Unity gain frequency on FinFET and TFET devices

P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys
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引用次数: 3

Abstract

In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.
FinFET和TFET器件的单位增益频率
在这项工作中,通过与众所周知的pFinFET性能的直接比较,从模拟应用的角度对pTFET进行评估。该评价主要集中在固有电压增益和单位增益频率上。尽管finfet的总电容比ptfet差,但跨导行为起着主要作用,并导致pFinFET器件的单位增益频率更高。然而,如果应用不需要高频,由于巨大的固有电压增益增强,tfet是一个很好的候选。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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