2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

{"title":"Parametric Simulation of a Packaged Thermoelectric Generator for Electrically Active Implants","authors":"Y. Rao, S. Bouhedma, T. Bechtold, D. Hohlfeld","doi":"10.1109/EuroSimE52062.2021.9410874","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410874","url":null,"abstract":"This work investigates the performance of an implantable packaged thermoelectric generator (TEG) through parametric simulation. A finite element model is proposed, where a packaged TEG is embedded into the human tissue. After thermal resistance matching of the TEG with the surrounding tissue, an optimized size is found for the thermopiles to provide maximum power. The influence of implant position and its housing geometry on TEG performance is simulated. We found that in a promising implant position a TEG of $20 times 20$ mm2 size can provide $160 mu mathrm{W}$ power in a matched resistive load.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132600702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust Package Study for A Power Package by Simulation","authors":"H. Fan, Civen Li, N. Azman, Peilun Yao, Haibin Chen","doi":"10.1109/EuroSimE52062.2021.9410850","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410850","url":null,"abstract":"Delamination and solder crack are key concerns in power package, requiring significant attention by engineers during design and process development phases to ensure lowest risk as possible. At same time, more strict requirement is addressed by customer to meet high requirements for application of automotive products. Therefore, a well understanding of factors which causes delamination and solder crack is able to drive improvements on design and process optimization for more robust package. In this study, simulation models are setup considering different factor effects on delamination and solder crack, like punch tool design and lead design to reduce stress during singulation process, and molding compound materials to minimize stress on solder during thermal cycling test (TCT). Different factor effect on stress for delamination initiation during singulation process are investigated, including lead shape, punch tip shape, punch speed, and also package orientation. Overall package stress with different EMCs are also studied to minimize stress to reduce both solder crack and delamination risk. The paper demonstrated a good case of simulation driven development.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120953051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Paralleling Silicon Carbide MOSFETs in Power Module for Traction Inverters: a Parametric Study","authors":"A. Sitta, Giuseppe Mauromicale, V. Giuffrida, Alessandra Manzitto, Marco Papaserio, D. Cavallaro, G. Bazzano, M. Renna, S. Rizzo, M. Calabretta","doi":"10.1109/EuroSimE52062.2021.9410856","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410856","url":null,"abstract":"The high power demanding in many emerging power electronic applications requires innovative solutions in semiconductor field. One of the possible keys to satisfy this requirement is the use of more paralleled devices. For traction applications, parallel connection of Silicon Carbide (SiC) MOSFETs is widely employed. In this framework, the power devices are housed in module packages. This paper presents a parametric analysis of a SiC power module for traction inverters, with a three-phase topology, containing many paralleled dice for each swich. The scope of the work is to study this phenomenon with a numerical investigation based on a circuit simulation, evaluating the junction temperature in a case study. The parameters varied in the simulations are the threshold voltage and the drain-source on-state resistance.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of prepreg shrinkage and investigation of its influence on warpage simulation","authors":"J. Zündel, M. Sagerer, M. Frewein, T. Krivec","doi":"10.1109/EuroSimE52062.2021.9410833","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410833","url":null,"abstract":"Glass fibers pre-impregnated with a thermosetting resin matrix, so-called prepregs, are one of the base materials used in the state-of-the-art electronics industry. During printed circuit board (PCB) manufacturing, besides other influence factors, the chemical shrinkage of pure thermoset materials during the curing process was already identified in previous studies as one of the main causes of warpage of PCBs and electronic packages respectively.The aim of this study was to quantify the prepreg shrinkage caused by the curing of its resin matrix and investigate the impact on the results when considering these shrinkage properties in warpage simulation. The dimensional changes of the prepared test specimens when exposed to curing temperature were recorded using the method of digital image correlation. By providing the measurement data as objective, simulation based on an optimization algorithm was used to determine material specific values describing the