扩散电阻失配建模和表征

Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) Pub Date : 1999-09-26 DOI:10.1109/BIPOL.1999.803518

P. Drennan

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引用次数: 24

摘要

本文提出了一种新的、基于物理的扩散电阻失配表征模型和方法。结果表明，不匹配并不像其他出版物报道的那样遵循1/(/spl基/(LW))的依赖关系。我们还证明，在离子注入剂量浓度和结深度失配之间的权衡决定了电阻失配的最佳片电阻。

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Diffused resistor mismatch modeling and characterization

This paper presents a novel, physically based model and method for the characterization of diffused resistor mismatch. It is shown that the mismatch does not follow the 1/(/spl radic/(LW)) dependence as reported in other publications. We also demonstrate that there is an optimum sheet resistance for resistor mismatch as determined by a trade-off between the ion implant dose concentration and the junction depth mismatch.

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Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)

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