Nature Electronics最新文献

Analogue fast Fourier transforms for scalable and efficient signal processing 模拟快速傅里叶变换可扩展和有效的信号处理

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-19 DOI: 10.1038/s41928-026-01725-x

T. Patrick Xiao, Ben Feinberg, David K. Richardson, Matthew Cannon, Calvin Madsen, Harsha Medu, Vineet Agrawal, Matthew J. Marinella, Sapan Agarwal, Christopher H. Bennett

{"title":"Analogue fast Fourier transforms for scalable and efficient signal processing","authors":"T. Patrick Xiao, Ben Feinberg, David K. Richardson, Matthew Cannon, Calvin Madsen, Harsha Medu, Vineet Agrawal, Matthew J. Marinella, Sapan Agarwal, Christopher H. Bennett","doi":"10.1038/s41928-026-01725-x","DOIUrl":"https://doi.org/10.1038/s41928-026-01725-x","url":null,"abstract":"Edge devices are increasingly being deployed to sense and act on information from the physical world. The discrete Fourier transform is widely used to make these sensed data suitable for further processing and transmission over communication networks. Analogue in-memory computing can provide energy-efficient processing at the edge, particularly for artificial intelligence workloads, but it has not been extended to large Fourier transforms. This is because modern signal processing relies on the fast Fourier transform algorithm to reduce the computational complexity of discrete Fourier transforms, but the fast Fourier transform has remained restricted to digital processors. Here we show that the fast Fourier transform can be efficiently mapped to analogue in-memory computing systems, allowing them to scale to arbitrarily large transforms without requiring impractically large or numerous non-volatile memory arrays. We experimentally demonstrate analogue fast Fourier transforms on one-dimensional audio and two-dimensional image signals, performing precise analogue computations across up to 524k charge-trapping memory devices simultaneously within one array. We use this approach to compute analogue Fourier transforms of up to 65,536 points.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"14 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Building indium oxide transistors in three dimensions 构建三维氧化铟晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-14 DOI: 10.1038/s41928-026-01730-0

Yan Huang

引用次数: 0

Electroluminescent photoresists make LEDs easy to pattern 电致发光光刻胶使led易于定型

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-13 DOI: 10.1038/s41928-026-01729-7

Matthew Parker

引用次数: 0

Horizontal-up microfluidics for embedded chip cooling with a dielectric fluid 用介电流体进行嵌入式芯片冷却的水平向上微流体

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-07 DOI: 10.1038/s41928-026-01724-y

Wei Xiao,Zhihu Wu,Zhiyao Jiang,Yuxi Wang,Wei Wang,Bai Song

引用次数: 0

Temperature-stable high-κ oxides for miniaturized capacitors 用于小型电容器的温度稳定的高κ氧化物

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-06 DOI: 10.1038/s41928-026-01721-1

Junlei Qi, Yiying Chen, Jincheng Qin, Bin Wei, Hao Pan, Tengfei Hu, Zhengqian Fu, Yixuan Wu, Ruoyi Lv, Faqiang Zhang, Yujun Zhang, Wei Xu, Jianrong Zeng, Shangming He, Zhe Zhu, Hang Su, Zhao Yang, Zhenxiao Fu, Zhifu Liu, Ce-wen Nan, Shujun Zhang, Yuan-Hua Lin

{"title":"Temperature-stable high-κ oxides for miniaturized capacitors","authors":"Junlei Qi, Yiying Chen, Jincheng Qin, Bin Wei, Hao Pan, Tengfei Hu, Zhengqian Fu, Yixuan Wu, Ruoyi Lv, Faqiang Zhang, Yujun Zhang, Wei Xu, Jianrong Zeng, Shangming He, Zhe Zhu, Hang Su, Zhao Yang, Zhenxiao Fu, Zhifu Liu, Ce-wen Nan, Shujun Zhang, Yuan-Hua Lin","doi":"10.1038/s41928-026-01721-1","DOIUrl":"https://doi.org/10.1038/s41928-026-01721-1","url":null,"abstract":"The miniaturization of capacitive components in advanced electronics requires dielectric materials that simultaneously have a high permittivity, low loss tangent and near-zero temperature coefficient of capacitance. However, improving one property typically negatively affects the others, and the design of new dielectrics is challenging due to the vast compositional space that could be searched. Here we report a hierarchical machine learning-guided strategy that first screens oxide candidates to identify promising structural families and then optimizes local atomic features to enhance the dielectric properties. The approach identifies tungsten bronze structures, followed by targeted bismuth and germanium co-substitution. The resulting Ba4(Nd0.5Bi0.5)9.33(Ti0.99Ge0.01)18O54 ceramic had a dielectric constant of around 185, a loss tangent below 0.0005 and a temperature coefficient of ≤±30 ppm per degree Celsius. We also study the mechanism of the temperature-insensitive behaviour using in situ atomic-resolution scanning transmission electron microscopy and density functional theory analysis, and we find that strong Ge–O covalent bonds sustain off-centre polar displacements during thermal expansion. The material is used to create prototype single-layer chip capacitors with volumetric efficiency higher than leading commercial benchmarks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"24 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2026-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149087800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Universal selectors from two-dimensional materials 二维材料的通用选择器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-10-02 DOI: 10.1038/s41928-026-01723-z

