{"title":"Lighting up the clock rate in electronics","authors":"Victor Torres-Company","doi":"10.1038/s41928-025-01367-5","DOIUrl":"https://doi.org/10.1038/s41928-025-01367-5","url":null,"abstract":"On-chip microcombs could be used to synchronize optoelectronic systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"107 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modulation of the anomalous Hall angle in a magnetic topological semimetal","authors":"Jinying Yang, Yanxing Shang, Xingchen Liu, Yibo Wang, Xuebin Dong, Qingqi Zeng, Meng Lyu, Shen Zhang, Yang Liu, Binbin Wang, Hongxiang Wei, Yizheng Wu, Stuart Parkin, Gangqin Liu, Claudia Felser, Enke Liu, Baogen Shen","doi":"10.1038/s41928-025-01364-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01364-8","url":null,"abstract":"<p>The anomalous Hall angle (<i>θ</i><sup>A</sup>) is a measure of the efficiency of converting a longitudinal driving current into a transverse spin-polarized Hall current. In sensors based on the anomalous Hall effect, a large anomalous Hall angle can improve the sensitivity of magnetic field detection. However, the modulation of this angle is challenging, and magnetic materials typically have low angles of 0.1°–3°. Here we report the modulation of <i>θ</i><sup>A</sup> in the magnetic Weyl semimetal Co<sub>3</sub>Sn<sub>2</sub>S<sub>2</sub>. We show that the anomalous Hall angle parameter tan<i>θ</i><sup>A</sup> can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity. We use this scheme to demonstrate the modulation of tan<i>θ</i><sup>A</sup> up to a magnitude of 0.46, corresponding to an angle of around 25°. We further fabricate anomalous Hall devices using Fe-doped Co<sub>3</sub>Sn<sub>2</sub>S<sub>2</sub> single-crystalline nanoflakes and demonstrate a Hall sensitivity of 7,028 ± 341 μΩ cm T<sup>–1</sup> and a magnetic field detectability of 23.5 ± 1.7 nT Hz<sup>–0.5</sup> at 1 Hz.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"32 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Terahertz wireless interconnects for cryogenic electronics","authors":"","doi":"10.1038/s41928-025-01356-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01356-8","url":null,"abstract":"In scaling quantum computers to millions of qubits, the large mass of metallic connecting cables would create unacceptable heat loads on cryogenic cooling systems. Instead, a highly efficient wireless interconnect approach — using complementary metal–oxide–semiconductor (CMOS) terahertz transceivers with backscatter communication schemes — could provide a high-capacity, low-heat interconnect solution for future cryogenic electronic hardware.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"96 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seung-Rok Kim, Yifei Zhan, Noelle Davis, Suhrith Bellamkonda, Liam Gillan, Elina Hakola, Jussi Hiltunen, Ali Javey
{"title":"Electrodermal activity as a proxy for sweat rate monitoring during physical and mental activities","authors":"Seung-Rok Kim, Yifei Zhan, Noelle Davis, Suhrith Bellamkonda, Liam Gillan, Elina Hakola, Jussi Hiltunen, Ali Javey","doi":"10.1038/s41928-025-01365-7","DOIUrl":"https://doi.org/10.1038/s41928-025-01365-7","url":null,"abstract":"<p>Electrodermal activity has long been used for mental activity monitoring by measuring skin conductance at specific locations, such as fingertips, with high sweat gland density. However, electrodermal activity has not been considered useful for physical activity monitoring, where large sweat volumes are generated, resulting in the accumulation of sweat at the skin–electrode interface and, thus, preventing further dynamic response to sweating events. Here we show that electrodermal activity can be used as a proxy for sweat loss measurement under both low and high physical activity levels. We use wearable sweat sensors that consist of water-permeable electrodes and microfluidic-based sweat analysers, and show that skin conductance is proportional to the instantaneous sweat loss. We demonstrate that sweat loss during exercise can be estimated by integrating skin conductance over time, which can be applied to assess the body hydration status of exercisers. From multisite measurements of skin conductance, we show that the wrist, forearm and upper arm are reflective of physical activity levels, whereas the finger is indicative of mental activity. Simultaneous measurement of two different sites selectively decouples mental and physical activities.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"72 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma
{"title":"Publisher Correction: A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors","authors":"Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma","doi":"10.1038/s41928-025-01378-2","DOIUrl":"https://doi.org/10.1038/s41928-025-01378-2","url":null,"abstract":"<p>Correction to: <i>Nature Electronics</i> https://doi.org/10.1038/s41928-025-01357-7, published online 10 March 2025.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"216 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In search of solutions for 2D synthesis","authors":"","doi":"10.1038/s41928-025-01372-8","DOIUrl":"10.1038/s41928-025-01372-8","url":null,"abstract":"Solution-processed 2D materials could be of use in the development of large-area electronic applications, but the performance of devices based on such materials remains an issue.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"193-193"},"PeriodicalIF":33.7,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-025-01372-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143717509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}