Mahnaz Islam, Stephanie M. Bohaichuk, Timothy D. Brown, Sangheon Oh, Christopher Perez, Chengyang Zhang, Tae Joon Park, Minseong Park, A. Alec Talin, Shriram Ramanathan, Suhas Kumar, Eric Pop
{"title":"An electro-optical Mott neuron based on niobium dioxide","authors":"Mahnaz Islam, Stephanie M. Bohaichuk, Timothy D. Brown, Sangheon Oh, Christopher Perez, Chengyang Zhang, Tae Joon Park, Minseong Park, A. Alec Talin, Shriram Ramanathan, Suhas Kumar, Eric Pop","doi":"10.1038/s41928-025-01406-1","DOIUrl":"https://doi.org/10.1038/s41928-025-01406-1","url":null,"abstract":"<p>Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO<sub>2</sub>), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO<sub>2</sub>. Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"14 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144715379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A policy update","authors":"","doi":"10.1038/s41928-025-01441-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01441-y","url":null,"abstract":"Submissions to Nature Electronics that are published will now have the option to be accompanied by the referee reports and the author response letters.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"57 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144710628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A qubit update","authors":"","doi":"10.1038/s41928-025-01440-z","DOIUrl":"https://doi.org/10.1038/s41928-025-01440-z","url":null,"abstract":"The field of quantum computing has advanced rapidly in 2025, but the technology still faces substantial challenges in terms of scaling up.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"705 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144710576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A depth sensor with equivalent time sampling","authors":"Matthew Parker","doi":"10.1038/s41928-025-01427-w","DOIUrl":"https://doi.org/10.1038/s41928-025-01427-w","url":null,"abstract":"<p>The sensor consists of an upper chip containing a 105 × 1,572 array of single-photon avalanche diodes and a lower chip containing the pixel readout circuit. The output of this circuit is sampled using multiple clocks with different phases, a process called equivalent time sampling, which improves the measurement accuracy without increasing the amount of data. The sampled data are used to create a histogram from which depth information can be extracted using an on-chip echo analysis circuit that reduces the final data size by up to 98%.</p><p>With this aggressive reduction in output data, and by processing distance information on the chip, a sampling rate of 25 million points per second can be achieved. The LiDAR system exhibits a horizontal and vertical field of view of 120° and 26°, respectively, with an angular resolution of 0.05° and a frame rate of 20 frames per second.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"30 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ribbon transistors that scale","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01425-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01425-y","url":null,"abstract":"<p>The researchers — who are based at the Intel Foundry in Oregon, USA — developed a 180 nm cell height library for high-performance applications and a 160 nm cell height library for low-power applications. The contact resistance and device capacitance were reduced by integrating Backside PowerVia (Intel’s backside power delivery technology) and optimizing the transistor front side. Extreme-ultraviolet direct print patterning was used to reduce the total mask count.</p><p>Fischer and colleagues show that Intel 18A can perform better than previous technology based on fin field-effect transistors, Intel 3, with a frequency improvement of 18% and a power decrease of 38% at an iso-power of 0.75 V (and 25% and 36%, respectively, at 1.1 V). The technology also provides a 30% improvement in density scaling, with a bitcell area of 0.021 mm<sup>2</sup> for high-density cells and 0.023 mm<sup>2</sup> for high-current cells.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"115 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144678144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Making competitive p-channels from monolayer tungsten diselenide","authors":"Yan Huang","doi":"10.1038/s41928-025-01430-1","DOIUrl":"https://doi.org/10.1038/s41928-025-01430-1","url":null,"abstract":"<p>The researchers — who are based at the Taiwan Semiconductor Manufacturing Company, National Taiwan University, and National Yang Ming Chiao Tung University — developed a systematic approach to optimize channel interfaces and improve transistor performance. To mitigate variability caused by the transfer process, the substrate was pre-treated to make the dielectric interface hydrophilic and then cleaned to remove any residue. A sacrificial contact buffer layer was applied to the WSe<sub>2</sub> surface to prevent lithography-induced defects, and a contact liner was inserted between WSe<sub>2</sub> and palladium electrodes to reduce Fermi level pinning (details on the liner material were not given). The transistors have a 4-nm-thick layer of hafnium oxide (HfO<sub><i>x</i></sub>) as the dielectric. After a free-radical post-treatment and passivation, the resulting devices exhibited an on-current of 400 μA μm<sup>−1</sup> at a drain voltage of −1 V, a subthreshold swing of 72 mV per decade, an on/off ratio of 10<sup>7</sup> and minimal hysteresis. They also showed no performance degradation after one week of air exposure.