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2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)最新文献

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Optimized design of lateral PIN photodiodes regarding responsivity and SNR as a function of operating temperature 基于响应度和信噪比随工作温度变化的横向PIN光电二极管优化设计
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016170
C. Novo, R. Zapata, Joao Batista, Ricardo G. Stolf, R. Giacomini
{"title":"Optimized design of lateral PIN photodiodes regarding responsivity and SNR as a function of operating temperature","authors":"C. Novo, R. Zapata, Joao Batista, Ricardo G. Stolf, R. Giacomini","doi":"10.1109/ICCDCS.2014.7016170","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016170","url":null,"abstract":"This paper addresses a simultaneous analysis of the intrinsic length (L1) and the operating temperature, which are, respectively, a preeminent design variable and a fundamental boundary condition for lateral PIN photodiodes. The analysis is focused in the responsivity and signal-to-noise ratio (SNR), in order to investigate the best configuration for a given technology. CMOS PIN photodiodes with different characteristics were designed and fabricated Experimental measurements were performed and the optical devices showed reasonable performance in the visible spectrum. The best responsivity (37%) was achieved for L1 = 11 μm, at room temperature and light wavelength of 650 nm. The best signal-to-noise ratio was found to be 6000 for red and 700 for blue lights, both at T = 200 K.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115726825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wide-band CIC compensators based on amplitude transformation 基于幅度变换的宽带CIC补偿器
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016157
Miriam Guadalupe Cruz Jiménez, D. E. Troncoso Romero, G. Jovanovic Dolecek, Massimiliano Laddomadar
{"title":"Wide-band CIC compensators based on amplitude transformation","authors":"Miriam Guadalupe Cruz Jiménez, D. E. Troncoso Romero, G. Jovanovic Dolecek, Massimiliano Laddomadar","doi":"10.1109/ICCDCS.2014.7016157","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016157","url":null,"abstract":"This paper presents an efficient design of low-complexity wide-band compensators to improve the passband characteristic of Cascaded Integrator Comb (CIC) filters. The proposed compensators are designed using the amplitude transformation method recently presented in a companion paper. This work also provides a simple formula to obtain the coefficients of the compensator. Design examples and comparisons were addressed to show that the proposed compensation filters have better frequency characteristics compared to other wide-band compensators recently presented in the literature.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116231261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 0.75V continuous-time sigma-delta analog-to-digital converter in CMOS technology CMOS技术中的0.75V连续时间σ - δ模数转换器
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016164
A. Essawy, A. Ismail, M. Dessouky
{"title":"A 0.75V continuous-time sigma-delta analog-to-digital converter in CMOS technology","authors":"A. Essawy, A. Ismail, M. Dessouky","doi":"10.1109/ICCDCS.2014.7016164","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016164","url":null,"abstract":"In this work, a low-voltage implementation for continuous-time ΣΔ analog-to-digital converters is proposed. The low-voltage implementation technique is based on implementing the sigma delta integrators using CMOS inverters. The proposed technique is applied to a third-order single loop modulator. The first integrator in the loop filter is an active RC integrator, while the remaining integrators are Gm-C based. A 74 dB SNDR is achieved for a signal bandwidth of 41 kHz and sampling frequency of 100 MHz, while consuming 1 mA from 0.75 V supply, in 65 nm CMOS technology.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114766671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A reversible channel current effect in MOSFETs mosfet中的可逆通道电流效应
