{"title":"Polarization effect on the Auger recombination coefficient in single InGaN/GaN quantum wells","authors":"V.S. Slipokurov , A.V. Zinovchuk","doi":"10.1016/j.physb.2025.417278","DOIUrl":"10.1016/j.physb.2025.417278","url":null,"abstract":"<div><div>We investigate the effect of polarization on the direct Auger recombination rate in In<sub>x</sub>Ga<sub>1-x</sub>N/GaN single quantum wells by full Brillouin zone calculations within the framework of the empirical pseudopotential linear combination of bulk bands method for the electronic structure description. It is compared the Auger coefficients as a function of alloy composition for realistic and artificial polarization-free quantum wells. The results reveal that the polarization fields strongly enhance the Auger recombination rate for the alloy compositions <em>x</em> < 0.4 while for highly alloyed quantum wells (<em>x</em> > 0.5) the effect of polarization is weak. Unlike the bulk case, the calculated Auger recombination coefficient in the quantum wells corresponding to the visible spectrum optical transition energies demonstrates a weak compositional dependence with a trend to decrease from 2.7 × 10<sup>−18</sup> cm<sup>4</sup>s<sup>−1</sup> (blue emitting quantum wells) to 2.5 × 10<sup>−19</sup> cm<sup>4</sup>s<sup>−1</sup> (red emitting quantum wells).</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417278"},"PeriodicalIF":2.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143865149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigations on electronic structure and transport property modifications of La0.7Ca0.3-xKxMnO3 ceramics","authors":"Pratik Lakhani , Paresh Sidhdhapura , Mayur Vala , Tanvi Dudhrejiya , Nirali Udani , Sandhya Dodia , Gaurav Jadav , Pankaj Solanki , Dhananjay Dhruv , Sergei A. Sharko , J.H. Markna , Bharat Kataria","doi":"10.1016/j.physb.2025.417279","DOIUrl":"10.1016/j.physb.2025.417279","url":null,"abstract":"<div><div>The partial substitution of monovalent alkali metal K<sup>+</sup> at the divalent Ca<sup>2+</sup> site in La<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> manganites (LCKMO) leads to remarkable structural, electronic, and magnetic modifications. This report combines structural, transport, magneto transport, and X-ray photoelectron spectroscopy (XPS) studies to examine these modifications in LCKMO samples with varying alkali metal content. X-ray diffraction (XRD) confirmed the orthorhombic crystal structure and single-phasic nature, while transport and magnetoresistance studies highlighted the effects of K<sup>+</sup> substitution on the metal-insulator transition temperature (T<sub>P</sub>) and resistivity. X-ray Photoelectron Spectra (XPS) analysis decodes the Mn<sup>3+</sup>/Mn<sup>4+</sup> mixed-valence states, providing insights into the Jahn-Teller (JT) distortions and double-exchange (DE) mechanisms manipulating the observed magnetic behaviour. These findings highlight the carping interplay of structural and electronic modifications in tailoring the functional properties of manganites for potential technological applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417279"},"PeriodicalIF":2.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Krishna Rao, T. Durga Rao, K. Naga Raju, B. Sattibabu
{"title":"Observation of exchange bias properties in Lu substituted BiFeO3","authors":"K. Krishna Rao, T. Durga Rao, K. Naga Raju, B. Sattibabu","doi":"10.1016/j.physb.2025.417263","DOIUrl":"10.1016/j.physb.2025.417263","url":null,"abstract":"<div><div>Bi<sub>1-x</sub>Lu<sub>x</sub>FeO<sub>3</sub>, x = 0.00, 0.03, 0.05 and 0.07 compounds were synthesized using the solid-state reaction method. Room temperature structural analysis was carried out for the prepared compounds through Rietveld refinement. The studies showed that the compounds were stabilized in a rhombohedral <em>R</em>3<em>c</em> structure at room temperature. UV–visible spectroscopy measurements revealed a slight widening in the optical band gap, from 2.03 eV to 2.08 eV, with the increase in x. The magnetic measurements indicated that remanent magnetization and coercive fields increased with the increase in the Lu substitution. Interestingly, the substituted compounds exhibited exchange bias properties under zero field cooled conditions. Polarization measurements indicated better ferroelectric polarization hysteresis loops observed in the compounds with higher Lu substitution. Impedance measurements demonstrated an improved insulating behaviour with Lu substitution. The grain and grain boundary resistances were extracted using a two-parallel RC circuit model. Additionally, the materials exhibited a negative temperature coefficient of resistance, as was evidenced by the <em>ac</em> conductivity measurements in all the prepared compounds.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417263"},"PeriodicalIF":2.8,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Izzat Khan , Amir Ullah , Nasir Rahman , Mudasser Husain , Hind Albalawi , Amani H. Alfaifi , Khamael M. Abualnaja , Wafa Mohammed Almalki , Vineet Tirth , Ahmed Azzouz-Rached , Mohammad Sohail
