{"title":"Majorana edge and end states in planar Josephson junctions","authors":"A.P. Garrido , P.A. Orellana , A. Matos-Abiague","doi":"10.1016/j.physe.2025.116444","DOIUrl":"10.1016/j.physe.2025.116444","url":null,"abstract":"<div><div>We theoretically investigate the localization properties of Majorana states (MSs) in proximitized, planar Josephson Junctions (JJs) oriented along different crystallographic orientations and in the presence of an in-plane magnetic field and Rashba and Dresselhaus spin–orbit couplings. We show that two types of MSs may emerge when the junction transits into the topological superconducting state. In one case, referred to as end-like MSs, the Majorana quasiparticles are mainly localized inside the normal region at the opposite ends of the junction. In contrast, edge-like MSs extend along the opposite edges of the system, perpendicular to the junction channel. We show how the MSs can transit from end-like to edge-like and vice versa by tuning the magnetic field strength and/or the superconducting phase difference across the junction. In the case of phase-unbiased JJs the transition may occur as the ground state phase difference self-adjusts its value when the Zeeman field is varied. We propose exploiting the extended nature of edge-like MSs as effective interconnects enabling the coupling between topological states in adjacent planar JJs. The impact of electrostatic disorder on the MSs is also analyzed.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116444"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optoelectronic applications of hexadecafluoro zinc phthalocyanine (ZnPcF16) thin films: structural, morphological, and optical characteristics","authors":"A.M. Hassanien","doi":"10.1016/j.physe.2025.116446","DOIUrl":"10.1016/j.physe.2025.116446","url":null,"abstract":"<div><div>The structural, morphological, and optical spectroscopic properties of hexadecafluoro zinc phthalocyanine <strong>(ZnPcF16)</strong> are promising investigations that can be useful in optoelectronic applications. The nature of the crystallographic structure and morphology characteristics were explored by field emission scanning electron microscopy (FESEM), and X-ray diffraction (XRD) investigations. To determine some crucial optical properties of the <strong>ZnPcF16</strong> dye in solution, such as absorption peaks position, photoluminescence emission peaks position, oscillator strengths (<span><math><mrow><mi>f</mi></mrow></math></span>) and electric dipole strength (<span><math><mrow><msup><mi>q</mi><mn>2</mn></msup></mrow></math></span>), spectrum behavior of the absorbance, fluorescent properties, and molar absorption coefficient spectra of <strong>ZnPcF16</strong> in Dimethyl Sulfoxide (DMSO) were examined. Absorbance spectra, transmittance, reflectance, and photoluminescence (PL) of <strong>ZnPcF16</strong> thin films before and after annealing at 373 K & 473 K in an air ambient for 2 h were used to deduce the optical band transitions, emission peaks position, and dispersion behaviour. This study demonstrates that the <strong>ZnPcF16</strong> organic compound is characterized by good thermal stability, appropriate optical band gap, and dielectric properties, which offer potential uses as an active photonic organic material and should be properly addressed in the device design of optoelectronic technological devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116446"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145787221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Doan M. Quang , Nguyen Q. Bau , Le T.T. Phuong , Bui D. Hoi