observed shrinkage behavior. The deducted, orthotropic shrinkage behavior is implemented into advanced thermo-mechanical material models of dielectric board or package layers thus allowing an improved warpage simulation.Validation of the results by simulating further experimental trials proved that the presented approach of combining experimental measurements with virtual optimization provides accurate material characteristics describing the dimensional changes of prepregs during curing. The paper shows a panel level warpage calculation which has been performed to show the influence of the implemented enhanced material models of the characterized prepregs on the accuracy of the simulation results. It is shown that the improvement in the simulation quality versus a classical “CTE-only” warpage approach is significant. Thus the implementation of the resin and prepreg shrinkage behavior into dielectric material models finally can be considered as advantageous in order to carry out realistic and accurate warpage simulation of PCBs as well as semi-finished production panels during the manufacturing process.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128184882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of different models of magnetic nanoparticle aggregation in microchannels with magnetic field","authors":"Péter Pálovics, M. Németh, M. Rencz","doi":"10.1109/EuroSimE52062.2021.9410878","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410878","url":null,"abstract":"The phenomenon of nanoparticle aggregation is relevant for the applications in which magnetic nanoparticles are used and controlled by a magnetic field. In this work, the validity of an improved model for the magnetic nanoparticle aggregation in microchannels in an external magnetic field is investigated. The nanoparticles in the magnetic field are arranging into chains whose orientation is parallel to the external magnetic field in the absence of other forces. These chains were described in our previous work with a linear chain model, which was later used to establish a specialized macroscopic two-phase CFD model and solver. This solver is capable of modelling the MNP aggregation on the macroscopic scale without enormous computational demands. In this paper, the proposed linear chain model is compared to more detailed discrete particle model simulations, which were performed with an extended version of OpenFOAM’s discrete particle solver DPMFoam. In the simulations, several configurations were investigated, including single particle chains with different lengths or chain distributions at the different particle concentrations.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132307215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and Simulation of a Low Voltage Electroosmotic Micropump for Non-Newtonian Fluids","authors":"M. Badran","doi":"10.1109/EuroSimE52062.2021.9410857","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410857","url":null,"abstract":"Non-mechanical micropumps, which do not require moving parts, have prominent role in several biomedical microsystems such as drug delivery, and lab-on-a-chip. Electroosmotic micropump is a non-mechanical micropump which can pump working fluids with wide range of electrical conductivity by the application of an electrical field across a channel. In this study, a low voltage electroosmotic micropump with blood as the working fluid is modeled and simulated. In addition, the effect of changing the depth (D) and the length (L) of the electroosmotic micropump on the free flow velocity and the pressure drop of the fluid are examined to assist in designing a low voltage electroosmotic micropump for blood transport. As a result, a 20V electroosmotic micropump with depth of 50 $mu mathrm{m}$, length 100 $mu {mathrm {m}}$ and width of 1 mm is designed which provides a flow rate of ${mathrm {42mu L/mdot{m}}}$ and a static pressure of 14 Pa.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122556321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Infrared thermal imaging as inline quality assessment tool","authors":"S. Panahandeh, D. May, D. Wargulski, E. Boschman, R. Schacht, M. A. Ras, B. Wunderle","doi":"10.1109/EuroSimE52062.2021.9410883","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410883","url":null,"abstract":"Pulsed Infrared Thermography (PIRT) is a very fast and non-destructive technique for testing various types of specimens. This makes PIRT interesting for inspections in industrial production lines. Especially for the die attach interface inspection of sintered and soldered electronic components and layer to layer interfaces in fiber-reinforced plastic (FRP), the industry is looking for alternatives to cost extensive X-ray methods and the time-consuming scanning acoustic microscopy. This work will present PIRT as inline quality assessment tool with an integrated technique to perform reliable component inspections on a wide range of different specimens.