Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)最新文献

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Intermodulation characteristics of UHV/CVD SiGe HBTs UHV/CVD SiGe HBTs的互调特性
G. Niu, J. Cressler, W. Ansley, C. Webster, R. Anna, N. King
{"title":"Intermodulation characteristics of UHV/CVD SiGe HBTs","authors":"G. Niu, J. Cressler, W. Ansley, C. Webster, R. Anna, N. King","doi":"10.1109/BIPOL.1999.803523","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803523","url":null,"abstract":"Extensive SPICE circuit simulations were performed to explore the physics underlying the unusually high linearity (15 dBc OIP3/P/sub DC/) observed in SiGe HBT's. The EB and CB depletion capacitances were found to be the major contributors to the observed high linearity. Both the absolute value and the bias dependence of the depletion capacitances contribute to nonlinearity, while the diffusion capacitance has negligible impact.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128048622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage 冲击电离引起的高速双极晶体管的不稳定性及其对最大可用输出电压的影响
M. Rickelt, H. Rein
{"title":"Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage","authors":"M. Rickelt, H. Rein","doi":"10.1109/BIPOL.1999.803524","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803524","url":null,"abstract":"Analytical relations for the onset of impact-ionization induced instabilities in bipolar transistors are derived and verified by both 3D simulations and measurements. They allow the designer to calculate the maximum usable DC output voltage for different driving conditions.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128261658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A Si/SiGe HBT sub-harmonic mixer/downconverter 一个Si/SiGe HBT次谐波混频器/下变频器
Liwei Sheng, J. Jensen, Lawrence E. Larson
{"title":"A Si/SiGe HBT sub-harmonic mixer/downconverter","authors":"Liwei Sheng, J. Jensen, Lawrence E. Larson","doi":"10.1109/BIPOL.1999.803529","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803529","url":null,"abstract":"A wideband sub-harmonic mixer/direct conversion downconverter is implemented in Si/SiGe HBT technology, with improved rejection of the local oscillator, high input intercept and low current requirements. The circuit utilizes a combination of phase shifters operating at forty five degrees and ninety degrees to achieve better than 33 dB rejection of the local oscillator; each mixer has an input intercept point in excess of 2 dBm (extrapolated) and dc current of 2.4 mA from a 3.3 V supply.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":" 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120828655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High performance MIM capacitor for RF BiCMOS/CMOS LSIs 用于RF BiCMOS/CMOS lsi的高性能MIM电容器
T. Yoshitomi, Y. Ebuchi, H. Kimijama, T. Ohguro, E. Morifuji, H. Momose, K. Kasai, K. Ishimaru, F. Matsuoka, Y. Katsumata, M. Kinugawa, H. Iwai
{"title":"High performance MIM capacitor for RF BiCMOS/CMOS LSIs","authors":"T. Yoshitomi, Y. Ebuchi, H. Kimijama, T. Ohguro, E. Morifuji, H. Momose, K. Kasai, K. Ishimaru, F. Matsuoka, Y. Katsumata, M. Kinugawa, H. Iwai","doi":"10.1109/BIPOL.1999.803543","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803543","url":null,"abstract":"Using a newly proposed structure of the multi-via MIM capacitor, amorphous Ta/sub 2/O/sub 5/ films were investigated. Amorphous Ta/sub 2/O/sub 5/ with the proposed structure is one of the suitable combinations for the capacitors for RF analog applications.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129587202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor 工业SiGe异质双极晶体管的综合流体动力学模拟
M. Bartels, S. Decker, B. Neinhus, K. Bach, A. Schuppen, B. Meinerzhagen
{"title":"Comprehensive hydrodynamic simulation of an industrial SiGe heterobipolar transistor","authors":"M. Bartels, S. Decker, B. Neinhus, K. Bach, A. Schuppen, B. Meinerzhagen","doi":"10.1109/BIPOL.1999.803537","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803537","url":null,"abstract":"Based on SIMS and CV profile measurements and transport parameters derived from Monte Carlo simulations, the generalized hydrodynamic model agrees very well with experimental data for collector current, ideality factor, Early voltage, open-base collector/emitter breakdown voltage, and cutoff frequency. To the authors' best knowledge this is the first time that such a comprehensive verification could be demonstrated for an industrial SiGe HBT and a hydrodynamic model.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131034936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Novel high voltage SOI structures 新型高压SOI结构
