2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

{"title":"Reliability of LED-based Systems","authors":"W. Driel, B. Jacobs, P. Watté, X. Zhao","doi":"10.1109/EuroSimE52062.2021.9410861","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410861","url":null,"abstract":"Reliability is an essential scientific and technological domain intrinsically linked with system integration. Nowadays, semiconductor industries are confronted with ever-increasing design complexity, dramatically decreasing design margins, increasing chances for and consequences of failures, shortening of product development and qualification time, and increasing difficulties to meet quality, robustness, and reliability requirements. The scientific successes of many micro/nano-related technology developments cannot lead to business success with-out innovation and breakthroughs in the way that we address reliability through the whole value chain. The aim of reliability is to predict, optimize and design upfront the reliability of micro/nanoelectronics and systems, an area denoted as ‘Design for Reliability (DfR)’. While virtual schemes based on numerical simulation are widely used for functional design, they lack a systematic approach when used for reliability assessments. Besides this, lifetime predictions are still based on old standards assuming a constant failure rate behavior. In this paper, we will present the reliability and failures found in solid-state lighting systems. It includes both degradation and catastrophic failure modes from observation towards a full description of its mechanism obtained by extensive use of acceleration tests using knowledge-based qualification methods.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122261674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Failure of MEMS Microphones During Impact Tests: the Role of Anchor Imposed Motion","authors":"A. Ghisi, D. Faraci, S. Adorno, A. Corigliano","doi":"10.1109/EuroSimE52062.2021.9410884","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410884","url":null,"abstract":"The causes of possible failures of MEMS microphones during guided free fall tests are investigated through top-down, multiscale finite element numerical simulations. Focusing at the micro-scale, the role of the travelling stress waves in the solid, transferred as relative displacement imposed motion histories at the microphone anchors, is clarified. The system including the thin silicon membrane (i.e. the microphone), a holed backplate and the substrate is modelled and studied by including the (different) motions at every support combined with the air over-pressure on the membrane, as captured by fluid dynamics analyses at the higher scale. We show that several failure mechanisms can alternatively occur, involving the membrane or (more likely) the backplate, depending on the phase balance between the two loading history signals. The numerical results help to get insight into the experimental behaviour during guided free fall tests, which instead would appear random and evidence only a rupture/not rupture output.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126036681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Ball Size and Geometry on the Reliability and RF Performance of mmWave System-in-Package: A Simulation Approach","authors":"S. Dilek, I. Ndip, Marco Rossi, C. Tschoban, S. Kuttler, O. Wittler, K. Lang, Christian Goetze, Daniel Berger, M. Wieland, M. Schneider-Ramelow","doi":"10.1109/EuroSimE52062.2021.9410849","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410849","url":null,"abstract":"Solder ball reliability is a long-discussed topic in microelectronic packaging. With new package types needed for mmWave applications a trade-off between reliability and RF performance may arise, when the solder ball geometry has to be selected for specific package assemblies. In this work, the lifetime for different solder ball geometries is investigated within a numerical simulation workflow, by means of a sensitivity analysis in which the ball diameter, pad sizes and stand-off distance are varied. Next to lifetime estimations, 3D full-wave simulations have been applied to analyze the RF performance of the structures under investigation at 77-79 GHz (E-band) center frequencies relevant for automotive radar applications. Finally, the trade-off between RF performance and reliability is illustrated and quantified.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116796662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the Way to understand the Warpage in 8” Taiko Semiconductor Wafers for Power Electronics Applications (Si and SiC)","authors":"V. Vinciguerra, Antonio Landi","doi":"10.1109/EuroSimE52062.2021.9410844","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410844","url":null,"abstract":"A linear correlation between the curvature provided by the Stoney equation, considered in an “extended” linear regime, and the arithmetic mean of the main curvatures of a bifurcated plain wafer, has been demonstrated and considered as valid also for the case of a taiko wafer. An extension of the Stoney formula for the case of a back side metallized 8” silicon taiko wafer has been developed, within the frame of the theory of elasticity. It results that there is a good correlation between the calculated curvatures and warpage, determined by the stress released by a given back side metallization (BSM) and the corresponding experimental quantities of the same thick metal layers deposited on an 8” silicon taiko wafer. This development suggests the possibility to extend this approach to the case of 8” taiko wafers based on a wide band gap semiconductor such as silicon carbide (SiC).","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130335660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability Analysis of a RF Product with Improved Quality for the Prediction of Failure Probabilities","authors":"P. Leduc, Peter Krenz, R. Niemeier","doi":"10.1109/EuroSimE52062.2021.9410860","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410860","url":null,"abstract":"The simulation-based analyses of production yield losses are still in the early stage. With the possibility to use input parameters with a stochastic distribution, taking in account the manufacturing tolerances, and with the ability to calculate failure probabilities these analyses become nowadays possible.The approach shown here for a RF product can give useful insights for the reduction of the production yield loss, ideally already in the early design stage of the manufacturing process itself.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123370026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Failure Mechanism Detection Algorithm with MOSFET Body Diode","authors":"M. E. Khatib, S. Reitz, J. Warmuth","doi":"10.1109/EuroSimE52062.2021.9410839","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410839","url":null,"abstract":"Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of artificial intelligence and hardware reliability. To ensure safe functionality, the reliability of the electronic components plays an essential role and must be taken into consideration. One aspect of studies that analyze the electronics reliability is the observation of the system’s thermal impedance and deriving a correlation between the failure mechanisms and thermal impedance behavior. In recent times, several new approaches have been suggested to improve the electronics reliability. Many studies were carried out to determine the effect of solder voiding on the thermal impedance of chip-level packages. In this paper, a defect diagnosis and physical damage detection method for electronic packaging are studied by measuring the thermal impedance through the body diode of the device under test (DUT). The detection method uses MOSFET body diode temperature measurements to investigate different failure mechanisms at different locations in the electronic packaging system.