Nature Electronics最新文献_第3页

Energy-efficient computing at cryogenic temperatures 低温条件下的高能效计算

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-31 DOI: 10.1038/s41928-024-01278-x

Cezar Zota, Alberto Ferraris, Eunjung Cha, Mridula Prathapan, Peter Mueller, Effendi Leobandung

{"title":"Energy-efficient computing at cryogenic temperatures","authors":"Cezar Zota, Alberto Ferraris, Eunjung Cha, Mridula Prathapan, Peter Mueller, Effendi Leobandung","doi":"10.1038/s41928-024-01278-x","DOIUrl":"10.1038/s41928-024-01278-x","url":null,"abstract":"Increasing demand for data-intense computing applications—such as artificial intelligence, large language models and high-performance computing—has created a need for computing infrastructure that can handle large workloads with high energy efficiency. Advances in silicon-based complementary metal–oxide–semiconductor technology have led to more efficient field-effect transistors, but these devices are fundamentally limited by thermionic injection. As a result, on–off switching efficiency cannot be improved beyond 60 mV of drive voltage per decade of current. Operation of electronics at cryogenic temperatures, such as 77 K, can overcome this limit and provide performance improvements. Here we explore the development of computing at cryogenic temperatures. We examine the changes in electrical transistor and material properties observed at low temperatures, and highlight the need for further studies on cryogenic noise, reliability, variability and thermal management. We also consider the potential performance improvements at the device and circuit level of such technology. This Perspective examines the performance advantages and challenges of operating complementary metal–oxide–semiconductor (CMOS) devices at cryogenic temperatures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"966-974"},"PeriodicalIF":33.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A wearable echomyography system based on a single transducer 基于单个传感器的可穿戴超声造影系统

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-31 DOI: 10.1038/s41928-024-01271-4

Xiaoxiang Gao, Xiangjun Chen, Muyang Lin, Wentong Yue, Hongjie Hu, Siyu Qin, Fangao Zhang, Zhiyuan Lou, Lu Yin, Hao Huang, Sai Zhou, Yizhou Bian, Xinyi Yang, Yangzhi Zhu, Jing Mu, Xinyu Wang, Geonho Park, Chengchangfeng Lu, Ruotao Wang, Ray S. Wu, Joseph Wang, Jinghong Li, Sheng Xu

{"title":"A wearable echomyography system based on a single transducer","authors":"Xiaoxiang Gao, Xiangjun Chen, Muyang Lin, Wentong Yue, Hongjie Hu, Siyu Qin, Fangao Zhang, Zhiyuan Lou, Lu Yin, Hao Huang, Sai Zhou, Yizhou Bian, Xinyi Yang, Yangzhi Zhu, Jing Mu, Xinyu Wang, Geonho Park, Chengchangfeng Lu, Ruotao Wang, Ray S. Wu, Joseph Wang, Jinghong Li, Sheng Xu","doi":"10.1038/s41928-024-01271-4","DOIUrl":"10.1038/s41928-024-01271-4","url":null,"abstract":"Wearable electromyography devices can detect muscular activity for health monitoring and body motion tracking, but this approach is limited by weak and stochastic signals with a low spatial resolution. Alternatively, echomyography can detect muscle movement using ultrasound waves, but typically relies on complex transducer arrays, which are bulky, have high power consumption and can limit user mobility. Here we report a fully integrated wearable echomyography system that consists of a customized single transducer, a wireless circuit for data processing and an on-board battery for power. The system can be attached to the skin and provides accurate long-term wireless monitoring of muscles. To illustrate its capabilities, we use this system to detect the activity of the diaphragm, which allows the recognition of different breathing modes. We also develop a deep learning algorithm to correlate the single-transducer radio-frequency data from forearm muscles with hand gestures to accurately and continuously track 13 hand joints with a mean error of only 7.9°. An echomyography system based on a single transducer can be integrated into a wearable patch and used to monitor breathing patterns and hand gestures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"1035-1046"},"PeriodicalIF":33.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142556131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors 高迁移率 n 型二硫化钼晶体管中的分数量子霍尔相

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-30 DOI: 10.1038/s41928-024-01274-1

Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han

{"title":"Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors","authors":"Siwen Zhao, Jinqiang Huang, Valentin Crépel, Zhiren Xiong, Xingguang Wu, Tongyao Zhang, Hanwen Wang, Xiangyan Han, Zhengyu Li, Chuanying Xi, Senyang Pan, Zhaosheng Wang, Guangli Kuang, Jun Luo, Qinxin Shen, Jie Yang, Rui Zhou, Kenji Watanabe, Takashi Taniguchi, Benjamin Sacépé, Jing Zhang, Ning Wang, Jianming Lu, Nicolas Regnault, Zheng Vitto Han","doi":"10.1038/s41928-024-01274-1","DOIUrl":"https://doi.org/10.1038/s41928-024-01274-1","url":null,"abstract":"Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin–orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm2 V−1 s−1 and quantum mobilities of over 3,000 cm2 V−1 s−1 in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"26 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142536908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates 基于插层过渡金属二卤化物的发光二极管，在高发电率下可抑制效率衰减