{"title":"Tunable thermopower in gapped 8-Pmmn borophene","authors":"Doan M. Quang , Nguyen Q. Bau , Le T.T. Phuong , Bui D. Hoi","doi":"10.1016/j.physe.2025.116438","DOIUrl":"10.1016/j.physe.2025.116438","url":null,"abstract":"<div><div>We investigate the thermoelectric transport properties of gapped tilted-8-<span><math><mrow><mi>P</mi><mi>m</mi><mi>m</mi><mi>n</mi></mrow></math></span> borophene, a two-dimensional boron allotrope with anisotropic electronic dispersion, using the semiclassical Boltzmann transport theory within the constant relaxation time approximation. The low-energy effective Hamiltonian incorporates a tilted Dirac cone structure with an induced bandgap, tunable via strain or substrate interactions. We calculate the electrical conductivity, Seebeck coefficient, and thermopower as functions of chemical potential, energy gap, and thermal energy. Our results reveal pronounced transport anisotropy in the <span><math><mi>x</mi></math></span>- and <span><math><mi>y</mi></math></span>-directions, with the <span><math><mi>x</mi></math></span>-direction exhibiting higher conductivity and thermopower. Increasing the bandgap enhances the Seebeck coefficient and thermopower by aligning the Fermi level with the band edges, while higher temperatures boost conductivity at the expense of the Seebeck coefficient. These findings highlight the potential of gapped 8-<span><math><mrow><mi>P</mi><mi>m</mi><mi>m</mi><mi>n</mi></mrow></math></span> borophene for nanoscale thermoelectric applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116438"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spyridon G. Kosionis, Alexandros Sarafidis, Emmanuel Paspalakis
{"title":"Optical response of a semiconductor quantum dot ‒ metal nano-ellipsoid hybrid system","authors":"Spyridon G. Kosionis, Alexandros Sarafidis, Emmanuel Paspalakis","doi":"10.1016/j.physe.2025.116437","DOIUrl":"10.1016/j.physe.2025.116437","url":null,"abstract":"<div><div>We study the optical response of a semiconductor quantum dot coupled via Coulomb interaction to an ellipsoidal metal nanoparticle under weak coherent excitation. Using the density matrix formalism, we derive analytical expressions for the linear susceptibilities of both components of the hybrid nanostructure. We analyze how the dispersion and absorption spectra depend on the orientation and eccentricity of the metal nano-ellipsoid, the polarization of the incident field, and the interparticle distance. Our results highlight the precise conditions for pronounced gain enhancement without population inversion. Comparison with a quantum dot coupled to a metal nanosphere demonstrates that the observed gain enhancement originates from coherent exciton-plasmon interactions, a mechanism with direct implications for next-generation quantum devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116437"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Peng-Fei Liu , Xiao-Hong Li , Rui-Zhou Zhang , Hong-Ling Cui
{"title":"Structural and electronic properties, quantum capacitance of Pt-adsorbed Zr2CT2 (T = O, S, Se, F, Cl, Br, I) as supercapacitor electrode materials: First-principle predictions","authors":"Peng-Fei Liu , Xiao-Hong Li , Rui-Zhou Zhang , Hong-Ling Cui","doi":"10.1016/j.physe.2025.116452","DOIUrl":"10.1016/j.physe.2025.116452","url":null,"abstract":"<div><div>The electronic properties and quantum capacitance of Pt-adsorbed Zr<sub>2</sub>CT<sub>2</sub> (T = O, S, Se, F, Cl, Br, I) are explored by density functional theory (DFT). The most stable adsorption configurations are confirmed for all systems. Compared to pristine Zr<sub>2</sub>CO<sub>2</sub>, Pt adsorption causes the increase of band gap. Pt-Zr<sub>2</sub>CO<sub>2</sub> exhibits an indirect bandgap semiconductor of 1.36 eV, while other systems show metallic behavior. Pt donates electrons to substrate material for Pt-Zr<sub>2</sub>CO<sub>2</sub> and gains electrons from the substrate for other systems, especially Pt atom in Pt-Zr<sub>2</sub>CF<sub>2</sub> gains the most electrons (0.61e). Pt-Zr<sub>2</sub>CT<sub>2</sub> with group VII elements are anode materials in whole voltage, with the maximum surface storage charge (Q) at negative bias ranging from 69.58 to 93.05 μC/cm<sup>2</sup> at aqueous system. Pt-Zr<sub>2</sub>CT<sub>2</sub> (T = O, S, Se) are cathode materials in ionic/organic system. Pt-Zr<sub>2</sub>CT<sub>2</sub> with mixed terminations are all anode materials in whole voltage.