Physica E-low-dimensional Systems & Nanostructures最新文献

{"title":"Characterization of lattice parameter variations, defect dynamics, and surface morphology in Al2O3-B4C coatings on 321 stainless steel under swift heavy ion irradiation","authors":"","doi":"10.1016/j.physe.2024.116103","DOIUrl":"10.1016/j.physe.2024.116103","url":null,"abstract":"<div><p>In the presented work, 321 Stainless Steel + B₄C + Al₂O₃ compounds were synthesized by atmospheric plasma technique, with 167 MeV energy swift heavy Xe²⁶⁺ ions were irradiated with different flux and structure, defect formation and Raman spectroscopic analyzes were performed. The total number of displacements was determined based on the DPA and NRT model of interacting ions with SRIM/TRIM calculations. Depending on the concentration of B₄C crystal, phase space groups, lattice parameters, surface morphology and their changes were determined in non-irradiated and SHI-irradiated compounds by structural analysis. Raman shift analyzes were performed depending on the change of Al₂O₃ concentration on the surface of the compound after SHI irradiation. It has been established that SHI radiation causes the formation of defect centers on the surface and volume of the 321 Stainless Steel + B₄C + Al₂O₃ compound, amorphization of the surface, and reduction of the lattice parameters in the existing structural phases.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Memristive behaviour of Al/rGO-CdS/FTO device at different temperatures: A MATLAB-integrated study","authors":"","doi":"10.1016/j.physe.2024.116107","DOIUrl":"10.1016/j.physe.2024.116107","url":null,"abstract":"<div><p>In the present work, a comprehensive study is carried out to investigate the memristive behaviour of reduced graphene oxide (rGO) conjugated cadmium sulphide quantum dot (CdS QD) nanocomposites (rGO-CdS), offering insights into their dynamic response under varying thermal conditions. The study integrates experimental analysis with MATLAB simulation to provide a detailed understanding of the complex interplay between different operating temperature (300K, 350K, 400K, and 450K) and memristive behavior in rGO-CdS nanocomposites. Different structural and chemical characterizations were carried out which confirms the formation of rGO-CdS nanocomposites. A sandwich structured device was fabricated with the synthesized rGO-CdS nanocomposites using Aluminum (Al) as top and Fluorine doped tin oxide (FTO) as bottom electrode. The influence of operating temperature on hysteresis behaviour of the fabricated Al/rGO-CdS/FTO device was investigated using Keithley 2450 source meter by sweeping a direct current (dc) voltage (−5 V → 5 V → −5 V). Notably, we observe a positive temperature coefficient in the device current, with maximum and minimum recorded current of <span><math><mrow><mo>|</mo><mrow><mn>1.29</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> and <span><math><mrow><mo>|</mo><mrow><mn>0.66</mn><mspace></mspace><mi>m</mi><mi>A</mi></mrow><mo>|</mo></mrow></math></span> at 450K and 300K respectively. The current-voltage (I-V) behavior observed in the device reveals that in the low resistance state (LRS), conduction is dominated by bulk-limited mechanisms. However, in the high resistance state (HRS), conduction involves contributions from both Schottky barriers and the Pool-Frenkel effect. A MATLAB based linear drift model was used to simulate the device responses at different temperatures using the experimental data. The study provides first comprehensive analysis of temperature dependent hysteresis behaviour of Al/rGO-CdS/FTO device, integrating MATLAB simulation to glean valuable insights into its operation and possible applications as memristive material across different temperature regimes.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142232077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"BAs/BlueP van der Waals heterostructures for photovoltaic and thermoelectric applications","authors":"","doi":"10.1016/j.physe.2024.116101","DOIUrl":"10.1016/j.physe.2024.116101","url":null,"abstract":"<div><p>The advancement of novel energy materials, encompassing photovoltaic and thermoelectric materials, assumes paramount significance in ameliorating the energy crisis and proactively combating climate change. The BAs/BlueP van der Waals heterostructure (vdWH), characterized by its outstanding optical absorption properties, high power conversion efficiency (PCE), and excellent thermoelectric performance, offers novel insights into the advancement of materials for photonic and thermoelectric applications. We have engineered a vdWH by combining BAs and BlueP, and conducted a comprehensive investigation of its electronic, optical, and thermoelectric properties. The BAs/BlueP vdWH demonstrates excellent thermodynamic and kinetic stability with type I band alignment, facilitating rapid interlayer electron-hole recombination. The remarkable optical absorption capability within the visible and ultraviolet (UV) spectral regions, coupled with an outstanding power conversion efficiency reaching up to 22.35 % under strain, firmly establishes the potential for utilization in photovoltaic conversion applications. At 1000 K, the significant ZT value (1.25) and high thermoelectric conversion efficiency (19.45 %) provide the theoretical foundation for its application in the field of thermoelectrics.