{"title":"Computational insights into structural, elastic, optoelectronic, and thermodynamic properties of silver-based germanium ternary halide perovskites","authors":"Izzat Khan , Amir Ullah , Nasir Rahman , Mudasser Husain , Hind Albalawi , Amani H. Alfaifi , Khamael M. Abualnaja , Wafa Mohammed Almalki , Vineet Tirth , Ahmed Azzouz-Rached , Mohammad Sohail","doi":"10.1016/j.physb.2025.417265","DOIUrl":"10.1016/j.physb.2025.417265","url":null,"abstract":"<div><div>This study explores the characteristics of AgGeX<sub>3</sub> (X = Cl and F) using density functional theory (DFT), examining their structural, electronical, optical, elastic, thermal properties, and phonon modes. Both compounds have a perovskite-like crystal structure, with AgGeCl<sub>3</sub> having a wider lattice constant (5.17 Å) than AgGeF<sub>3</sub> (4.36 Å). AgGeCl<sub>3</sub> has an indirect band gap of 0.553 eV, suitable for wide-range light absorption in optoelectronics, whereas AgGeF<sub>3</sub> possesses a larger band gap. AgGeF<sub>3</sub> exhibits a higher bulk modulus 53.26 GPa than AgGeCl<sub>3</sub> 28.91 GPa, implying greater resistance to deformation. Optical properties shows that AgGeCl<sub>3</sub> have high absorption coefficient, optical conductivity, refractivity, and reflectivity which make it suitable to absorb light in visible range while AgGeF<sub>3</sub> in UV range. By analyzing their thermal properties, AgGeF<sub>3</sub> shows higher heat absorption (157.7 J/mol·K) and resistance to temperature changes (480 K at 20 GPa), while expanding less (6 × 10<sup>−5</sup> K<sup>−1</sup> at 0 GPa) and shrinking less under pressure. This makes it more stable under heat. In contrast, AgGeCl<sub>3</sub> expands more (24 × 10<sup>−5</sup> K<sup>−1</sup> at 0 GPa) and resists temperature changes less (450 K at 20 GPa). These differences suggest AgGeF<sub>3</sub> is better for applications with high pressure and sensitive temperature requirements, while AgGeCl<sub>3</sub> is better for tasks like converting heat to electricity, creating electricity from light, and making electronics that can bend.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417265"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143868423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Anju , Hiba Muhammed , K. Arun , B.K. Bahuleyan , M.T. Ramesan
{"title":"Synthesis of nanocurcumin conjugated titanium dioxide bio-nanocomposites for enhanced optical, electrical, and antibacterial applications","authors":"P. Anju , Hiba Muhammed , K. Arun , B.K. Bahuleyan , M.T. Ramesan","doi":"10.1016/j.physb.2025.417269","DOIUrl":"10.1016/j.physb.2025.417269","url":null,"abstract":"<div><div>This study explores the synthesis of nanocurcumin (NCur) and its impact on the structural, electrical, and antibacterial properties of titanium dioxide (TiO<sub>2</sub>) through a simple solvent-free mechanical mixing. FTIR confirmed NC-TiO<sub>2</sub> interactions, while UV–Vis spectroscopy showed a red shift and a reduced bandgap from 3.571 eV to 2.550 eV. XRD verified the crystalline retention of TiO<sub>2</sub>. Morphological analysis using optical microscopy and FE-SEM showed uniform NCur dispersion in TiO<sub>2</sub> up to 6 wt%, beyond which agglomeration occurred. Electrical impedance studies demonstrated a 1.127-fold increase in conductivity at 100 Hz and a reduction in activation energy from 5.37 × 10<sup>−5</sup>eV to 5.00 × 10<sup>−5</sup> at 6 wt% NCur. Additionally, the dielectric constant increased by 29 %, enhancing the material's energy storage potential. Antibacterial assays indicated that TiO<sub>2</sub>/NCur bio-nanocomposites exhibited significant antibacterial activity against <em>E. coli</em>, increasing efficacy by 183.33 %. These multifunctional properties make TiO<sub>2</sub>/NCur composites highly promising for applications in biosafe electronics, energy storage, and antibacterial technologies.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417269"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Ullah , C.S. Sarumaha , A. Angnanon , I. Khan , M. Shoaib , S.A. Khattak , S. Kothan , G. Rooh , J. Kaewkhao
