Nature Electronics最新文献_第10页

Terahertz wireless interconnects for cryogenic electronics 用于低温电子设备的太赫兹无线互连器件

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-01 DOI: 10.1038/s41928-025-01356-8

引用次数: 0

Electrodermal activity as a proxy for sweat rate monitoring during physical and mental activities 皮肤电活动作为身体和精神活动中汗率监测的代理

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-01 DOI: 10.1038/s41928-025-01365-7

Seung-Rok Kim, Yifei Zhan, Noelle Davis, Suhrith Bellamkonda, Liam Gillan, Elina Hakola, Jussi Hiltunen, Ali Javey

{"title":"Electrodermal activity as a proxy for sweat rate monitoring during physical and mental activities","authors":"Seung-Rok Kim, Yifei Zhan, Noelle Davis, Suhrith Bellamkonda, Liam Gillan, Elina Hakola, Jussi Hiltunen, Ali Javey","doi":"10.1038/s41928-025-01365-7","DOIUrl":"10.1038/s41928-025-01365-7","url":null,"abstract":"Electrodermal activity has long been used for mental activity monitoring by measuring skin conductance at specific locations, such as fingertips, with high sweat gland density. However, electrodermal activity has not been considered useful for physical activity monitoring, where large sweat volumes are generated, resulting in the accumulation of sweat at the skin–electrode interface and, thus, preventing further dynamic response to sweating events. Here we show that electrodermal activity can be used as a proxy for sweat loss measurement under both low and high physical activity levels. We use wearable sweat sensors that consist of water-permeable electrodes and microfluidic-based sweat analysers, and show that skin conductance is proportional to the instantaneous sweat loss. We demonstrate that sweat loss during exercise can be estimated by integrating skin conductance over time, which can be applied to assess the body hydration status of exercisers. From multisite measurements of skin conductance, we show that the wrist, forearm and upper arm are reflective of physical activity levels, whereas the finger is indicative of mental activity. Simultaneous measurement of two different sites selectively decouples mental and physical activities. With the help of wearable sweat sensors that use water-permeable electrodes, electrodermal activity can be used as a proxy for sweat loss monitoring during both mental and physical activities.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 4","pages":"353-361"},"PeriodicalIF":40.9,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143744734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Publisher Correction: A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors 出版者更正：基于均匀集成有机电化学晶体管的高频人工神经

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-01 DOI: 10.1038/s41928-025-01378-2

Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma

引用次数: 0

In search of solutions for 2D synthesis 寻找二维合成的解

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-27 DOI: 10.1038/s41928-025-01372-8

引用次数: 0

Gas sensors on CMOS CMOS气体传感器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-24 DOI: 10.1038/s41928-025-01371-9

Yan Huang

引用次数: 0

Powering up Bayesian neural networks 增强贝叶斯神经网络

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-24 DOI: 10.1038/s41928-025-01369-3

Matthew Parker

引用次数: 0

Controlling silicon spin qubits with DACs 用dac控制硅自旋量子位

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-24 DOI: 10.1038/s41928-025-01370-w

Matthew Parker

引用次数: 0

A reliable 64 Gb magnetic random-access memory 可靠的64 Gb磁性随机存取存储器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-03-24 DOI: 10.1038/s41928-025-01368-4

Katharina Zeissler

引用次数: 0

Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices 二维材料器件中单晶氧化锑的介电辅助转移

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-03-20 DOI: 10.1038/s41928-025-01353-x

Junhao Liao, Yixuan Zhao, Xiaohui Chen, Zhaoning Hu, Saiyu Bu, Yaqi Zhu, Qi Lu, Mingpeng Shang, Haotian Wu, Fangfang Li, Zhuofeng Shi, Qian Zhao, Kaicheng Jia, Jingyi Hu, Ziyi Han, Qin Xie, Xiaoxu Zhao, Jianbo Yin, Wendong Wang, Hailin Peng, Xiaohui Qiu, Yanfeng Zhang, Li Lin, Zhongfan Liu

{"title":"Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices","authors":"Junhao Liao, Yixuan Zhao, Xiaohui Chen, Zhaoning Hu, Saiyu Bu, Yaqi Zhu, Qi Lu, Mingpeng Shang, Haotian Wu, Fangfang Li, Zhuofeng Shi, Qian Zhao, Kaicheng Jia, Jingyi Hu, Ziyi Han, Qin Xie, Xiaoxu Zhao, Jianbo Yin, Wendong Wang, Hailin Peng, Xiaohui Qiu, Yanfeng Zhang, Li Lin, Zhongfan Liu","doi":"10.1038/s41928-025-01353-x","DOIUrl":"10.1038/s41928-025-01353-x","url":null,"abstract":"Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb2O3) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb2O3 allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm2 V−1 s−1 (average of 14,000 cm2 V−1 s−1) and good long-term stability. The Sb2O3 can also be transferred and used as a dielectric in molybdenum disulfide (MoS2) devices, leading to devices with an on/off ratio of 108 and minimum subthreshold swing of 64 mV dec−1. Thin films of a single-crystal dielectric—antimony oxide—can be epitaxially grown at wafer scales on graphene-covered copper surfaces and then used to transfer dielectric/graphene stacks, or be integrated as a two-dimensional dielectric onto other materials.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 4","pages":"309-321"},"PeriodicalIF":40.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143660540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fast-response electroluminescence from quantum-dot light-emitting diodes 量子点发光二极管的快速响应电致发光

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-03-13 DOI: 10.1038/s41928-025-01366-6

引用次数: 0