基于MOSFET本体二极管的故障机制检测算法

M. E. Khatib, S. Reitz, J. Warmuth
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引用次数: 1

摘要

自动驾驶在汽车行业中发挥着重要作用,并在很大程度上定义了未来的移动出行。然而,自动驾驶面临着人工智能性能和硬件可靠性等诸多挑战。为了确保安全功能,电子元件的可靠性起着至关重要的作用,必须加以考虑。分析电子系统可靠性研究的一个方面是观察系统的热阻抗,并推导出故障机制与热阻抗行为之间的相关性。近年来,人们提出了几种提高电子器件可靠性的新方法。为了确定焊料空隙对芯片级封装热阻抗的影响,进行了许多研究。本文研究了一种通过被测器件本体二极管(DUT)测量热阻抗的电子封装缺陷诊断和物理损伤检测方法。该检测方法采用MOSFET体二极管温度测量来研究电子封装系统中不同位置的不同失效机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Failure Mechanism Detection Algorithm with MOSFET Body Diode
Autonomous driving is playing a big role in the automotive industry and defines the future of mobility on a big scale. However, autonomous driving faces several challenges, such as the performance of artificial intelligence and hardware reliability. To ensure safe functionality, the reliability of the electronic components plays an essential role and must be taken into consideration. One aspect of studies that analyze the electronics reliability is the observation of the system’s thermal impedance and deriving a correlation between the failure mechanisms and thermal impedance behavior. In recent times, several new approaches have been suggested to improve the electronics reliability. Many studies were carried out to determine the effect of solder voiding on the thermal impedance of chip-level packages. In this paper, a defect diagnosis and physical damage detection method for electronic packaging are studied by measuring the thermal impedance through the body diode of the device under test (DUT). The detection method uses MOSFET body diode temperature measurements to investigate different failure mechanisms at different locations in the electronic packaging system.
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