Nature Electronics最新文献_第7页

A probe that measures more neurons across the brain 能测量大脑中更多神经元的探针

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-20 DOI: 10.1038/s41928-024-01239-4

Katharina Zeissler

引用次数: 0

Lynn Conway (1938–2024) 林恩-康威（1938-2024）

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-19 DOI: 10.1038/s41928-024-01232-x

Kenneth Shepard

引用次数: 0

Organic photodetectors that work underwater 可在水下工作的有机光电探测器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-19 DOI: 10.1038/s41928-024-01238-5

Matthew Parker

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Tuning electronic circuits close to absolute zero using quantum paraelectric varactors 利用量子准电变容器调谐接近绝对零度的电子电路

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-14 DOI: 10.1038/s41928-024-01215-y

引用次数: 0

A scalable universal Ising machine based on interaction-centric storage and compute-in-memory 基于以交互为中心的存储和内存计算的可扩展通用伊辛机

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-13 DOI: 10.1038/s41928-024-01228-7

Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang

{"title":"A scalable universal Ising machine based on interaction-centric storage and compute-in-memory","authors":"Wenshuo Yue, Teng Zhang, Zhaokun Jing, Kai Wu, Yuxiang Yang, Zhen Yang, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Yibo Lin, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang","doi":"10.1038/s41928-024-01228-7","DOIUrl":"10.1038/s41928-024-01228-7","url":null,"abstract":"Ising machines are annealing processors that can solve combinatorial optimization problems via the physical evolution of the corresponding Ising graphs. Such machines are, however, typically restricted to solving problems with certain kinds of graph topology because the spin location and connections are fixed. Here, we report a universal Ising machine that supports arbitrary Ising graph topology with reasonable hardware resources using a coarse-grained compressed sparse row method to compress and store sparse Ising graph adjacency matrices. The approach, which we term interaction-centric storage, is suitable for any kind of Ising graph and reduces the memory scaling cost. We experimentally implement the Ising machine using compute-in-memory hardware based on a 40 nm resistive random-access memory arrays. We use the machine to solve max-cut and graph colouring problems, with the latter showing a 442–1,450 factor improvement in speed and 4.1 × 105–6.0 × 105 factor reduction in energy consumption compared to a general-purpose graphics processing unit. We also use our Ising machine to solve a realistic electronic design automation problem—multiple patterning lithography layout decomposition—with 390–65,550 times speedup compared to the integer linear programming algorithm on a typical central processing unit. An Ising machine that uses a coarse-grained compressed sparse row method to store sparse Ising graph adjacency matrices can be implemented with compute-in-memory hardware based on a resistive random-access memory array to efficiently solve combinatorial optimization problems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"904-913"},"PeriodicalIF":33.7,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Priorities for net-zero web services 零净值网络服务的优先事项

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01227-8

Mohit Arora, Iain McClenaghan, Lydia Wozniak

引用次数: 0

A subdural CMOS optical device for bidirectional neural interfacing 用于双向神经接口的硬膜下 CMOS 光学设备

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01209-w

Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard

{"title":"A subdural CMOS optical device for bidirectional neural interfacing","authors":"Eric H. Pollmann, Heyu Yin, Ilke Uguz, Agrita Dubey, Katie E. Wingel, John S. Choi, Sajjad Moazeni, Yatin Gilhotra, Victoria Andino-Pavlovsky, Adam Banees, Abhinav Parihar, Vivek Boominathan, Jacob T. Robinson, Ashok Veeraraghavan, Vincent A. Pieribone, Bijan Pesaran, Kenneth L. Shepard","doi":"10.1038/s41928-024-01209-w","DOIUrl":"10.1038/s41928-024-01209-w","url":null,"abstract":"Optical neurotechnologies use light to interface with neurons and can monitor and manipulate neural activity with high spatial-temporal precision over large cortical areas. There has been considerable progress in miniaturizing microscopes for head-mounted configurations, but existing devices are bulky and their application in humans will require a more non-invasive, fully implantable form factor. Here we report an ultrathin, miniaturized subdural complementary metal–oxide–semiconductor (CMOS) optical device for bidirectional optical stimulation and recording. We use a custom CMOS application-specific integrated circuit that is capable of both fluorescence imaging and optogenetic stimulation, creating a probe with a total thickness of less than 200 µm, which is thin enough to lie entirely within the subdural space of the primate brain. We show that the device can be used for imaging and optical stimulation in a mouse model and can be used to decode reach movement speed in a non-human primate. An implantable complementary metal–oxide–semiconductor (CMOS) optical probe, which is thin enough to be placed in the subdural space of the primate brain, can be used for imaging and optical stimulation in a mouse model, and can be used to decode reach movement speed in a non-human primate.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 9","pages":"829-841"},"PeriodicalIF":33.7,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hardware accelerators based on nanotube transistors 基于纳米管晶体管的硬件加速器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01231-y

