Nature Electronics最新文献_第10页

Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates 基于插层过渡金属二卤化物的发光二极管，在高发电率下可抑制效率衰减

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-28 DOI: 10.1038/s41928-024-01264-3

Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni

{"title":"Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates","authors":"Shixuan Wang, Qiang Fu, Ting Zheng, Xu Han, Hao Wang, Tao Zhou, Jing Liu, Tianqi Liu, Yuwei Zhang, Kaiqi Chen, Qixing Wang, Zhexing Duan, Xin Zhou, Kenji Watanabe, Takashi Taniguchi, Jiaxu Yan, Yuan Huang, Yuwei Xiong, Joel K. W. Yang, Zhenliang Hu, Tao Xu, Litao Sun, Jinhua Hong, Yujie Zheng, Yumeng You, Qi Zhang, Junpeng Lu, Zhenhua Ni","doi":"10.1038/s41928-024-01264-3","DOIUrl":"10.1038/s41928-024-01264-3","url":null,"abstract":"The capabilities of light-emitting diodes (LEDs) based on two-dimensional materials are restricted by efficiency roll-off, which is induced by exciton–exciton annihilation, at high current densities. Dielectric or strain engineering can be used to reduce exciton–exciton annihilation rates in monolayer transition metal dichalcogenides, but achieving electroluminescence in two-dimensional LEDs without efficiency roll-off is challenging. Here we describe pulsed LEDs that are based on intercalated transition metal dichalcogenides and offer suppressed exciton–exciton annihilation at high exciton generation rates. We intercalate oxygen plasma into few-layer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) to create LEDs with a suppressed efficiency roll-off in both photo-excitation and electro-injection luminescence at all exciton densities up to around 1020 cm−2 s−1. We attribute this suppression to a reduced exciton Bohr radius and exciton diffusion coefficient, as extracted from optical spectroscopy measurements. LEDs based on intercalated MoS2 and WS2 operate at maximum external quantum efficiencies of 0.02% and 0.78%, respectively, at a generation rate of around 1020 cm−2 s−1. Light-emitting diodes with suppressed efficiency roll-off can be created by intercalating oxygen plasma into few-layer molybdenum disulfide and tungsten disulfide.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 1","pages":"56-65"},"PeriodicalIF":33.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142519266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metamaterial biosensors for driver monitoring 用于监测驾驶员的超材料生物传感器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-25 DOI: 10.1038/s41928-024-01266-1

引用次数: 0

Soft electronic vias and interconnects through rapid three-dimensional assembly of liquid metal microdroplets 通过液态金属微滴的快速三维组装实现软电子通孔和互连

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-24 DOI: 10.1038/s41928-024-01268-z

Dong Hae Ho, Chenhao Hu, Ling Li, Michael D. Bartlett

{"title":"Soft electronic vias and interconnects through rapid three-dimensional assembly of liquid metal microdroplets","authors":"Dong Hae Ho, Chenhao Hu, Ling Li, Michael D. Bartlett","doi":"10.1038/s41928-024-01268-z","DOIUrl":"10.1038/s41928-024-01268-z","url":null,"abstract":"The development of soft electronics requires methods to connect flexible and stretchable circuits. With conventional rigid electronics, vias are typically used to electrically connect circuits with multilayered architectures, increasing device integration and functionality. However, creating vias using soft conductors leads to additional challenges. Here we show that soft vias and planar interconnects can be created through the directed stratification of liquid metal droplets with programmed photocuring. Abnormalities that occur at the edges of a mask during ultraviolet exposure are leveraged to create vertical stair-like architectures of liquid metal droplets within the photoresin. The liquid metal droplets in the uncured (liquid) resin rapidly settle, assemble and then are fully cured, forming electrically conductive soft vias at multiple locations throughout the circuit in a parallel and spatially tunable manner. Our three-dimensional selective stratification method can also form seamless connections with planar interconnects, for in-plane and through-plane electrical integration. Multiple stair-like structures can be created in parallel by programmed curing of a photoresin containing liquid metal droplets, which then stratify and assemble to form soft electronic vias.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"1015-1024"},"PeriodicalIF":33.7,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142488522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Twenty years of graphene electronics 石墨烯电子技术二十年