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wet-chemical synthesized TiN-CuO nanocomposite: Advancing supercapacitor technology with high energy and power density","authors":"","doi":"10.1016/j.physe.2024.116105","DOIUrl":"10.1016/j.physe.2024.116105","url":null,"abstract":"<div><p>Modern-era energy crises have arisen as a result of industry's quick expansion. There must be a proliferation of autonomous, renewable-energy-powered, high-capacity storage systems. The high specific capacitance (C_s) is a result of the Electric Double Layered Capacitors (EDLC's) stellar cathode characteristics. The remarkable conductivity and storage capacity of transition metal nitride-based oxides (TMOs) have made them an attractive option for use as cathode materials in SC devices. The present study successfully synthesized the TiN-CuO composite for electrode material by employing the straightforward wet-chemical method. But the fact that the TiN-CuO combination is crystalline suggests it could be used as an electrode in SCs. The electrochemical performance of the TiN-CuO electrode was also highlighted by its excellent C_s of 843.5 F g⁻¹. Furthermore, the TiN-CuO‖MnO₂-KOH electrode displays a power density (P_d) of 17595 W/kg and an energy density (E_d) of 44.88 Wh kg⁻¹. In addition, the TiN-CuO‖MnO₂-KOH electrode has shown remarkable cyclic stability of 97.3 % up to 10,000 cycles, at 10 A g⁻¹. The electrochemical characteristics of fabricated TiN-CuO electrode material are superior to those of pure materials, rendering it an attractive candidate for use in energy storage devices such as SCs.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Observation of voltage dependent negative differential resistance (NDR) in SnS2-GO nanocomposites","authors":"","doi":"10.1016/j.physe.2024.116102","DOIUrl":"10.1016/j.physe.2024.116102","url":null,"abstract":"<div><p>This study investigates the structural, optical, and electrical properties of tin disulfide (SnS₂) and SnS₂-graphene oxide (GO) nanosheets synthesized via chemical bath deposition method (CBD). Structural characterization confirms the formation of hexagonal crystal phases with nanosheet morphology. It shows a well distribution of nanosheet average square sizes of 10 nm for SnS₂ and 6 nm for SnS₂-GO. Optical analysis shows blue shifts in absorption edges compared to bulk SnS₂, attributed to quantum confinement effects. Photoluminescence emission peaks exhibit different energy levels in SnS₂-GO originated to native defects. The composites show a sharp reduced of PL intensity due to enhanced charge carrier separation. Electrical measurements on SnS₂-GO thin films demonstrate negative differential resistance (NDR) behavior in both planar and sandwich contact configurations, suggesting electron injection/extraction mechanisms. The NDR phenomenon exhibits a dependence on voltage scan rate, indicating the involvement of electronic and ionic elements in charge transport mechanisms. Overall, this study provides insights into the NDR properties of SnS₂-GO nanocomposite, laying the groundwork for their potential applications in optoelectronics and nanoelectronics.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reconfigurable spin-wave properties in two-dimensional magnonic crystals formed of diamond and triangular shaped nanomagnets","authors":"","doi":"10.1016/j.physe.2024.116104","DOIUrl":"10.1016/j.physe.2024.116104","url":null,"abstract":"<div><p>Two-dimensional ferromagnetic nanodot structures exhibit intriguing magnetization dynamics and hold promise for future magnonic devices. In this study, we present a comparative experimental investigation into the reconfigurable magnetization dynamics of non-ellipsoidal diamond and triangular-shaped nanodot structures, employing broadband ferromagnetic resonance spectroscopy. Our findings reveal substantial variations in the spin wave (SW) spectra of these structures under different bias field strengths (<em>H</em>) and angles (<em>φ</em>). Notably, the diamond nanodot structure exhibits a variation from nearly symmetric W-shaped dispersion to a skewed dispersion and subsequent transition to a discontinuous dispersion with subtle variation in bias field angle. On the other hand, in the triangular nanodot array a SW mode anti-crossing appears at <em>φ</em> = 15° which is starkly modified with the increase in <em>φ</em> to 30°. By analyzing the static magnetic configurations, we unveil the nature of the SW spectra in these two shapes. We reinforce our observations with simulated spatial power and phase maps. This study underscores the critical impact of dot shape and inversion symmetry on SW dynamical response, highlighting the significance of selecting appropriate structures and bias field strength and orientation for required functionalities. The remarkable tunability demonstrated by the magnonic crystals underscores their potential suitability for future magnonic devices.