Simultaneous hotspot temperature and supply noise reductions using thermal TSVs and decoupling capacitors

Yan-Wun Wang, Pao-Jen Huang, Tai-Chen Chen, C. Liu
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Abstract

In 3D IC architectures, the thermal and power noise problems affect the performance of the whole chip. In this paper, we present a method to solve these two problems by simultaneously adding thermal TSVs (T-TSV) for the thermal issue and decoupling capacitors (decap) for the power noise issue. Since the unit-area capacitance of a T-TSV at the room temperature is equivalent to that of a decap, and the unit-area capacitance of a T-TSV is arisen with increasing temperature, T-TSVs have the abilities of dissipating thermal and reducing power noise. We formulate these two abilities into a linear programming. Without enlarging the floorplan area, the proposed method can alleviate the temperature and voltage drop using linear programming under the given target temperature and the threshold of the voltage drop. Experimental results show that the maximum temperature and average temperature can be reduced 48% and 29%, respectively. The voltage drop can be reduced 273% and all voltage drops are lower than 0.3 voltages.
使用热tsv和去耦电容器同时降低热点温度和电源噪声
在3D集成电路架构中,热噪声和功率噪声问题会影响整个芯片的性能。在本文中,我们提出了一种解决这两个问题的方法,即同时增加热tsv (T-TSV)来解决热问题,同时增加去耦电容器(decap)来解决功率噪声问题。由于T-TSV在室温下的单位面积电容与电容等效,且单位面积电容随温度升高而增大,因此T-TSV具有散热和降低功率噪声的能力。我们将这两种能力表述成线性规划。该方法在给定目标温度和电压降阈值的情况下,采用线性规划的方法,在不扩大平面面积的前提下,缓解了温度和电压降的影响。实验结果表明,最高温度和平均温度可分别降低48%和29%。电压降可降低273%,且所有电压降均小于0.3电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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