Nature Electronics最新文献_第2页

Scaling quantum computers with electronic–photonic chips 用电子-光子芯片缩放量子计算机

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-07-14 DOI: 10.1038/s41928-025-01416-z

Yun Zheng, Xinyu Jia, Jianwei Wang

引用次数: 0

Scalable feedback stabilization of quantum light sources on a CMOS chip CMOS芯片上量子光源的可伸缩反馈稳定

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-07-14 DOI: 10.1038/s41928-025-01410-5

Danielius Kramnik, Imbert Wang, Anirudh Ramesh, Josep M. Fargas Cabanillas, Ðorđe Gluhović, Sidney Buchbinder, Panagiotis Zarkos, Christos Adamopoulos, Prem Kumar, Vladimir M. Stojanović, Miloš A. Popović

{"title":"Scalable feedback stabilization of quantum light sources on a CMOS chip","authors":"Danielius Kramnik, Imbert Wang, Anirudh Ramesh, Josep M. Fargas Cabanillas, Ðorđe Gluhović, Sidney Buchbinder, Panagiotis Zarkos, Christos Adamopoulos, Prem Kumar, Vladimir M. Stojanović, Miloš A. Popović","doi":"10.1038/s41928-025-01410-5","DOIUrl":"https://doi.org/10.1038/s41928-025-01410-5","url":null,"abstract":"Silicon photonics could soon be used to create the vast numbers of physical qubits needed to achieve useful quantum information processing by leveraging mature complementary metal–oxide–semiconductor (CMOS) manufacturing to miniaturize optical devices for generating and manipulating quantum states of light. However, the development of practical silicon quantum-photonic integrated circuits faces challenges related to high sensitivity to process and temperature variations, free-carrier and self-heating nonlinearities, and thermal crosstalk. These issues have been partially addressed with bulky off-chip electronics, but this sacrifices many benefits of a chip-scale platform. Here we report an electronic–photonic quantum system-on-chip that consists of quantum-correlated photon-pair sources stabilized via on-chip feedback control circuits and is fabricated in a commercial 45-nm CMOS microelectronics foundry. We use non-invasive photocurrent sensing in a tunable microring cavity photon-pair source to actively lock it to a fixed-wavelength pump laser while operating in the quantum regime, enabling large-scale microring-based quantum systems. We also show that these sources maintain stable quantum properties and operate reliably in a practical setting with many adjacent photon-pair sources creating thermal disturbances on the same chip. Such dense integration of electronics and photonics enables implementation and control of quantum-photonic systems at the scale needed to achieve useful quantum information processing with CMOS-fabricated chips.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144622260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Radiofrequency signal processing with a memristive system-on-a-chip 用记忆芯片系统处理射频信号

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-07-08 DOI: 10.1038/s41928-025-01409-y

Yi Huang, Chaoyi He, Yunzhi Ling, Ning Ge, J. Joshua Yang, Miao Hu, Linda Katehi, Qiangfei Xia

{"title":"Radiofrequency signal processing with a memristive system-on-a-chip","authors":"Yi Huang, Chaoyi He, Yunzhi Ling, Ning Ge, J. Joshua Yang, Miao Hu, Linda Katehi, Qiangfei Xia","doi":"10.1038/s41928-025-01409-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01409-y","url":null,"abstract":"The development of wireless communication technology and the Internet of Things requires radiofrequency communication systems with higher frequencies and faster communication speeds. However, traditional digital processing platforms—which involve high-speed analogue-to-digital converters, intensive data movement and complex digital computation in software-defined radio systems—suffer from high energy consumption and latency. Signal processing in the analogue domain using non-volatile memristive devices can reduce data movement and energy consumption, but the development of system-level designs remains limited. Here we report a radiofrequency signal processing system that is based on analogue in-memory computing within a multicore memristive system-on-a-chip. With the approach, we demonstrate an analogue discrete Fourier transform for spectrum analysis, a mixer-free demodulator for in-phase and quadrature demodulation, and analogue neural networks for radiofrequency transmitter identification and anomaly detection. The memristive system-on-a-chip offers an identification accuracy of over 90% and is up to 6.8 times more energy efficient and up to 6.2 times faster than traditional digital processing platforms.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144578020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Residue-free wafer-scale direct imprinting of two-dimensional materials 二维材料的无残留晶圆级直接压印

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-07-01 DOI: 10.1038/s41928-025-01408-z

Zhiwei Li, Xiao Liu, Jiayu Shi, Xiangbin Cai, Yan Zhang, Wenduo Chen, Yuhao Jin, Hao Jiang, So Yeon Kim, Chao Zhu, Ya Deng, Yanran Liu, X. Renshaw Wang, Taotao Li, Ju Li, Zheng Liu, Hongbing Cai, Weibo Gao

{"title":"Residue-free wafer-scale direct imprinting of two-dimensional materials","authors":"Zhiwei Li, Xiao Liu, Jiayu Shi, Xiangbin Cai, Yan Zhang, Wenduo Chen, Yuhao Jin, Hao Jiang, So Yeon Kim, Chao Zhu, Ya Deng, Yanran Liu, X. Renshaw Wang, Taotao Li, Ju Li, Zheng Liu, Hongbing Cai, Weibo Gao","doi":"10.1038/s41928-025-01408-z","DOIUrl":"https://doi.org/10.1038/s41928-025-01408-z","url":null,"abstract":"Two-dimensional (2D) semiconductors have the potential to replace silicon in next-generation electronic devices. However, despite advances in proof-of-concept device demonstrations and wafer-scale crystal synthesis, the lack of a compatible residue-free patterning technology has hindered industrialization. Here we describe a metal-stamp imprinting method for patterning 2D films into high-quality wafer-scale arrays without introducing chemical or polymer residues. A metal stamp with a three-dimensional morphology is used to form a local contact at the stamp–2D interface. The process selectively exfoliates some of the 2D material while leaving 2D arrays on the growth substrate. Microscopy and spectroscopy characterizations confirmed the clean surface and undamaged crystal structure. A statistical analysis of 100 back-gated molybdenum disulfide (MoS2) transistors and 500 top-gated logic circuits found a 20-times-lower variation of the threshold voltage compared to a reactive-ion-etching-based patterning process. The device yield on a 2-inch wafer was 97.6%.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"32 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Continuous biochemical profiling of the gastrointestinal tract using an integrated smart capsule 使用集成智能胶囊对胃肠道进行连续生化分析