{"title":"Luminescence and radiative features of Gd2O3 modified and Pr3+ doped borate glass via energy transfer from Gd to Pr for blue- and UV-excited WLEDs","authors":"I. Ullah , C.S. Sarumaha , A. Angnanon , I. Khan , M. Shoaib , S.A. Khattak , S. Kothan , G. Rooh , J. Kaewkhao","doi":"10.1016/j.physb.2025.417270","DOIUrl":"10.1016/j.physb.2025.417270","url":null,"abstract":"<div><div>We investigate the XRD, FTIR, structure variation factors, optical absorption, luminescence and radiative behaviors of mixed Gd<sub>2</sub>O<sub>3</sub> in a 20Li<sub>2</sub>O<sub>3</sub>-30SrO-(49-x)B<sub>2</sub>O<sub>3</sub>-xGd<sub>2</sub>O<sub>3</sub>-1Pr<sub>2</sub>O<sub>3</sub> glass. The Judde-Ofelt (J-O) analysis of the absorption spectra is performed to deduce intensity parameters. The refractive index and Ω<sub>λ = 2, 4, 6</sub> values are employed to evaluate the branching ratios (β<sub>R</sub>), and radiative transition probabilities (A<sub>R</sub>) of Pr<sup>3+</sup> luminescent states. At a wavelength of 444 nm for optical pumping, critical factors such as significant optical gain, and gain bandwidth in the <sup>3</sup>P<sub>o</sub> → <sup>3</sup>H<sub>4</sub> transition for designing visible laser systems are estimated. The Gd<sup>3+</sup> ions sensitize the Pr<sup>3+</sup> ions through ET from their <sup>6</sup>P<sub>7/2</sub> state to the <sup>3</sup>P<sub>J = 2, 1, 0</sub> states of Pr<sup>3+</sup> ions. The extracted Commission Internationale de l'Éclairage (CIE), correlated color temperature (CCT) and color purity (CP) values from the luminescence spectra demonstrate the emission of white light. These results have implications for WLEDs and optical amplification.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417270"},"PeriodicalIF":2.8,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143867671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Liao , Lidan Lu , Guang Chen , Yingjie Xu , Li Yang , Lianqing Zhu
{"title":"Unstable states of non-volatile reconfigurable photonic device based on phase change material","authors":"Jie Liao , Lidan Lu , Guang Chen , Yingjie Xu , Li Yang , Lianqing Zhu","doi":"10.1016/j.physb.2025.417274","DOIUrl":"10.1016/j.physb.2025.417274","url":null,"abstract":"<div><div>Numerous non-volatile reconfigurable photonic devices based on phase change materials have been proposed and applied to photonic integrated circuits. However, the unstable states of the devices after crystallization and amorphization excitation in these studies have not been investigated and discussed. In this work, a non-volatile reconfigurable photonic device is fabricated to estimate its stability. Under electrical pulse excitation, the device's output optical power can switch between two states with an extinction ratio of 15 dB. The results reveal that it takes some time for the device to reach a relatively stable state after excitation, and both pulse waveform and ambient temperature affect the stability of the device state. Therefore, it is of great significance to draw attention to improve the practical reliability of non-volatile reconfigurable photonic devices.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417274"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ivan S. Zhidkov , Maxim F. Gerasimov , Victoria V. Ozerova , Lyubov A. Frolova , Marina I. Ustinova , Azat F. Akbulatov , Andrey I. Kukharenko , Pavel A. Troshin , Ernst Z. Kurmaev
{"title":"XPS visualization of soft and hard Lewis base passivation of defects in MAPbI3 perovskite","authors":"Ivan S. Zhidkov , Maxim F. Gerasimov , Victoria V. Ozerova , Lyubov A. Frolova , Marina I. Ustinova , Azat F. Akbulatov , Andrey I. Kukharenko , Pavel A. Troshin , Ernst Z. Kurmaev","doi":"10.1016/j.physb.2025.417268","DOIUrl":"10.1016/j.physb.2025.417268","url":null,"abstract":"<div><div>A new method for visualization of uncoordinated lead (Pb<sup>2+</sup>) in solution processed polycrystalline halide perovskite films is presented. The method is based on the measurements of XPS spectra with high energy resolution, which show a narrowing of the low-energy part of the Pb 4f-core level spectra due to passivation of halide vacancies with soft and hard Lewis base doping and reduction of contribution of uncoordinated lead (Pb<sup>2+</sup>) at binding energy of ∼137.8 eV. Based on XPS Pb 4f-spectra measurements the influence of size of hard Lewis base metal iodides on the passivation of surface defects in MAPbI<sub>3</sub> perovskite is discussed. It is found that at low concentrations (1–5 %) CaI<sub>2</sub>, BaI<sub>2</sub>, AgI with metal ionic radius ≥1.0 Å the metal atoms substitute the coordinated Pb<sup>2+</sup> atoms whereas at higher concentrations they are located at grain boundaries and passivate the uncoordinated lead sites. For hard Lewis base metal iodides with small ionic radii (0.7–0.8 Å) (MnI<sub>2</sub>, FeI<sub>2</sub>, CuI) the situation is quite different and metals occupy the interstitial positions keeping the uncoordinated Pb<sup>2+</sup> ions to be unchanged. The use of appropriate charge-transport layers and soft Lewis base molecular modifiers can improve the crystallization of perovskite films by reducing the number of defects formed, which is also reflected in the XPS Pb 4f<sub>7/2</sub> spectra.