A.Q. Huang, X. Li, N. Sun
{"title":"Novel high voltage SOI structures","authors":"A.Q. Huang, X. Li, N. Sun","doi":"10.1109/BIPOL.1999.803532","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803532","url":null,"abstract":"This paper proposes several new device structures suitable for realizing high voltage power devices in thin SOI layer. Both analytical and simulation results show that the on-resistance of a unipolar device based on these structures is significantly reduced and the figure-of-merit, Ron/VB, can be an order of magnitude smaller than the theoretical limitation of vertical power devices.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129467585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
BiCMOS6G: a high performance 0.35 /spl mu/m SiGe BiCMOS technology for wireless applications BiCMOS6G:用于无线应用的高性能0.35 /spl mu/m SiGe BiCMOS技术
A. Monroy, W. Laurens, M. Marty, D. Dutartre, D. Gloria, J. Carbonéro, A. Perrotin, M. Roche, A. Chantre
{"title":"BiCMOS6G: a high performance 0.35 /spl mu/m SiGe BiCMOS technology for wireless applications","authors":"A. Monroy, W. Laurens, M. Marty, D. Dutartre, D. Gloria, J. Carbonéro, A. Perrotin, M. Roche, A. Chantre","doi":"10.1109/BIPOL.1999.803540","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803540","url":null,"abstract":"BiCMOS6G, a 200 mm 0.35 /spl mu/m SiGe BiCMOS technology, is presented. This technology features a low complexity double-poly SiGe HBT with 60 GHz f/sub max/, added to stand-alone CMOS and high-quality passive components. It is ideally suited to the development of highly integrated wireless communications circuits.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"92 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131922938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS SiGe BiCMOS中完全集成的5 ghz频率合成器
H. Ainspan, M. Soyuer
{"title":"A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS","authors":"H. Ainspan, M. Soyuer","doi":"10.1109/BIPOL.1999.803551","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803551","url":null,"abstract":"This paper presents a 20-channel, 4.850-5.325 GHz PLL-based frequency synthesizer implemented in a production SiGe BiCMOS technology. The circuit is fully integrated, including the loop filter capacitor and VCO. A fast settling time of 10 /spl mu/s is measured with a reference frequency of 12.5 MHz. Wafer-level tests indicate a phase noise below -100 dBc/Hz at a 1 MHz offset. The chip dissipates 255 mW from a 3.3 V supply and occupies an active area of 2 mm/sup 2/.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116239754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
RF and microwave noise optimization of UHV/CVD SiGe HBTs UHV/CVD SiGe hbt射频和微波噪声优化
G. Niu, W. Ansley, Shiming Zhang, J. Cressler, C. Webster, R. Groves
{"title":"RF and microwave noise optimization of UHV/CVD SiGe HBTs","authors":"G. Niu, W. Ansley, Shiming Zhang, J. Cressler, C. Webster, R. Groves","doi":"10.1109/BIPOL.1999.803517","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803517","url":null,"abstract":"This paper demonstrates a predictive noise estimation methodology for SiGe HBTs which combines AC measurement, calibrated AC simulation and two of the latest Y-parameter-based noise models. The current and frequency dependence of the minimum noise figure, the optimum generator admittance, and the noise resistance are simulated and compared with measurements. The observed agreements and discrepancies are investigated using circuit analysis of the chain noisy two-port representation. The SPICE model description of thermal noise produces a better overall agreement to data for the devices under study.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124671174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra-low-temperature low-ohmic contacts for SOA applications 用于SOA应用的超低温低欧姆触点
L. Nanver, H. V. van Zeijl, H. Schellevis, R. Mallee, J. Slabbekoorn, R. Dekker, J. Slotboom
{"title":"Ultra-low-temperature low-ohmic contacts for SOA applications","authors":"L. Nanver, H. V. van Zeijl, H. Schellevis, R. Mallee, J. Slabbekoorn, R. Dekker, J. Slotboom","doi":"10.1109/BIPOL.1999.803544","DOIUrl":"https://doi.org/10.1109/BIPOL.1999.803544","url":null,"abstract":"High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300/spl deg/C. This is the maximum allowable temperature after gluing to glass in silicon-on-anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124673316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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