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A superconducting full-wave bridge rectifier 超导全波桥式整流器
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-05-07 DOI: 10.1038/s41928-025-01376-4
Matteo Castellani, Owen Medeiros, Alessandro Buzzi, Reed A. Foster, Marco Colangelo, Karl K. Berggren
{"title":"A superconducting full-wave bridge rectifier","authors":"Matteo Castellani, Owen Medeiros, Alessandro Buzzi, Reed A. Foster, Marco Colangelo, Karl K. Berggren","doi":"10.1038/s41928-025-01376-4","DOIUrl":"https://doi.org/10.1038/s41928-025-01376-4","url":null,"abstract":"<p>Superconducting thin-film electronics can offer low power consumption, fast operating speeds and interfacing capabilities with cryogenic systems such as single-photon detector arrays and quantum computing devices. However, the lack of a reliable superconducting two-terminal asymmetric device, analogous to a semiconducting diode, limits the development of power-handling circuits, which are fundamental for scaling up such technology. Here we report a robust superconducting diode with tunable polarity using the asymmetric vortex surface barrier in niobium nitride micro-bridges. The diode offers a 43% peak rectification efficiency and half-wave rectification up to 120 MHz. We also integrate several of the diodes to create a bridge rectifier circuit on a single microchip that can perform continuous full-wave rectification at up to 3 MHz and alternating to direct current conversion of a 50 MHz signal in periodic bursts with an estimated peak power efficiency of 50%.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"20 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143915528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Author Correction: Vapour-deposited high-performance tin perovskite transistors 作者更正：气相沉积高性能锡钙钛矿晶体管
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01394-2
Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh
{"title":"Author Correction: Vapour-deposited high-performance tin perovskite transistors","authors":"Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh","doi":"10.1038/s41928-025-01394-2","DOIUrl":"https://doi.org/10.1038/s41928-025-01394-2","url":null,"abstract":"<p>Correction to: <i>Nature Electronics</i> https://doi.org/10.1038/s41928-025-01380-8, published online 28 April 2025.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"10 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics 亚化学计量氧化锆作为溶液处理的可重构电子介质
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01379-1
Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang
{"title":"Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics","authors":"Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang","doi":"10.1038/s41928-025-01379-1","DOIUrl":"https://doi.org/10.1038/s41928-025-01379-1","url":null,"abstract":"<p>Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal–oxide–semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO<sub>2-<i>x</i></sub>) as a dielectric and molybdenum disulfide (MoS<sub>2</sub>) as a semiconductor layer. The ZrO<sub>2-<i>x</i></sub>/MoS<sub>2</sub> heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and current on/off ratio of up to 10<sup>6</sup>. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 × 10<sup>4</sup>. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 10<sup>5</sup> A W<sup>−1</sup>, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"11 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scaling up superconducting quantum computers 扩大超导量子计算机
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-05-05 DOI: 10.1038/s41928-025-01381-7
Anthony Megrant, Yu Chen
{"title":"Scaling up superconducting quantum computers","authors":"Anthony Megrant, Yu Chen","doi":"10.1038/s41928-025-01381-7","DOIUrl":"https://doi.org/10.1038/s41928-025-01381-7","url":null,"abstract":"Superconducting qubits could be used to build a fault-tolerant quantum computer. But such a device will require millions of components, and various fundamental challenges remain to be addressed. Success will depend on sustained collaboration between industry and academia.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"19 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143905696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A spotlight on optoelectronics 光电子学的焦点
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01387-1
{"title":"A spotlight on optoelectronics","authors":"","doi":"10.1038/s41928-025-01387-1","DOIUrl":"https://doi.org/10.1038/s41928-025-01387-1","url":null,"abstract":"The latest advances in optoelectronic devices are helping to increase the response speed of displays and improve synchronization across computing networks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"35 1","pages":"289-289"},"PeriodicalIF":34.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143884831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vapour-deposited high-performance tin perovskite transistors 气相沉积高性能锡钙钛矿晶体管
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01380-8
Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh
