A reversible channel current effect in MOSFETs

Abstract

A set of experimental results showing a source-to-drain and drain-to-source reversible channel current in a 28 nm nMOSFET is introduced. By numerical modeling we found out that the reversible channel current is understood bY incorporating the Density Gradient (DG) theory, which explains the reversible current by a change of sign in the gradient of the generalized quantum potential along the channel. The effect is only observable at low drain voltages, where a slight initial internal channel conductance (at no bias) unbalance causes the channel current to reverse when the gate voltage sweeps from low to high values.