Nature Electronics最新文献_第8页

Autonomous aerial drones learn aerobatic manoeuvres 自主无人机学习特技飞行

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-22 DOI: 10.1038/s41928-025-01399-x

Katharina Zeissler

引用次数: 0

Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications 氮化镓多通道器件，锁存诱发低于60 mv / 10年的亚阈值斜坡用于射频应用

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-22 DOI: 10.1038/s41928-025-01391-5

Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin A. Parke, Robert S. Howell, Martin Kuball

{"title":"Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications","authors":"Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin A. Parke, Robert S. Howell, Martin Kuball","doi":"10.1038/s41928-025-01391-5","DOIUrl":"10.1038/s41928-025-01391-5","url":null,"abstract":"Aluminium gallium nitride/gallium nitride (AlGaN/GaN)-based superlattice castellated field-effect transistors are a potential basis for high-power radiofrequency amplifiers and switches in future radars. The reliability of such devices, however, is not well understood. Here we report transistor latching in multichannel GaN transistors. At the latching condition, drain current sharply transits from an off-state value to a high on-state value with a slope less than 60 mV per decade. Current–voltage measurements, simulations and correlated electroluminescent emission at the latching condition indicate that triggering of fin-width-dependent localized impact ionization is responsible for the latching. This localization is attributed to the presence of fin-width variation due to variability in the fabrication process. The latching condition is reversible and non-degrading, and we show that it can lead to improvement in the transconductance characteristics of transistors, implying improved linearity and power in radiofrequency power amplifiers. A distribution in fin widths, due to variability in the fabrication process, can be used to study a latching condition in gallium nitride transistors in which drain current sharply transits from an off-state value to a high on-state value with a slope of less than 60 mV per decade.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 6","pages":"510-517"},"PeriodicalIF":40.9,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01391-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144113421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrasound-induced wireless implantable stimulator for adaptive pain management 用于适应性疼痛管理的超声诱导无线植入式刺激器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-20 DOI: 10.1038/s41928-025-01377-3

引用次数: 0

A smart acoustic textile for health monitoring 用于健康监测的智能声学纺织品

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-19 DOI: 10.1038/s41928-025-01386-2

Yingqiang Wang, Chaochao Sun, Daniel Ahmed

{"title":"A smart acoustic textile for health monitoring","authors":"Yingqiang Wang, Chaochao Sun, Daniel Ahmed","doi":"10.1038/s41928-025-01386-2","DOIUrl":"10.1038/s41928-025-01386-2","url":null,"abstract":"Wearable electronics, such as smart textiles, are of potential use in healthcare monitoring, human–machine interfaces and environmental analysis. However, the scalability and reliability of the technology is restricted due to challenges related to rapid material degradation, potential toxicity, high production costs and heavy computational workload. Here we report an acoustic-based smart textile technology. The approach, which we term SonoTextiles, uses piezoelectric transducers that are mounted at both ends of glass microfibres and act as transmitters and receivers of acoustic waves. The flexible glass microfibres act as acoustic waveguides and are embedded into the textile substrate, providing precise sensing by measuring wave propagation and energy loss along the fibre in response to stimuli such as touch and bending. We also use acoustic frequency selectivity and frequency-domain signal processing algorithms to enhance computational efficiency. Our acoustic textile is breathable, durable and stable under thermal fluctuations, and we show that it can be used in distributed tactile sensing, hand gesture recognition and respiratory rate monitoring. Acoustic fibre waveguides that are woven into a textile substrate can be used to create a smart textile that can sense touch and bending, with applications in distributed tactile sensing, hand gesture recognition and respiratory rate monitoring.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 6","pages":"485-495"},"PeriodicalIF":40.9,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01386-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144087942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems 用于集成系统的自修复可伸缩晶体管和电路的可重构组装

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-19 DOI: 10.1038/s41928-025-01389-z

Jaepyo Jang, Hyongsuk Choo, Sangkyu Lee, Jihyang Song, Kyuha Park, Jiyong Yoon, Duhwan Seong, Soojung An, Hyunjin Jung, Jaewon Ju, Juncheol Kang, Joohoon Kang, In Soo Kim, Mikyung Shin, Jin-Hong Park, Donghee Son