Kaixiang Kang, Lingzhi Wu, Min Li, Jianwen Zhao

引用次数: 0

An antiferromagnetic diode effect in even-layered MnBi2Te4 偶数层 MnBi2Te4 中的反铁磁二极管效应

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01219-8

Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby, Ni Ni, Liang Fu, Qiong Ma, Su-Yang Xu

{"title":"An antiferromagnetic diode effect in even-layered MnBi2Te4","authors":"Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby, Ni Ni, Liang Fu, Qiong Ma, Su-Yang Xu","doi":"10.1038/s41928-024-01219-8","DOIUrl":"10.1038/s41928-024-01219-8","url":null,"abstract":"In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic diodes that could be of use in the development of nonlinear applications. Such systems have recently been extended to non-centrosymmetric superconductors, and the superconducting diode effect has been observed. Here, we report an antiferromagnetic diode effect in a centrosymmetric crystal without directional charge separation. We observed large second-harmonic transport in a nonlinear electronic device enabled by the compensated antiferromagnetic state of even-layered MnBi2Te4. We show that this antiferromagnetic diode effect can be used to create in-plane field-effect transistors and microwave-energy-harvesting devices. We also show that electrical sum-frequency generation can be used as a tool to detect nonlinear responses in quantum materials. An antiferromagnetic diode effect was observed in a centrosymmetric crystal without directional charge separation. This effect could be used to create in-plane field-effect transistors and microwave-energy-harvesting devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 9","pages":"751-759"},"PeriodicalIF":33.7,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A scalable integration process for ultrafast two-dimensional flash memory 用于超快二维闪存的可扩展集成工艺

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-08-12 DOI: 10.1038/s41928-024-01229-6

Yongbo Jiang, Chunsen Liu, Zhenyuan Cao, Chuhang Li, Zizheng Liu, Chong Wang, Yutong Xiang, Peng Zhou

{"title":"A scalable integration process for ultrafast two-dimensional flash memory","authors":"Yongbo Jiang, Chunsen Liu, Zhenyuan Cao, Chuhang Li, Zizheng Liu, Chong Wang, Yutong Xiang, Peng Zhou","doi":"10.1038/s41928-024-01229-6","DOIUrl":"10.1038/s41928-024-01229-6","url":null,"abstract":"Data-driven computing is highly dependent on memory performance. Flash memory is presently the dominant non-volatile memory technology but suffers from limitations in terms of speed. Two-dimensional (2D) materials could potentially be used to create ultrafast flash memory. However, due to interface engineering problems, ultrafast non-volatile performance is presently restricted to exfoliated 2D materials, and there is a lack of performance demonstrations with short-channel devices. Here, we report a scalable integration process for ultrafast 2D flash memory that can be used to integrate 1,024 flash-memory devices with a yield of over 98%. We illustrate the approach with two different tunnelling barrier configurations of the memory stack (HfO2/Pt/HfO2 and Al2O3/Pt/Al2O3) and using transferred chemical vapour deposition-grown monolayer molybdenum disulfide. We also show that the channel length of the ultrafast flash memory can be scaled down to sub-10 nm, which is below the physical limit of silicon flash memory. Our sub-10 nm devices offer non-volatile information storage (up to 4 bits) and robust endurance (over 105). A scalable integration process for ultrafast two-dimensional flash memory can be used to integrate 1,024 devices with a yield of over 98%. The channel length of the devices could also be scaled down to sub-10 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"868-875"},"PeriodicalIF":33.7,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141974269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0