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115386439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lifetime modelling of sintered silver interconnected power devices by FEM and experiment","authors":"Anu Mathew, R. Dudek, A. Otto, C. Scherf, S. Rzepka, Nilavzhagan Subbiah, Kashmira Arvind Rane, J. Wilde","doi":"10.1109/EuroSimE52062.2021.9410877","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410877","url":null,"abstract":"In this paper, the research is focused on lifetime analysis and prediction of silver sintered power devices by experiment and numerical simulation. As researches are emerging on the field of lead-free interconnect technology, silver sintering become an alternative interconnect technology to standard solders. This technology differs from other interconnect technologies because of it’s improved thermal and mechanical properties. Aluminum cladded copper core (CucorAl) wires have been used to prevent early fail of top contacts. Material degradation due to thermal fatigue in the sintered silver still influences the reliability in the interconnect, in particular for high temperature swings upcoming with wide bandgap semiconductors. Plastic deformation is observed in sintered silver interconnect which depends on time and temperature. This research work presents combined experimental and finite element analysis (FEA) results for developing a lifetime model for the sintered silver power modules. Different parameters such as porosities on the sintered silver layer, substrates, plastic and creep constitutive laws, die thickness and sizes, should be considered during the development of lifetime model. In this investigation, Insulated-gate bipolar transistor (IGBT) chips are integrated on different substrates such as printed circuit board (PCB- Help H), insulated metal substrate (IMS), copper lead frame (Cu-lead frame) and direct copper bond (DCB) by silver sintered interconnect. Failure modes such as wire bond lift-off and die bond degradation are observed during this research.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125872575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamical characterisation of a miniaturised bulge tester for use at elevated temperatures","authors":"U. Zschenderlein, H. Zhang, R. Ecke, N. Jöhrmann, B. Wunderle","doi":"10.1109/EuroSimE52062.2021.9410834","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410834","url":null,"abstract":"The bulge test is a standard technique to characterise thin films, but rarely has it been used to impose fatigue damage and extract subcritical thermo-mechanical data. It features, in contrast to many other methods a biaxial stress state. Since bulge testers have usually been used for static tests, dynamic characterisations of such test stands are widely missing. In this paper, we present and discuss the design of a minimized bulge tester for use at elevated temperatures. We measure and discuss the characteristics of the dynamic pressure loading behaviour and provide curves for pressure amplitudes as well as offset pressures. We investigate oscillating membranes with IR cameras and discuss thermal oscillations and cold spots at cracked membranes.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123655237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Finite Element Analysis of Copper Pillar Interconnect Stress of Flip-chip Chip-Scale Package","authors":"Amirul Afripin, B. Carpenter, T. Hauck","doi":"10.1109/EuroSimE52062.2021.9410879","DOIUrl":"https://doi.org/10.1109/EuroSimE52062.2021.9410879","url":null,"abstract":"Current electronic devices and features sizes are becoming smaller, lighter, with ever-increasing electrical performance requirements. For flip chip devices, Cu-pillar technology enables reduced pitch and reduced package size with good electrical performance. Cu-pillar interconnects require the development of reliable interconnects including many design features such as: die thickness, underfill materials, and substrate design. The enhanced design is needed to avoid issues associated with package warpage, die backside stress, low-k dielectric cracking (during chip attach and temperature cycling), solder joint reliability, and electromigration failure. This paper presents mechanical simulation through finite element modeling of Cu-pillar interconnects and package designs to help the design selection process to improve the reliability of the package under thermal-mechanical loading conditions. The simulation uses a technique of homogenized properties of the Cu-pillar and the underfill material in the die-attach area in the global model to determine stresses. Two failure modes were assessed: a) Brittle fracture of the die and b) Interface delamination between Al pad/die interface. Results show that a thinner Si die has a lower risk of brittle crack compared to the thicker die of 300um. The use of mold compound with higher coefficient of thermal expansion (CTE) reduces delamination risk of the Al pad.","PeriodicalId":198782,"journal":{"name":"2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130812510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}