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-27 DOI: 10.1038/s41928-025-01407-0

Jihong Min, Hyunah Ahn, Heather Lukas, Xiaotian Ma, Rinni Bhansali, Sung-Hyuk Sunwoo, Canran Wang, Yadong Xu, Dickson R. Yao, Gwangmook Kim, Zhaoping Li, Tzung K. Hsiai, Azita Emami, Hee-Tae Jung, Wei Gao

{"title":"Continuous biochemical profiling of the gastrointestinal tract using an integrated smart capsule","authors":"Jihong Min, Hyunah Ahn, Heather Lukas, Xiaotian Ma, Rinni Bhansali, Sung-Hyuk Sunwoo, Canran Wang, Yadong Xu, Dickson R. Yao, Gwangmook Kim, Zhaoping Li, Tzung K. Hsiai, Azita Emami, Hee-Tae Jung, Wei Gao","doi":"10.1038/s41928-025-01407-0","DOIUrl":"https://doi.org/10.1038/s41928-025-01407-0","url":null,"abstract":"The gastrointestinal tract contains a wealth of chemical information that can be used to decipher the health of the digestive and nervous systems. Traditional methods of analysis, such as faecal analysis and biopsies, are invasive, costly and incapable of providing real-time metabolic and hormone profiling across the gastrointestinal tract. Commercial ingestible capsule sensors have been developed, but only monitor basic markers, such as pH and pressure, neglecting detailed chemical analysis. Here we report an integrated smart capsule that can simultaneously detect a spectrum of biochemical markers, including electrolytes, metabolites and hormones. The capsule, which is termed PillTrek, is 7 mm in diameter and 25 mm in length, and houses a miniaturized wireless electrochemical workstation capable of executing a range of electrochemical measurement techniques (potentiometry, amperometry, voltammetry and impedimetry), allowing it to interface with a variety of electrochemical sensors and detect various parameters in the gut. Using an array of sensors (serotonin, glucose, pH, ionic strength and temperature), we illustrate the capabilities of the system in vitro and in vivo in animal studies involving rat and rabbit models, monitoring the dynamic profile of these crucial biomarkers and their responsiveness to different dietary intakes.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"186 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144500414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-efficiency elementary network of interchangeable superconducting qubit devices 可互换超导量子比特器件的高效基本网络

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-27 DOI: 10.1038/s41928-025-01404-3

Michael Mollenhauer, Abdullah Irfan, Xi Cao, Supriya Mandal, Wolfgang Pfaff

引用次数: 0

IGZO DRAM in three dimensions 三维IGZO DRAM

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01413-2

Matthew Parker

引用次数: 0

Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric 作为高κ铁电介质的独立式氧化铪膜集成到二维晶体管中

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01398-y

Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, Hsien-Chi Tsai, Yuan-Ming Chang, Chang-Yang Kuo, Chun-Fu Chang, Jyun-Hong Chen, Ying-Hao Chu, Mahito Yamamoto, Chang-Hong Shen, Yu-Lun Chueh, Po-Wen Chiu, Yi-Chun Chen, Jan-Chi Yang, Yen-Fu Lin

{"title":"Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric","authors":"Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, Hsien-Chi Tsai, Yuan-Ming Chang, Chang-Yang Kuo, Chun-Fu Chang, Jyun-Hong Chen, Ying-Hao Chu, Mahito Yamamoto, Chang-Hong Shen, Yu-Lun Chueh, Po-Wen Chiu, Yi-Chun Chen, Jan-Chi Yang, Yen-Fu Lin","doi":"10.1038/s41928-025-01398-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01398-y","url":null,"abstract":"Two-dimensional semiconductors could be used as a channel material in miniaturized transistors with high gate control. However, the lack of insulators that are both compatible with two-dimensional materials and suitable for integration into a fully scalable process flow limits development. Here we show that freestanding hafnium zirconium oxide (Hf0.5Zr0.5O2; HZO) membranes can be integrated with two-dimensional semiconductors as a high-κ dielectric. The HZO membranes can be varied in thickness from 5 to 40 nm, and be transferred onto molybdenum disulfide (MoS2) to create the top-gate dielectric in field-effect transistors. A 20-nm-thick HZO membrane exhibits a dielectric constant of 20.6 ± 0.5 and a leakage current (at 1 MV cm−1) of under 2.6 × 10−6 A cm−2, below the requirements of the International Technology Roadmap for Semiconductors, as well as typical ferroelectric behaviour. The MoS2 transistors with HZO dielectric exhibit an on/off ratio of 109 and a subthreshold swing below 60 mV dec−1 across four orders of current. We use the transistors to create an inverter, logic gates and a 1-bit full adder circuit. We also create a MoS2 transistor with a channel length of 13 nm, which exhibits an on/off ratio of over 108 and a subthreshold swing of 70 mV dec−1.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"17 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A shape-morphing actuator that locks 一种可以锁定的变形驱动器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01414-1

Katharina Zeissler

引用次数: 0

Sizing up wearables 评估可穿戴设备

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01417-y

引用次数: 0