Paralleling Silicon Carbide MOSFETs in Power Module for Traction Inverters: a Parametric Study

2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2021-04-19 DOI:10.1109/EuroSimE52062.2021.9410856

A. Sitta, Giuseppe Mauromicale, V. Giuffrida, Alessandra Manzitto, Marco Papaserio, D. Cavallaro, G. Bazzano, M. Renna, S. Rizzo, M. Calabretta

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引用次数: 2

Abstract

The high power demanding in many emerging power electronic applications requires innovative solutions in semiconductor field. One of the possible keys to satisfy this requirement is the use of more paralleled devices. For traction applications, parallel connection of Silicon Carbide (SiC) MOSFETs is widely employed. In this framework, the power devices are housed in module packages. This paper presents a parametric analysis of a SiC power module for traction inverters, with a three-phase topology, containing many paralleled dice for each swich. The scope of the work is to study this phenomenon with a numerical investigation based on a circuit simulation, evaluating the junction temperature in a case study. The parameters varied in the simulations are the threshold voltage and the drain-source on-state resistance.

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牵引逆变器功率模块并联碳化硅mosfet:参数化研究

许多新兴电力电子应用的高功率要求需要半导体领域的创新解决方案。满足这一要求的一个可能的关键是使用更多的并联设备。在牵引应用中，碳化硅(SiC) mosfet的并联被广泛采用。在这个框架中，功率器件被封装在模块封装中。本文介绍了一种用于牵引逆变器的SiC功率模块的参数分析，该模块具有三相拓扑结构，每个开关包含许多并联骰子。工作的范围是通过基于电路模拟的数值调查来研究这一现象，在一个案例研究中评估结温。仿真中变化的参数是阈值电压和漏源导通电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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