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116452"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optically tunable quaternary 2D heterostructures for fast, simulation-driven nanoelectronic reconfiguration","authors":"Arash Vaghef-Koodehi","doi":"10.1016/j.physe.2025.116457","DOIUrl":"10.1016/j.physe.2025.116457","url":null,"abstract":"<div><div>We present a comprehensive simulation-based study of a quaternary van der Waals heterostructure—Graphene/WSe<sub>2</sub>/MoTe<sub>2</sub>/In<sub>2</sub>Se<sub>3</sub>—engineered for fully optical, voltage-free reconfiguration of nanoelectronic logic. Optical power densities between 1 μW/cm<sup>2</sup> and 100 μW/cm<sup>2</sup> were applied consistently across all simulations, inducing reversible threshold-voltage shifts up to 3.5 V over a broadband spectral range (400–1300 nm). Coupled Schrödinger–Poisson and drift–diffusion calculations reveal carrier dynamics governed by photodoping and ferroelectric charge trapping, yielding responsivity ≈2.5 A/W (at 650 nm) and sub-100 ns switching times. Layer-thickness optimization (WSe<sub>2</sub>: 1.2 nm, MoTe<sub>2</sub>: 0.9 nm) ensures balanced optical absorption and carrier transit, minimizing total power consumption near 15 μW/cm<sup>2</sup> illumination. Thermal reliability tests within 250–400 K show negligible drift in V<sub>TH</sub> (0.8 mV/K) and responsivity (0.2 %/K). These findings establish design principles for high-speed, optically driven logic architectures, offering promising pathways toward simulation-based reconfigurable 2D nanoelectronics and neuromorphic photogating devices.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116457"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145884275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Structure-driven electronic property modulation in MoS2: Insights from first-principles calculations","authors":"Yande Wang, Fujun Liu","doi":"10.1016/j.physe.2025.116422","DOIUrl":"10.1016/j.physe.2025.116422","url":null,"abstract":"<div><div>Molybdenum disulfide (MoS<sub>2</sub>) exhibits electronic properties that are sensitive to morphological variations, making it a compelling candidate for tunable nanoelectronic applications. In this study, we employ first-principles calculations to systematically investigate how changes in MoS<sub>2</sub> structure influence its atomic and electronic structure, including crystal configuration, band structure, and density of states. Our results demonstrate that morphological modifications induce significant alterations in electronic properties, offering a deeper understanding of structure-property relationships in MoS<sub>2</sub>. These theoretical insights not only elucidate the mechanisms behind structure-dependent electronic behavior but also provide a foundation for the rational design of optimized MoS<sub>2</sub>-based devices. By establishing structure as a critical tuning parameter, this work opens new pathways for advancing MoS<sub>2</sub> applications in next-generation nanoelectronics.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116422"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145600506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Klein tunneling in deformed honeycomb–dice lattice: From massless to massive particles","authors":"L. Mandhour, F. Bouhadida","doi":"10.1016/j.physe.2025.116424","DOIUrl":"10.1016/j.physe.2025.116424","url":null,"abstract":"<div><div>We show that under compressive uniaxial deformation of the three-band <span><math><mrow><mi>α</mi><mo>−</mo><msub><mrow><mi>T</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span> lattice, the Dirac cones move toward each other, merge, and a gap opens, while the flat band remains unchanged. Consequently, the low-energy spectrum transitions from linear to quadratic dispersion, indicating the shift from massless to massive Dirac particles. Here, we theoretically investigate the tunneling properties of particles through a sharp <span><math><mi>np</mi></math></span> junction in a deformed <span><math><mrow><mi>α</mi><mo>−</mo><msub><mrow><mi>T</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span> lattice, focusing on the case where the particle energy is half the junction height. We show that this transition from massless to massive particles leads to a change from omnidirectional total transmission, known as super-Klein tunneling, to omnidirectional total reflection, referred to as anti-super-Klein tunneling, in the case of the dice lattice (<span><math><mrow><mi>α</mi><mo>=</mo><mn>1</mn></mrow></math></span>). For all values of <span><math><mi>α</mi></math></span>, this transition manifests as a change from conventional Klein tunneling to anti-Klein tunneling.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116424"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145617268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bill D. Aparicio Huacarpuma , Muhammad Irfan , Carlos A. Vilca Huayhua , Fábio L. Lopes de Mendonça , Carlos M.O. Bastos , Alexandre C. Dias , Luiz A. Ribeiro Junior
