Physica B-condensed Matter最新文献_第4页

Effect of AISe quantum dots synthesis method and TiO2 substrate thickness on the performance of quantum dots-sensitized solar cells AISe量子点合成方法和TiO2衬底厚度对量子点敏化太阳能电池性能的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417843

Moniba Ahmadi, Maziar Marandi

{"title":"Effect of AISe quantum dots synthesis method and TiO2 substrate thickness on the performance of quantum dots-sensitized solar cells","authors":"Moniba Ahmadi, Maziar Marandi","doi":"10.1016/j.physb.2025.417843","DOIUrl":"10.1016/j.physb.2025.417843","url":null,"abstract":"<div><div>This study reports the first synthesis of ternary AgInSe<sub>2</sub> (AISe) quantum dots using chemical precipitation at 90 °C and a combined precipitation–hydrothermal method in aqueous solution with glutathione capping. Three Ag:In ratios (1:6, 2:5, 3:4) were tested in the chemical precipitation method, showing that higher silver content caused a redshift in absorption and decreased bandgap energy. The TiO<sub>2</sub>/AISe(1:6)/ZnS photoanode achieved a PCE of 0.56 %, which increased to 1.72 % using the hydrothermal approach. Optimizing TiO<sub>2</sub> thickness and the number of CdS deposition cycles enhanced light absorption, charge separation, and photocurrent density (12 mA/cm<sup>2</sup>) with an open-circuit voltage of 450 mV, yielding 4.2 % efficiency. Incorporating TiO<sub>2</sub> hollow spheres as a scattering layer further improved performance, achieving a maximum PCE of 5.55 %, representing a 46 % increase over cells without scattering layers. These results demonstrate the effectiveness of the optimized AISe-based QDSSC structure for high-performance solar energy conversion.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417843"},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the structural, optoelectronic, transport, and thermoelectric properties of half-heusler KSrX (X = P, As) for optoelectronic, photovoltaic, and thermoelectric applications 探索半赫斯勒KSrX （X = P, As）在光电、光伏和热电应用中的结构、光电、输运和热电性能

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417824

Mohammed Amine Boudjeltia , Mokhtar boudjelal , Mohammed Houari , Zoubir Aziz , Samir Bentata , Bouabdellah Bouadjemi , Bennani Mohammed Abderrahim

{"title":"Exploring the structural, optoelectronic, transport, and thermoelectric properties of half-heusler KSrX (X = P, As) for optoelectronic, photovoltaic, and thermoelectric applications","authors":"Mohammed Amine Boudjeltia , Mokhtar boudjelal , Mohammed Houari , Zoubir Aziz , Samir Bentata , Bouabdellah Bouadjemi , Bennani Mohammed Abderrahim","doi":"10.1016/j.physb.2025.417824","DOIUrl":"10.1016/j.physb.2025.417824","url":null,"abstract":"<div><div>This study provides a comprehensive examination of the structural, electronic, mechanical, and thermoelectric properties of KSrP and KSrAs half-Heusler compounds using density functional theory (DFT) with the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method. Our analysis identifies the Type 2 nonmagnetic phase as the most stable configuration, confirmed by phonon dispersion results with no imaginary frequencies, indicating dynamic stability. The compounds exhibit indirect semiconductor bandgaps along the X–Γ direction as revealed by the band structure and density of states. Elastic property calculations confirm mechanical stability, flexibility and near-isotropic behavior. Thermoelectric properties show high Seebeck coefficients and low lattice thermal conductivities, resulting in a favorable figure of merit that increases with temperature (ZT ∼ 0.8). These results indicate KSrP and KSrAs as promising materials for thermoelectric applications, with potential for improved performance through doping. The optical properties of KSrP and KSrAs show strong visible and UV interactions, making them ideal for optoelectronic and photovoltaic uses. Their plasmonic activity (6–13 eV) supports applications in sensors and UV shielding.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417824"},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145158643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlation between lattice distortions and flux pinning behavior in benzene-doped Fe-sheathed MgB2 wires 苯掺杂铁护套MgB2线晶格畸变与磁钉钉行为的关系

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417842

H. Ağıl , A. Gencer

{"title":"Correlation between lattice distortions and flux pinning behavior in benzene-doped Fe-sheathed MgB2 wires","authors":"H. Ağıl , A. Gencer","doi":"10.1016/j.physb.2025.417842","DOIUrl":"10.1016/j.physb.2025.417842","url":null,"abstract":"<div><div>This study investigates the effects of benzene-derived carbon doping on the structural and superconducting properties of Fe-sheathed MgB<sub>2</sub> wires fabricated by the in-situ PIT method. Differential scanning calorimetry showed that benzene addition shifts the MgB<sub>2</sub> formation temperature and reduces reaction enthalpy, indicating modified phase formation. X-ray diffraction confirmed lattice parameter changes due to partial carbon substitution, while EDX revealed locally limited carbon distribution. AC magnetic susceptibility and magnetization measurements demonstrated that doping enhanced the irreversibility field and critical current density, especially at high fields. Dew-Hughes model analysis showed that the flux pinning mechanism shifted from point pinning in the pure sample to surface pinning in the doped wires. These improvements result from combined lattice distortions and phase effects caused by the aromatic carbon source. The findings highlight benzene as an effective carbon dopant for tailoring flux pinning behavior and improving the high-field performance of MgB<sub>2</sub> superconductors, despite potential carbon inhomogeneity.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417842"},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145158645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric response function of CdF2 single crystal in the THz–IR ranges CdF2单晶在太赫兹-红外波段的介电响应函数

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417840

G.A. Komandin , I.I. Buchinskaya , S.V. Kuznetsov , I.E. Spector , P.P. Fedorov

引用次数: 0

Variable-fluence electrical and transmission electron microscopy studies of defects formed in arsenic-implanted HgCdTe 砷注入HgCdTe中形成缺陷的变通量电显微镜和透射电镜研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417845

A.G. Korotaev , A.V. Voitsekhovskii , K.D. Mynbaev , V.S. Varavin , S.A. Dvoretsky , M.V. Yakushev

{"title":"Variable-fluence electrical and transmission electron microscopy studies of defects formed in arsenic-implanted HgCdTe","authors":"A.G. Korotaev , A.V. Voitsekhovskii , K.D. Mynbaev , V.S. Varavin , S.A. Dvoretsky , M.V. Yakushev","doi":"10.1016/j.physb.2025.417845","DOIUrl":"10.1016/j.physb.2025.417845","url":null,"abstract":"<div><div>Arsenic implantation with ion energy 190 keV and fluences 10<sup>12</sup>, 10<sup>13</sup>, and 10<sup>14</sup> cm<sup>−2</sup> was performed into a molecular beam epitaxy-grown <em>p</em>–Hg<sub>1-х</sub>Cd<sub>х</sub>Te (<em>х</em> = 0.22) film. The implanted samples were studied with electrical measurements and transmission electron microscopy. The implantation-damaged layers in all the samples appeared to be quite similar and consisted of four sub-layers. These included: a sub-surface layer with low defect density, a deeper layer with big dislocation loops, a yet deeper layer with smaller loops, and a layer with point defects. The characteristic sizes of the first three sub-layers and the density of the defects in them were found to depend on the ion fluence. The results of microstructural studies were compared to those of the Hall-effect measurements processed with discrete mobility spectrum analysis. The fluence dependence of both the carrier concentration and the depth of the <em>p–n</em> junction was established.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417845"},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sonochemical synthesis of CuSnO3 NPs as a photocatalyst for efficient degradation of MB and environmental remediation 声化学合成CuSnO3 NPs光催化剂用于MB的高效降解和环境修复

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-22 DOI: 10.1016/j.physb.2025.417837

Mostafa Abolhasani , Mehdi Boroujerdnia , Mohsen Cheraghizade

{"title":"Sonochemical synthesis of CuSnO3 NPs as a photocatalyst for efficient degradation of MB and environmental remediation","authors":"Mostafa Abolhasani , Mehdi Boroujerdnia , Mohsen Cheraghizade","doi":"10.1016/j.physb.2025.417837","DOIUrl":"10.1016/j.physb.2025.417837","url":null,"abstract":"<div><div>In this study, the synthesis, characterization, and application of CuSnO<sub>3</sub> nanoparticles (NPs) are presented as an efficient photocatalyst for the degradation of methylene blue (MB) under visible irradiation. The CuSnO<sub>3</sub> NPs were synthesized via a facile sonochemical method for the first time and characterized using various techniques to investigate their crystalline structure, elemental composition, morphology, and optical properties. The results demonstrated a significant degradation efficiency, with ∼80 % of MB being degraded. This high efficiency is attributed to the optimal energy band gap of CuSnO<sub>3</sub> NPs, which facilitates effective photon absorption and the generation of reactive oxygen species. Furthermore, the stability and reusability of the photocatalyst were investigated. The sonochemically synthesized CuSnO<sub>3</sub> NPs retained their activity with negligible loss in performance, highlighting their robust stability and potential for long-term application in wastewater treatment, outperforming many catalysts synthesized by conventional routes in long-term performance metrics.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417837"},"PeriodicalIF":2.8,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145221146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature induced lattice vibration and electronic structural behaviors of CrPS4 CrPS4的温度诱导晶格振动及电子结构行为

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-21 DOI: 10.1016/j.physb.2025.417823

Yuhong Li , Qiang Zhang , Mengyao Li , Ningning Su , Ningru Xiao , Xiaofeng Liu , Ting Wang , Pingfan Ning , Yuqiang Li

