Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma
{"title":"Publisher Correction: A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors","authors":"Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma","doi":"10.1038/s41928-025-01378-2","DOIUrl":"https://doi.org/10.1038/s41928-025-01378-2","url":null,"abstract":"<p>Correction to: <i>Nature Electronics</i> https://doi.org/10.1038/s41928-025-01357-7, published online 10 March 2025.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"216 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In search of solutions for 2D synthesis","authors":"","doi":"10.1038/s41928-025-01372-8","DOIUrl":"10.1038/s41928-025-01372-8","url":null,"abstract":"Solution-processed 2D materials could be of use in the development of large-area electronic applications, but the performance of devices based on such materials remains an issue.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"193-193"},"PeriodicalIF":33.7,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-025-01372-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143717509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices","authors":"Junhao Liao, Yixuan Zhao, Xiaohui Chen, Zhaoning Hu, Saiyu Bu, Yaqi Zhu, Qi Lu, Mingpeng Shang, Haotian Wu, Fangfang Li, Zhuofeng Shi, Qian Zhao, Kaicheng Jia, Jingyi Hu, Ziyi Han, Qin Xie, Xiaoxu Zhao, Jianbo Yin, Wendong Wang, Hailin Peng, Xiaohui Qiu, Yanfeng Zhang, Li Lin, Zhongfan Liu","doi":"10.1038/s41928-025-01353-x","DOIUrl":"https://doi.org/10.1038/s41928-025-01353-x","url":null,"abstract":"<p>Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb<sub>2</sub>O<sub>3</sub>) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb<sub>2</sub>O<sub>3</sub> allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> (average of 14,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and good long-term stability. The Sb<sub>2</sub>O<sub>3</sub> can also be transferred and used as a dielectric in molybdenum disulfide (MoS<sub>2</sub>) devices, leading to devices with an on/off ratio of 10<sup>8</sup> and minimum subthreshold swing of 64 mV dec<sup>−1</sup>.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"5 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143660540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fast-response electroluminescence from quantum-dot light-emitting diodes","authors":"","doi":"10.1038/s41928-025-01366-6","DOIUrl":"https://doi.org/10.1038/s41928-025-01366-6","url":null,"abstract":"Quantum-dot light-emitting diodes have been achieved with electroluminescent response speeds faster than expected for their organic–inorganic hybrid structure. This breakthrough is enabled by an excitation-memory effect during pulsed operations, whereby the device ‘remembers’ past input signals to emit light faster on subsequent excitation, bypassing delays caused by slow charge transport.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"30 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143608486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Scalable heterostructures using photoresist-free patterning","authors":"Manuka Suriyage, Ruo-Si Chen, Yuerui Lu","doi":"10.1038/s41928-025-01362-w","DOIUrl":"10.1038/s41928-025-01362-w","url":null,"abstract":"A photoresist-free patterning technique enables scalable fabrication of two-dimensional heterostructures while preserving the electronic properties of the underlying layers.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"198-199"},"PeriodicalIF":33.7,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143598900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}