Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)最新文献

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On improving at no cost the quality of products built with SRAM-based FPGAs 关于用基于sram的fpga免费提高产品质量
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643603
R. Leveugle, Mohamed Ben Jrad
{"title":"On improving at no cost the quality of products built with SRAM-based FPGAs","authors":"R. Leveugle, Mohamed Ben Jrad","doi":"10.1109/ASQED.2013.6643603","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643603","url":null,"abstract":"Product or design quality encompasses many aspects. One of them is the robustness with respect to perturbations. This robustness depends on the implementation technology, but can also be improved at design time. This paper is focused on designs implemented in SRAM-based FPGAs that are sensitive to soft errors in the configuration memory. An approach is proposed to increase the dependability with respect to configuration errors, at no cost, by selectively hardening parts of the design. The selection of locally duplicated functions is made so that the protections take advantage of FPGA resources that would not be used by the implemented design. An automated design flow is presented for Xilinx Virtex V devices and fault injection results show that the design dependability may be noticeably enhanced. As an example, more than 40% of the LUTs used to implement a Leon3 Sparc v8 processor can be protected against multiple configuration errors with less than 20% resource overheads at the block level. The final system-level overhead may in many cases be null for a given product, either due to the discrete sizes of available FPGAs or to a different repartition of resource budget between system blocks.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129940982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimization of thermal vias for thermal resistance in FR-4 PCBs FR-4 pcb热阻热通孔的优化
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643611
Alex Lee Yuen Beng, Gan Sik Hong, M. Devarajan
{"title":"Optimization of thermal vias for thermal resistance in FR-4 PCBs","authors":"Alex Lee Yuen Beng, Gan Sik Hong, M. Devarajan","doi":"10.1109/ASQED.2013.6643611","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643611","url":null,"abstract":"A detailed thermal simulation of the performance of FR-4 PCBs having various \"via configuration\" is made in this study. The results indicate the thermal resistance from the simulation is significantly affected by compact thermal via configurations. Thermal resistance can be improved by increasing via number and also with copper filled via. For further explanation of the significant drop of thermal resistance at PCBs with thermal via, the detailed thermal resistance distribution at the thermal module are further examined. The significant drop in thermal resistance mainly occur in FR-4 PCBs with the help of thermal via. However, there is observed a maximum number of via which contribute to optimized thermal resistance across the PCB.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Variability aware performance evaluation of low power SRAM cell 低功耗SRAM单元可变性感知性能评估
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643584
H. Dsilva, J. Pinto, Arzan Elchidana, S. Mande
{"title":"Variability aware performance evaluation of low power SRAM cell","authors":"H. Dsilva, J. Pinto, Arzan Elchidana, S. Mande","doi":"10.1109/ASQED.2013.6643584","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643584","url":null,"abstract":"Till today CMOS scaling is considered as the best option to achieve higher density, high performance and low power integrated circuits. However, scaling of conventional planar MOSFET in the sub-45nm regime leads to many undesirable short channel effects. FinFET is considered as the suitable candidate for the replacement of conventional planar MOSFETs. In this work, suitability of FinFETs for replacement of planar bulk technology in sub-20nm regime has been verified using Predictive Technology Models. For this purpose, the performance of the FinFET based SRAM cell is compared with conventional planar Bulk based SRAM cell. Moreover, robustness of FinFET based SRAM cell against process, temperature and power supply variations is evaluated and compared with conventional planar based SRAM cell. Our simulation results confirms the suitability of FinFETs for the replacement of conventional planar CMOS technology.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129535559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study on silicon window polarity of partial-SOI LDMOS power devices 部分soi LDMOS功率器件硅窗极性研究
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643600
Yue Hu, Hao Wang, Cheng Wang, Jin He, Xiaoan Zhu, Sheng Chang, Qijun Huang, D. Wang, Qingxing He, Caixia Du, Shengju Zhong
{"title":"Study on silicon window polarity of partial-SOI LDMOS power devices","authors":"Yue Hu, Hao Wang, Cheng Wang, Jin He, Xiaoan Zhu, Sheng Chang, Qijun Huang, D. Wang, Qingxing He, Caixia Du, Shengju Zhong","doi":"10.1109/ASQED.2013.6643600","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643600","url":null,"abstract":"The Effect of silicon window polarity on partial-SOI (partial silicon-on-insulator, PSOI) LDMOS power devices under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analyzed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (Ron). In partial-SOI LDMOSFETs, the P-type silicon window is considered as a part of the substrate, while the N-type silicon window falls into the drift region, which affects the high-voltage operation of devices. The two-dimensional (2-D) simulation results show that the breakdown voltage of PSOI LDMOSFET with P-type window is higher than that of PSOI LDMOSFET with N-type window, while the on-resistance of PSOI LDMOSFET with P-type window is lower than that of PSOI LDMOSFET with N-type window.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122943093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Path resistance reduction through automated Multi-Level Metal and Via insertion for IC layout design 通过自动多级金属和通孔插入来降低路径电阻,用于IC布局设计