{"title":"Temperature induced lattice vibration and electronic structural behaviors of CrPS4","authors":"Yuhong Li , Qiang Zhang , Mengyao Li , Ningning Su , Ningru Xiao , Xiaofeng Liu , Ting Wang , Pingfan Ning , Yuqiang Li","doi":"10.1016/j.physb.2025.417823","DOIUrl":"10.1016/j.physb.2025.417823","url":null,"abstract":"<div><div>The temperature-dependent lattice vibration and electronic structure behaviors are undoubtedly worthy of theoretical and experimental attention for two-dimensional (2D) van der Waals (vdW) semiconductor CrPS<sub>4</sub>. Enhanced thermal vibration leads to lattice distortion of tightly packed S atoms and monoclinically metrically arranged Cr and P atoms. The A<sub>I-VI</sub>-type Raman modes (298–673 K) exhibit continuous intensity weakening with a blue shift, whereas the B<sub>I-II</sub>-type Raman modes first reach minimum intensity at 373 K before transforming into the B<sub>III</sub> mode, with an initial intensity enhancement followed by weakening accompanied by a red shift. The lattice symmetry destruction theoretically promotes the temperature-induced metallization transition at about 977 K, characterized by enhanced contributions from s-orbitals (P and S atoms) near the Fermi level (E<sub>F</sub>), with a distinct trend of electronic state delocalization under action of temperature. This work thus elucidates fundamental insights into their potential as temperature-adaptive electronic devices in the CrPS<sub>4</sub>-type family.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417823"},"PeriodicalIF":2.8,"publicationDate":"2025-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145158717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles calculations of magnetic and optical properties of (V, Mn) co-doped ZrS2 （V, Mn）共掺杂ZrS2的磁性和光学性质的第一性原理计算

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-21 DOI: 10.1016/j.physb.2025.417827

Wencheng Ma , Xiaojing Ge , Dongfang Deng , Pengtao Wang , Long Lin

引用次数: 0

Unveiling the effect of temperature and porosity on mechanical behavior and thermal conductivity of GaTe membranes 揭示了温度和孔隙率对GaTe膜力学性能和导热性能的影响

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-20 DOI: 10.1016/j.physb.2025.417834

Thi-Bao-Tien Tran , Te-Hua Fang , Dinh-Quan Doan

{"title":"Unveiling the effect of temperature and porosity on mechanical behavior and thermal conductivity of GaTe membranes","authors":"Thi-Bao-Tien Tran , Te-Hua Fang , Dinh-Quan Doan","doi":"10.1016/j.physb.2025.417834","DOIUrl":"10.1016/j.physb.2025.417834","url":null,"abstract":"<div><div>This study employs molecular dynamics and non-equilibrium molecular dynamics simulations to investigate the mechanical behavior and thermal conductivity of GaTe membranes (GTM) under the effects of temperature and porosity. Tensile simulations show that mechanical properties, including ultimate strength, Young's modulus, fracture strain, and toughness, decrease significantly as temperature increases. Uniaxial and biaxial loading conditions result in distinct fracture patterns and stress distributions, with biaxial tension leading to greater lattice instability. Introducing engineered porosity significantly reduces mechanical performance, with crack initiation and propagation strongly influenced by defect geometry and orientation. The thermal conductivity (TC) of GTM is highly sensitive to sample length, temperature, and porosity. Intrinsic TC values are estimated using length-dependent models, indicating strong phonon scattering in porous membranes. TC decreases with increasing temperature and porosity, as well as with reduced sample length, but is largely unaffected by changes in the temperature difference between the heat source and sink.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417834"},"PeriodicalIF":2.8,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145109535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable wide- and narrow-band terahertz metamaterial absorber using vanadium dioxide 使用二氧化钒的可调谐宽窄带太赫兹超材料吸收器

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-09-19 DOI: 10.1016/j.physb.2025.417826

Huo Zhang , Shilong Zhou , Chuanpei Xu , Zhi Li , Yuee Wang , Xianhua Yin , Tao Chen

{"title":"Tunable wide- and narrow-band terahertz metamaterial absorber using vanadium dioxide","authors":"Huo Zhang , Shilong Zhou , Chuanpei Xu , Zhi Li , Yuee Wang , Xianhua Yin , Tao Chen","doi":"10.1016/j.physb.2025.417826","DOIUrl":"10.1016/j.physb.2025.417826","url":null,"abstract":"<div><div>With the rapid development of terahertz metamaterial absorbers, tunable devices are critical for electromagnetic modulation. This study proposes a phase-transition-driven metamaterial absorber with switchable bandwidth, utilizing vanadium dioxide (VO<sub>2</sub>)'s metal-insulator transition (MIT). Its tri-layer structure includes a gold (Au) bottom plane, polytetrafluoroethylene (PTFE) spacer, and VO<sub>2</sub>-gold (Au) resonator array. Simulations show two modes: metallic VO<sub>2</sub> enables ultra-broadband absorption (2.97–7.12 THz, >90 %); insulating VO<sub>2</sub> exhibits narrowband resonance at 9.43 THz (>99 % absorbance) with quality factor 204.1 and sensitivity 1018 GHz/RIU. It operates polarization-insensitively with >90 % absorption at 50° incidence. This dual-functional design breaks traditional stealth material limitations via adjustable bandwidth, integrates stealth and sensing, and offers new possibilities for adaptive terahertz systems in military camouflage, environmental monitoring, and biomedical fields.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"717 ","pages":"Article 417826"},"PeriodicalIF":2.8,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0