Physica B-condensed Matter最新文献_第4页

Optical and electrical analysis of poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonate) PEDOT:PSS films and characterizations of stretching memory loops based on ITO/PEDOT:PSS/Ag memristor devices

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417153

Ahmed M. Nawar , Obaidallah A. Algethami , I. Zaied , Naif Ahmed Alshehri

{"title":"Optical and electrical analysis of poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonate) PEDOT:PSS films and characterizations of stretching memory loops based on ITO/PEDOT:PSS/Ag memristor devices","authors":"Ahmed M. Nawar , Obaidallah A. Algethami , I. Zaied , Naif Ahmed Alshehri","doi":"10.1016/j.physb.2025.417153","DOIUrl":"10.1016/j.physb.2025.417153","url":null,"abstract":"<div><div>Herein, PEDOT:PSS thin films are successfully fabricated using spin-coating Technique. The particle size distributions were analyzed, and the average particle size was around 6.85 ± 0.023 μm. The electrical resistivity of the fabricated films is characterized at temperatures from 300 to 423k by using a standard four-point probe method. The calculated activation energy decreases from 0.546 ± 0.004 to 0.521 ± 0.006 eV as the film thickness increases from 400 to 532 nm, respectively. The observed decrements in resistance with an increase in temperature suggest that the PEDOT:PSS films may help fabricate negative thermistor NTC applications. The sensitivity factor decreased from 6.9 to 3.5 with the increase in temperature from 300 to 423k, respectively. For manufacturing a thermistor with good performance, a suitable material can have a sensitivity parameter α with values between 1 % and 9 %. The spectrophotometric optical properties of the fabricated films are characterized by using the Reflectance and Transmittance at normal incidence. The investigated optical transitions are direct; the lowest is at the optical gap equal to 0.403 eV, and the other is the bandgap and is equal to 3.773 eV. The analyzed real dielectric constant elucidates a negative permittivity at lower energies less than 1.9 eV. The electrical characteristic hysteresis loop of the fabricated ITO/PEDOT:PSS/Ag device reveals a direct proportional stretching relationship between the range of biasing voltage and the area of the nonlinear hysteresis loops. The obtained experimental data elucidates that the estimated resistance of the fabricated ITO/PEDOT:PSS/Ag device is equivalent to the memristor behaviour of two different Low and High Resistance states.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417153"},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143725942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device engineering for high-performance OLEDs based on 4CzPN thermally activated delayed fluorescent emitter

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417156

Yifan Chen , Zhaoyue Lü , Chen Shen , Zifeng Wang , Lijiang Zhang , Junling Wang

{"title":"Device engineering for high-performance OLEDs based on 4CzPN thermally activated delayed fluorescent emitter","authors":"Yifan Chen , Zhaoyue Lü , Chen Shen , Zifeng Wang , Lijiang Zhang , Junling Wang","doi":"10.1016/j.physb.2025.417156","DOIUrl":"10.1016/j.physb.2025.417156","url":null,"abstract":"<div><div>The electroluminescent performance and luminescent dynamics of devices are explored in depth via doping and host engineering, where thermally activated delayed fluorescent (TADF) material 3,4,5,6-tetrakis(carbazol-9-yl)-1,2-dicyanobenzene (4CzPN) serves as the emitter. The evolution of the exciton recombination zone with different hosts is discussed. In the case of TCTA host, the recombination zone is situated near the EML/ETL interface, resulting in the formation of various excitons, including monomer exciton, electroplex as well as electromer. The competition among these radiative pathways detrimentally affects the device performance and should be circumvented in the design of device structures. The mCP-hosted device provides the best performance with the highest efficiencies of 31.3 cd/A, 15.8 lm/W and 9.13 % due to its efficient energy transfer and balanced charge carrier mobilities. This study emphasizes that device engineering is an effective strategy for manipulating exciton recombination region and energy transfer, thus promoting the development of high performance TADF-based OLEDs.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417156"},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143644183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase field crystal model simulation of transonic dislocations and mode Ⅱ crack propagation

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417154

Zheng Zhong , Yongfeng Huang , Yibo Gao , Run Li , Songlin Yao , Kun Wang , Wenjun Zhu , Wangyu Hu

引用次数: 0

Elucidating of Er211 performance in (Y,Er)Ba2Cu3Oy single-grain bulk superconductors by infiltration growth process

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417152

Aliah Nursyahirah Kamarudin , Muralidhar Miryala , Mohd Mustafa Awang Kechik , Soo Kien Chen , Kean Pah Lim , Mohd Hamzah Harun , Muhammad Kashfi Shabdin , Muhammad Khalis Abdul Karim , Abdul Halim Shaari