{"title":"Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems","authors":"Jaepyo Jang, Hyongsuk Choo, Sangkyu Lee, Jihyang Song, Kyuha Park, Jiyong Yoon, Duhwan Seong, Soojung An, Hyunjin Jung, Jaewon Ju, Juncheol Kang, Joohoon Kang, In Soo Kim, Mikyung Shin, Jin-Hong Park, Donghee Son","doi":"10.1038/s41928-025-01389-z","DOIUrl":"10.1038/s41928-025-01389-z","url":null,"abstract":"Self-healing soft electronic devices that can recover their mechanical and electrical properties are of use in the development of long-term wearable and implantable electronic systems. However, creating self-healing and stretchable integrated circuits is challenging due to the absence of suitable materials and sufficiently customizable assembly technology. Here we report a reconfigurable and scalable assembly method for self-healing, stretchable, active-type devices, including thin-film transistors, active-matrix arrays and logic gates. The self-healing, stretchable, thin-film transistor can easily be fabricated by transfer-printing of intrinsically soft constituent films: an insulating self-healing polymer for the gate dielectric, a semiconducting nanocomposite for the active channel and a carbon-nanotube-embedded composite for the electrodes. Our assembly method allows the thin-film transistors to be extended to wearable and implantable 5 × 5 active-matrix, soft and self-healing transistor arrays. These arrays can multiplex pressure data recorded from a 5 × 5 tactile sensor array, provide feedback control to an array of soft and self-healing optoelectronic pixels, and maintain electrical performance even when implanted in the subcutaneous tissue of a rodent model. To demonstrate user-on-demand functionality, we combined, disassembled and recombined thin-film transistors and load resistors into three different types of logic gates (inverter, NAND and NOR circuits). Wearable and implantable electronics—including an active-matrix array of thin-film transistors—can be created using transfer-printing of self-healing and stretchable films based around self-healing polymer composites with insulating, semiconducting or conducting properties.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 6","pages":"474-484"},"PeriodicalIF":40.9,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Channel and contact length scaling of two-dimensional transistors using composite metal electrodes 利用复合金属电极的二维晶体管沟道和接触长度缩放

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01382-6

Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou

{"title":"Channel and contact length scaling of two-dimensional transistors using composite metal electrodes","authors":"Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou","doi":"10.1038/s41928-025-01382-6","DOIUrl":"10.1038/s41928-025-01382-6","url":null,"abstract":"Two-dimensional semiconductors are a potential channel material for transistors with highly scaled contacted poly pitch (CPP). Total scaling of CPP requires the simultaneous reduction of channel length and contact length. However, the physical width limit of contact metals makes it difficult to form effective small-size contacts. In addition, decreasing the contact length below the transfer length induces a current crowding phenomenon, resulting in an exponential increase in contact resistance and poor device performance. Here we show that composite metal contact electrodes of gold/titanium/nickel can offer shape-preserving effects that allow the extreme scaling of contact length in two-dimensional transistors while maintaining a low contact resistance. We use the approach to create molybdenum disulfide transistors with a CPP of around 60 nm—contact length and channel length scaled to around 30 nm and transfer length scaled to under 30 nm—that exhibit on/off ratios over 108, on-state currents of around 300 μA μm−1 and off-state currents down to around 1 pA μm−1. We also fabricate arrays of all-out scaled two-dimensional transistors that exhibit low variability in key performance metrics and demonstrate their integration into advanced logic circuits. The channel and contact lengths of monolayer molybdenum disulfide field-effect transistors can be scaled to 30 nm using metal composite contacts that reduce the current crowding phenomenon.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"394-402"},"PeriodicalIF":40.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scaling the contacted poly pitch of 2D transistors 二维晶体管接触多节距的缩放

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01383-5

Xue Chen, Su-Ting Han, Ye Zhou

引用次数: 0

A programmable and self-adaptive ultrasonic wireless implant for personalized chronic pain management 一种用于个性化慢性疼痛管理的可编程和自适应超声无线植入物

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01374-6

Yushun Zeng, Chen Gong, Gengxi Lu, Jianxing Wu, Xiao Wan, Yang Yang, Jie Ji, Junhang Zhang, Runze Li, Yizhe Sun, Ziyuan Che, Chi-Feng Chang, Hsiao-Chuan Liu, Jiawen Chen, Qingqing He, Xin Sun, Ruitong Chen, Sina Khazaee Nejad, Xunan Liu, Deepthi S. Rajendran Nair, Laiming Jiang, Jun Chen, Qifa Zhou

