高掺杂InAs纳米线场效应晶体管中接触界面对输运统计的影响

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-06-14 DOI:10.1016/j.physe.2025.116309

A.A. Zhukov

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引用次数: 0

摘要

利用扫描栅显微技术对高掺杂InAs纳米线的场效应晶体管进行了磁输运测量。在高和低电流载流子浓度下观察到两种不同的输运机制。揭示并研究了接触界面中阻挡势垒对通用电导波动统计的重要影响。

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The influence of contact interfaces on transport statistics in field-effect transistors based on highly-doped InAs nanowires

The magnetotransport measurements including mapping with scanning gate microscopy technique were done on field-effect transistors based on highly doped InAs nanowires. Two different transport regimes at high and low current carrier concentration were observed. The crucial influence of the blocking barriers in contact interfaces on statistics of universal conductance fluctuations is revealed and investigated.

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures