{"title":"电源集成电路:器件和应用","authors":"G. Amaratunga, F. Udrea, R. McMahon","doi":"10.1109/BIPOL.1999.803530","DOIUrl":null,"url":null,"abstract":"This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Power integrated circuits: devices and applications\",\"authors\":\"G. Amaratunga, F. Udrea, R. McMahon\",\"doi\":\"10.1109/BIPOL.1999.803530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.\",\"PeriodicalId\":194523,\"journal\":{\"name\":\"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1999.803530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1999.803530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power integrated circuits: devices and applications
This paper is concerned with recent trends in high voltage devices for integrated circuits and prospective industrial applications of high voltage power integrated circuits. New device concepts are explored in comparison with classical LDMOSFETs and LIGBTs. Alternative technologies to the conventional junction-isolation technology, such as high voltage SOI technology are also briefly analysed.