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142265511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling the impact of four-phonon scattering on thermal transport properties of the bulk β-Ga2O3 and monolayer Ga2O3","authors":"","doi":"10.1016/j.physe.2024.116099","DOIUrl":"10.1016/j.physe.2024.116099","url":null,"abstract":"<div><p>In recent years, the role of four-phonon (4ph) scattering in thermal transport properties has been gradually revealed. However, the underlying scattering mechanisms of the bulk <em>β</em>-Ga₂O₃ and monolayer Ga₂O₃ remain unclear. Hence, we evaluate the effect of 4ph scattering on the thermal transport properties of the bulk <em>β</em>-Ga₂O₃ and monolayer Ga₂O₃ by utilizing first-principles calculations. It has been observed that the Young's modulus and lattice thermal conductivity (<em>κ</em>) of the bulk <em>β</em>-Ga₂O₃ are anisotropic, while the values of the monolayer Ga₂O₃ are isotropic. The <em>κ</em> of the bulk <em>β</em>-Ga₂O₃ along the three directions ([100], [010], and [001]) and monolayer Ga₂O₃ after adding 4ph scattering are decreased by 9.23%, 11.52%, 13.89%, and 29.24% at 300 K, respectively. Moreover, the effect of four-phonon scattering is more pronounced at the high temperature. Afterwards, based on the phonon behaviors, we can prove that the addition of 4ph scattering can increase the phonon scattering rate, decrease the phonon mean free path, and increase the phase space, which results in lower thermal conductivity. The findings can contribute to a better understanding of high-order phonon scattering mechanisms of the Ga₂O₃ materials.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-plane anisotropic dispersion property and second-harmonic generation of violet phosphorus with two-dimensional nano-interlocking structure","authors":"","doi":"10.1016/j.physe.2024.116100","DOIUrl":"10.1016/j.physe.2024.116100","url":null,"abstract":"<div><p>The unique one-dimensional chain structure of violet phosphorus provides an ideal platform for the study of second-order nonlinear optical properties. This also offers more possibilities for the further development of novel two-dimensional layered nanomaterials in the frequency domain. The research suggest that the highest occupied molecular orbital of monolayer phosphorene is characterized by a small effective mass and high hole mobility, while the lowest unoccupied molecular orbital exhibits opposite properties. This may be attributed to increased lattice scattering or electron-electron interactions in the conduction band. Monolayer violet phosphorus exhibits strong absorption capabilities in the near-ultraviolet light range, which can be utilized in UV spectroscopy technology for detecting harmful substances in water and air. Besides, its second harmonic generation response is also very strong within the visible light spectrum, and this response significantly varies with changes in angle. This provides theoretical guidance for optimizing the different stacking directions and heterojunction structures of violet phosphorus, more importantly, the sensitivity and directional selectivity of sensors can be improved. The work not only deepens the understanding of the electro-optical performance of violet phosphorus materials but also lays a theoretical foundation and guidance for the design and application of devices based on violet phosphorus.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Local electronic interaction effects on electronic properties of tetragonal Germanene under bias voltage","authors":"","doi":"10.1016/j.physe.2024.116098","DOIUrl":"10.1016/j.physe.2024.116098","url":null,"abstract":"<div><p>We study the effects of a transverse magnetic field and bias voltage on the electronic properties of buckled tetragonal Germanene in the context of Hubbard model with ferromagnetic ordering. In particular, the behavior of density of states and temperature dependence of specific heat, thermoelectric properties and magnetic susceptibility have been investigated. Mean field approximation has been employed in order to obtain the effects of local coulomb interaction on the band structure of the system. Our results show the band gap in the density of states decreases with increase of bias voltage. Also the low temperature dependence of specific heat of tetragonal Germanene is found to be exponentially increasing behavior with temperature for all magnetic field and local coulomb interaction strength values. Seebeck coefficient shows an increasing behavior in terms of temperature with positive sign for all values of interaction strength. However Seebeck coefficient gets both positive and negative signs due to variation of transverse magnetic field strength in the absence of coulomb interaction and bias voltage.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142149068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transport fingerprints of helical edge states in Sierpiński tapestries","authors":"","doi":"10.1016/j.physe.2024.116097","DOIUrl":"10.1016/j.physe.2024.116097","url":null,"abstract":"<div><p>Recently, synthesis and experimental research of fractalized materials has evolved in a paradigmatic crossroad with topological states of matter. Here, we present a theoretical investigation of the helical edge transport in Sierpiński carpets (SCs), combining the Bernevig–Hughes–Zhang model with the Landauer transport framework. By starting from a pristine two-dimensional topological insulator, the results reveal vanishing and reentrant resonant transport modes enabled for increased SC fractal generation. We observe that fractal with superior hierarchy inherits characteristics due to self-similarity and present conductance patterns resembling a miniband transport picture with fractal fingerprints. Real-space mapping of emerging resonant and antiresonant states provides an unprecedented view of helical-edge currents encoded in these intricate geometries and their multiple edges, underscoring the significance and consistency of our findings.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142173481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}