the type and size of defects strongly depend on the ratio of Ga₂O₃ to carbon nanotubes in the composite. In pure β-Ga₂O₃ structures, medium-sized vacancy clusters (τ₂ = 369 ps) are present, while in carbon nanotubes (τ₂ = 685 ps), and in the composite samples based on them, the τ₂ component increases up to 853 ps. Analysis based on the two-state trapping model showed that the changes in the τb, kd, and τ₂ – τb parameters indicate the occurrence of porosity and defect clustering processes in the composite structure depending on the CNT and β-Ga₂O₃ ratios. The obtained results suggest that new polymer-based composite materials with highly porous structures can serve as fundamental elements in sensor technology, optoelectronic devices, and radiation-resistant equipment.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116450"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}