Nature Electronics最新文献_第2页

Reconfigurable in-sensor processing based on a multi-phototransistor–one-memristor array 基于多光电晶体管一晶闸管阵列的可重构传感器内处理技术

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-12 DOI: 10.1038/s41928-024-01280-3

Bingjie Dang, Teng Zhang, Xulei Wu, Keqin Liu, Ru Huang, Yuchao Yang

{"title":"Reconfigurable in-sensor processing based on a multi-phototransistor–one-memristor array","authors":"Bingjie Dang, Teng Zhang, Xulei Wu, Keqin Liu, Ru Huang, Yuchao Yang","doi":"10.1038/s41928-024-01280-3","DOIUrl":"10.1038/s41928-024-01280-3","url":null,"abstract":"Memristors with photonic sensory capabilities can be used as elements in machine vision systems but face challenges in terms of encoding and processing optical data. This has led to different neural network architectures being developed for specific vision tasks, which limits progress towards more versatile in-sensor vision computing platforms. Here we describe a multi-phototransistor and one-memristor array that is based on niobium oxide memristors. It has reconfigurable dynamics and is compatible with both machine learning (analogue) and bioinspired (spiking) neural network architectures. The array can sense and process optical images and synchronize spatio-temporal data across different encoding formats. When the array is coupled with a classifier network using a one-transistor and one-memristor non-volatile memory array, it supports a variety of optical neural networks (including optical convolutional neural networks, recurrent neural networks and spiking neural networks). The resulting system can perform various computing vision tasks, such as recognizing static, motion and colour images. Niobium oxide memristors with reconfigurable dynamics can be used to make an array integrated with phototransistors that can encode image information in analogue or spiking form and can support different neural network architectures for image processing tasks.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"991-1003"},"PeriodicalIF":33.7,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142599761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A universal neuromorphic vision processing system 通用神经形态视觉处理系统

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-12 DOI: 10.1038/s41928-024-01288-9

Hongwei Tan, Sebastiaan van Dijken

引用次数: 0

Rapid interconnects for 3D soft electronics 三维软电子器件的快速互连

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-11 DOI: 10.1038/s41928-024-01282-1

Wedyan Babatain

引用次数: 0

An on-chip full-Stokes polarimeter based on optoelectronic polarization eigenvectors 基于光电偏振特征向量的片上全斯托克斯偏振计

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-11 DOI: 10.1038/s41928-024-01287-w

Jie Deng, Mengdie Shi, Xingsi Liu, Jing Zhou, Xinyue Qin, Ruowen Wang, Yuran Zhen, Xu Dai, Yinzhu Chen, Jingxuan Wei, Zhenhua Ni, Weibo Gao, Cheng-Wei Qiu, Xiaoshuang Chen

{"title":"An on-chip full-Stokes polarimeter based on optoelectronic polarization eigenvectors","authors":"Jie Deng, Mengdie Shi, Xingsi Liu, Jing Zhou, Xinyue Qin, Ruowen Wang, Yuran Zhen, Xu Dai, Yinzhu Chen, Jingxuan Wei, Zhenhua Ni, Weibo Gao, Cheng-Wei Qiu, Xiaoshuang Chen","doi":"10.1038/s41928-024-01287-w","DOIUrl":"10.1038/s41928-024-01287-w","url":null,"abstract":"Determining the polarization state of light is important in a variety of applications from optical communication to biomedical diagnostics. Polarimeters are, however, typically based on discrete bulky optical components, which can restrict miniaturization and limit wider application. Here we report the concept of an optoelectronic polarization eigenvector, which represents the linear relationship between the incident Stokes vector and the photocurrent of a detector. By configuring four of these eigenvectors to create an optimized optoelectronic conversion matrix, we establish a high-accuracy full-Stokes polarization detection method and use the approach to create a compact on-chip full-Stokes polarimeter. The polarimeter comprises four subpixels that share the same piece of few-layer molybdenum disulfide as the detection material. Each subpixel contains an integrated plasmonic metasurface and corresponds to a distinct optoelectronic polarization eigenvector. By tailoring the plasmonic metasurfaces and their geometric arrangement, the condition number of the optoelectronic conversion matrix can be minimized to achieve high-accuracy Stokes reconstruction. Using an optimized matrix, combined with a machine learning algorithm, the root mean square error of the full-Stokes reconstruction over the entire range of polarization states at arbitrary light intensities is less than 1%. Using a framework based on optoelectronic polarization eigenvectors and optoelectronic conversion matrixes, an on-chip full-Stokes polarimeter can be created that offers a root mean square error of less than 1% for each Stokes parameter over the entire range of polarization states at arbitrary light intensities.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"1004-1014"},"PeriodicalIF":33.7,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The development of general-purpose brain-inspired computing 通用大脑启发计算的发展

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-07 DOI: 10.1038/s41928-024-01277-y

