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All-polymer electrochromic displays with a dual-functional polymer conductor
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-17 DOI: 10.1038/s41928-024-01314-w
{"title":"All-polymer electrochromic displays with a dual-functional polymer conductor","authors":"","doi":"10.1038/s41928-024-01314-w","DOIUrl":"10.1038/s41928-024-01314-w","url":null,"abstract":"The multiple layers in electrochromic displays complicate the device structure and fabrication. Now, a transparent conductive polymer is shown to be both an effective conductor and ion-storage layer, enabling the fabrication of flexible, all-polymer electrochromic displays with a simplified device architecture.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1082-1083"},"PeriodicalIF":33.7,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142832084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
What’s next for FETs? FET 的下一步是什么?
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-16 DOI: 10.1038/s41928-024-01272-3
Mathieu Luisier
{"title":"What’s next for FETs?","authors":"Mathieu Luisier","doi":"10.1038/s41928-024-01272-3","DOIUrl":"10.1038/s41928-024-01272-3","url":null,"abstract":"Comprehensive device simulations reveal the potential of ultra-scaled field-effect transistors based on two-dimensional channel materials.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1080-1081"},"PeriodicalIF":33.7,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-16 DOI: 10.1038/s41928-024-01289-8
Arnab Pal, Tanmay Chavan, Jacob Jabbour, Wei Cao, Kaustav Banerjee
{"title":"Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling","authors":"Arnab Pal, Tanmay Chavan, Jacob Jabbour, Wei Cao, Kaustav Banerjee","doi":"10.1038/s41928-024-01289-8","DOIUrl":"10.1038/s41928-024-01289-8","url":null,"abstract":"Atomically thin two-dimensional (2D) semiconductors—particularly transition metal dichalcogenides—are potential channel materials for post-silicon complementary metal–oxide–semiconductor (CMOS) field-effect transistors. However, their application in CMOS technology will require implementation in three-dimensional (3D) transistors. Here we report a framework for designing scaled 3D transistors using 2D semiconductors. Our approach is based on non-equilibrium Green’s function quantum transport simulations that incorporate the effects of non-ideal Schottky contacts and inclusive capacitance calculations, with material inputs derived from density functional theory simulations. A comparative performance analysis of different 3D transistors (2D and silicon based) and channel thicknesses is carried out for both low-standby-power and high-performance applications. This suggests that trilayer tungsten disulfide is the most promising material, offering an improvement in energy–delay product of over 55% compared with silicon counterparts, potentially extending CMOS scaling down to a few nanometres. We also show that 2D semiconductors could be uniquely engineered to create 2D nanoplate field-effect transistors that offer nearly tenfold improvement in integration density and drive current over both 2D- and silicon-based 3D field-effect transistors with similar footprints. A simulation framework for three-dimensionally structured transistors based on two-dimensional materials shows that they could be used to continue complementary metal–oxide–semiconductor scaling with performance and energy enhancements.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1147-1157"},"PeriodicalIF":33.7,"publicationDate":"2024-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Safe, secure and trustworthy compute-in-memory accelerators 安全、可靠、值得信赖的内存计算加速器
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-13 DOI: 10.1038/s41928-024-01312-y
Ziyu Wang, Yuting Wu, Yongmo Park, Wei D. Lu
{"title":"Safe, secure and trustworthy compute-in-memory accelerators","authors":"Ziyu Wang, Yuting Wu, Yongmo Park, Wei D. Lu","doi":"10.1038/s41928-024-01312-y","DOIUrl":"10.1038/s41928-024-01312-y","url":null,"abstract":"Compute-in-memory (CIM) accelerators based on emerging memory devices are of potential use in edge artificial intelligence and machine learning applications due to their power and performance capabilities. However, the privacy and security of CIM accelerators needs to be ensured before their widespread deployment. Here we explore the development of safe, secure and trustworthy CIM accelerators. We examine vulnerabilities specific to CIM accelerators, along with strategies to mitigate these threats including adversarial and side-channel attacks. We then discuss the security opportunities of CIM systems, leveraging the intrinsic randomness of the memory devices. Finally, we consider the incorporation of security considerations into the design of future CIM accelerators for secure and privacy-preserving edge AI applications. This Perspective examines the development of safe, secure and trustworthy compute-in-memory accelerators, exploring vulnerabilities specific to such accelerators and discussing the security opportunities of the systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1086-1097"},"PeriodicalIF":33.7,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142815763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An optoelectronic microwave synthesizer with frequency tunability and low phase noise
