Physica E-low-dimensional Systems & Nanostructures最新文献

{"title":"Prediction of thermoelectric properties for monolayer BiSbTeSe2","authors":"Bin Xu ,&nbsp;Wenxu Zhao ,&nbsp;Linxin Zuo ,&nbsp;Cheng Qian ,&nbsp;Shanshan Ma ,&nbsp;Yusheng Wang ,&nbsp;Xiujiang Dong ,&nbsp;Lin Yi","doi":"10.1016/j.physe.2024.116167","DOIUrl":"10.1016/j.physe.2024.116167","url":null,"abstract":"<div><div>The full-potential linearized augmented plane wave method and the semi-classical Boltzmann theory are used to calculate the thermoelectric properties of monolayer BiSbTeSe₂. For the monolayer BiSbTeSe₂, the Tran-Blaha-modified Becke-Johnson (TB-mBJ) method calculates a larger band gap than that calculated by the generalized gradient approximation (GGA) method. Where the bandgap calculated by TB-mBJ is 0.94, while the bandgap calculated by GGA is 0.85. The absence of imaginary frequencies in the monolayer BiSbTeSe₂ phonon band structure ensures its dynamic stability. The contribution of the optical branch to the lattice thermal conductivity is low due to the strong scattering of the optical branch. So the contribution to the lattice thermal conductivity mainly comes from the acoustic branch. The maximum frequency of the acoustic branch is 1.8. The monolayer BiSbTeSe₂ has a low lattice thermal conductivity due to the low frequency of the acoustic branch. AIMD simulations confirm its thermal stability. Finally, the ZT value of monolayer BiSbTeSe₂ is calculated using TB-mBJ to peak at about 0.98 at a carrier concentration of 2 × 10²⁰ cm⁻³ and a temperature of 1125 K. The ZT value of monolayer BiSbTeSe₂ is calculated using TB-mBJ.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116167"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stacking pattern effects on the charge carrier dynamics of the MoS2/BSe heterostructure","authors":"Mengyan Zhang,&nbsp;Shuhong Ma,&nbsp;Zhaoyong Jiao","doi":"10.1016/j.physe.2024.116166","DOIUrl":"10.1016/j.physe.2024.116166","url":null,"abstract":"<div><div>The efficiency of electron-hole (e-h) pair separation at the interface of van der Waals (vdW) heterostructures is crucial in determining the solar energy conversion efficiency. In this work, based on the nonadiabatic molecular dynamics (NAMD) simulations, we have studied the photoinduced carrier dynamics of MoS₂/BSe, and the effect of stacking configuration is further analyzed. The results demonstrate that the MoS₂/BSe heterostructure is consistent with a type-II photogenerated carrier transfer mechanism, with ultrafast interlayer electron and hole transfer time scales of ∼50 fs and ∼200 fs, respectively, displaying a weak stacking dependence. Additionally, switching from AA to AB stacking delays the carrier lifetime of the heterostructure by about a factor of two, from 52.14 ns to 98.39 ns, which can be rationalized by the smaller wave function overlap and fast decoherence time of AB stacking. The present offering insights on the development of high-performance solar energy photovoltaic conversion devices on vdW heterostructures.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116166"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Stone–Wales defect on the electronic and thermoelectric properties of armchair edge germanene nanoribbons","authors":"Reza Kalami","doi":"10.1016/j.physe.2024.116169","DOIUrl":"10.1016/j.physe.2024.116169","url":null,"abstract":"<div><div>The electronic and thermoelectric properties of germanene armchair-edge nanoribbons (GeNRs) with Stone–Wales (SW) defects are comprehensively investigated. By computing the band structures for nanoribbons of varying widths (<em>N</em> = 5, 6, and 7), I observe that SW defects can modulate the electronic properties, particularly the bandgap, in a width-dependent manner. The density of states (DOS) and transmission function analyses confirm these changes, showing that SW defects introduce scattering centers that affect charge carrier mobility. The voltage-current characteristics reveal a negative differential resistance (NDR) phenomenon in SW-defected GeNRs, indicating potential applications in non-linear electronic devices. Furthermore, the thermoelectric properties, as assessed by the Seebeck coefficient (<em>S</em>) and electronic figure of merit (<em>ZT</em>_<em>e</em>), show that SW defects can significantly enhance the <em>ZT</em>_<em>e</em> value, particularly for the <em>N</em> = 6 width, where <em>ZT</em>_<em>e</em> increases by approximately three times. These findings underscore the potential of SW defects to tailor the electronic and thermoelectric properties of germanene nanoribbons for specific applications.