Nature Electronics最新文献_第3页

A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors 基于均匀集成有机电化学晶体管的高频人工神经

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-10 DOI: 10.1038/s41928-025-01357-7

Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma

{"title":"A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors","authors":"Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma","doi":"10.1038/s41928-025-01357-7","DOIUrl":"10.1038/s41928-025-01357-7","url":null,"abstract":"Artificial nerves that are capable of sensing, processing and memory functions at bio-realistic frequencies are of potential use in nerve repair and brain–machine interfaces. n-type organic electrochemical transistors are a possible building block for artificial nerves, as their positive-potential-triggered potentiation behaviour can mimic that of biological cells. However, the devices are limited by weak ionic and electronic transport and storage properties, which leads to poor volatile and non-volatile performance and, in particular, a slow response. We describe a high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors. We fabricate a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure that simultaneously enhances the ionic and electronic transport and the ion storage. The transistor exhibits a volatile response of 27 μs, a 100-kHz non-volatile memory frequency and a long state-retention time. Our integrated artificial nerve, which contains vertical n-type and p-type organic electrochemical transistors, offers sensing, processing and memory functions in the high-frequency domain. We also show that the artificial nerve can be integrated into animal models with compromised neural functions and that it can mimic basic conditioned reflex behaviour. An artificial nerve that is based on a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure can operate at high frequencies and mimic basic conditioned reflex behaviour in animals.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"254-266"},"PeriodicalIF":33.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A wireless terahertz cryogenic interconnect that minimizes heat-to-information transfer 一个无线太赫兹低温互连，最大限度地减少热量到信息的传输

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-10 DOI: 10.1038/s41928-025-01355-9

Jinchen Wang, Isaac Harris, Mohamed Ibrahim, Dirk Englund, Ruonan Han

{"title":"A wireless terahertz cryogenic interconnect that minimizes heat-to-information transfer","authors":"Jinchen Wang, Isaac Harris, Mohamed Ibrahim, Dirk Englund, Ruonan Han","doi":"10.1038/s41928-025-01355-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01355-9","url":null,"abstract":"The development of practical quantum computers probably requires error-protected quantum processors with thousands of logical qubits. Reaching this scale potentially involves millions of physical qubits and scaled interconnects. The interconnects need to connect qubits operating at cryogenic temperature with a controller at a high-temperature stage. Conventional coaxial cables introduce conductive heat loads, and thus, optical interconnects using low-thermal-conductivity fibre links have been explored. However, each absorbed photon in the low-temperature stage involves considerable heating, as well as effects such as quasiparticle excitations. Here we report a wireless terahertz cryogenic interconnect that is based on complementary metal–oxide–semiconductor technology and minimizes the heat-to-information transfer ratio. Our architecture consists of integrated wideband transceivers operating at a carrier frequency of 260 GHz, a hot-to-cold ingress based on passive cold field-effect transistor terahertz detector and a cold-to-hot egress using ultralow-power backscatter modulation at the cold reservoir. Our terahertz quantum interconnect technology could potentially provide high-capacity reconfigurable multichannel cryo-interconnects that operate near the fundamental limits of information transfer.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"15 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A robust organic hydrogen sensor for distributed monitoring applications 一个强大的有机氢传感器分布式监测应用

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-06 DOI: 10.1038/s41928-025-01352-y

Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos

{"title":"A robust organic hydrogen sensor for distributed monitoring applications","authors":"Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos","doi":"10.1038/s41928-025-01352-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01352-y","url":null,"abstract":"Hydrogen is an abundant and clean energy source that could help to decarbonize difficult-to-electrify economic sectors. However, its safe deployment relies on the availability of cost-effective hydrogen detection technologies. We describe a hydrogen sensor that uses an organic semiconductor as the active layer. It can operate over a wide temperature and humidity range. Ambient oxygen p-dopes the organic semiconductor, which improves hole transport, and the presence of hydrogen reverses this doping process, leading to a drop in current and enabling reliable and rapid hydrogen detection. The sensor exhibits a high responsivity (more than 10,000), fast response time (less than 1 s), low limit of detection (around 192 ppb) and low power consumption (less than 2 μW). It can operate continuously for more than 646 days in ambient air at room temperature. We show that the sensor outperforms a commercial hydrogen detector in realistic sensing scenarios, illustrating its suitability for application in distributed sensor networks for early warning of hydrogen leaks and preventing explosions or fires.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"53 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory 利用空穴阱诱导激发记忆加快量子点发光二极管的响应速度

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-03 DOI: 10.1038/s41928-025-01350-0

Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin

{"title":"Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory","authors":"Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin","doi":"10.1038/s41928-025-01350-0","DOIUrl":"https://doi.org/10.1038/s41928-025-01350-0","url":null,"abstract":"Fast-response electroluminescent devices are crucial for optoelectronic applications that involve high-speed operations. Quantum-dot light-emitting diodes are solution-processed electroluminescent devices with high efficiencies and stabilities, and they are of potential use in such applications. However, their response speed is typically limited by slow charge injection and transport across the organic hole-transport layers. We show that the transient electroluminescent responses of quantum-dot light-emitting diodes are influenced by their excitation history in pulsed operations. As the pulse interval decreases, this results in an increased response speed and the emergence of another fast-response electroluminescent channel, indicating the presence of excitation-memory effects. We show that these dynamics are due to deep-level hole traps in the organic hole-transport layers with fast charge-trapping and slow charge-detrapping characteristics. We develop a low-capacitance micro-quantum-dot light-emitting diode that exploits the excitation-memory-induced fast-response channel. The device, which has a −3 dB bandwidth of up to 19 MHz, exhibits an electroluminescent modulation frequency of 100 MHz and data-transmission rates of up to 120 Mbps with sub-picojoule energy consumption.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"67 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143532348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new model for AI 人工智能的新模型

