Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton
{"title":"Rapid cryogenic characterization of 1,024 integrated silicon quantum dot devices","authors":"Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton","doi":"10.1038/s41928-024-01304-y","DOIUrl":"https://doi.org/10.1038/s41928-024-01304-y","url":null,"abstract":"<p>As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots can potentially address these challenges given their control fidelities and potential for compatibility with large-scale integration. Here we report the integration of 1,024 independent silicon quantum dot devices with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, allowing characteristic data across the quantum dot array to be acquired and analysed in under 10 min. This is achieved by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, characterized by a typical signal-to-noise voltage ratio in excess of 75 for an integration time of 3.18 μs. We extract key quantum dot parameters by automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room-temperature transistor behaviour that could be used as a proxy for in-line process monitoring.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"17 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142916836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rongzhou Lin, Chengmei Jiang, Sippanat Achavananthadith, Xin Yang, Hashina Parveen Anwar Ali, Jianfeng Ping, Yuxin Liu, Xianmin Zhang, Benjamin C. K. Tee, Yong Lin Kong, John S. Ho
{"title":"Soft electronics based on particle engulfment printing","authors":"Rongzhou Lin, Chengmei Jiang, Sippanat Achavananthadith, Xin Yang, Hashina Parveen Anwar Ali, Jianfeng Ping, Yuxin Liu, Xianmin Zhang, Benjamin C. K. Tee, Yong Lin Kong, John S. Ho","doi":"10.1038/s41928-024-01291-0","DOIUrl":"https://doi.org/10.1038/s41928-024-01291-0","url":null,"abstract":"<p>Soft polymers programmed with functional particles can be used to create intrinsically stretchable electronics. However, current approaches to fabricating such materials require that the particles be first colloidally dispersed in a liquid monomer or polymer solution that have limited material compatibilities and necessitate precise control over the associated fluid mechanics during the printing process. Here we report the direct incorporation of functional particles in soft polymers using particle engulfment, a process in which particles are spontaneously subsumed by the polymer matrix via surface energy. The engulfment phenomenon occurs when the characteristic size of the particles is much smaller than the elastocapillary length of the polymer matrix, resulting in an energetically stable configuration where functional particles become deeply embedded into the polymer. We use the approach to fabricate multilayered, multimaterial and elastic devices with wireless sensing, communication and power transfer capabilities.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"72 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142911872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The future of semiconductor technology shapes up","authors":"","doi":"10.1038/s41928-024-01332-8","DOIUrl":"10.1038/s41928-024-01332-8","url":null,"abstract":"Technology breakthroughs at the 2024 IEEE International Electron Devices Meeting, which this year has a focus on shaping tomorrow’s semiconductor technology.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1059-1059"},"PeriodicalIF":33.7,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01332-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142874278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiaming Qi, Longteng Yu, Eng Tat Khoo, Kian Wei Ng, Yujia Gao, Alfred Wei Chieh Kow, Joo Chuan Yeo, Chwee Teck Lim
{"title":"Bridging the digital–physical divide using haptic and wearable technologies","authors":"Jiaming Qi, Longteng Yu, Eng Tat Khoo, Kian Wei Ng, Yujia Gao, Alfred Wei Chieh Kow, Joo Chuan Yeo, Chwee Teck Lim","doi":"10.1038/s41928-024-01325-7","DOIUrl":"10.1038/s41928-024-01325-7","url":null,"abstract":"The metaverse could provide an immersive environment that integrates digital and physical realities. However, this will require appropriate haptic feedback and wearable technologies. Here we explore the development of haptic and wearable technologies that can be used to bridge the digital–physical divide and build a more realistic and immersive metaverse. We examine the mechanisms of haptic technology and the haptic devices that can replicate the sense of touch, and examine the development of wearable technology that can provide motion tracking through the integration of artificial intelligence. We highlight the potential applications of such technology in the areas of entertainment, commerce, education, training and healthcare. Finally, we consider the ethical and technological challenges that the field faces. This Review examines the development of haptic and wearable technologies that could be used to build a more realistic and immersive metaverse, exploring the potential applications of such technology and the ethical and technological challenges that the field faces.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1098-1110"},"PeriodicalIF":33.7,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142857721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Building inverters with stacked complementary nanosheet transistors","authors":"Xiong Xiong, Yanqing Wu","doi":"10.1038/s41928-024-01329-3","DOIUrl":"10.1038/s41928-024-01329-3","url":null,"abstract":"Developments in the fabrication processes of monolithic complementary field-effect transistors allow inverters with a 48 nm gate pitch to be created.