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-24 DOI: 10.1038/s41928-024-01290-1

引用次数: 0

CMOS-compatible strain engineering for monolayer semiconductor transistors 单层半导体晶体管的 CMOS 兼容应变工程

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-23 DOI: 10.1038/s41928-024-01244-7

Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn Neilson, Krishna C. Saraswat, Eric Pop

{"title":"CMOS-compatible strain engineering for monolayer semiconductor transistors","authors":"Marc Jaikissoon, Çağıl Köroğlu, Jerry A. Yang, Kathryn Neilson, Krishna C. Saraswat, Eric Pop","doi":"10.1038/s41928-024-01244-7","DOIUrl":"10.1038/s41928-024-01244-7","url":null,"abstract":"Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a complementary metal–oxide–semiconductor (CMOS)-compatible manner could improve the industrial viability of 2D material transistors. Here, we show that silicon nitride capping layers can impart strain to monolayer molybdenum disulfide (MoS2) transistors on conventional silicon substrates, improving their performance with a CMOS-compatible approach, at a low thermal budget of 350 °C. Strained back-gated and dual-gated MoS2 transistors exhibit median increases in on-state current of up to 60% and 45%, respectively. The greatest improvements are found when reducing both transistor channels and contacts from micrometre-scale to 200 nm, reaching saturation currents of 488 µA µm−1 in devices with just 400 nm contact pitch. Simulations show that the performance enhancement is mainly due to tensile strain lowering the contact Schottky barriers, and that further reducing device dimensions, including contacts, could lead to additional increases in strain and performance. The on-current performance of MoS2-based transistors can be improved by using silicon nitride capping layers that apply strain to the devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"885-891"},"PeriodicalIF":33.7,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142487106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2D transistors feel the strain 二维晶体管感受压力

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-23 DOI: 10.1038/s41928-024-01249-2

Jinghui Gao, Yuan Liu

引用次数: 0

Superconducting qubits at scale 超导量子比特

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01283-0

Katharina Zeissler

引用次数: 0

Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode 利用范德华金属阴极实现模拟开关和高开/关比率的薄膜晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01269-y

Yesheng Li, Yao Xiong, Xiaolin Zhang, Lei Yin, Yiling Yu, Hao Wang, Lei Liao, Jun He

{"title":"Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode","authors":"Yesheng Li, Yao Xiong, Xiaolin Zhang, Lei Yin, Yiling Yu, Hao Wang, Lei Liao, Jun He","doi":"10.1038/s41928-024-01269-y","DOIUrl":"10.1038/s41928-024-01269-y","url":null,"abstract":"Neuromorphic computing based on memristors could help meet the growing demand for data-intensive computing applications such as artificial intelligence. Analogue memristors with multiple conductance states are of particular use in high-efficiency neuromorphic computing, but their weight mapping capabilities are typically limited by small on/off ratios. Here we show that memristors with analogue resistive switching and large on/off ratios can be created using two-dimensional van der Waals metallic materials (graphene or platinum ditelluride) as the cathodes. The memristors use silver as the top anode and indium phosphorus sulfide as the switching medium. Previous approaches have focused on modulating ion motion using changes to the resistive switching layer or anode, which can lower the on/off ratios. In contrast, our approach relies on the van der Waals cathode, which allows silver ion intercalation/de-intercalation, creating a high diffusion barrier to modulate ion motion. The strategy can achieve analogue resistive switching with an on/off ratio up to 108, over 8-bit conductance states and attojoule-level power consumption. We use the analogue properties to perform the chip-level simulation of a convolutional neural network that offers high recognition accuracy. Memristors with on/off ratios up to 108 and analogue resistive switching can be created using the intercalation/de-intercalation of silver ions in a two-dimensional metallic electrode to modulate ion migration.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 1","pages":"36-45"},"PeriodicalIF":33.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computing with molecular memristors 利用分子忆阻器进行计算

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01285-y

Matthew Parker

引用次数: 0

Optical interconnect chips at low cost 低成本光互联芯片

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01284-z

Katharina Zeissler

引用次数: 0