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Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)最新文献

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A current-folded up-conversion mixer and a VCO with center-tapped inductor in a SiGe-HBT technology for 5 GHz wireless LAN applications 采用SiGe-HBT技术的电流折叠上转换混频器和带中心抽头电感的压控振荡器，适用于5 GHz无线局域网应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803550
G. Grau, U. Langmann, W. Winkler, D. Knoll, J. Osten, K. Pressel
{"title":"A current-folded up-conversion mixer and a VCO with center-tapped inductor in a SiGe-HBT technology for 5 GHz wireless LAN applications","authors":"G. Grau, U. Langmann, W. Winkler, D. Knoll, J. Osten, K. Pressel","doi":"10.1109/BIPOL.1999.803550","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803550","url":null,"abstract":"This paper describes a 5.8 GHz up-conversion mixer core based on a current-folded architecture and a 5 GHz differential emitter-coupled VCO utilizing a center-tapped inductor and a substrate shield. Both circuits are fabricated in a 0.8 /spl mu/m 45 GHz f/sub T/ SiGe-HBT technology and operate with a supply of -2.3 V to -3.3 V.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115608901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effect of varactor non-linearity on the phase noise of a completely integrated 1.8 GHz VCO 变容管非线性对完全集成的1.8 GHz压控振荡器相位噪声的影响
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803545
J. Rogers, J. Macedo, J. Ojha, C. Plett
{"title":"The effect of varactor non-linearity on the phase noise of a completely integrated 1.8 GHz VCO","authors":"J. Rogers, J. Macedo, J. Ojha, C. Plett","doi":"10.1109/BIPOL.1999.803545","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803545","url":null,"abstract":"This work discusses variations in phase noise over the tuning range. The circuit has a phase noise of /spl sim/101 dBc/Hz at 100 kHz offset, and delivers -2 dBm differentially. Calculations predict phase noise with only a small error.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125800360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module 采用厚金属工艺附加模块的SiGe BiMOS工艺中的高Q电感器
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803547
R. Groves, J. Malinowski, R. Volant, D. Jadus
{"title":"High Q inductors in a SiGe BiMOS process utilizing a thick metal process add-on module","authors":"R. Groves, J. Malinowski, R. Volant, D. Jadus","doi":"10.1109/BIPOL.1999.803547","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803547","url":null,"abstract":"Design tradeoffs for the optimization of inductor Q have been analyzed, and thick metallization has been identified as the most promising technology enhancement. Peak Qs approaching 19 have been demonstrated using thick metal.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130660118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Physical analysis of current snap-back phenomenon in buffered high power rectifiers 缓冲式大功率整流器电流回跳现象的物理分析
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803531
M. Trivedi, K. Shenai
{"title":"Physical analysis of current snap-back phenomenon in buffered high power rectifiers","authors":"M. Trivedi, K. Shenai","doi":"10.1109/BIPOL.1999.803531","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803531","url":null,"abstract":"This paper provides a physical explanation of the snap-back observed in the forward I-V characteristics of high power rectifiers having a buffer layer at the rectifying junction, as found in punch-through IGBTs. Current density at which the snap-back occurs and the extent of the fall in voltage are shown to be strongly dependent on the doping, width and carrier lifetime of the buffer layer.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116179245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications 基于SOI的新型高性能横向BJT，金属衬底单硅外基，适用于低功耗/低成本射频应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803542
T. Yamada, H. Nii, K. Inoh, T. Shino, S. Kawanaka, Y. Minami, T. Fuse, Y. Yoshimi, Y. Katsumata, S. Watanabe, J. Matsunaga, H. Ishiuchi
