Nature Electronics最新文献_第3页

Filtering inputs for efficient intelligence systems 为高效的智能系统过滤输入

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-14 DOI: 10.1038/s41928-026-01698-x

Zhicheng Lin,Zegao Wang

引用次数: 0

A spiking neural network-in-logic architecture based on reconfigurable molybdenum disulfide dual-gate transistors with ferroelectric gating 一种基于可重构二硫化钼双栅铁电门控晶体管的脉冲神经网络逻辑结构

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-14 DOI: 10.1038/s41928-026-01706-0

Lingqi Li, Haofei Zheng, Chenyang Li, Heng Xiang, Jianze Wang, Fangyuan Zheng, Mingxi Chen, Yu-Chieh Chien, Jing Gao, Jiali Huo, Dongzhi Chi, Xuanyao Fong, Yi Wan, Wanqing Meng, Lain-Jong Li, Kah-Wee Ang

{"title":"A spiking neural network-in-logic architecture based on reconfigurable molybdenum disulfide dual-gate transistors with ferroelectric gating","authors":"Lingqi Li, Haofei Zheng, Chenyang Li, Heng Xiang, Jianze Wang, Fangyuan Zheng, Mingxi Chen, Yu-Chieh Chien, Jing Gao, Jiali Huo, Dongzhi Chi, Xuanyao Fong, Yi Wan, Wanqing Meng, Lain-Jong Li, Kah-Wee Ang","doi":"10.1038/s41928-026-01706-0","DOIUrl":"https://doi.org/10.1038/s41928-026-01706-0","url":null,"abstract":"Efficient processing of high-dimensional perceptual data is a challenge in modern electronics, as neuromorphic systems typically process all input features indiscriminately, leading to excessive neuronal activation and high energy consumption. A key issue is the lack of a hardware mechanism to suppress task-irrelevant information at the front-end before neuromorphic computation and preserve reconfigurability. Here we report a spiking neural network-in-logic computing platform in which the front-end logic and spiking neural networks are co-designed to perform task-directed input selection at the hardware level before spike generation, thereby reducing unnecessary neuronal activation. To implement this, we develop reconfigurable field-effect transistors based on dual-gate molybdenum disulfide devices incorporating a ferroelectric hafnium zirconium oxide layer. These transistors support logic, synaptic and neuronal primitives within a unified device platform. The reconfigurable transistors, which are fabricated using back-end-of-line-compatible processes, are organized into reconfigurable tiles whose roles can be reassigned across tasks, allowing logic-driven input selection to reshape the effective scale of downstream spiking neural networks. The computing architecture is validated using the Modified National Institute of Standards and Technology and Street View House Numbers benchmarks, and its system-level energy scaling with task-dependent input complexity is evaluated using real-world multitask inference.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"150 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2026-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149010568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tumbling with control 控制翻滚

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-14 DOI: 10.1038/s41928-026-01720-2

Katharina Zeissler

引用次数: 0

An embroidered sensor for prosthetic monitoring 用于假肢监测的刺绣传感器

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-11 DOI: 10.1038/s41928-026-01718-w

Matthew Parker

引用次数: 0

Soft-matter multistate ionic neuromorphic processing based on cascaded-heterointerface ion traps 基于级联异质界面离子阱的软物质多态离子神经形态处理

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-10 DOI: 10.1038/s41928-026-01688-z

Zhixin Wu,Suli Zhang,Linxin Zhai,Ao Zhang,Xingyue Zhu,Jiayu Xu,Huirong Liu,Zhiping Xu,Lei Jiang,Ziguang Zhao

引用次数: 0

Neural signal processing in an ionic gel 离子凝胶中的神经信号处理

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-10 DOI: 10.1038/s41928-026-01684-3

Puguang Peng,Yujia Zhang

引用次数: 0

Room-temperature correlated microwaves from magnons 由磁振子产生的室温相关微波

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-08 DOI: 10.1038/s41928-026-01703-3

Xufeng Zhang

引用次数: 0

An all-electric on-chip nanoplasma pulse generator for picosecond field-free spin–orbit torque switching in magnetic heterostructures 磁异质结构中皮秒无场自旋轨道转矩开关的全电片上纳米等离子体脉冲发生器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-08 DOI: 10.1038/s41928-026-01699-w

Xinhou Chen,Shishun Zhao,Yuchen Pu,Qu Yang,Hyunsoo Yang

引用次数: 0

High-performance tunnel-junction selectors with graded tunnel barriers based on five-layer van der Waals heterostructures 基于五层范德华异质结构的梯度隧道势垒高性能隧道结选择器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2026-09-07 DOI: 10.1038/s41928-026-01704-2

Hefei Liu, Han-Ting Liao, Mengjiao Li, Ning Yang, Ting-Hao Hsu, Ruoyu Zhao, Yichun Xu, Seung Ju Kim, Yongwei Ni, Vinay Chenna, Krishnamurthy Mahalingam, Cynthia Bowers, Sabyasachi Ganguli, Ajit K. Roy, Kenji Watanabe, Takashi Taniguchi, Hossein Hashemi, Jing Guo, Madan Dubey, Qing Wu, Han Wang, J. Joshua Yang

{"title":"High-performance tunnel-junction selectors with graded tunnel barriers based on five-layer van der Waals heterostructures","authors":"Hefei Liu, Han-Ting Liao, Mengjiao Li, Ning Yang, Ting-Hao Hsu, Ruoyu Zhao, Yichun Xu, Seung Ju Kim, Yongwei Ni, Vinay Chenna, Krishnamurthy Mahalingam, Cynthia Bowers, Sabyasachi Ganguli, Ajit K. Roy, Kenji Watanabe, Takashi Taniguchi, Hossein Hashemi, Jing Guo, Madan Dubey, Qing Wu, Han Wang, J. Joshua Yang","doi":"10.1038/s41928-026-01704-2","DOIUrl":"https://doi.org/10.1038/s41928-026-01704-2","url":null,"abstract":"Selectors are required to unlock the potential scalability of memory crossbar arrays and achieve three-dimensional stacking. However, the development of a two-terminal, stackable selector that meets key performance metrics—including large selectivity, high endurance, fast response speed, negligible cycling variation, minimal temperature dependence and good interdevice uniformity—remains a challenge. Here we report tunnel-junction selectors that are based on five vertically stacked van der Waals layers. The selectors are made of graphene/molybdenum disulfide/primary tunnel barrier/molybdenum disulfide/graphene heterostructures. We develop a theoretical model to predict the characteristics of selectors with a graded tunnel barrier, and use it to guide the design of two structures with hexagonal boron nitride and gallium sulfide as the primary tunnel barriers. The device with hexagonal boron nitride exhibits a nonlinearity above 107, an endurance of more than 1012 cycles, a switching speed of less than 20 ns, minimal temperature dependence and low device-to-device variability. The device with gallium sulfide can operate at a voltage of only 2.5 V and exhibit a nonlinearity above 106. We show that the selectors can be integrated into one-selector–one-resistor and one-selector–one-capacitor memory cells for both volatile and non-volatile memory technologies.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"1 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2026-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148899603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

How we discovered ferroelectricity in hafnium oxide thin films 我们是如何在氧化铪薄膜中发现铁电性的

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-04 DOI: 10.1038/s41928-026-01693-2

Tim S. Böscke, Ulrich Böttger, Uwe Schroeder

引用次数: 0