P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys
{"title":"FinFET和TFET器件的单位增益频率","authors":"P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys","doi":"10.1109/ICCDCS.2014.7016152","DOIUrl":null,"url":null,"abstract":"In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.","PeriodicalId":200044,"journal":{"name":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Unity gain frequency on FinFET and TFET devices\",\"authors\":\"P. Agopian, J. Martino, A. Vandooren, R. Rooyackers, E. Simoen, A. Thean, C. Claeys\",\"doi\":\"10.1109/ICCDCS.2014.7016152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.\",\"PeriodicalId\":200044,\"journal\":{\"name\":\"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2014.7016152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2014.7016152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain frequency for pFinFET devices. However, if the high frequency is not necessary for the application, TFETs are a good candidate due to the huge intrinsic voltage gain enhancement.