Nature Electronics最新文献

New flavours for ingestible sensors 可消化传感器的新口味

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-25 DOI: 10.1038/s41928-025-01475-2

引用次数: 0

Thermally stable β-tungsten for spin–orbit torque magnetic random-access memory 用于自旋轨道转矩磁随机存取存储器的热稳定β-钨

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-19 DOI: 10.1038/s41928-025-01435-w

引用次数: 0

An analogue computer for AI and optimization 用于人工智能和优化的模拟计算机

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-19 DOI: 10.1038/s41928-025-01473-4

Katharina Zeissler

引用次数: 0

Making black phosphorus nanoribbons from bulk 用块状材料制造黑磷纳米带

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-16 DOI: 10.1038/s41928-025-01472-5

Matthew Parker

引用次数: 0

Boron nitride memristors built directly on CMOS 氮化硼忆阻器直接建立在CMOS上

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-16 DOI: 10.1038/s41928-025-01471-6

Yan Huang

引用次数: 0

Probabilistic computers based on digital logic and magnetic nanodevices 基于数字逻辑和磁性纳米器件的概率计算机

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-15 DOI: 10.1038/s41928-025-01458-3

Brandon Zink

引用次数: 0

Amorphous indium tin oxide transistors for power amplification above 10 GHz 用于功率放大10 GHz以上的非晶铟锡氧化物晶体管

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-15 DOI: 10.1038/s41928-025-01447-6

Qianlan Hu, Shenwu Zhu, Yuzhe Zhu, Chengru Gu, Shiyuan Liu, Ru Huang, Yanqing Wu

{"title":"Amorphous indium tin oxide transistors for power amplification above 10 GHz","authors":"Qianlan Hu, Shenwu Zhu, Yuzhe Zhu, Chengru Gu, Shiyuan Liu, Ru Huang, Yanqing Wu","doi":"10.1038/s41928-025-01447-6","DOIUrl":"10.1038/s41928-025-01447-6","url":null,"abstract":"Amorphous oxide semiconductors could be used as thin channel materials in future back-end-of-line-compatible electronics. However, thin body amorphous materials suffer from Joule heating due to the strong scattering of electrons and phonons from extensive local disorder, which can lead to device failure in high-speed power-intensive applications. Here we show that the electrical and thermal transport properties of amorphous indium tin oxide can be enhanced using a silicon carbide substrate. Using this approach, we create top-gate transistors that have a channel length of 120 nm and exhibit negligible performance degradation under high electric fields and temperatures of up to 125 °C. We show that the devices can offer a cutoff frequency of 103 GHz and a maximum oscillation frequency of 125 GHz. Furthermore, our indium tin oxide power amplifiers provide a high output power density of 0.69 W mm−1 and a power-added efficiency of 24.1% at 12 GHz. The electrical and thermal transport properties of amorphous indium tin oxide can be enhanced by using a silicon carbide substrate, leading to indium tin oxide power amplifiers with an output power density of 0.69 W mm−1 and a power-added efficiency of 24.1% at 12 GHz.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 9","pages":"803-809"},"PeriodicalIF":40.9,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145059636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ingestible sensors for redox balance 用于氧化还原平衡的可摄取传感器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-15 DOI: 10.1038/s41928-025-01459-2

Khalil B. Ramadi

引用次数: 0

Perovskites for next-generation colour conversion displays 用于下一代彩色转换显示器的钙钛矿

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-09-12 DOI: 10.1038/s41928-025-01456-5

Jihun Kim, Eui Dae Jung, Jeonghwan You, Jeongjae Lee, Bum Chan Park, Henry J. Snaith, Richard H. Friend, Changsoon Cho, Bo Ram Lee

引用次数: 0

Gate stack engineering of two-dimensional transistors 二维晶体管的栅极堆栈工程

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-09-10 DOI: 10.1038/s41928-025-01448-5

Yeon Ho Kim, Donghun Lee, Woong Huh, Jaeho Lee, Donghyun Lee, Gunuk Wang, Jaehyun Park, Daewon Ha, Chul-Ho Lee

{"title":"Gate stack engineering of two-dimensional transistors","authors":"Yeon Ho Kim, Donghun Lee, Woong Huh, Jaeho Lee, Donghyun Lee, Gunuk Wang, Jaehyun Park, Daewon Ha, Chul-Ho Lee","doi":"10.1038/s41928-025-01448-5","DOIUrl":"10.1038/s41928-025-01448-5","url":null,"abstract":"Gate stack engineering has helped enable aggressive device scaling in silicon complementary metal–oxide–semiconductor technology. Two-dimensional (2D) materials are a potential replacement for silicon in next-generation electronics. However, creating gate stacks that are capable of effective and reliable channel control with such materials is inherently challenging owing to the lack of compatible dielectrics and fabrication methods. Here we explore the development of gate stack engineering technologies for two-dimensional transistors. We benchmark key performance metrics for two-dimensional metal–oxide–semiconductor gate stacks against current silicon-based technologies, as well as the targets set by the International Roadmap for Devices and Systems. We also highlight recent advances in ferroelectric-embedded gate stacks, which offer additional functionalities and could be of use in the development of high-speed non-volatile memories and logic-in-memory devices, as well as low-power transistors. Finally, we consider the technical challenges that need to be addressed to develop advanced electronic technologies based on two-dimensional transistors. This Review examines the development of gate stack engineering technologies for two-dimensional (2D) transistors, benchmarking key performance metrics for such gate stacks against current silicon-based technologies and exploring the challenges that need to be addressed in order to create advanced electronic technologies based on 2D transistors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 9","pages":"770-783"},"PeriodicalIF":40.9,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145025908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0