{"title":"Elucidating of Er211 performance in (Y,Er)Ba2Cu3Oy single-grain bulk superconductors by infiltration growth process","authors":"Aliah Nursyahirah Kamarudin , Muralidhar Miryala , Mohd Mustafa Awang Kechik , Soo Kien Chen , Kean Pah Lim , Mohd Hamzah Harun , Muhammad Kashfi Shabdin , Muhammad Khalis Abdul Karim , Abdul Halim Shaari","doi":"10.1016/j.physb.2025.417152","DOIUrl":"10.1016/j.physb.2025.417152","url":null,"abstract":"<div><div>The influence of Erbium, Er addition as an effective pinning centre on the microstructure and superconducting properties of transition temperature (<em>T</em><sub>c</sub>) and critical current density (<em>J</em><sub>c</sub>) of (Y,Er)Ba<sub>2</sub>Cu<sub>3</sub>O<sub>y</sub> (Y,Er)123 bulk superconductors were well studied. Y<sub>2</sub>BaCuO<sub>5</sub> (Y211) and Er<sub>2</sub>BaCuO<sub>5</sub> (Er211) with different ratios were prepared to produce (Y,Er)123 bulks by infiltration growth (IG) technique. The <em>T</em><sub>c</sub> for all samples exhibited a sharp drop, indicating a single superconducting transition in (Y,Er)123 with a <em>T</em><sub>c-onset</sub> around 92 K. Microstructural analysis revealed a reduction size with homogenous distribution in (Y,Er)211 non-superconducting phase particles within the (Y,Er)123 matrixes, leading to enhancement of superconducting performance. The addition of Erbium improved <em>J</em><sub>c</sub> values up to 79 kA/cm<sup>2</sup> in self-field and the maximum trapped field value was reached up to 0.3 T at 77 K. Thus, the presence of Er could provide a potential advantage in fabricating high-performance superconducting bulk materials within mixed rare earth systems.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417152"},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143687219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band engineering in ZnO/MoO3 heterojunction photodetector for improved photoelectrical response toward highly rated ultraviolet radiation sensing

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417155

Olubusayo F. Oladejo , Ghadah M. Al-Senani , Olamide A. Akintayo , Muizat G. Uthman , Salhah D. Al-Qahtani , Gbadebo I. Olatona , Saheed A. Adewinbi

{"title":"Band engineering in ZnO/MoO3 heterojunction photodetector for improved photoelectrical response toward highly rated ultraviolet radiation sensing","authors":"Olubusayo F. Oladejo , Ghadah M. Al-Senani , Olamide A. Akintayo , Muizat G. Uthman , Salhah D. Al-Qahtani , Gbadebo I. Olatona , Saheed A. Adewinbi","doi":"10.1016/j.physb.2025.417155","DOIUrl":"10.1016/j.physb.2025.417155","url":null,"abstract":"<div><div>In this study, heterojunction UV radiation photodetector (PD) based on ZnO nanolaminate and orthorhombic nanostructured MoO<sub>3</sub> thin film, was fabricated using a cost-effective electrochemical deposition process. Some surface structural studies unveil the deposited materials' characteristics suitable for effective photoabsorption and photoelectric charge carriers' transport. The fabricated PD demonstrated excellent UV photo-response properties, thanks to the intrinsic UV absorption characteristics of ZnO nanolaminate and enhanced charge carriers’ separation and transport properties brought through its synergistic band interaction with the MoO<sub>3</sub> underlain. The UV PD device with MoO<sub>3</sub> underlain demonstrated optimal performance with a high photocurrent compared to its counterpart (without MoO<sub>3</sub>). It exhibited high UV radiation responsivity and detectivity values of 0.7 A/W and 5.3 x 10<sup>10</sup> Jones, respectively under weak irradiation of UV (λ = 365 nm) at 0.5 mW/cm<sup>2</sup> power density. The result demonstrated the potential of ZnO/MoO<sub>3</sub> heterojunction as an excellent recipe for high-performance UV radiation detection.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417155"},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143686754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of stable direct bandgap inorganic double halide perovskites A2MM'X6 for photovoltaic and photocatalysis applications

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-17 DOI: 10.1016/j.physb.2025.417147

Hadeer H. AbdElAziz , Laila Saad , M.H. Khedr , Mohamed Taha

{"title":"Evaluation of stable direct bandgap inorganic double halide perovskites A2MM'X6 for photovoltaic and photocatalysis applications","authors":"Hadeer H. AbdElAziz , Laila Saad , M.H. Khedr , Mohamed Taha","doi":"10.1016/j.physb.2025.417147","DOIUrl":"10.1016/j.physb.2025.417147","url":null,"abstract":"<div><div>This study employed density functional theory (DFT) calculations to investigate the structural, mechanical and optoelectronic properties of the double halide perovskites, A<sub>2</sub>MM'X<sub>6</sub> (A = K, Rb, Cs; M = Ag, Cu; M' = Al, Ga, In; and X = Cl, Br). The stability of twenty-six A<sub>2</sub>MM'X<sub>6</sub> was evaluated using the tolerance factor. We then performed a DFT study on the seventeen phase stable materials to predict their thermodynamic stability, mechanical and electronic properties. The phonon dispersion, decomposition energy and effective masses of the materials are computed. The bandgaps of these materials range from 1.35 to 3.66 eV. The band edge positions and optical properties (absorption coefficient, dielectric function, refractive index, reflectivity and loss function) were calculated. Two of these materials are suitable for single junction solar cells applications, three are suitable for tandem solar cells and nine of them materials may act as photocatalysts for water splitting and CO<sub>2</sub> reduction based on their electronic and optical results. Cs<sub>2</sub>AgAlBr<sub>6</sub> and Cs<sub>2</sub>AgInBr<sub>6</sub> materials are the most stable and appropriate for the application in both photovoltaic and photocatalysis applications.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417147"},"PeriodicalIF":2.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143686798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum to ‘Magneto-optical conductivity in the type-I and type-II phases of Weyl/multi-Weyl semimetals’ [Physica B 656 (2023) 414765]

