Optimized design of lateral PIN photodiodes regarding responsivity and SNR as a function of operating temperature

C. Novo, R. Zapata, Joao Batista, Ricardo G. Stolf, R. Giacomini
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引用次数: 2

Abstract

This paper addresses a simultaneous analysis of the intrinsic length (L1) and the operating temperature, which are, respectively, a preeminent design variable and a fundamental boundary condition for lateral PIN photodiodes. The analysis is focused in the responsivity and signal-to-noise ratio (SNR), in order to investigate the best configuration for a given technology. CMOS PIN photodiodes with different characteristics were designed and fabricated Experimental measurements were performed and the optical devices showed reasonable performance in the visible spectrum. The best responsivity (37%) was achieved for L1 = 11 μm, at room temperature and light wavelength of 650 nm. The best signal-to-noise ratio was found to be 6000 for red and 700 for blue lights, both at T = 200 K.
基于响应度和信噪比随工作温度变化的横向PIN光电二极管优化设计
本文同时分析了固有长度(L1)和工作温度,它们分别是横向PIN光电二极管的卓越设计变量和基本边界条件。分析的重点是响应性和信噪比(SNR),以便研究给定技术的最佳配置。设计并制作了不同特性的CMOS PIN光电二极管,并进行了实验测量,结果表明该器件在可见光谱范围内具有合理的性能。当L1 = 11 μm、室温、波长为650 nm时,器件的响应率为37%。在T = 200k时,最佳信噪比分别为6000和700。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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