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Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)最新文献

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Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs 包含两个对称电压能力igbt的斩波单元的仿真与测量
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803533
M. O. Berraies, P. Austin, J. Sanchez, J. Laur, M. Roy
{"title":"Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs","authors":"M. O. Berraies, P. Austin, J. Sanchez, J. Laur, M. Roy","doi":"10.1109/BIPOL.1999.803533","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803533","url":null,"abstract":"In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116223048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A slew rate enhancement circuit for voltage-mode operational amplifiers 一种用于电压型运算放大器的压转率增强电路
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803520
T. Stockstad, E. Greeneich
{"title":"A slew rate enhancement circuit for voltage-mode operational amplifiers","authors":"T. Stockstad, E. Greeneich","doi":"10.1109/BIPOL.1999.803520","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803520","url":null,"abstract":"A slew rate enhancement circuit for voltage-mode operational amplifiers is presented which monitors the differential input voltage to detect slew rate conditions. An example amplifier has its slew rate improved from 11 V//spl mu/s to greater than 170 V//spl mu/s.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114808781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diffused resistor mismatch modeling and characterization 扩散电阻失配建模和表征
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803518
P. Drennan
{"title":"Diffused resistor mismatch modeling and characterization","authors":"P. Drennan","doi":"10.1109/BIPOL.1999.803518","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803518","url":null,"abstract":"This paper presents a novel, physically based model and method for the characterization of diffused resistor mismatch. It is shown that the mismatch does not follow the 1/(/spl radic/(LW)) dependence as reported in other publications. We also demonstrate that there is an optimum sheet resistance for resistor mismatch as determined by a trade-off between the ion implant dose concentration and the junction depth mismatch.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130181546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Carbon doped SiGe heterojunction bipolar transistors for high frequency applications 高频应用的碳掺杂SiGe异质结双极晶体管
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803538
H. J. Osten, D. Knoll, B. Heinemann, H. Rücker, B. Tillack
{"title":"Carbon doped SiGe heterojunction bipolar transistors for high frequency applications","authors":"H. J. Osten, D. Knoll, B. Heinemann, H. Rücker, B. Tillack","doi":"10.1109/BIPOL.1999.803538","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803538","url":null,"abstract":"The incorporation of low concentrations of carbon (<10/sup 20/ cm/sup -3/) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. C also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117166680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Impact ionization and neutral base recombination in SiGe HBTs SiGe HBTs中的冲击电离和中性碱重组
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803525
M. S. Peter, J. Slotboom, D. Terpstra
{"title":"Impact ionization and neutral base recombination in SiGe HBTs","authors":"M. S. Peter, J. Slotboom, D. Terpstra","doi":"10.1109/BIPOL.1999.803525","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803525","url":null,"abstract":"Both neutral base recombination and impact ionization tend to reduce the base current with increasing V/sub CB/. Contrary to other publications, no experimental evidence for neutral base recombination is found in our SiGe HBTs. In particular, temperature measurements of the CB diode of the SiGe HBTs did not show any difference compared to the Si control transistors.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124833402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
2.5 GHz pin electronics SiGe driver for IC test equipment 用于IC测试设备的2.5 GHz引脚电子SiGe驱动器
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803519
D. Goren, M. Zelikson, M. Leibowitz, F. Szenher
{"title":"2.5 GHz pin electronics SiGe driver for IC test equipment","authors":"D. Goren, M. Zelikson, M. Leibowitz, F. Szenher","doi":"10.1109/BIPOL.1999.803519","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803519","url":null,"abstract":"The design and characterization of a 2.5 GHz pin electronic SiGe driver is reported. Measured performance includes: programmable output swing from 100 mV to 1.7 V into 25 /spl Omega/ t/sub rise//t/sub fall/ of 60 ps at full swing, propagation delay dispersion of 20 ps.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132069792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Merits and requirements of a few RF architectures 几种射频架构的优点和要求
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803527
P. Davis
{"title":"Merits and requirements of a few RF architectures","authors":"P. Davis","doi":"10.1109/BIPOL.1999.803527","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803527","url":null,"abstract":"In a cellular radio, as in any system, the architecture determines the quantity and quality of bipolar and BiCMOS content. Requirements and merits of a few transmitter and receiver architectures are discussed. Some of these, such as single IF, are in handsets selling by the millions every year. Some, such as direct conversion at the antenna, remain in the planning stages because of the present state of A/D technology.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130467832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Power integrated circuits: devices and applications 电源集成电路:器件和应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803530
G. Amaratunga, F. Udrea, R. McMahon
{"title":"Power integrated circuits: devices and applications","authors":"G. Amaratunga, F. Udrea, R. McMahon","doi":"10.1109/BIPOL.1999.803530","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803530","url":null,"abstract":"This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123006703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
SiGe clock and data recovery IC with linear type PLL for 10 Gb/s SONET application 具有线性锁相环的SiGe时钟和数据恢复IC，适用于10gb /s SONET应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803552
Y. Greshishchev, P. Schvan
{"title":"SiGe clock and data recovery IC with linear type PLL for 10 Gb/s SONET application","authors":"Y. Greshishchev, P. Schvan","doi":"10.1109/BIPOL.1999.803552","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803552","url":null,"abstract":"An integrated 10 Gb/s clock and data recovery circuit implemented in IBM's SiGe technology is presented. It employs a linear type PLL based on a single-edge version of the Hogge type phase detector, an LC-VCO and a high-performance charge pump. Measured recovered clock jitter is less than 1 ps RMS. The IC dissipates 1.5 W with -5 V power supply.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122462820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications 一个完全集成的3 V 2.3 GHz同步振荡器，用于WLAN应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803546
F. Badets, Y. Deval, J. Bégueret, A. Spataro, P. Fouillat
{"title":"A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications","authors":"F. Badets, Y. Deval, J. Bégueret, A. Spataro, P. Fouillat","doi":"10.1109/BIPOL.1999.803546","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803546","url":null,"abstract":"In order to fully integrate a low power, low phase noise frequency synthesizer, a 2.3 GHz synchronous oscillator has been fully implemented on a 0.8 /spl mu/m, two metal layer standard BiCMOS technology. It is able to lock on a subharmonic external signal and its locking range is about 40 MHz for a 400 MHz injected signal. The oscillator and its synchronization circuit consume less than 14 mA on a 3 V battery.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127858110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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