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-12 DOI: 10.1016/j.physb.2025.417093

Shivam Yadav, Sajid Sekh, Ipsita Mandal

引用次数: 0

The high-pressure phase transition in tin diselenide discovered by Raman scattering and X-ray diffraction analysis

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-12 DOI: 10.1016/j.physb.2025.417139

Fangfang Chen , Liuxia Sun , Hua Zhao , Pan Liang , Kai Jiang

{"title":"The high-pressure phase transition in tin diselenide discovered by Raman scattering and X-ray diffraction analysis","authors":"Fangfang Chen , Liuxia Sun , Hua Zhao , Pan Liang , Kai Jiang","doi":"10.1016/j.physb.2025.417139","DOIUrl":"10.1016/j.physb.2025.417139","url":null,"abstract":"<div><div>The two-dimensional (2D) semiconductor tin diselenide (SnSe<sub>2</sub>) has recently gained great attention in electronic and optical attributed to its unique physical properties. Here, we present a pressure-dependent study on the phase transformation behavior of the SnSe<sub>2</sub> crystal range from ambient pressure up to 34.81 GPa. In order to study the phase transition behavior of SnSe<sub>2</sub>, we employed <em>In situ,</em> high-pressure Raman spectroscopy and X-ray diffraction (XRD). The obtained single-crystal XRD data reveal that at 34.81 GPa, the lengths of the <em>a</em> and <em>c</em> axes are reduced by approximately 9.2 % and 21.7 %, respectively, compared to their values at 0 GPa. This indicates that the lattice parameter <em>a</em> is less affected by pressure compared to the lattice constant <em>c</em>. At a pressure of up to 8 GPa, the low-frequency vibrational mode (approximately 119 cm<sup>−1</sup>) becomes significantly weaker and then undetectable. Surprisingly, a Raman band gradually emerges at around 80 cm<sup>−1</sup>. Additionally, the high-frequency vibrational mode gradually splits into two modes, and the Raman signal weakens and broadens. These phenomena suggest a decrease in the crystalline symmetry of SnSe<sub>2</sub> and the occurrence of semiconductor-to-metal transitions from 8 GPa onward. Our findings offer a new avenue for further investigation into the complex phase transition mechanisms in transition metal dichalcogenides-related materials.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417139"},"PeriodicalIF":2.8,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A first principles study on spin dependent electronic and optical characteristics of NH2 adsorbed zinc oxide-based nanomaterials 关于吸附 NH2 的氧化锌基纳米材料自旋相关电子和光学特性的第一性原理研究

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-12 DOI: 10.1016/j.physb.2025.417142

Serkan Caliskan, Samina Masood

引用次数: 0

Regulation of strong coupling between multiple BICs and excitons in bulk WS2 metasurfaces 调控块状 WS2 超表面中多个 BIC 与激子之间的强耦合

IF 2.8 3区物理与天体物理

Physica B-condensed Matter Pub Date : 2025-03-12 DOI: 10.1016/j.physb.2025.417141

Jianghao Chen, Suxia Xie, Miaowenhao Sun, Zhaoyou Zeng, Siyi Sun, Xin Guan

{"title":"Regulation of strong coupling between multiple BICs and excitons in bulk WS2 metasurfaces","authors":"Jianghao Chen, Suxia Xie, Miaowenhao Sun, Zhaoyou Zeng, Siyi Sun, Xin Guan","doi":"10.1016/j.physb.2025.417141","DOIUrl":"10.1016/j.physb.2025.417141","url":null,"abstract":"<div><div>Bulk transition metal dichalcogenides have become staples in nanophotonics, condensed matter physics, and quantum optics due to their elevated refractive index and the reliable exciton response they maintain at room temperature. In our research, we harness block WS<sub>2</sub> to engineer an ultra-thin nanodisk metasurface capable of supporting both magnetic dipole Q-BIC (quasi-bound in the continuum) resonance and magnetic ring dipole Q-BIC resonance. Remarkably, these Q-BIC resonances are capable of self-hybridizing with excitons, facilitating intense light-matter interactions within the structure, independent of an external cavity. The self-hybridized exciton polaritons, a result of the strong coupling between Q-BIC and excitons, display characteristic anti-crossing behavior, with Rabi splittings reaching up to 161 meV and 165 meV, respectively. Building upon these findings, we utilize a Hamiltonian model that accounts for residual excitons, thereby substantiating the strong coupling phenomenon. Our discoveries hold significant promise for the manipulation of excitonic polaritons at room temperature, potentially leading to the development of large-scale, cost-effective integrated polaron devices that operate under room temperature.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"706 ","pages":"Article 417141"},"PeriodicalIF":2.8,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0