{"title":"Vapour-deposited high-performance tin perovskite transistors","authors":"Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh","doi":"10.1038/s41928-025-01380-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01380-8","url":null,"abstract":"<p>Solution-processed tin (Sn<sup>2+</sup>)-halide perovskites can be used to create p-channel thin-film transistors (TFTs) with performance levels comparable with commercial low-temperature polysilicon technology. However, high-quality perovskite film deposition using industry-compatible production techniques remains challenging. Here we report the fabrication of p-channel Sn<sup>2+</sup>-halide perovskite TFTs using a thermal evaporation approach with inorganic caesium tin iodide (CsSnI<sub>3</sub>). We use lead chloride (PbCl<sub>2</sub>) as a reaction initiator that triggers solid-state reactions of the as-evaporated perovskite compounds. This promotes the conversion of dense and uniform perovskite films, and also modulates the intrinsically high hole density of the CsSnI<sub>3</sub> perovskite channels. Our optimized TFTs exhibit average hole field-effect mobilities of around 33.8 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, on/off current ratios of around 10<sup>8</sup>, and large-area fabrication uniformity. The devices also exhibit improved stability compared with solution-deposited devices.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"42 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143880393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D-printed coolers 3D 打印冷却器
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-17 DOI: 10.1038/s41928-025-01384-4
Yan Huang
{"title":"3D-printed coolers","authors":"Yan Huang","doi":"10.1038/s41928-025-01384-4","DOIUrl":"https://doi.org/10.1038/s41928-025-01384-4","url":null,"abstract":"<p>The researchers — who are based at the Institute of Science and Technology Austria — printed p-type and n-type thermoelectric legs using colloidal suspensions as inks. The ink formulation was tailored to facilitate the formation of interfacial bonding between the solid particles during the removal of the liquid media. At room temperature, printed p-type bismuth antimony telluride ((Bi,Sb)<sub>2</sub>Te<sub>3</sub>) achieved a figure of merit, <i>zT</i>, value of 1.42, whereas n-type silver selenide (Ag<sub>2</sub>Se) achieved a value of 1.3. Printed thermoelectric legs were then assembled into a 32-pair device, demonstrating a cooling temperature gradient of 50 °C when the hot side was fixed at 30 °C in air. A cooling coefficient of performance of 3.8 was achieved with an applied current of 0.15 A at room temperature.</p><p><b>Original reference:</b> <i>Science</i> <b>387</b>, 845–850 (2025)</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"24 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shrinking light-emitting diodes with perovskites 用钙钛矿缩小发光二极管
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-17 DOI: 10.1038/s41928-025-01385-3
Katharina Zeissler
{"title":"Shrinking light-emitting diodes with perovskites","authors":"Katharina Zeissler","doi":"10.1038/s41928-025-01385-3","DOIUrl":"https://doi.org/10.1038/s41928-025-01385-3","url":null,"abstract":"<p>The researchers — who are based at Zhejiang University and the University of Cambridge — fabricated the pixels using lithography techniques to create localized electrical contacts that define the active pixels and prevent non-radiative losses at the boundaries. This results in pixels with external quantum efficiencies of around 20% for pixel lengths down to 3.5 μm and between 5% and 10% for smaller pixel sizes.</p><p>The team created perovskite micro-LEDs that could emit near-infrared, red, green and sky-blue light. The green pixels, with an external quantum efficiency larger than 10%, had a peak luminance of more than 300,000 cd m<sup>−2</sup> and a maximum lifetime of around 40 hours. They also built a micro-LED display prototype based on a commercial thin-film transistor array.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"65 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143841586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monitoring physical and mental activities with skin conductance 用皮肤电导率监测体力和脑力活动
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-14 DOI: 10.1038/s41928-025-01373-7
Shenghan Wang, Guihuan Guo, Sheng Xu
{"title":"Monitoring physical and mental activities with skin conductance","authors":"Shenghan Wang, Guihuan Guo, Sheng Xu","doi":"10.1038/s41928-025-01373-7","DOIUrl":"https://doi.org/10.1038/s41928-025-01373-7","url":null,"abstract":"A skin conductance sensor with a water-permeable, micro-lace electrode can be used to continuously monitor daily activities.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"37 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143827192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lighting up the clock rate in electronics 点亮电子设备中的时钟频率
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2025-04-04 DOI: 10.1038/s41928-025-01367-5
Victor Torres-Company
{"title":"Lighting up the clock rate in electronics","authors":"Victor Torres-Company","doi":"10.1038/s41928-025-01367-5","DOIUrl":"https://doi.org/10.1038/s41928-025-01367-5","url":null,"abstract":"On-chip microcombs could be used to synchronize optoelectronic systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"107 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143775366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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