Nature Electronics最新文献

Building fast artificial nerves using vertical architectures

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-11 DOI: 10.1038/s41928-025-01354-w

Songsong Li, Max Weires, Sihong Wang

引用次数: 0

A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-10 DOI: 10.1038/s41928-025-01357-7

Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma

{"title":"A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors","authors":"Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma","doi":"10.1038/s41928-025-01357-7","DOIUrl":"https://doi.org/10.1038/s41928-025-01357-7","url":null,"abstract":"Artificial nerves that are capable of sensing, processing and memory functions at bio-realistic frequencies are of potential use in nerve repair and brain–machine interfaces. n-type organic electrochemical transistors are a possible building block for artificial nerves, as their positive-potential-triggered potentiation behaviour can mimic that of biological cells. However, the devices are limited by weak ionic and electronic transport and storage properties, which leads to poor volatile and non-volatile performance and, in particular, a slow response. We describe a high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors. We fabricate a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure that simultaneously enhances the ionic and electronic transport and the ion storage. The transistor exhibits a volatile response of 27 μs, a 100-kHz non-volatile memory frequency and a long state-retention time. Our integrated artificial nerve, which contains vertical n-type and p-type organic electrochemical transistors, offers sensing, processing and memory functions in the high-frequency domain. We also show that the artificial nerve can be integrated into animal models with compromised neural functions and that it can mimic basic conditioned reflex behaviour.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"31 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A wireless terahertz cryogenic interconnect that minimizes heat-to-information transfer

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-10 DOI: 10.1038/s41928-025-01355-9

Jinchen Wang, Isaac Harris, Mohamed Ibrahim, Dirk Englund, Ruonan Han

{"title":"A wireless terahertz cryogenic interconnect that minimizes heat-to-information transfer","authors":"Jinchen Wang, Isaac Harris, Mohamed Ibrahim, Dirk Englund, Ruonan Han","doi":"10.1038/s41928-025-01355-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01355-9","url":null,"abstract":"The development of practical quantum computers probably requires error-protected quantum processors with thousands of logical qubits. Reaching this scale potentially involves millions of physical qubits and scaled interconnects. The interconnects need to connect qubits operating at cryogenic temperature with a controller at a high-temperature stage. Conventional coaxial cables introduce conductive heat loads, and thus, optical interconnects using low-thermal-conductivity fibre links have been explored. However, each absorbed photon in the low-temperature stage involves considerable heating, as well as effects such as quasiparticle excitations. Here we report a wireless terahertz cryogenic interconnect that is based on complementary metal–oxide–semiconductor technology and minimizes the heat-to-information transfer ratio. Our architecture consists of integrated wideband transceivers operating at a carrier frequency of 260 GHz, a hot-to-cold ingress based on passive cold field-effect transistor terahertz detector and a cold-to-hot egress using ultralow-power backscatter modulation at the cold reservoir. Our terahertz quantum interconnect technology could potentially provide high-capacity reconfigurable multichannel cryo-interconnects that operate near the fundamental limits of information transfer.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"15 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A robust organic hydrogen sensor for distributed monitoring applications

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-06 DOI: 10.1038/s41928-025-01352-y

Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos

{"title":"A robust organic hydrogen sensor for distributed monitoring applications","authors":"Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos","doi":"10.1038/s41928-025-01352-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01352-y","url":null,"abstract":"Hydrogen is an abundant and clean energy source that could help to decarbonize difficult-to-electrify economic sectors. However, its safe deployment relies on the availability of cost-effective hydrogen detection technologies. We describe a hydrogen sensor that uses an organic semiconductor as the active layer. It can operate over a wide temperature and humidity range. Ambient oxygen p-dopes the organic semiconductor, which improves hole transport, and the presence of hydrogen reverses this doping process, leading to a drop in current and enabling reliable and rapid hydrogen detection. The sensor exhibits a high responsivity (more than 10,000), fast response time (less than 1 s), low limit of detection (around 192 ppb) and low power consumption (less than 2 μW). It can operate continuously for more than 646 days in ambient air at room temperature. We show that the sensor outperforms a commercial hydrogen detector in realistic sensing scenarios, illustrating its suitability for application in distributed sensor networks for early warning of hydrogen leaks and preventing explosions or fires.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"53 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory 利用空穴阱诱导激发记忆加快量子点发光二极管的响应速度

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-03 DOI: 10.1038/s41928-025-01350-0

Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin

{"title":"Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory","authors":"Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin","doi":"10.1038/s41928-025-01350-0","DOIUrl":"https://doi.org/10.1038/s41928-025-01350-0","url":null,"abstract":"Fast-response electroluminescent devices are crucial for optoelectronic applications that involve high-speed operations. Quantum-dot light-emitting diodes are solution-processed electroluminescent devices with high efficiencies and stabilities, and they are of potential use in such applications. However, their response speed is typically limited by slow charge injection and transport across the organic hole-transport layers. We show that the transient electroluminescent responses of quantum-dot light-emitting diodes are influenced by their excitation history in pulsed operations. As the pulse interval decreases, this results in an increased response speed and the emergence of another fast-response electroluminescent channel, indicating the presence of excitation-memory effects. We show that these dynamics are due to deep-level hole traps in the organic hole-transport layers with fast charge-trapping and slow charge-detrapping characteristics. We develop a low-capacitance micro-quantum-dot light-emitting diode that exploits the excitation-memory-induced fast-response channel. The device, which has a −3 dB bandwidth of up to 19 MHz, exhibits an electroluminescent modulation frequency of 100 MHz and data-transmission rates of up to 120 Mbps with sub-picojoule energy consumption.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"67 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143532348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new model for AI

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01361-x

引用次数: 0

High-performance magnetostatic wave resonators based on deep anisotropic etching of gadolinium gallium garnet substrates

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01345-x

Sudhanshu Tiwari, Anuj Ashok, Connor Devitt, Sunil A. Bhave, Renyuan Wang

引用次数: 0

Microcomb-synchronized optoelectronics

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01349-7

Xiangpeng Zhang, Xuguang Zhang, Yujun Chen, Warren Jin, Zixuan Zhou, Chenyu Liu, Chenghao Lao, Jiahui Huang, Jingwen Dong, Weichao Ma, Weiwei Hu, Xingjun Wang, John E. Bowers, Wangzhe Li, Lin Chang

引用次数: 0

Author Correction: On-chip transfer of ultrashort graphene plasmon wave packets using terahertz electronics

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01363-9

Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

引用次数: 0

Fast magnonic device development with inverse design

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01347-9

Mingzhong Wu

引用次数: 0