</p><p><b>Original reference:</b> Performance step-up in PMOS with monolayer WSe<sub>2</sub> channel. In <i>Proc. 2025 IEEE Symposium on VLSI Technology & Circuits</i> (2025); https://www.vlsisymposium.org/</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"24 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A stack of silicon meshes for 3D organoid interfacing","authors":"Yan Huang","doi":"10.1038/s41928-025-01429-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01429-8","url":null,"abstract":"<p>The researchers — who are based at imec and KU Leuven — fabricated a stack of four suspended silicon meshes with 256 island electrodes via 130 nm complementary metal–oxide–semiconductor (CMOS) technology and deep reactive-ion etching. Multiplexing and circuit reuse techniques were used to implement different working modes. The MEA showed a low input-referred noise of 9.1 ± 1.5 μV<sub>rms</sub> (0.3–10 kHz) and power consumption of 11.3 μW per island. An in vitro demonstration in cultured cardiomyocytes showed that the system could record intracellular activity under voltage stimulation and track network propagation.</p><p><b>Original reference:</b> An active silicon perforated MEA for seamless 3D organoid interfacing with low-noise, scalable multimodal electrophysiology. In <i>Proc. 2025 IEEE Symposium on VLSI Technology & Circuits</i> (2025); https://www.vlsisymposium.org/</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"52 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanosheet FETs with low leakage","authors":"Matthew Parker","doi":"10.1038/s41928-025-01428-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01428-9","url":null,"abstract":"<p>The researchers — who are based at TSMC Corporate Research, National Yang Ming Chiao Tung University, and the University of California, San Diego — could vary the bandgap from around 0.6 eV to 1.0 eV by using different CNT solutions. With a selected solution, nanotube nanosheet FETs were created that have nanotube pitches of around 3–4 nm and which exhibited an on-current of 900 μA μm<sup>−1</sup>, leakage current of around 20 pA μm<sup>−1</sup> and a subthreshold slope of 93 mV dec<sup>−1</sup>, with the leakage being around three orders of magnitude lower than previously reported nanotube FETs. In addition, the researchers calculate that if the CNT purity is further improved, n-type FETs with performance matching their p-type counterparts could be created.</p><p><b>Original reference:</b> 1000× lower leakage in high-performance carbon nanotube nanosheet FETs. In <i>Proc. 2025 IEEE Symposium on VLSI Technology & Circuits</i> (2025); https://www.vlsisymposium.org/</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"25 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A phased-array transceiver in 65 nm CMOS for 6G","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01426-x","DOIUrl":"https://doi.org/10.1038/s41928-025-01426-x","url":null,"abstract":"<p>The researchers — who are based at the Institute of Science Tokyo, Panasonic Industry, Panasonic System Network R&D Lab, and Shinko Electric Industries — replace the oscillator buffer, which is typically used in such systems and has high power and chip area demands, with an injection-locked tripling phase shifter made using 65 nm node complementary metal–oxide–semiconductor (CMOS) technology. In addition to operating as a phase shifter, the device also functions as a frequency tripler. It is directly connected to the mixer to maximize the voltage amplitude and mixer input. An eight-element module with two transceiver integrated circuits, each with four transceivers, is shown to have a maximum data rate of 56 Gbps at a communication distance of 0.3 m and a 26 dBm effective radiated power at 154 GHz, while having a power consumption of up to 150 mW per element and an area of 8.4 mm × 20 mm.</p><p><b>Original reference:</b> A 150 GHz high-power-density phased-array transceiver in 65nm CMOS for 6G UE module. In <i>Proc. 2025 IEEE Symposium on VLSI Technology & Circuits</i> (2025); https://www.vlsisymposium.org/</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"12 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144677608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aniek Even, Roseanne Minderhoud, Tom Torfs, Francesca Leonardi, Arjan van Heusden, Ria Sijabat, Dimitrios Firfilionis, Ivan Dario Castro Miller, Ramzy Rammouz, Tobias Teichmann, Ruben van Bergen, Günter Vermeeren, Edoardo Capuano, Rachel Armstrong, Klaus Mathwig, Sonja de Vries, Annelies Goris, Nick Van Helleputte, Guido Hooiveld, Chris Van Hoof
{"title":"Measurements of redox balance along the gut using a miniaturized ingestible sensor","authors":"Aniek Even, Roseanne Minderhoud, Tom Torfs, Francesca Leonardi, Arjan van Heusden, Ria Sijabat, Dimitrios Firfilionis, Ivan Dario Castro Miller, Ramzy Rammouz, Tobias Teichmann, Ruben van Bergen, Günter Vermeeren, Edoardo Capuano, Rachel Armstrong, Klaus Mathwig, Sonja de Vries, Annelies Goris, Nick Van Helleputte, Guido Hooiveld, Chris Van Hoof","doi":"10.1038/s41928-025-01411-4","DOIUrl":"https://doi.org/10.1038/s41928-025-01411-4","url":null,"abstract":"<p>Redox balance—the equilibrium between oxidants and reductants—is a key modulator of a healthy gut and consequently overall well-being. Excess reactive species, resulting in oxidative stress, are linked to deleterious processes including inflammation and microbiome dysbiosis. However, a lack of suitable in vivo methods has restricted measurements of redox balance in the human gut. Here we report a miniaturized ingestible sensor that is equipped with an oxidation–reduction potential sensor, an electrochemical reference electrode and pH and temperature sensors. We preclinically validate our wireless gastrointestinal (GI) smart module (GISMO) in GI fluids and an animal model and report in-human measurements in 15 healthy individuals. Our high-temporal-resolution data, measured every 20 s, reveal consistent profiles from an oxidative environment in the stomach to a strongly reducing environment in the large intestine. This non-intrusive method has the potential to advance (GI) disease monitoring and offer insights into the gut microbiome.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"16 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144639825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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