{"title":"A programmable and self-adaptive ultrasonic wireless implant for personalized chronic pain management","authors":"Yushun Zeng, Chen Gong, Gengxi Lu, Jianxing Wu, Xiao Wan, Yang Yang, Jie Ji, Junhang Zhang, Runze Li, Yizhe Sun, Ziyuan Che, Chi-Feng Chang, Hsiao-Chuan Liu, Jiawen Chen, Qingqing He, Xin Sun, Ruitong Chen, Sina Khazaee Nejad, Xunan Liu, Deepthi S. Rajendran Nair, Laiming Jiang, Jun Chen, Qifa Zhou","doi":"10.1038/s41928-025-01374-6","DOIUrl":"10.1038/s41928-025-01374-6","url":null,"abstract":"Chronic pain management typically involves opioids, which are associated with severe side effects such as addiction. Implantable percutaneous electrical stimulators are a promising alternative approach to pain management. However, they are expensive, can cause damage during surgery and often rely on a battery power supply that must be periodically replaced. Here we report an integrated flexible ultrasound-induced wireless implantable stimulator combined with a pain detection and management system for personalized chronic pain management. Power is supplied to the stimulator by a wearable ultrasound transmitter. We classify pain stimuli from brain recordings by developing a machine learning model and program the acoustic energy from the ultrasound transmitter and therefore the intensity of electrical stimulation. We show that the implant can generate targeted, self-adaptive and quantitative electrical stimulations to the spinal cord according to the classified pain levels for chronic pain management in free-moving animal models. An implantable ultrasound-induced wireless electrical stimulator and a machine learning-based pain classifier can generate programmable, closed-loop based self-adaptive electrical stimulation to the spinal cord to manage chronic pain.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"437-449"},"PeriodicalIF":40.9,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient superconducting diodes and rectifiers for quantum circuitry 用于量子电路的高效超导二极管和整流器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-07 DOI: 10.1038/s41928-025-01375-5

Josep Ingla-Aynés, Yasen Hou, Sarah Wang, En-De Chu, Oleg A. Mukhanov, Peng Wei, Jagadeesh S. Moodera

{"title":"Efficient superconducting diodes and rectifiers for quantum circuitry","authors":"Josep Ingla-Aynés, Yasen Hou, Sarah Wang, En-De Chu, Oleg A. Mukhanov, Peng Wei, Jagadeesh S. Moodera","doi":"10.1038/s41928-025-01375-5","DOIUrl":"10.1038/s41928-025-01375-5","url":null,"abstract":"Superconducting electronics is of use in the development of energy-efficient classical and quantum computing applications. Non-reciprocal superconducting circuit elements, such as superconducting diodes, are needed for such systems, but integrating several superconducting diodes in a superconducting circuit remains a challenge. Here we report a superconducting diode bridge that consists of multiple superconducting diodes with reproducible characteristics and operating temperatures of a few Kelvin. The superconducting diodes are fabricated from thin-film bilayers of the elemental superconductor vanadium and the insulating ferromagnet europium sulfide. Four practically identical diodes are patterned on the same superconducting film to create the superconducting diode bridge. The bridge can function as a full-wave rectifier with an efficiency up to 42 ± 5%, and offers alternating current (a.c.) to direct current (d.c.) signal conversion capabilities at frequencies up to 40 kHz. A superconducting diode bridge based on superconducting diodes can function as a full-wave rectifier with an efficiency up to 42 ± 5%, and can offer alternating current to direct current signal conversion capabilities at frequencies up to 40 kHz.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"411-416"},"PeriodicalIF":40.9,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143915527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A superconducting full-wave bridge rectifier 超导全波桥式整流器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-07 DOI: 10.1038/s41928-025-01376-4

Matteo Castellani, Owen Medeiros, Alessandro Buzzi, Reed A. Foster, Marco Colangelo, Karl K. Berggren

{"title":"A superconducting full-wave bridge rectifier","authors":"Matteo Castellani, Owen Medeiros, Alessandro Buzzi, Reed A. Foster, Marco Colangelo, Karl K. Berggren","doi":"10.1038/s41928-025-01376-4","DOIUrl":"10.1038/s41928-025-01376-4","url":null,"abstract":"Superconducting thin-film electronics can offer low power consumption, fast operating speeds and interfacing capabilities with cryogenic systems such as single-photon detector arrays and quantum computing devices. However, the lack of a reliable superconducting two-terminal asymmetric device, analogous to a semiconducting diode, limits the development of power-handling circuits, which are fundamental for scaling up such technology. Here we report a robust superconducting diode with tunable polarity using the asymmetric vortex surface barrier in niobium nitride micro-bridges. The diode offers a 43% peak rectification efficiency and half-wave rectification up to 120 MHz. We also integrate several of the diodes to create a bridge rectifier circuit on a single microchip that can perform continuous full-wave rectification at up to 3 MHz and alternating to direct current conversion of a 50 MHz signal in periodic bursts with an estimated peak power efficiency of 50%. A circuit consisting of four superconducting diodes implemented in niobium nitride thin film on a single chip can achieve alternating to direct current conversion with 50 MHz signals in periodic bursts.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"417-425"},"PeriodicalIF":40.9,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143915528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0