M. O. Berraies, P. Austin, J. Sanchez, J. Laur, M. Roy
{"title":"包含两个对称电压能力igbt的斩波单元的仿真与测量","authors":"M. O. Berraies, P. Austin, J. Sanchez, J. Laur, M. Roy","doi":"10.1109/BIPOL.1999.803533","DOIUrl":null,"url":null,"abstract":"In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on.","PeriodicalId":194523,"journal":{"name":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs\",\"authors\":\"M. O. Berraies, P. Austin, J. Sanchez, J. Laur, M. Roy\",\"doi\":\"10.1109/BIPOL.1999.803533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on.\",\"PeriodicalId\":194523,\"journal\":{\"name\":\"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1999.803533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1999.803533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs
In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on.