{"title":"A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications","authors":"T. Yamada, H. Nii, K. Inoh, T. Shino, S. Kawanaka, Y. Minami, T. Fuse, Y. Yoshimi, Y. Katsumata, S. Watanabe, J. Matsunaga, H. Ishiuchi","doi":"10.1109/BIPOL.1999.803542","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803542","url":null,"abstract":"A novel device structure to realize high-performance SOI lateral BJTs is presented. A metal-backed single-silicon external base electrode and a simple SOI structure achieve low base resistance and low parasitic capacitances, respectively. Due to the minimal parasitics, the device exhibited an fmax of 62 GHz with a low power dissipation per emitter area of 0.55 mW//spl mu/m/sup 2/.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122375627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Extraction and modelling of thermal behavior in trench isolated bipolar structures 沟槽隔离双极结构热行为的提取与建模
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803535
D. Walkey, T. J. Smy, D. Marchesan, H. Tran, C. Reimer, T. Kleckner, M. K. Jackson, Michael Schroter, J. R. Long
{"title":"Extraction and modelling of thermal behavior in trench isolated bipolar structures","authors":"D. Walkey, T. J. Smy, D. Marchesan, H. Tran, C. Reimer, T. Kleckner, M. K. Jackson, Michael Schroter, J. R. Long","doi":"10.1109/BIPOL.1999.803535","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803535","url":null,"abstract":"A new thermal dissipation mechanism in small geometry trench isolated devices is demonstrated through measurement and simulation. Limitations on the extraction and performance of single and double exponential transient thermal models are illustrated using measurements on devices with a wide range of geometries.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122977939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems 用于高比特率ETDM传输系统的InP/InGaAs异质结双极晶体管电路
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI: 10.1109/BIPOL.1999.803553
P. André, N. Kauffmann, P. Desrousseaux, M. Riet, A. Konczykowska, J. Godin
{"title":"InP/InGaAs heterojunction bipolar transistor circuits for high bit-rate ETDM transmission systems","authors":"P. André, N. Kauffmann, P. Desrousseaux, M. Riet, A. Konczykowska, J. Godin","doi":"10.1109/BIPOL.1999.803553","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803553","url":null,"abstract":"Several ICs based on InP/InGaAs DHBT technology and suitable for future 40 Gb/s ETDM optical transmission systems are presented. More than 25 Gb/s operation has been obtained with an MS-DFF circuit, latched and double-latched multiplexer. A 28 GHz static frequency divider and a 46 Gb/s MUX are reported. Finally, a MUX-driver able to supply 2 Vpp at 40 Gb/s is presented. The experimental results obtained, in the state of the art, demonstrate the strong potential of the InP-based HBT technology.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116000769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications 单片SiGe功率放大器，用于双模(CDMA/AMPS)蜂窝手机应用
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1900-01-01 DOI: 10.1109/BIPOL.1999.803548
P. Tseng, L.Y. Zhang, G. Gao, M. F. Chang
{"title":"A monolithic SiGe power amplifier for dual-mode (CDMA/AMPS) cellular handset applications","authors":"P. Tseng, L.Y. Zhang, G. Gao, M. F. Chang","doi":"10.1109/BIPOL.1999.803548","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803548","url":null,"abstract":"A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe-Si HBT foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity and efficiency. At V/sub cc/>4.2 V, the power amplifier shows an excellent linearity (1st ACPR<-44.1 dBc and 2nd ACPR <-57.1 dBc) up to 28 dBm output power for CDMA applications. Biased at the same V/sub cc/, the power amplifier also meets AMPS requirements in maximum output power (31 dBm) and linearity (with 2nd and 3rd harmonic to fundamental ratios lower than -40 dBc and -60 dBc, respectively).","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117066564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Proceedings of the 1999 Bipolar/BiCMOS circuits and technology meeting 1999年双极/BiCMOS电路与技术会议论文集
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1900-01-01 DOI: 10.1109/BIPOL.1999.803515
Bipolar, BiCMOS Circuits, Ieee Circuits
{"title":"Proceedings of the 1999 Bipolar/BiCMOS circuits and technology meeting","authors":"Bipolar, BiCMOS Circuits, Ieee Circuits","doi":"10.1109/BIPOL.1999.803515","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803515","url":null,"abstract":"These proceedings papers cover topics such as: design related aspects of modelling; advanced analog circuits; device physics; and wireless bipolar RF systems.\"","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132045075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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