{"title":"Electronic structure and light-harvesting efficiency of Janus XSO (X = Sn, Ge) monolayers","authors":"Bill D. Aparicio Huacarpuma , Muhammad Irfan , Carlos A. Vilca Huayhua , Fábio L. Lopes de Mendonça , Carlos M.O. Bastos , Alexandre C. Dias , Luiz A. Ribeiro Junior","doi":"10.1016/j.physe.2025.116453","DOIUrl":"10.1016/j.physe.2025.116453","url":null,"abstract":"<div><div>The urgent global demand for clean and efficient energy has intensified the search for novel low-dimensional materials with photovoltaic potential. Two-dimensional (2D) materials, particularly Janus materials, are emerging as promising candidates for solar cell applications owing to their electronic properties. However, the literature lacks studies that analyze the impact of excitons on their optical properties and power conversion efficiency (PCE) for such devices. In this work, we perform a comprehensive first-principles investigation of the structural, thermodynamic, electronic, and optical properties of 2D Janus XSO (<span><math><mrow><mi>X</mi><mo>=</mo></mrow></math></span> Sn, Ge) monolayers, analyzing the impact of excitonic effects on photovoltaic devices. Both systems are identified as direct-gap semiconductors, with band gaps of 0.86<!--> <!-->eV and 0.59<!--> <!-->eV at the PBE level, increasing to 1.74<!--> <!-->eV and 1.52<!--> <!-->eV within the HSE06 functional, respectively. Their optical response, evaluated through a Wannier basis tight-binding Hamiltonian combined with the Bethe–Salpeter equation, reveals pronounced excitonic effects, with binding energies of 315<!--> <!-->meV for SnSO and 256<!--> <!-->meV for GeSO. The photovoltaic performance, assessed via the Shockley–Queisser limit, yields theoretical power conversion efficiencies of up to 32.46<!--> <!-->%. These results demonstrate that 2D Janus SnSO and GeSO monolayers are promising candidates for next-generation solar energy technologies, combining suitable band gaps with intense light–matter interactions.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116453"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145840165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Co-doped ZnO thin films: Experimental and DFT insights into structural, optical and magnetic properties","authors":"Zafer Gültekin","doi":"10.1016/j.physe.2025.116434","DOIUrl":"10.1016/j.physe.2025.116434","url":null,"abstract":"<div><div>In this work, we systematically investigate the structural, optical, and magnetic properties of undoped and Co-doped ZnO thin films prepared by the sol–gel method, supported by DFT (Quantum ESPRESSO) calculations. XRD analysis confirms the retention of the hexagonal wurtzite phase, while Co incorporation leads to c-axis expansion, reduced crystallite size, and increased microstrain and a moderate expansion along the c-axis associated with strain- and defect-mediated lattice perturbations. UV–Vis spectra reveal a band-gap narrowing and redshift, consistent with Co 3 d-derived intermediate states near the band edges. Photoelectrochemical measurements (Mott–Schottky and time-resolved photocurrent) show an increase in carrier density and enhanced photocurrent under UV illumination. VSM measurements demonstrate room-temperature ferromagnetism, and DFT reveals spin-asymmetric density of states and Co-centered magnetic moments, which provide a microscopic rationale for these experimental findings.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"177 ","pages":"Article 116434"},"PeriodicalIF":2.9,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145682470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}