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643597
Thai Lee Lo, Gregory Sylvester Emmanuel, Thomas Fong Chee Goh, Chun Keong Lee, Joon Heong Ong, Yng Chuk Tam, Jonathan Yoong Seang Ong, Hui Peng Ong
{"title":"Path resistance reduction through automated Multi-Level Metal and Via insertion for IC layout design","authors":"Thai Lee Lo, Gregory Sylvester Emmanuel, Thomas Fong Chee Goh, Chun Keong Lee, Joon Heong Ong, Yng Chuk Tam, Jonathan Yoong Seang Ong, Hui Peng Ong","doi":"10.1109/ASQED.2013.6643597","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643597","url":null,"abstract":"Current EDA market has plenty of DFM (Design for Manufacturing) solutions on via doubling for VLSI design which enhances single-level metal (hierarchy) interconnections. A new conceptual approach, Multi-Level Metal and Via (MLMV) is proposed to extend the capability to insert metals and vias across multiple hierarchies to lower effective resistance. The objective is to improve signal integrity by reducing resistance across metal paths for individual signals, inclusive of supplies across the full chip. MLMV also takes into consideration the critical signals integrity of the design. The tool ensures no metal insertion is too close to critical signals, to prevent potential noise in the design. The results discussed in this paper show a significant improvement in terms of reducing the effective resistance of experimental test case signal path up to 90% in comparing to the conventional via filling solution. With these significant results, it can be concluded that MLMV is able to populate the metal and via effectively and minimizing resistance in the design.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129889431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of phosphor packaging configurations on the optical performance of Chip on Board phosphor converted Warm White LEDs 荧光粉封装结构对片上荧光粉转换暖白光led光学性能的影响
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2013-08-01 DOI: 10.1109/ASQED.2013.6643608
P. H. Yuen, Hwang Hsien Shiung, M. Devarajan
{"title":"Influence of phosphor packaging configurations on the optical performance of Chip on Board phosphor converted Warm White LEDs","authors":"P. H. Yuen, Hwang Hsien Shiung, M. Devarajan","doi":"10.1109/ASQED.2013.6643608","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643608","url":null,"abstract":"The optical properties of high power Warm-White Light Emitting Diodes (WW-LEDs) in Chip-on-Board (COB) package of Dam-and-Fill encapsulation with three different phosphor packaging configurations were investigated in this paper. The phosphor configurations studied were remote phosphor, double phosphor layers and normal phosphor configuration. Analysis of experimental data shows that LED samples in COB package with normal phosphor configuration had the highest efficiency compared to the other two phosphor configurations, differing from usual results obtained in other comparison studies of phosphor configurations in LED packages. This investigation also shows that LED samples with remote phosphor configuration has the highest relative intensity at red-yellow emission region, while LED samples with normal phosphor configuration has the highest relative intensity at blue emission region.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115173694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simultaneous hotspot temperature and supply noise reductions using thermal TSVs and decoupling capacitors 使用热tsv和去耦电容器同时降低热点温度和电源噪声
Fifth Asia Symposium on Quality Electronic Design (ASQED 2013) Pub Date : 2011-08-29 DOI: 10.1109/ASQED.2013.6643595
Yan-Wun Wang, Pao-Jen Huang, Tai-Chen Chen, C. Liu
{"title":"Simultaneous hotspot temperature and supply noise reductions using thermal TSVs and decoupling capacitors","authors":"Yan-Wun Wang, Pao-Jen Huang, Tai-Chen Chen, C. Liu","doi":"10.1109/ASQED.2013.6643595","DOIUrl":"https://doi.org/10.1109/ASQED.2013.6643595","url":null,"abstract":"In 3D IC architectures, the thermal and power noise problems affect the performance of the whole chip. In this paper, we present a method to solve these two problems by simultaneously adding thermal TSVs (T-TSV) for the thermal issue and decoupling capacitors (decap) for the power noise issue. Since the unit-area capacitance of a T-TSV at the room temperature is equivalent to that of a decap, and the unit-area capacitance of a T-TSV is arisen with increasing temperature, T-TSVs have the abilities of dissipating thermal and reducing power noise. We formulate these two abilities into a linear programming. Without enlarging the floorplan area, the proposed method can alleviate the temperature and voltage drop using linear programming under the given target temperature and the threshold of the voltage drop. Experimental results show that the maximum temperature and average temperature can be reduced 48% and 29%, respectively. The voltage drop can be reduced 273% and all voltage drops are lower than 0.3 voltages.","PeriodicalId":198881,"journal":{"name":"Fifth Asia Symposium on Quality Electronic Design (ASQED 2013)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133625535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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