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-10-28 DOI: 10.1038/s41928-024-01264-3

Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni

{"title":"Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates","authors":"Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni","doi":"10.1038/s41928-024-01264-3","DOIUrl":"https://doi.org/10.1038/s41928-024-01264-3","url":null,"abstract":"The capabilities of light-emitting diodes (LEDs) based on two-dimensional materials are restricted by efficiency roll-off, which is induced by exciton–exciton annihilation, at high current densities. Dielectric or strain engineering can be used to reduce exciton–exciton annihilation rates in monolayer transition metal dichalcogenides, but achieving electroluminescence in two-dimensional LEDs without efficiency roll-off is challenging. Here we describe pulsed LEDs that are based on intercalated transition metal dichalcogenides and offer suppressed exciton–exciton annihilation at high exciton generation rates. We intercalate oxygen plasma into few-layer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) to create LEDs with a suppressed efficiency roll-off in both photo-excitation and electro-injection luminescence at all exciton densities up to around 1020 cm−2 s−1. We attribute this suppression to a reduced exciton Bohr radius and exciton diffusion coefficient, as extracted from optical spectroscopy measurements. LEDs based on intercalated MoS2 and WS2 operate at maximum external quantum efficiencies of 0.02% and 0.78%, respectively, at a generation rate of around 1020 cm−2 s−1.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"30 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142519266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metamaterial biosensors for driver monitoring 用于监测驾驶员的超材料生物传感器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-25 DOI: 10.1038/s41928-024-01266-1

引用次数: 0

Soft electronic vias and interconnects through rapid three-dimensional assembly of liquid metal microdroplets 通过液态金属微滴的快速三维组装实现软电子通孔和互连

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-24 DOI: 10.1038/s41928-024-01268-z

Dong Hae Ho, Chenhao Hu, Ling Li, Michael D. Bartlett

{"title":"Soft electronic vias and interconnects through rapid three-dimensional assembly of liquid metal microdroplets","authors":"Dong Hae Ho, Chenhao Hu, Ling Li, Michael D. Bartlett","doi":"10.1038/s41928-024-01268-z","DOIUrl":"10.1038/s41928-024-01268-z","url":null,"abstract":"The development of soft electronics requires methods to connect flexible and stretchable circuits. With conventional rigid electronics, vias are typically used to electrically connect circuits with multilayered architectures, increasing device integration and functionality. However, creating vias using soft conductors leads to additional challenges. Here we show that soft vias and planar interconnects can be created through the directed stratification of liquid metal droplets with programmed photocuring. Abnormalities that occur at the edges of a mask during ultraviolet exposure are leveraged to create vertical stair-like architectures of liquid metal droplets within the photoresin. The liquid metal droplets in the uncured (liquid) resin rapidly settle, assemble and then are fully cured, forming electrically conductive soft vias at multiple locations throughout the circuit in a parallel and spatially tunable manner. Our three-dimensional selective stratification method can also form seamless connections with planar interconnects, for in-plane and through-plane electrical integration. Multiple stair-like structures can be created in parallel by programmed curing of a photoresin containing liquid metal droplets, which then stratify and assemble to form soft electronic vias.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"1015-1024"},"PeriodicalIF":33.7,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142488522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Twenty years of graphene electronics 石墨烯电子技术二十年

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-24 DOI: 10.1038/s41928-024-01290-1

引用次数: 0

CMOS-compatible strain engineering for monolayer semiconductor transistors 单层半导体晶体管的 CMOS 兼容应变工程

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-23 DOI: 10.1038/s41928-024-01244-7

Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn Neilson, Krishna C. Saraswat, Eric Pop

{"title":"CMOS-compatible strain engineering for monolayer semiconductor transistors","authors":"Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn Neilson, Krishna C. Saraswat, Eric Pop","doi":"10.1038/s41928-024-01244-7","DOIUrl":"10.1038/s41928-024-01244-7","url":null,"abstract":"Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a complementary metal–oxide–semiconductor (CMOS)-compatible manner could improve the industrial viability of 2D material transistors. Here, we show that silicon nitride capping layers can impart strain to monolayer molybdenum disulfide (MoS2) transistors on conventional silicon substrates, improving their performance with a CMOS-compatible approach, at a low thermal budget of 350 °C. Strained back-gated and dual-gated MoS2 transistors exhibit median increases in on-state current of up to 60% and 45%, respectively. The greatest improvements are found when reducing both transistor channels and contacts from micrometre-scale to 200 nm, reaching saturation currents of 488 µA µm−1 in devices with just 400 nm contact pitch. Simulations show that the performance enhancement is mainly due to tensile strain lowering the contact Schottky barriers, and that further reducing device dimensions, including contacts, could lead to additional increases in strain and performance. The on-current performance of MoS2-based transistors can be improved by using silicon nitride capping layers that apply strain to the devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"885-891"},"PeriodicalIF":33.7,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142487106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D transistors feel the strain 二维晶体管感受压力

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-23 DOI: 10.1038/s41928-024-01249-2

Jinghui Gao, Yuan Liu

引用次数: 0

Superconducting qubits at scale 超导量子比特

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01283-0

Katharina Zeissler

引用次数: 0