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116169"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Linear and third-order nonlinear optical properties of Germanene nanotubes","authors":"Raad Chegel","doi":"10.1016/j.physe.2024.116171","DOIUrl":"10.1016/j.physe.2024.116171","url":null,"abstract":"<div><div>This study presents a comprehensive computational investigation of linear and nonlinear optical properties, including third harmonic generation, intensity-dependent refractive index, and DC Kerr effect, of zigzag Germanene nanotubes (GeNTs) with different radii. Calculations were performed using the tight-binding model, beyond the Dirac cone approximation. The linear optical susceptibility spectra reveal a distinct, radius-independent peak in the ultraviolet region, originating from dipole-allowed transitions across the entire Brillouin zone. Remarkably, the nonlinear optical response exhibits multiple resonant peaks below the band gap in the infrared regime, arising from one-, two-, and three-photon processes between valence and conduction states. The third-order nonlinear susceptibility demonstrates a strong dependence on the nanotube radius, with a red-shift in peak positions and an enhancement in peak intensities for larger radii. Variations in intensity and peak position are attributed to the distinct electronic structures of the GeNTs. These findings provide valuable insights into the design and optimization of GeNT-based nonlinear optical devices, enabling potential applications in frequency conversion, optical switching, and advanced photonic technologies.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116171"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonpolar optical bound polaron in an asymmetrical Gaussian confinement potential quantum well under magnetic field","authors":"F. Manfouo ,&nbsp;S.L. Dongmo Tedo ,&nbsp;S.J. Nobosse Nguemeta ,&nbsp;B. Donfack ,&nbsp;S.C.N. Nguemasson ,&nbsp;J.V. Nguepnang ,&nbsp;A.J. Fotue","doi":"10.1016/j.physe.2024.116173","DOIUrl":"10.1016/j.physe.2024.116173","url":null,"abstract":"<div><div>The properties of weak coupling optical deformation potential (ODP) bound polaron in asymmetrical Gaussian confinement potential quantum well (AGCPQW) in the presence of magnetic field (MF) has been examined. The ground state energy (GSE) and the ground state binding energy (GSBE) of ODP bound polaron are calculated following Lee-Low (LLP) Pines approach. The influence of MF, the height of AGCPQW, the electron-phonon (e-p) coupling constant and Debye cut-off wavenumber (DCOW) on the GSE and the GSBE are also studied. It is shown that the GSE is a decreasing function of height of AGCPQW, e-p coupling constant, Coulombic potential and DCOW. In addition it is an expanding function of the height of AGCPQW. We also found that the GSBE enhanced with height of AGCPQW, e-p coupling strength, Coulombic potential and DCOW, whereas it is a decayed one of the cyclotron frequency. At some critical points the GSE is equal to the GSBE meaning that the free electron and phonon behave as a double polaron helpful for the comprehension of the superconductivity. It is found that the modulation of the height of AGCPQW, the cyclotron frequency, e-p coupling constant and DCOW lead to the control of the properties of the ODP bound polaron in AGCPQW.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116173"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain enhanced thermoelectric performance of Lu2CF2 MXene","authors":"Gourav Rana,&nbsp;Chandan Bera","doi":"10.1016/j.physe.2024.116168","DOIUrl":"10.1016/j.physe.2024.116168","url":null,"abstract":"<div><div>The thermoelectric performance of Lu<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>CF<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> MXene monolayer under biaxial tensile strain is explored using the first-principles method and Boltzmann transport theory. Biaxial strain enhances the electron–phonon relaxation time, leading to elevated electrical conductivity and increasing the thermoelectric power factor (PF). Specifically, the PF of n-type Lu<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>CF<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> rises from 4.6 mW/mK² to 13.7 mW/mK² when subjected to a 4% biaxial tensile strain at 700 K, showing an almost threefold increase. Similarly, for p-type, the PF increases to 8.2 mW/mK² from 3.9 mW/mK², which is more than double. The modulation of lattice thermal conductivity (<span><math><msub><mrow><mi>κ</mi></mrow><mrow><mi>l</mi></mrow></msub></math></span>) also occurs under tensile strain conditions. The <span><math><msub><mrow><mi>κ</mi></mrow><mrow><mi>l</mi></mrow></msub></math></span> at 300 K, also decreases to 16.2 Wm⁻¹K⁻¹ from 88 Wm⁻¹K⁻¹ under 6% tensile strain, indicating an approximately 81.5% reduction. The combination of higher PF and lower <span><math><msub><mrow><mi>κ</mi></mrow><mrow><mi>l</mi></mrow></msub></math></span> results in a significant enhancement in the thermoelectric figure of merit (ZT), increasing it from 0.07 to 0.68 for n-type and from 0.06 to 0.63 for p-type at 700 K. The ZT sees an almost tenfold increase compared to the strain-free scenario, indicating that biaxial tensile strain can effectively enhance the thermoelectric efficiency of the monolayer of Lu<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>CF<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"167 ","pages":"Article 116168"},"PeriodicalIF":2.9,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143158212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Realization of the novel optical absorption device with broadened bandwidth based on the multi-layered doped nanofilm structures","authors":"Lin Zhao ,&nbsp;Jiaxin Li ,&nbsp;Huaning Wu","doi":"10.1016/j.physe.2025.116195","DOIUrl":"10.1016/j.physe.2025.116195","url":null,"abstract":"<div><div>The demand for optical absorption devices with high efficiency and wide bandwidth is rising. However, current methods like CPA and ENZ media with lossy dopants achieve perfect absorption only at specific frequencies or very narrow bands, limiting their broader use.Thus, broadening the operating bandwidth of high absorption is crucial for designing high-performance optical absorption devices. In this study, the relationship between the number of dopants and the resonant bandwidth of the doped ENZ medium structure was thoroughly analyzed. The results thus obtained show that the resonant bandwidth of the whole structure significantly widened as the number of dopants increased, thus expanding the bandwidth of high absorption of this structure. In addition, a multi-layer Ag/SiC nanofilm structure filled with dopants was used to design a light absorption device insensitive to the angle of incidence, achieving nearly 100 % absorption efficiency at a wavelength of 430 nm with a good working bandwidth.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116195"},"PeriodicalIF":2.9,"publicationDate":"2025-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143174296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Janus HfMCO2 (M= Cr, Mo, Fe, Nb, Sc, Ta, Ti, V, W, Y and Zr) MXene: Promising candidates for electrode of supercapacitor","authors":"Rui-Zhou Zhang ,&nbsp;Xiao-Hong Li ,&nbsp;Hong-Ling Cui","doi":"10.1016/j.physe.2025.116196","DOIUrl":"10.1016/j.physe.2025.116196","url":null,"abstract":"<div><div>Janus MXenes have received greater attention for their outstanding properties. The electronic and optical properties, effective mass and quantum capacitance of Janus HfMCO₂ (M = Cr, Mo, Fe, Nb, Sc, Ta, Ti, V, W, Y and Zr) are investigated by using first-principles calculation with HSE06 functional. HfMCO₂ (M = Cr, Fe, V, Y) are magnetic semiconductors. The doping of Mo, Nb, Sc, Ta, and W atoms induces the transition of Hf₂CO₂ from semiconductor to metal. HfCrCO₂, HfScCO₂, and HfVCO₂ have stronger magnetism with magnetic moments. The significant larger m_h∗ of HfFeCO₂ indicates the smaller hole mobility in valence band and slow diffusion. The optical analysis indicates that all the systems except HfVCO₂ have better conductivity than Hf₂CO₂, especially for HfWCO₂ with <em>ε</em>₁(0) of 14.08. The doping of Fe, Ti, Mo, W and Zr atoms drastically increases the absorption coefficient in infrared and visible regions. Janus HfMCO₂ (M = Cr, Fe, Mo, Sc, Ti, V, W and Zr) are suitable for cathode electrode, while HfTaCO₂ and HfYCO₂ are suitable for symmetrical electrode material. Large voltage only changes the electrode types of HfWCO₂ and HfYCO₂ to symmetric and cathode electrodes, respectively. The electrode type of Janus HfMCO₂ having mixed terminations are analyzed.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116196"},"PeriodicalIF":2.9,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143174295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of screening on seebeck coefficient in bilayer graphene/AlGaAs electron gas","authors":"Vo Van Tai ,&nbsp;Nguyen Duy Vy ,&nbsp;Truong Van Tuan ,&nbsp;Nguyen Quoc Khanh","doi":"10.1016/j.physe.2025.116194","DOIUrl":"10.1016/j.physe.2025.116194","url":null,"abstract":"<div><div>The knowledge of Seebeck coefficient is a key factor in optimization of thermoelectric materials and finding right applications for it. A high sensitivity to structural change makes thermopower measurements an excellent technique for the study on the charge transport properties of a given material. The phonon-drag term dominates at low temperature in the Seebeck coefficient. This study examines the temperature-dependent screening effect on the phonon-drag-induced Seebeck coefficient (<span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span>) in a bilayer graphene (BLG)-AlGaAs/quasi-two-dimensional electron gas (q2DEG) system at the temperature below 50 K. The BLG layer interacts with both deformation potential acoustic phonons and stronger piezoelectric field acoustic phonons from AlGaAs/GaAs. We compare the electron–phonon interactions in BLG with and without screening by q2DEG. The screening effect reduces <span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span>, particularly at low temperatures, and shows a strong dependence on the carrier density in the BLG layer. The double-layer screening function increases <span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span> with layer separation (d), paralleling the monolayer screening at large d. Additionally, varying the GaAs quantum well width reveals that <span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span> increases with width less than 100 Å under double-layer screening but remains unchanged beyond this threshold, while monolayer screening decreases <span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span> as the width increases. Both screening functions enhance <span><math><mrow><msup><mi>S</mi><mi>g</mi></msup></mrow></math></span> when the BLG carrier density is lower than that of q2DEG, though the magnitude difference between them is minimal.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116194"},"PeriodicalIF":2.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143174175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional GaN of wurtzite、hexagonal and haeckelite (4|8) structure with multiple layers: A first principle DFT study on structural and optoelectronic properties","authors":"Yuting Dai ,&nbsp;Sihao Xia ,&nbsp;Hongkai Shi ,&nbsp;Yuyan Wang ,&nbsp;Xian Wu ,&nbsp;Yu Diao","doi":"10.1016/j.physe.2025.116193","DOIUrl":"10.1016/j.physe.2025.116193","url":null,"abstract":"<div><div>This study aims to investigate the optoelectronic properties of three different structures of two-dimensional GaN, namely wurtzite, hexagonal, and haeckelite, through first-principles calculations. The goal is to provide a theoretical foundation for the design and development of high-performance optoelectronic devices. As a new type of semiconductor material, two-dimensional GaN has attracted much attention due to its excellent optoelectronic properties. In our study, we found that as the layer thickness increases, the optimal structure of two-dimensional GaN transitions from the hexagonal phase to the haeckelite phase, and finally stabilizes in the wurtzite structure. During this process, the work function continuously increases and tends to stabilize, with the wurtzite structure's work function eventually stabilizing at 5.50 eV, while the work functions of the hexagonal and haeckelite (4|8) structures stabilize around 7.35 eV. The wurtzite structure exhibits a significantly enhanced internal electric field between layers, whereas the hexagonal and haeckelite structures do not show interlayer polarization due to the coincidence of positive and negative charge centers. Compared to bulk materials, two-dimensional GaN shows a larger bandgap, which gradually decreases with increasing layer thickness and tends to stabilize at around 10 layers. The hexagonal structure has the largest bandgap, while the wurtzite and haeckelite structures have relatively smaller bandgaps. Specifically, the bandgap of the wurtzite structure decreases from 5 eV for a single layer to approximately 1.50 eV at around 10 layers. The hexagonal structure exhibits the largest bandgap of 2.61 eV at 5 layers, stabilizing at around 2.60 eV at 10 layers. The haeckelite structure's bandgap decreases from 2.71 eV at 5 layers to 1.61 eV at 15 layers. The valence band maximum is primarily contributed by the p-states of nitrogen and gallium, while the conduction band minimum originates from the hybridization of the s-orbitals of nitrogen and gallium. Additionally, the effective mass continuously decreases with increasing layer thickness, with the haeckelite structure showing the highest effective mass of 0.97m₀ at a single layer, reducing to 0.27m₀ at 15 layers. Our research also examined the optical properties of these three structures, providing a comprehensive understanding of the optoelectronic performance of two-dimensional GaN. These findings not only reveal the relationship between the structure and properties of two-dimensional GaN but also offer important references for future applications in the field of solid-state optoelectronics.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116193"},"PeriodicalIF":2.9,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143174174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}