{"title":"Turning integrated circuits into ultrasonic transducers","authors":"Chaerin Oh, Hyunjoo Jenny Lee","doi":"10.1038/s41928-024-01326-6","DOIUrl":"10.1038/s41928-024-01326-6","url":null,"abstract":"The monolithic integration of ultrasound transducers using CMOS back-end-of-line processes is a promising route to introduce micromachined sensors into commercial foundries.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1070-1071"},"PeriodicalIF":33.7,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142793502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Pixels that can focus","authors":"Katharina Zeissler","doi":"10.1038/s41928-024-01321-x","DOIUrl":"10.1038/s41928-024-01321-x","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1064-1064"},"PeriodicalIF":33.7,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Creating high-performance transistors by coating carbon nanotube arrays","authors":"Aaron D. Franklin","doi":"10.1038/s41928-024-01316-8","DOIUrl":"10.1038/s41928-024-01316-8","url":null,"abstract":"Carbon nanotube field-effect transistors with a high transconductance can be fabricated using dense arrays of nanotubes and a directly grown gate dielectric that conformably coats the nanotube array.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1068-1069"},"PeriodicalIF":33.7,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tuan Dung Nguyen, Qing Tu, Xu Zhang, Yuxuan Cosmi Lin
{"title":"A printed gallium oxide dielectric for 2D transistors","authors":"Tuan Dung Nguyen, Qing Tu, Xu Zhang, Yuxuan Cosmi Lin","doi":"10.1038/s41928-024-01307-9","DOIUrl":"10.1038/s41928-024-01307-9","url":null,"abstract":"An ultrathin and uniform layer of gallium oxide can be printed onto channels of molybdenum disulfide to create high-performance two-dimensional transistors with clean interfaces.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1078-1079"},"PeriodicalIF":33.7,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer
{"title":"A zero external magnetic field quantum standard of resistance at the 10−9 level","authors":"D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer","doi":"10.1038/s41928-024-01295-w","DOIUrl":"10.1038/s41928-024-01295-w","url":null,"abstract":"The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3 show that the system can provide a zero external magnetic field quantum standard of resistance.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1111-1116"},"PeriodicalIF":33.7,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142763494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Building brain–computer interfaces with graphene","authors":"Owain Vaughan","doi":"10.1038/s41928-024-01308-8","DOIUrl":"10.1038/s41928-024-01308-8","url":null,"abstract":"Carolina Aguilar, CEO of INBRAIN Neuroelectronics, tells Nature Electronics about the company’s work on graphene-based brain–computer interfaces and their recent in-patient tests.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 12","pages":"1061-1062"},"PeriodicalIF":33.7,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142760600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Build it up again","authors":"","doi":"10.1038/s41928-024-01310-0","DOIUrl":"10.1038/s41928-024-01310-0","url":null,"abstract":"Numerous developments in three-dimensional electronics have emerged in 2024, creating new opportunities for conventional and emerging electronic systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"935-935"},"PeriodicalIF":33.7,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01310-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142718385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