Weihao Zhang, Songchen Ma, Xinglong Ji, Xue Liu, Yuqing Cong, Luping Shi

{"title":"The development of general-purpose brain-inspired computing","authors":"Weihao Zhang, Songchen Ma, Xinglong Ji, Xue Liu, Yuqing Cong, Luping Shi","doi":"10.1038/s41928-024-01277-y","DOIUrl":"10.1038/s41928-024-01277-y","url":null,"abstract":"Brain-inspired computing uses insights from neuroscience to develop more efficient computing systems. The approach is of use in a broad range of applications—from neural simulation to intelligent computing—and could potentially be used to create a general-purpose computing infrastructure. Here we explore the development of general-purpose brain-inspired computing. We examine the hardware and software that have so far been used to create brain-inspired computing systems. We then consider the potential of combining approaches from neuroscience and computer science to build general-purpose brain-inspired computing systems, highlighting three areas: temporal, spatial and spatiotemporal capabilities; approximate computing and precise computing; and control flow and data flow. Finally, we discuss initiatives that will be needed to develop general-purpose brain-inspired computing, highlighting three potential strategies: application-level pattern generalization, hardware-level structural generalization and software-level systematic generalization. This Perspective explores the development of general-purpose brain-inspired computing, considers the potential of combining specific approaches from neuroscience and computer science, and discusses the initiatives that will be needed to develop such systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"954-965"},"PeriodicalIF":33.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials 利用二维材料的置换掺杂和厚度控制实现高性能 p 型场效应晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-06 DOI: 10.1038/s41928-024-01265-2

Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Emanuel Sanchez, Divya Somvanshi, Zdenek Sofer, Mauricio Terrones, Yang Yang, Saptarshi Das

{"title":"High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials","authors":"Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Alexander Sredenschek, Zhuohang Yu, Kalyan Jyoti Sarkar, Muhtasim Ul Karim Sadaf, Kalaiarasan Meganathan, Andrew Pannone, Ying Han, David Emanuel Sanchez, Divya Somvanshi, Zdenek Sofer, Mauricio Terrones, Yang Yang, Saptarshi Das","doi":"10.1038/s41928-024-01265-2","DOIUrl":"https://doi.org/10.1038/s41928-024-01265-2","url":null,"abstract":"In silicon field-effect transistors (FETs), degenerate doping of the channel beneath the source and drain regions is used to create high-performance n- and p-type devices by reducing the contact resistance. Two-dimensional semiconductors have, in contrast, relied on metal-work-function engineering. This approach has led to the development of effective n-type 2D FETs due to the Fermi-level pinning occurring near the conduction band, but it is challenging with p-type FETs. Here we show that the degenerate p-type doping of molybdenum diselenide and tungsten diselenide—achieved through substitutional doping with vanadium, niobium and tantalum—can reduce the contact resistance to as low as 95 Ω µm in multilayers. This, though, comes at the cost of poor electrostatic control, and we find that the doping effectiveness—and its impact on electrostatic control—is reduced in thinner layers due to strong quantum confinement effects. We, therefore, develop a high-performance p-type 2D molybdenum diselenide FET using a layer-by-layer thinning method to create a device with thin layers at the channel and thick doped layers at the contact regions.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"35 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A seamless graphene spin valve based on proximity to van der Waals magnet Cr2Ge2Te6 基于接近范德华磁体 Cr2Ge2Te6 的无缝石墨烯自旋阀

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-06 DOI: 10.1038/s41928-024-01267-0

Haozhe Yang, Marco Gobbi, Franz Herling, Van Tuong Pham, Francesco Calavalle, Beatriz Martín-García, Albert Fert, Luis E. Hueso, Fèlix Casanova

{"title":"A seamless graphene spin valve based on proximity to van der Waals magnet Cr2Ge2Te6","authors":"Haozhe Yang, Marco Gobbi, Franz Herling, Van Tuong Pham, Francesco Calavalle, Beatriz Martín-García, Albert Fert, Luis E. Hueso, Fèlix Casanova","doi":"10.1038/s41928-024-01267-0","DOIUrl":"https://doi.org/10.1038/s41928-024-01267-0","url":null,"abstract":"Pristine graphene is potentially an ideal medium for transporting spin information. Proximity effects—where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions—can also be used in graphene to generate and detect spins by acquiring spin–orbit coupling or magnetic exchange coupling. However, the development of seamless spintronic devices that are based only on proximity effects remains challenging. Here we report a two-dimensional graphene spin valve that is enabled by proximity to the van der Waals magnet Cr2Ge2Te6. Spin precession measurements show that the graphene acquires both spin–orbit coupling and magnetic exchange coupling when interfaced with the Cr2Ge2Te6. This leads to spin generation by both electrical spin injection and the spin Hall effect, while retaining spin transport. The simultaneous presence of spin–orbit coupling and magnetic exchange coupling also leads to a sizeable anomalous Hall effect.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"31 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142588504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A single-transducer echomyography system for monitoring muscle activity 用于监测肌肉活动的单传感器超声造影系统

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-05 DOI: 10.1038/s41928-024-01273-2

引用次数: 0

Scientific challenges in governing military AI 管理军事人工智能的科学挑战

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-11-04 DOI: 10.1038/s41928-024-01275-0

WooJung Jon

引用次数: 0

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 具有极端量子约束的按比例垂直纳米线异质结隧穿晶体管

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-11-04 DOI: 10.1038/s41928-024-01279-w

Yanjie Shao, Marco Pala, Hao Tang, Baoming Wang, Ju Li, David Esseni, Jesús A. del Alamo

引用次数: 0