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-11 DOI: 10.1038/s41928-024-01294-x
Igor Kudelin, Pedram Shirmohammadi, William Groman, Samin Hanifi, Megan L. Kelleher, Dahyeon Lee, Takuma Nakamura, Charles A. McLemore, Alexander Lind, Dylan Meyer, Junwu Bai, Joe C. Campbell, Steven M. Bowers, Franklyn Quinlan, Scott A. Diddams
{"title":"An optoelectronic microwave synthesizer with frequency tunability and low phase noise","authors":"Igor Kudelin, Pedram Shirmohammadi, William Groman, Samin Hanifi, Megan L. Kelleher, Dahyeon Lee, Takuma Nakamura, Charles A. McLemore, Alexander Lind, Dylan Meyer, Junwu Bai, Joe C. Campbell, Steven M. Bowers, Franklyn Quinlan, Scott A. Diddams","doi":"10.1038/s41928-024-01294-x","DOIUrl":"10.1038/s41928-024-01294-x","url":null,"abstract":"Communication, navigation and radar systems rely on frequency-tunable and low-noise microwave sources. Compared to electronic microwave synthesizers, photonic systems that leverage high spectral purity lasers and optical frequency combs can generate microwaves with exceptionally low phase noise. However, photonic approaches lack frequency tunability and have substantial size, weight and power requirements, which limit wider application. Here we address these shortcomings with a hybrid optoelectronic approach that combines simplified optical frequency division with direct digital synthesis to produce tunable low-phase-noise microwaves across the entire X-band (8–12 GHz). This resulted in phase noise at 10 GHz of −156 dBc Hz−1 at 10 kHz offset and fractional frequency instability of 1 × 10−13 at 0.1 s. Spot-tuning away from 10 GHz by ±500 MHz, ±1 GHz or ±2 GHz yielded phase noise at 10 kHz offset of −150, −146 and −140 dBc Hz−1, respectively. Our synthesizer architecture is compatible with integrated photonic implementations and, thus, could be integrated in a chip-scale package. A synthesizer that combines a fixed low-noise photonic oscillator and a direct digital synthesizer—and is based on components that can all be integrated on chip—can create microwave signals that are tunable with low noise.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1170-1175"},"PeriodicalIF":33.7,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contact through a window
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-09 DOI: 10.1038/s41928-024-01311-z
Tingxin Li
{"title":"Contact through a window","authors":"Tingxin Li","doi":"10.1038/s41928-024-01311-z","DOIUrl":"10.1038/s41928-024-01311-z","url":null,"abstract":"When subjected to high magnetic fields and low temperatures, windowed two-dimensional contacts can be used to probe fractional quantum Hall states in n-type high-mobility molybdenum disulfide transistors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1076-1077"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The use of wearable sensors in perioperative surgical care
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-09 DOI: 10.1038/s41928-024-01313-x
Stephen R. Knight, Kenneth A. Mclean, Ewen M. Harrison
{"title":"The use of wearable sensors in perioperative surgical care","authors":"Stephen R. Knight, Kenneth A. Mclean, Ewen M. Harrison","doi":"10.1038/s41928-024-01313-x","DOIUrl":"10.1038/s41928-024-01313-x","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1060-1060"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two nanometre CMOS technology
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-09 DOI: 10.1038/s41928-024-01320-y
Owain Vaughan
{"title":"Two nanometre CMOS technology","authors":"Owain Vaughan","doi":"10.1038/s41928-024-01320-y","DOIUrl":"10.1038/s41928-024-01320-y","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1063-1063"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A quantum standard of resistance without a magnetic field
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-09 DOI: 10.1038/s41928-024-01305-x
Luca Callegaro
{"title":"A quantum standard of resistance without a magnetic field","authors":"Luca Callegaro","doi":"10.1038/s41928-024-01305-x","DOIUrl":"10.1038/s41928-024-01305-x","url":null,"abstract":"Measurements of the quantum anomalous Hall effect in a magnetically doped topological insulator to an accuracy of a few parts in 109 at zero magnetic field show that the system could provide a new type of quantum standard of resistance.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1074-1075"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Turning integrated circuits into ultrasonic transducers
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-12-09 DOI: 10.1038/s41928-024-01326-6
Chaerin Oh, Hyunjoo Jenny Lee
{"title":"Turning integrated circuits into ultrasonic transducers","authors":"Chaerin Oh, Hyunjoo Jenny Lee","doi":"10.1038/s41928-024-01326-6","DOIUrl":"10.1038/s41928-024-01326-6","url":null,"abstract":"The monolithic integration of ultrasound transducers using CMOS back-end-of-line processes is a promising route to introduce micromachined sensors into commercial foundries.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1070-1071"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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