Nature Electronics最新文献_第3页

Optical interconnect chips at low cost 低成本光互联芯片

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01284-z

Katharina Zeissler

引用次数: 0

A digitally embroidered metamaterial biosensor for kinetic environments 用于动力学环境的数字刺绣超材料生物传感器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-17 DOI: 10.1038/s41928-024-01263-4

Qihang Zeng, Xi Tian, Dat T. Nguyen, Chenhui Li, Patrick Chia, Benjamin C. K. Tee, Changsheng Wu, John S. Ho

引用次数: 0

The commercialization of graphene electronics 石墨烯电子产品的商业化

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-16 DOI: 10.1038/s41928-024-01270-5

Kari Hjelt, Henning Döscher

引用次数: 0

Fuzzy logic with two-dimensional interfacial junction transistors 使用二维界面结晶体管的模糊逻辑

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-15 DOI: 10.1038/s41928-024-01259-0

Langlang Xu, Xinyu Huang, Lei Ye

引用次数: 0

A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware 用于可重构模糊逻辑硬件的范德华界面结晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-15 DOI: 10.1038/s41928-024-01256-3

Hefei Liu, Jiangbin Wu, Jiahui Ma, Xiaodong Yan, Ning Yang, Xu He, Yangu He, Hongming Zhang, Ting-Hao Hsu, Justin H. Qian, Jing Guo, Mark C. Hersam, Han Wang

{"title":"A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware","authors":"Hefei Liu, Jiangbin Wu, Jiahui Ma, Xiaodong Yan, Ning Yang, Xu He, Yangu He, Hongming Zhang, Ting-Hao Hsu, Justin H. Qian, Jing Guo, Mark C. Hersam, Han Wang","doi":"10.1038/s41928-024-01256-3","DOIUrl":"10.1038/s41928-024-01256-3","url":null,"abstract":"Edge devices face challenges when implementing deep neural networks due to constraints on their computational resources and power consumption. Fuzzy logic systems can potentially provide more efficient edge implementations due to their compactness and capacity to manage uncertain data. However, their hardware realization remains difficult, primarily because implementing reconfigurable membership function generators using conventional technologies requires high circuit complexity and power consumption. Here we report a multigate van der Waals interfacial junction transistor based on a molybdenum disulfide/graphene heterostructure that can generate tunable Gaussian-like and π-shaped membership functions. By integrating these generators with peripheral circuits, we create a reconfigurable fuzzy controller hardware capable of nonlinear system control. This fuzzy logic system can also be integrated with a few-layer convolution neural network to form a fuzzy neural network with enhanced performance in image segmentation. An interfacial junction transistor based on a molybdenum disulfide/graphene heterostructure can generate tunable π-shaped and Gaussian-like membership functions, allowing membership function generators for fuzzy logic systems to be implemented with low device count and energy cost.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias 二维材料与高密度通孔的单质和异质三维集成

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-09 DOI: 10.1038/s41928-024-01251-8

Subir Ghosh, Yikai Zheng, Zhiyu Zhang, Yongwen Sun, Thomas F. Schranghamer, Najam U Sakib, Aaryan Oberoi, Chen Chen, Joan M. Redwing, Yang Yang, Saptarshi Das

{"title":"Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias","authors":"Subir Ghosh, Yikai Zheng, Zhiyu Zhang, Yongwen Sun, Thomas F. Schranghamer, Najam U Sakib, Aaryan Oberoi, Chen Chen, Joan M. Redwing, Yang Yang, Saptarshi Das","doi":"10.1038/s41928-024-01251-8","DOIUrl":"10.1038/s41928-024-01251-8","url":null,"abstract":"Monolithic three-dimensional (M3D) integration is being increasingly adopted by the semiconductor industry as an alternative to traditional through-silicon via technology as a way to increase the density of stacked, heterogenous electronic components. M3D integration can also provide transistor-level partitioning and material heterogeneity. However, there are few large-area demonstrations of M3D integration using non-silicon materials. Here, we report heterogeneous M3D integration of two-dimensional materials using a dense inter-via structure with an interconnect (I/O) density of 62,500 I/O per mm2. Our M3D stack consists of graphene-based chemisensors in tier 2 and molybdenum disulfide (MoS2) memtransistor-based programmable circuits in tier 1, with more than 500 devices in each tier. Our process allows the physical proximity between sensors and computing elements to be reduced to 50 nm, providing reduced latency in near-sensor computing applications. Our manufacturing process also stays below 200 °C and is thus compatible with back-end-of-line integration. Tiers containing graphene-based sensors and molybdenum disulfide-based processors can be vertically stacked using a monolithic integration process, with an interconnect density of 62,500 per mm2.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142385118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic 3D integration with 2D materials 与 2D 材料的单片式 3D 集成

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-09 DOI: 10.1038/s41928-024-01260-7

Sangmoon Han, Ji-Yun Moon, Sang-Hoon Bae

引用次数: 0

A wearable in-sensor computing platform based on stretchable organic electrochemical transistors 基于可拉伸有机电化学晶体管的可穿戴传感计算平台

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-02 DOI: 10.1038/s41928-024-01250-9

Dingyao Liu, Xinyu Tian, Jing Bai, Shaocong Wang, Shilei Dai, Yan Wang, Zhongrui Wang, Shiming Zhang

引用次数: 0

How we made the 1,000 V silicon carbide Schottky diode 我们如何制造 1,000 V 碳化硅肖特基二极管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01252-7

Tsunenobu Kimoto

引用次数: 0

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet 对偶反铁磁体中垂直奈尔阶的电开关

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01248-3

Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han

{"title":"Electrical switching of the perpendicular Néel order in a collinear antiferromagnet","authors":"Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han","doi":"10.1038/s41928-024-01248-3","DOIUrl":"https://doi.org/10.1038/s41928-024-01248-3","url":null,"abstract":"Spintronics is based on the electrical manipulation of magnetic order through current-induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy, binary states can be directly encoded in their opposite Néel order. The negligible stray fields and terahertz spin dynamics of these systems mean that they could potentially be used to develop ultrafast memory devices with high integration density. Here we report electrical switching of the perpendicular Néel order in a collinear antiferromagnet. We show that the Néel order in a prototypical collinear antiferromagnetic insulator—chromium oxide (Cr2O3)—can be switched by the spin–orbit torque with a low current density (5.8 × 106 A cm−2) and read out by the anomalous Hall effect. We also show that the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer can be electrically switched, confirming the Néel order switching of the Cr2O3 layer.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":34.3,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142329697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0