Impact ionization and neutral base recombination in SiGe HBTs

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI:10.1109/BIPOL.1999.803525

M. S. Peter, J. Slotboom, D. Terpstra

引用次数: 8

Abstract

Both neutral base recombination and impact ionization tend to reduce the base current with increasing V/sub CB/. Contrary to other publications, no experimental evidence for neutral base recombination is found in our SiGe HBTs. In particular, temperature measurements of the CB diode of the SiGe HBTs did not show any difference compared to the Si control transistors.

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SiGe HBTs中的冲击电离和中性碱重组

随着V/sub CB/的增大，中性基极复合和冲击电离都有减小基极电流的趋势。与其他出版物相反，在我们的SiGe HBTs中没有发现中性碱基重组的实验证据。特别是，与硅控制晶体管相比，SiGe HBTs的CB二极管的温度测量没有显示出任何差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)

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