Nature Electronics最新文献

The development of general-purpose brain-inspired computing 通用大脑启发计算的发展

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-07 DOI: 10.1038/s41928-024-01277-y

Weihao Zhang, Songchen Ma, Xinglong Ji, Xue Liu, Yuqing Cong, Luping Shi

引用次数: 0

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials 利用二维材料的置换掺杂和厚度控制实现高性能 p 型场效应晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-06 DOI: 10.1038/s41928-024-01265-2

Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Emanuel Sanchez, Divya Somvanshi, Zdenek Sofer, Mauricio Terrones, Yang Yang, Saptarshi Das

{"title":"High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials","authors":"Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Emanuel Sanchez, Divya Somvanshi, Zdenek Sofer, Mauricio Terrones, Yang Yang, Saptarshi Das","doi":"10.1038/s41928-024-01265-2","DOIUrl":"https://doi.org/10.1038/s41928-024-01265-2","url":null,"abstract":"In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide—achieved through substitutional doping with vanadium, niobium and tantalum—can reduce the contact resistance to as low as 95 Ω µm in multilayers. This, though, comes at the cost of poor electrostatic control, and we find that the doping effectiveness—and its impact on electrostatic control—is reduced in thinner layers due to strong quantum confinement effects. We, therefore, develop a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A seamless graphene spin valve based on proximity to van der Waals magnet Cr2Ge2Te6 基于接近范德华磁体 Cr2Ge2Te6 的无缝石墨烯自旋阀

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-06 DOI: 10.1038/s41928-024-01267-0

Haozhe Yang, Marco Gobbi, Franz Herling, Van Tuong Pham, Francesco Calavalle, Beatriz Martín-García, Albert Fert, Luis E. Hueso, Fèlix Casanova

{"title":"A seamless graphene spin valve based on proximity to van der Waals magnet Cr2Ge2Te6","authors":"Haozhe Yang, Marco Gobbi, Franz Herling, Van Tuong Pham, Francesco Calavalle, Beatriz Martín-García, Albert Fert, Luis E. Hueso, Fèlix Casanova","doi":"10.1038/s41928-024-01267-0","DOIUrl":"https://doi.org/10.1038/s41928-024-01267-0","url":null,"abstract":"Pristine graphene is potentially an ideal medium for transporting spin information. Proximity effects—where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions—can also be used in graphene to generate and detect spins by acquiring spin–orbit coupling or magnetic exchange coupling. However, the development of seamless spintronic devices that are based only on proximity effects remains challenging. Here we report a two-dimensional graphene spin valve that is enabled by proximity to the van der Waals magnet Cr2Ge2Te6. Spin precession measurements show that the graphene acquires both spin–orbit coupling and magnetic exchange coupling when interfaced with the Cr2Ge2Te6. This leads to spin generation by both electrical spin injection and the spin Hall effect, while retaining spin transport. The simultaneous presence of spin–orbit coupling and magnetic exchange coupling also leads to a sizeable anomalous Hall effect.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A single-transducer echomyography system for monitoring muscle activity 用于监测肌肉活动的单传感器超声造影系统

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-05 DOI: 10.1038/s41928-024-01273-2

引用次数: 0

Scientific challenges in governing military AI 管理军事人工智能的科学挑战

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-04 DOI: 10.1038/s41928-024-01275-0

WooJung Jon

引用次数: 0

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 具有极端量子约束的按比例垂直纳米线异质结隧穿晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-04 DOI: 10.1038/s41928-024-01279-w

Yanjie Shao, Marco Pala, Hao Tang, Baoming Wang, Ju Li, David Esseni, Jesús A. del Alamo

引用次数: 0

Energy-efficient computing at cryogenic temperatures 低温条件下的高能效计算

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-31 DOI: 10.1038/s41928-024-01278-x

Cezar Zota, Alberto Ferraris, Eunjung Cha, Mridula Prathapan, Peter Mueller, Effendi Leobandung

引用次数: 0

A wearable echomyography system based on a single transducer 基于单个传感器的可穿戴超声造影系统

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-31 DOI: 10.1038/s41928-024-01271-4