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125724728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of the stress state in QFN package during four bending experiment utilizing piezoresistive stress sensor","authors":"Daniel Riegel, P. Gromala, S. Rzepka","doi":"10.1109/EuroSimE52062.2021.9410886","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410886","url":null,"abstract":"This paper reports a comprehensive study on four point bending experiment and its correlation with numerical simulation. As test vehicle we have used a board with 16 QFN components soldered on the top and bottom side of the PCB. Each QFN had two piezoresistive stress sensors. Each sensor has 60 stress sensing cells, in total 120 per QFN. In our study we have investigated the stress state in the QFN utilizing piezoresisitve stress sensor and compare it with numerical model. Stress analysis showed that components very close to the edge are exposed to the slightly higher stress (20%) as the other components placed in the center of the PCB. In case of numerical simulation, we have found that the most important on accuracy is the exact geometry.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132302748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studies on Thermo-Mechanical Reliability of High Performance Vehicle Computers Based on a Mock-up System","authors":"R. Dudek, R. Döring, S. Rzepka, P. Gromala, Jens Schindele, B. Vandevelde","doi":"10.1109/EuroSimE52062.2021.9410854","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410854","url":null,"abstract":"The use of electronics for purpose of autonomous driving requires high performance vehicle computer (HPVC) systems usable in harsh environments. A variety of challenging issues have to be considered from different perspectives. The paper focuses on the perspective of reliability and functional safety. To physically simulate and to analyze the thermal and the thermo-mechanical behaviors of the actual processors in different operation modes, a mockup system is designed, which has initially been modelled by virtual means. The thermo-mechanical design methodology is essentially based on FE parametric studies, using a full model including 1st and 2nd level interconnects as well as including solder creep and other materials non-linearity.. To gain an overview on overall influences of materials parameters choice, virtual DOE was made at the beginning. Model complexity and size limits virtual DOE, which was performed with reduced geometric details and elastic material modeling. Comparison on material models comprise visco-plastic models for SAC305 and visco-elastic models for polymers. To reach high T-cycle reliability is a challenge for the mock-up system. The effects were analyzed for both first level and second level interconnects. It is shown that first level bumps fatigue or underfill 1 delamination are highest failure risks, which can be basically affected by choice of the assembly technology, i.e. underfill/undermold and soldermask choices. Simulation inherent issued like the use of a combined secondary/primary creep model vs. an Anand’s model are compared and good agreement has been observed.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124844599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Variability of Mechanical Cycling Durability of SAC305 Solder Joints: Model-Based Assessment using Grain-scale Modeling of Cyclic Shear Loading","authors":"A. Deshpande, Q. Jiang, A. Dasgupta","doi":"10.1109/EuroSimE52062.2021.9410828","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410828","url":null,"abstract":"Functional solder joints experience multiaxial stresses (tensile and shear) as they undergo a combination operational loads such as temperature cycling and out-of-plane PWB flexure/warpage. Research groups often use finite element simulations to quantify stresses and strains in the critical solder joint, by modeling the solder joints as homogenous isotropic volumes. Solder strain (or other similar damage metrics, such as work density) is used to construct fatigue durability curves from fatigue test data and to predict failures under life-cycle loading conditions.In reality, each SAC solder joint consists of few highly anisotropic grains and is neither homogeneous nor isotropic. As a result, homogeneous, isotropic finite element models erroneously misrepresent the true material behavior and neglect the resulting stress concentrations at grain boundaries and triple corners between mis-oriented grains and IMC interfaces. Due to piece-to-piece variability in the grain structure of tested joints, a simple homogeneous isotropic representation leads to significant piece-to-piece uncertainty in predicting the strain levels (and hence the fatigue durability) of each solder joint at any given level of applied loads. A typical approach for dealing with this variability is to test a large number of samples at each loading level and use confidence intervals to determine the statistical variability. However, such a process is resource-intensive and time-consuming as temperature cycling tests can take few months to complete.Therefore, this study aims to quantify the role of the grain structure on the variability in fatigue durability predictions, based on a simulation-based ‘virtualtesting’ alternative. In addition, this study also draws attention to the limitations of modeling solder joints as homogenous isotropic volumes. The approach consists of parametric, grain-scale, anisotropic FEA simulations. Findings of this study can enable more accurate ‘digital twins’ and empower engineers to obtain more accurate, faster and cheaper a-priori estimates about stochastic fatigue reliability predictions.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121067858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IC package related stress effects on the characteristics of ring oscillator circuits","authors":"S. Schlipf, C. Sander, A. Clausner, J. Paul, S. Capecchi, L. Wambera, K. Meier, E. Zschech","doi":"10.1109/EuroSimE52062.2021.9410858","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410858","url":null,"abstract":"The stress related shifts of transistors are measured by precise stress application with a newly designed in-situ four-point bending (4PB) system. A test board including a flip chip packaged test vehicle is loaded with uniaxial stress. The test vehicle contains dedicated ring oscillator circuits fabricated in the 22 nm FDSOI technology node, used to evaluate the effects of thermo-mechanical stress on the characteristics of CMOS devices. Finite element simulation provides insight into the originated stress values in the board, package, and active devices during mechanical loading. Considering the bending caused stress in the devices and the specific layout of the circuits, the directional frequency shifts of the circuits under stress are derived. These shifts are compared with a previous indentation study, which has been developed to induce very localized loads. The comparison aims for verification of the indentation approach to study directional stress related effects as well as very localized effects in chip stacks.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122214498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}