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01361-x

引用次数: 0

High-performance magnetostatic wave resonators based on deep anisotropic etching of gadolinium gallium garnet substrates 基于钆镓石榴石衬底深各向异性刻蚀的高性能静磁波谐振器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01345-x

Sudhanshu Tiwari, Anuj Ashok, Connor Devitt, Sunil A. Bhave, Renyuan Wang

{"title":"High-performance magnetostatic wave resonators based on deep anisotropic etching of gadolinium gallium garnet substrates","authors":"Sudhanshu Tiwari, Anuj Ashok, Connor Devitt, Sunil A. Bhave, Renyuan Wang","doi":"10.1038/s41928-025-01345-x","DOIUrl":"10.1038/s41928-025-01345-x","url":null,"abstract":"Magnetostatic wave resonators based on yttrium iron garnet (YIG) are a promising technology platform for future communication filters. Such devices have demonstrated better quality factors than acoustic resonators in the 7 GHz range and above. However, the coupling coefficients of these resonators have been limited to less than 3%, primarily due to the restricted design space that is a result of microfabrication challenges related to the patterning of gadolinium gallium garnet (GGG), the substrate material used for growing single-crystal YIG. Here we report magnetostatic wave resonators created through the anisotropic etching of GGG substrates. Our approach, which is based on the YIG-on-GGG platform, uses a transducer with a hairclip-like structure. It is created by developing a microfabrication methodology that involves thinning and deep etching (up to 100 μm) of the GGG substrate. The resulting magnetostatic wave resonators exhibit a coupling of more than 8% in the 6–20 GHz frequency range. A microfabrication methodology that involves thinning and deep etching of gadolinium gallium garnet substrates can be used to create magnetostatic wave resonators that exhibit a coupling of more than 8% in the 6–20 GHz frequency range.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"267-275"},"PeriodicalIF":33.7,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-025-01345-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143507140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microcomb-synchronized optoelectronics Microcomb-synchronized光电子学

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01349-7

Xiangpeng Zhang, Xuguang Zhang, Yujun Chen, Warren Jin, Zixuan Zhou, Chenyu Liu, Chenghao Lao, Jiahui Huang, Jingwen Dong, Weichao Ma, Weiwei Hu, Xingjun Wang, John E. Bowers, Wangzhe Li, Lin Chang

引用次数: 0

Author Correction: On-chip transfer of ultrashort graphene plasmon wave packets using terahertz electronics 作者更正：使用太赫兹电子技术的超短石墨烯等离子体波包的片上传输

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01363-9

Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

引用次数: 0

Fast magnonic device development with inverse design 基于逆设计的快速磁振器件开发

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01347-9

Mingzhong Wu

引用次数: 0

Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures 圆片尺度异质结构二维渗透网络薄膜的正交光图像化

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-24 DOI: 10.1038/s41928-025-01351-z

In Cheol Kwak, Jihyun Kim, Jung Woo Moon, Seonkwon Kim, Ji Yun Park, Okin Song, Vlastimil Mazánek, Zdeněk Sofer, Hyunwoo Jo, Se Young Park, Moon Sung Kang, Joohoon Kang, Jeong Ho Cho

{"title":"Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures","authors":"In Cheol Kwak, Jihyun Kim, Jung Woo Moon, Seonkwon Kim, Ji Yun Park, Okin Song, Vlastimil Mazánek, Zdeněk Sofer, Hyunwoo Jo, Se Young Park, Moon Sung Kang, Joohoon Kang, Jeong Ho Cho","doi":"10.1038/s41928-025-01351-z","DOIUrl":"10.1038/s41928-025-01351-z","url":null,"abstract":"Molecular intercalation-based electrochemical exfoliation of two-dimensional (2D) materials can be used to create van der Waals heterostructures. However, the scalable assembly of vertical heterostructures typically requires the use of various chemical solvents for photolithography and subsequent transfer, which can leave behind chemical residues and limit the patterning resolution. We show that patterned van der Waals heterostructures can be fabricated from electrochemically exfoliated 2D flakes using a photoreactive crosslinker. When a 2D van der Waals percolated network with the crosslinker is exposed to ultraviolet light, the network junctions form covalent bonds, thereby enabling improved charge transport and orthogonal patterning of vertically stacked van der Waals thin-film networks without affecting the underlying prepatterned layers. Our approach can be used to create wafer-scale arrays of photopatterned field-effect transistors based on different 2D materials. The field-effect transistors exhibit high spatial uniformity and can be used to create logic gates, namely NOT, NAND and NOR gates. A photoreactive crosslinker can be used to directly pattern thin films of exfoliated two-dimensional flakes, and the technique can be performed sequentially to create patterned van der Waals heterostructures at wafer scales.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"235-243"},"PeriodicalIF":33.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143477379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0