Tunable optoelectronic and hydrogen evolution reaction properties of decorated 2D materials (Ga2O3 monolayer, ZnO monolayer and borophene)

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-09-11 DOI:10.1016/j.physe.2025.116372

Rongzhi Wang , Jin-Cheng Zheng

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引用次数: 0

Abstract

Two-dimensional (2D) materials have received considerable attention for next-generation technological applications due to their unique physical properties. Herein, decorated monolayers (O-V-Ga₂O₃-m, Co doped ZnO-m and Fe cluster@Borophene) with high visible light absorption ability and hydrogen evolution reaction (HER) catalytic performance are reported. Strain and electric field could precisely tune the optical and HER properties of O-V-Ga₂O₃-m, Co doped ZnO-m and Fe cluster@Borophene. It is shown that the absorption peaks in the visible region red-shift with the increasement of strain or adding electric field. Both strain and electric field can modulate the absorption peaks of decorated monolayers in the visible zone and help to obtain optimal HER performance. These features advocate effective applications of O-V-Ga₂O₃-m, Co doped ZnO-m and Fe cluster@Borophene in optoelectronic devices and HER electrocatalysts.

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修饰二维材料（Ga2O3单层、ZnO单层和硼罗芬）的可调光电和析氢反应性质

二维（2D）材料由于其独特的物理性质，在下一代技术应用中受到了相当大的关注。本文报道了具有高可见光吸收能力和析氢反应（HER）催化性能的修饰单层膜（O-V-Ga2O3-m， Co掺杂ZnO-m和Fe cluster@Borophene）。应变和电场可以精确调节O-V-Ga2O3-m、Co掺杂ZnO-m和Fe cluster@Borophene的光学和HER性质。结果表明，随着应变的增加或电场的增加，可见光区的吸收峰发生红移。应变和电场都可以调制修饰单层膜可见光区的吸收峰，从而获得最佳的she性能。这些特性促进了O-V-Ga2O3-m、Co掺杂ZnO-m和Fe cluster@Borophene在光电器件和HER电催化剂中的有效应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures