Nature Electronics最新文献

Channel and contact length scaling of two-dimensional transistors using composite metal electrodes 利用复合金属电极的二维晶体管沟道和接触长度缩放

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01382-6

Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou

{"title":"Channel and contact length scaling of two-dimensional transistors using composite metal electrodes","authors":"Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou","doi":"10.1038/s41928-025-01382-6","DOIUrl":"https://doi.org/10.1038/s41928-025-01382-6","url":null,"abstract":"Two-dimensional semiconductors are a potential channel material for transistors with highly scaled contacted poly pitch (CPP). Total scaling of CPP requires the simultaneous reduction of channel length and contact length. However, the physical width limit of contact metals makes it difficult to form effective small-size contacts. In addition, decreasing the contact length below the transfer length induces a current crowding phenomenon, resulting in an exponential increase in contact resistance and poor device performance. Here we show that composite metal contact electrodes of gold/titanium/nickel can offer shape-preserving effects that allow the extreme scaling of contact length in two-dimensional transistors while maintaining a low contact resistance. We use the approach to create molybdenum disulfide transistors with a CPP of around 60 nm—contact length and channel length scaled to around 30 nm and transfer length scaled to under 30 nm—that exhibit on/off ratios over 108, on-state currents of around 300 μA μm−1 and off-state currents down to around 1 pA μm−1. We also fabricate arrays of all-out scaled two-dimensional transistors that exhibit low variability in key performance metrics and demonstrate their integration into advanced logic circuits.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"38 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scaling the contacted poly pitch of 2D transistors 二维晶体管接触多节距的缩放

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01383-5

Xue Chen, Su-Ting Han, Ye Zhou

引用次数: 0

A programmable and self-adaptive ultrasonic wireless implant for personalized chronic pain management 一种用于个性化慢性疼痛管理的可编程和自适应超声无线植入物

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01374-6

Yushun Zeng, Chen Gong, Gengxi Lu, Jianxing Wu, Xiao Wan, Yang Yang, Jie Ji, Junhang Zhang, Runze Li, Yizhe Sun, Ziyuan Che, Chi-Feng Chang, Hsiao-Chuan Liu, Jiawen Chen, Qingqing He, Xin Sun, Ruitong Chen, Sina Khazaee Nejad, Xunan Liu, Deepthi S. Rajendran Nair, Laiming Jiang, Jun Chen, Qifa Zhou

{"title":"A programmable and self-adaptive ultrasonic wireless implant for personalized chronic pain management","authors":"Yushun Zeng, Chen Gong, Gengxi Lu, Jianxing Wu, Xiao Wan, Yang Yang, Jie Ji, Junhang Zhang, Runze Li, Yizhe Sun, Ziyuan Che, Chi-Feng Chang, Hsiao-Chuan Liu, Jiawen Chen, Qingqing He, Xin Sun, Ruitong Chen, Sina Khazaee Nejad, Xunan Liu, Deepthi S. Rajendran Nair, Laiming Jiang, Jun Chen, Qifa Zhou","doi":"10.1038/s41928-025-01374-6","DOIUrl":"https://doi.org/10.1038/s41928-025-01374-6","url":null,"abstract":"Chronic pain management typically involves opioids, which are associated with severe side effects such as addiction. Implantable percutaneous electrical stimulators are a promising alternative approach to pain management. However, they are expensive, can cause damage during surgery and often rely on a battery power supply that must be periodically replaced. Here we report an integrated flexible ultrasound-induced wireless implantable stimulator combined with a pain detection and management system for personalized chronic pain management. Power is supplied to the stimulator by a wearable ultrasound transmitter. We classify pain stimuli from brain recordings by developing a machine learning model and program the acoustic energy from the ultrasound transmitter and therefore the intensity of electrical stimulation. We show that the implant can generate targeted, self-adaptive and quantitative electrical stimulations to the spinal cord according to the classified pain levels for chronic pain management in free-moving animal models.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"61 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient superconducting diodes and rectifiers for quantum circuitry 用于量子电路的高效超导二极管和整流器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-07 DOI: 10.1038/s41928-025-01375-5

Josep Ingla-Aynés, Yasen Hou, Sarah Wang, En-De Chu, Oleg A. Mukhanov, Peng Wei, Jagadeesh S. Moodera

引用次数: 0

A superconducting full-wave bridge rectifier 超导全波桥式整流器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-07 DOI: 10.1038/s41928-025-01376-4

Matteo Castellani, Owen Medeiros, Alessandro Buzzi, Reed A. Foster, Marco Colangelo, Karl K. Berggren

引用次数: 0

Author Correction: Vapour-deposited high-performance tin perovskite transistors 作者更正：气相沉积高性能锡钙钛矿晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01394-2

Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh

引用次数: 0

Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics 亚化学计量氧化锆作为溶液处理的可重构电子介质

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01379-1

Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang

{"title":"Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics","authors":"Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang","doi":"10.1038/s41928-025-01379-1","DOIUrl":"https://doi.org/10.1038/s41928-025-01379-1","url":null,"abstract":"Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal–oxide–semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric and molybdenum disulfide (MoS2) as a semiconductor layer. The ZrO2-x/MoS2 heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm2 V−1 s−1 and current on/off ratio of up to 106. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 × 104. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 105 A W−1, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"11 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scaling up superconducting quantum computers 扩大超导量子计算机

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-05 DOI: 10.1038/s41928-025-01381-7

Anthony Megrant, Yu Chen

引用次数: 0

A spotlight on optoelectronics 光电子学的焦点

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01387-1

引用次数: 0

Vapour-deposited high-performance tin perovskite transistors 气相沉积高性能锡钙钛矿晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01380-8

Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh

{"title":"Vapour-deposited high-performance tin perovskite transistors","authors":"Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh","doi":"10.1038/s41928-025-01380-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01380-8","url":null,"abstract":"Solution-processed tin (Sn2+)-halide perovskites can be used to create p-channel thin-film transistors (TFTs) with performance levels comparable with commercial low-temperature polysilicon technology. However, high-quality perovskite film deposition using industry-compatible production techniques remains challenging. Here we report the fabrication of p-channel Sn2+-halide perovskite TFTs using a thermal evaporation approach with inorganic caesium tin iodide (CsSnI3). We use lead chloride (PbCl2) as a reaction initiator that triggers solid-state reactions of the as-evaporated perovskite compounds. This promotes the conversion of dense and uniform perovskite films, and also modulates the intrinsically high hole density of the CsSnI3 perovskite channels. Our optimized TFTs exhibit average hole field-effect mobilities of around 33.8 cm2 V−1 s−1, on/off current ratios of around 108, and large-area fabrication uniformity. The devices also exhibit improved stability compared with solution-deposited devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"42 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143880393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0