Nature Electronics最新文献_第8页

A wide-angle compound eye in CMOS CMOS中的广角复眼

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-06 DOI: 10.1038/s41928-024-01324-8

Matthew Parker

引用次数: 0

Pixels that can focus 可以对焦的像素

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-06 DOI: 10.1038/s41928-024-01321-x

Katharina Zeissler

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Creating high-performance transistors by coating carbon nanotube arrays 通过涂覆碳纳米管阵列制造高性能晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-06 DOI: 10.1038/s41928-024-01316-8

Aaron D. Franklin

引用次数: 0

Multiscale thermal modelling with AI 基于AI的多尺度热建模

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-06 DOI: 10.1038/s41928-024-01323-9

Matthew Parker

引用次数: 0

A printed gallium oxide dielectric for 2D transistors 用于二维晶体管的印刷氧化镓电介质

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-05 DOI: 10.1038/s41928-024-01307-9

Tuan Dung Nguyen, Qing Tu, Xu Zhang, Yuxuan Cosmi Lin

引用次数: 0

A zero external magnetic field quantum standard of resistance at the 10−9 level 10−9级的零外磁场电阻量子标准

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-04 DOI: 10.1038/s41928-024-01295-w

D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer

{"title":"A zero external magnetic field quantum standard of resistance at the 10−9 level","authors":"D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer","doi":"10.1038/s41928-024-01295-w","DOIUrl":"10.1038/s41928-024-01295-w","url":null,"abstract":"The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3 show that the system can provide a zero external magnetic field quantum standard of resistance.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1111-1116"},"PeriodicalIF":33.7,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142763494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Building brain–computer interfaces with graphene 用石墨烯构建脑机接口

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-12-03 DOI: 10.1038/s41928-024-01308-8

Owain Vaughan

引用次数: 0

Build it up again 重新建立

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-27 DOI: 10.1038/s41928-024-01310-0

引用次数: 0

Integration of high-κ native oxides of gallium for two-dimensional transistors 集成高κ原生镓氧化物以制造二维晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-15 DOI: 10.1038/s41928-024-01286-x

Kongyang Yi, Wen Qin, Yamin Huang, Yao Wu, Shaopeng Feng, Qiyi Fang, Xun Cao, Ya Deng, Chao Zhu, Xilu Zou, Kah-Wee Ang, Taotao Li, Xinran Wang, Jun Lou, Keji Lai, Zhili Hu, Zhuhua Zhang, Yemin Dong, Kourosh Kalantar-Zadeh, Zheng Liu

{"title":"Integration of high-κ native oxides of gallium for two-dimensional transistors","authors":"Kongyang Yi, Wen Qin, Yamin Huang, Yao Wu, Shaopeng Feng, Qiyi Fang, Xun Cao, Ya Deng, Chao Zhu, Xilu Zou, Kah-Wee Ang, Taotao Li, Xinran Wang, Jun Lou, Keji Lai, Zhili Hu, Zhuhua Zhang, Yemin Dong, Kourosh Kalantar-Zadeh, Zheng Liu","doi":"10.1038/s41928-024-01286-x","DOIUrl":"10.1038/s41928-024-01286-x","url":null,"abstract":"The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, current techniques for depositing ultrathin metal oxide layers on two-dimensional semiconductors suffer from quality issues that can compromise transistor performance. Here, we show that an ultrathin and uniform native oxide of gallium (Ga2O3) that naturally forms on the surface of liquid metals in an ambient environment can be prepared on the surface of molybdenum disulfide (MoS2) by squeeze-printing and surface-tension-driven methods. The Ga2O3 layer possesses a high dielectric constant of around 30 and equivalent oxide thickness of around 0.4 nm. Due to the good dielectric properties and van der Waals integration, MoS2 transistors with Ga2O3 gate dielectrics exhibit a subthreshold swing down to 60 mV dec−1, an on/off ratio of 108 and a gate leakage down to around 4 × 10−7 A cm−2. Ultrathin films of gallium oxide with a dielectric constant of around 30 can be formed on the surface of molybdenum disulfide using a liquid metal-based approach and used as the gate insulator in transistors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1126-1136"},"PeriodicalIF":33.7,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142637065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wood-based electronics that fold 可折叠的木质电子产品

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-15 DOI: 10.1038/s41928-024-01302-0

Katharina Zeissler

引用次数: 0