Xiaoxiang Gao, Xiangjun Chen, Muyang Lin, Wentong Yue, Hongjie Hu, Siyu Qin, Fangao Zhang, Zhiyuan Lou, Lu Yin, Hao Huang, Sai Zhou, Yizhou Bian, Xinyi Yang, Yangzhi Zhu, Jing Mu, Xinyu Wang, Geonho Park, Chengchangfeng Lu, Ruotao Wang, Ray S. Wu, Joseph Wang, Jinghong Li, Sheng Xu

{"title":"A wearable echomyography system based on a single transducer","authors":"Xiaoxiang Gao, Xiangjun Chen, Muyang Lin, Wentong Yue, Hongjie Hu, Siyu Qin, Fangao Zhang, Zhiyuan Lou, Lu Yin, Hao Huang, Sai Zhou, Yizhou Bian, Xinyi Yang, Yangzhi Zhu, Jing Mu, Xinyu Wang, Geonho Park, Chengchangfeng Lu, Ruotao Wang, Ray S. Wu, Joseph Wang, Jinghong Li, Sheng Xu","doi":"10.1038/s41928-024-01271-4","DOIUrl":"https://doi.org/10.1038/s41928-024-01271-4","url":null,"abstract":"Wearable electromyography devices can detect muscular activity for health monitoring and body motion tracking, but this approach is limited by weak and stochastic signals with a low spatial resolution. Alternatively, echomyography can detect muscle movement using ultrasound waves, but typically relies on complex transducer arrays, which are bulky, have high power consumption and can limit user mobility. Here we report a fully integrated wearable echomyography system that consists of a customized single transducer, a wireless circuit for data processing and an on-board battery for power. The system can be attached to the skin and provides accurate long-term wireless monitoring of muscles. To illustrate its capabilities, we use this system to detect the activity of the diaphragm, which allows the recognition of different breathing modes. We also develop a deep learning algorithm to correlate the single-transducer radio-frequency data from forearm muscles with hand gestures to accurately and continuously track 13 hand joints with a mean error of only 7.9°.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors 高迁移率 n 型二硫化钼晶体管中的分数量子霍尔相

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-30 DOI: 10.1038/s41928-024-01274-1

Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han

{"title":"Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors","authors":"Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han","doi":"10.1038/s41928-024-01274-1","DOIUrl":"https://doi.org/10.1038/s41928-024-01274-1","url":null,"abstract":"Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin–orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm2 V−1 s−1 and quantum mobilities of over 3,000 cm2 V−1 s−1 in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates 基于插层过渡金属二卤化物的发光二极管，在高发电率下可抑制效率衰减

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-28 DOI: 10.1038/s41928-024-01264-3

Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni

{"title":"Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates","authors":"Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni","doi":"10.1038/s41928-024-01264-3","DOIUrl":"https://doi.org/10.1038/s41928-024-01264-3","url":null,"abstract":"The capabilities of light-emitting diodes (LEDs) based on two-dimensional materials are restricted by efficiency roll-off, which is induced by exciton–exciton annihilation, at high current densities. Dielectric or strain engineering can be used to reduce exciton–exciton annihilation rates in monolayer transition metal dichalcogenides, but achieving electroluminescence in two-dimensional LEDs without efficiency roll-off is challenging. Here we describe pulsed LEDs that are based on intercalated transition metal dichalcogenides and offer suppressed exciton–exciton annihilation at high exciton generation rates. We intercalate oxygen plasma into few-layer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) to create LEDs with a suppressed efficiency roll-off in both photo-excitation and electro-injection luminescence at all exciton densities up to around 1020 cm−2 s−1. We attribute this suppression to a reduced exciton Bohr radius and exciton diffusion coefficient, as extracted from optical spectroscopy measurements. LEDs based on intercalated MoS2 and WS2 operate at maximum external quantum efficiencies of 0.02% and 0.78%, respectively, at a generation rate of around 1020 cm−2 s−1.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142519266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0