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1072-1073"},"PeriodicalIF":33.7,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142849465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optoelectronic synthesizer for tunable microwave generation with ultralow phase noise","authors":"","doi":"10.1038/s41928-024-01296-9","DOIUrl":"10.1038/s41928-024-01296-9","url":null,"abstract":"A hybrid optoelectronic synthesizer is developed that combines simplified optical frequency division with direct digital synthesis to generate tunable, low-phase-noise microwaves across the X-band. This approach also achieves high frequency stability while reducing the size, weight and power demands, paving the way for chip-scale photonic microwave sources.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1084-1085"},"PeriodicalIF":33.7,"publicationDate":"2024-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142841577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Inho Song, Won-June Lee, Zhifan Ke, Liyan You, Ke Chen, Sumon Naskar, Palak Mehra, Jianguo Mei
{"title":"An n-doped capacitive transparent conductor for all-polymer electrochromic displays","authors":"Inho Song, Won-June Lee, Zhifan Ke, Liyan You, Ke Chen, Sumon Naskar, Palak Mehra, Jianguo Mei","doi":"10.1038/s41928-024-01293-y","DOIUrl":"10.1038/s41928-024-01293-y","url":null,"abstract":"Non-emissive transmissive displays—such as see-through electrochromic displays—regulate natural light instead of emitting light, resulting in low energy consumption, reduced eye strain and outdoor applications in daytime. However, the fabrication of electrochromic displays is complex due to the integration of several layers with different manufacturing requirements. Here we show that a transparent conducting polymer, n-doped poly(3,7-dihydrobenzo[1,2-b:4,5-b'']difuran-2,6-dione) (n-PBDF), can be used as both a transparent conductor and ion-storage material to make all-polymer electrochromic displays. The polymer has similar electrical properties as conventional transparent conductors while also being flexible and solution processable. The n-PBDF layer can serve dual roles in the display because of its high mixed ionic and electronic conductivity, which simplifies the device and allows for precise display pixel activation and control. By combining the minimally colour-changing n-PBDF with a patternable solid-state electrolyte, we created a non-emissive, flexible, all-polymer electrochromic display with low power consumption, bistability and full-colour capability. A conductive transparent polymer, which can function as both a conductor and an ion-storage layer, can be combined with a solid-state electrolyte to make flexible, transmissive, all-polymer electrochromic displays.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1158-1169"},"PeriodicalIF":33.7,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"All-polymer electrochromic displays with a dual-functional polymer conductor","authors":"","doi":"10.1038/s41928-024-01314-w","DOIUrl":"10.1038/s41928-024-01314-w","url":null,"abstract":"The multiple layers in electrochromic displays complicate the device structure and fabrication. Now, a transparent conductive polymer is shown to be both an effective conductor and ion-storage layer, enabling the fabrication of flexible, all-polymer electrochromic displays with a simplified device architecture.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1082-1083"},"PeriodicalIF":33.7,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"What’s next for FETs?","authors":"Mathieu Luisier","doi":"10.1038/s41928-024-01272-3","DOIUrl":"10.1038/s41928-024-01272-3","url":null,"abstract":"Comprehensive device simulations reveal the potential of ultra-scaled field-effect transistors based on two-dimensional channel materials.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1080-1081"},"PeriodicalIF":33.7,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Arnab Pal, Tanmay Chavan, Jacob Jabbour, Wei Cao, Kaustav Banerjee
{"title":"Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling","authors":"Arnab Pal, Tanmay Chavan, Jacob Jabbour, Wei Cao, Kaustav Banerjee","doi":"10.1038/s41928-024-01289-8","DOIUrl":"10.1038/s41928-024-01289-8","url":null,"abstract":"Atomically thin two-dimensional (2D) semiconductors—particularly transition metal dichalcogenides—are potential channel materials for post-silicon complementary metal–oxide–semiconductor (CMOS) field-effect transistors. However, their application in CMOS technology will require implementation in three-dimensional (3D) transistors. Here we report a framework for designing scaled 3D transistors using 2D semiconductors. Our approach is based on non-equilibrium Green’s function quantum transport simulations that incorporate the effects of non-ideal Schottky contacts and inclusive capacitance calculations, with material inputs derived from density functional theory simulations. A comparative performance analysis of different 3D transistors (2D and silicon based) and channel thicknesses is carried out for both low-standby-power and high-performance applications. This suggests that trilayer tungsten disulfide is the most promising material, offering an improvement in energy–delay product of over 55% compared with silicon counterparts, potentially extending CMOS scaling down to a few nanometres. We also show that 2D semiconductors could be uniquely engineered to create 2D nanoplate field-effect transistors that offer nearly tenfold improvement in integration density and drive current over both 2D- and silicon-based 3D field-effect transistors with similar footprints. A simulation framework for three-dimensionally structured transistors based on two-dimensional materials shows that they could be used to continue complementary metal–oxide–semiconductor scaling with performance and energy enhancements.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1147-1157"},"PeriodicalIF":33.7,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}