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"711 ","pages":"Article 417268"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ali Osman Tezcan , Asrın Baran Çavdar , Serkan Eymur , Nihat Tuğluoğlu
{"title":"Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination","authors":"Ali Osman Tezcan , Asrın Baran Çavdar , Serkan Eymur , Nihat Tuğluoğlu","doi":"10.1016/j.physb.2025.417273","DOIUrl":"10.1016/j.physb.2025.417273","url":null,"abstract":"<div><div>The Au/BOD-Z-EN/n-Si Schottky barrier diode was studied using capacitance/conductance-voltage (<em>C</em>/<em>G</em>-<em>V</em>) and capacitance/conductance-frequency (<em>C</em>/<em>G</em>-<em>f</em>) characteristics under different illumination intensities and in the dark. The increment in <em>C</em> and <em>G</em> at the low-frequency regions, at which the surface states at the semiconductor-organic interface can easily follow the applied ac signal, could be attributed to the surface states. Under illumination, the appearance of peaks in conductance versus logarithm of frequency (<span><math><mrow><msub><mi>G</mi><mi>p</mi></msub><mo>/</mo><mi>ω</mi></mrow></math></span>- log <span><math><mrow><mi>f</mi></mrow></math></span>) graphs confirmed such interface trap states. It was found that the interface trap density (<span><math><mrow><msub><mi>D</mi><mrow><mi>i</mi><mi>t</mi></mrow></msub></mrow></math></span>) decreases from 5.81 × 10<sup>12</sup> eV<sup>−1</sup>cm<sup>−2</sup> to 2.87 × 10<sup>12</sup> eV<sup>−1</sup>cm<sup>−2</sup> while relaxation time (τ) decreases from 15.76 μs to 3.94 μs with increasing light intensity. The results showed that the barrier height (<span><math><mrow><msub><mi>Φ</mi><mi>B</mi></msub></mrow></math></span>) dropped, going from 0.667 eV (in the dark) to 0.582 eV (100 mW/cm<sup>2</sup>). The donor concentration (<span><math><mrow><msub><mi>N</mi><mi>D</mi></msub></mrow></math></span>) rose as the illumination intensity increased, going from 5.46 × 10<sup>15</sup> cm<sup>−3</sup> (in the dark) to 8.08 × 10<sup>15</sup> cm<sup>−3</sup> (100 mW/cm<sup>2</sup>).</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417273"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143858729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Exploration of the impact of indium-doping on the microstructural, dispersion, linear, and nonlinear optical properties of the ZnS thin films","authors":"Abdullah Alsulami","doi":"10.1016/j.physb.2025.417271","DOIUrl":"10.1016/j.physb.2025.417271","url":null,"abstract":"<div><div>Good quality pure and indium-doped ZnS layers (containing 4, 9, and 12 wt% In) were produced using an economical nebulizer spray pyrolysis technique. The XRD observations indicate a cubic structure for the examined indium-doped ZnS layers. The crystallite size decreased from 54.58 to 23.68 nm with the augmentation of indium content from 4 to 12 wt%. The optical band gap of the studied layers decreased from 3.53 to 2.94 eV as the indium was introduced into ZnS, although the Urbach energy values enhanced from 0.78 to 0.86 eV with the rise in indium doping from 4 to 12 wt%. Furthermore, the refractive index of the examined layers increased from 2.63 to 3.81 with the augmentation of indium content from 4 to 12 wt%. Investigating nonlinear optical properties involves augmenting the nonlinear refractive index of indium-doped ZnS layers by increasing the indium concentration from 4 to 12 wt%. The study of the optoelectrical parameters reveals enhancements in optical conductivity, optical carrier concentration, electrical conductivity, optical dielectric constants, and relaxation time through an increased indium ratio. The indium-doped ZnS exhibited n-type conductivity.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"710 ","pages":"Article 417271"},"PeriodicalIF":2.8,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143844619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}