Yuting Sun,Min Zhu

引用次数: 0

Identification and mitigation of errors in hole spin qubit readout 空穴自旋量子位读出误差的识别与消除

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-29 DOI: 10.1038/s41928-026-01705-1

Eoin G. Kelly, Leonardo Massai, Bence Hetényi, Marta Pita-Vidal, Alexei Orekhov, Cornelius Carlsson, Inga Seidler, Konstantinos Tsoukalas, Lisa Sommer, Michele Aldeghi, Stephen W. Bedell, Stephan Paredes, Felix J. Schupp, Matthias Mergenthaler, Andreas Fuhrer, Gian Salis, Patrick Harvey-Collard

{"title":"Identification and mitigation of errors in hole spin qubit readout","authors":"Eoin G. Kelly, Leonardo Massai, Bence Hetényi, Marta Pita-Vidal, Alexei Orekhov, Cornelius Carlsson, Inga Seidler, Konstantinos Tsoukalas, Lisa Sommer, Michele Aldeghi, Stephen W. Bedell, Stephan Paredes, Felix J. Schupp, Matthias Mergenthaler, Andreas Fuhrer, Gian Salis, Patrick Harvey-Collard","doi":"10.1038/s41928-026-01705-1","DOIUrl":"https://doi.org/10.1038/s41928-026-01705-1","url":null,"abstract":"High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radiofrequency charge sensor with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities with hole spin qubits remains challenging due to site-dependent spin anisotropies and short relaxation times during readout. Here we analyse the multiple error processes that arise during readout using a double-latched scheme in a germanium double-quantum-dot hole spin qubit system. We first investigate the spin-to-charge conversion process as a function of magnetic field orientation and configure the system to adiabatically map the (leftvert downarrow downarrow rightrangle) state to the only non-blockaded state. We reveal a strong magnetic field strength dependence of the spin relaxation rates, and minimize it by operating at low fields. We further characterize and mitigate the error processes that arise during the double-latching process. By combining a radiofrequency charge sensor, a double-latching process and optimized magnetic field parameters, we achieve a single-shot, single-shot fidelity of 97.0% for single-qubit state preparation and measurement while maintaining control of both spins under the readout conditions.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"11 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149087825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Moving quantum computing from engineered advantage to practical utility 将量子计算从工程优势推向实际应用

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-28 DOI: 10.1038/s41928-026-01717-x

He-Liang Huang

引用次数: 0

A wearable-to-implant wireless power transfer technology with variation tolerance 一种具有可变容差的可穿戴到植入的无线电力传输技术

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-25 DOI: 10.1038/s41928-026-01714-0

Seonghyeon Nam,Taewon Seo,Seungwon Yoo,Chanhui Park,Taein Kim,Min Yu,Yesol Kim,Hyejeong Kang,Dahae Yeom,Yeseul Cho,Hyeongjun Cho,Dongyun Lee,Ji Hoon Kim,Sung-Hyuk Sunwoo,Seunghwan Lee,Joonho Moon,Seung-Pyo Lee,Sanghoek Kim,Dae-Hyeong Kim

引用次数: 0

Programmable spinning of integrated circuit fibres 集成电路纤维的可编程纺丝

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-23 DOI: 10.1038/s41928-026-01712-2

Fengqiang Sun,Weichu Chen,Fen Jiang,Kaige Wang,Futeng Liu,Yida Hong,Xingbo Han,Mingbo Zhao,Yuwen Zhu,Hengda Sun,Hongzhi Wang,Gang Wang,Meifang Zhu

引用次数: 0