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016173
O. Huerta-G., E. Gutiérrez-D.
{"title":"A reversible channel current effect in MOSFETs","authors":"O. Huerta-G., E. Gutiérrez-D.","doi":"10.1109/ICCDCS.2014.7016173","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016173","url":null,"abstract":"A set of experimental results showing a source-to-drain and drain-to-source reversible channel current in a 28 nm nMOSFET is introduced. By numerical modeling we found out that the reversible channel current is understood bY incorporating the Density Gradient (DG) theory, which explains the reversible current by a change of sign in the gradient of the generalized quantum potential along the channel. The effect is only observable at low drain voltages, where a slight initial internal channel conductance (at no bias) unbalance causes the channel current to reverse when the gate voltage sweeps from low to high values.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127600629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a behavioral model of the single-electron transistor for hybrid circuit simulation 用于混合电路仿真的单电子晶体管行为模型的建立
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016179
F. Castro-Gonzalez, A. Sarmiento-Reyes
{"title":"Development of a behavioral model of the single-electron transistor for hybrid circuit simulation","authors":"F. Castro-Gonzalez, A. Sarmiento-Reyes","doi":"10.1109/ICCDCS.2014.7016179","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016179","url":null,"abstract":"The heterogeneous integration between CMOS devices and different emerging nanotechnologies such as the single-electronics tries to take the best of each technology. On one hand, the advantages of MOSFET devices are high speed and high current and the relative maturity of fabrication technology. On other hand, single-electronic technologies have the potencial to create high-density devices and have ultralow power consumption. The circuits composed by MOSFET and single-electronic devices are called hybrid circuits. The most representative structure of the single-electronic devices is the Single-Electron Transistor (SET), it is a three terminal architecture. This work develops a behavioral model that includes the gate capacitance parameter (CG), that is one of the most important in the SET. The model has been developed to be used in a SPICE-like simulator as a user-defined model. Comparing the simulation results between our model and device-level simulator shows a high degree of agreement. The authors offer an analysis of the optimization for the biasing over hybrid and only-SET structures, as well as a parameter variations on the CG for the SET.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114702898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Floating body effect on n-channel bulk FinFETs for memory application 存储用n通道体finfet的浮体效应
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016147
M. Andrade, L. Almeida, J. Martino, M. Aoulaiche, E. Simoen, C. Claeys
{"title":"Floating body effect on n-channel bulk FinFETs for memory application","authors":"M. Andrade, L. Almeida, J. Martino, M. Aoulaiche, E. Simoen, C. Claeys","doi":"10.1109/ICCDCS.2014.7016147","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016147","url":null,"abstract":"In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114997290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An approach to select a band-pass window on the frequency response of a microwave photonic filter 微波光子滤波器频率响应带通窗口的选择方法
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016167
P. Hernández-Nava, I. Zaldívar-Huerta, E. Cruz-Pérez, J. Olvera-Cervantes, A. García-Juárez, J. Rodríguez-Asomoza
{"title":"An approach to select a band-pass window on the frequency response of a microwave photonic filter","authors":"P. Hernández-Nava, I. Zaldívar-Huerta, E. Cruz-Pérez, J. Olvera-Cervantes, A. García-Juárez, J. Rodríguez-Asomoza","doi":"10.1109/ICCDCS.2014.7016167","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016167","url":null,"abstract":"This work describes a microwave photonic filter (MPF) that exhibits five band-pass windows at multiples of 2.0GHz into the frequency range of 0.1-12GHz. A novel electrical microwave band-pass filter (BPF) is designed and fabricated to operate at 4.0GHz. The fabricated BPF exhibits a compact size, low losses, high selectivity and high spurious frequency; these characteristics permit its inclusion into the MPF structure allowing a substantial improvement of the frequency response of the MPF. Experimentally it is demonstrated that the band-pass window selected by the use of the BPF is used as an electrical carrier to transmit an analogue TV-signal over an optical link of 28.25Km.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126289205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unity gain frequency on FinFET and TFET devices FinFET和TFET器件的单位增益频率
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016152
P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys
{"title":"Unity gain frequency on FinFET and TFET devices","authors":"P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys","doi":"10.1109/ICCDCS.2014.7016152","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016152","url":null,"abstract":"In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129433662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Proteus: An open source dynamically reconfigurable system-on-chip with applications to digital signal processing Proteus:一个开源的动态可重构系统芯片，应用于数字信号处理
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016176
Andres Jacoby, D. Llamocca, R. Jordan, G. A. Vera
{"title":"Proteus: An open source dynamically reconfigurable system-on-chip with applications to digital signal processing","authors":"Andres Jacoby, D. Llamocca, R. Jordan, G. A. Vera","doi":"10.1109/ICCDCS.2014.7016176","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016176","url":null,"abstract":"Digital systems capable of altering their hardware configuration on the fly are labeled dynamically reconfigurable. Proteus is an OpenRISC-based computer optimized for Xilinx's FPGAs that can dynamically reconfigure itself. Proteus was conceived as a platform to facilitate the study of reconfigurable computing architectures by providing a turn-key solution that is openly available. This paper describes Proteus's architecture, its application to digital signal processing, its capabilities and ongoing research at several institutions.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"110 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128733788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications 低噪声硅基单片跨阻放大器，适用于10gbps, 40gbps和100gbps应用
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI: 10.1109/ICCDCS.2014.7016156
A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart
{"title":"Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications","authors":"A. F. Ponchet, E. M. Bastida, R. Panepucci, J. Swart","doi":"10.1109/ICCDCS.2014.7016156","DOIUrl":"https://doi.org/10.1109/ICCDCS.2014.7016156","url":null,"abstract":"Design information is given for developing microwave and millimeter-wave silicon based low noise broadband monolithic transimpedance amplifiers. The required layout optimizations for SiGe HBTs and CMOS devices are described and the foundry selection criteria we employed are reported. An efficient high frequency passive devices implementation and high frequency connectivity solutions with external circuitry are also considered. The full design of two CMOS monolithic circuits and three HBT ultra wide band MMICs circuits under fabrication is then described.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116452146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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