Nature Electronics最新文献_第9页

Author Correction: Vapour-deposited high-performance tin perovskite transistors 作者更正：气相沉积高性能锡钙钛矿晶体管

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01394-2

Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, HyoungHa Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh

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Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics 亚化学计量氧化锆作为溶液处理的可重构电子介质

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-06 DOI: 10.1038/s41928-025-01379-1

Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang

{"title":"Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics","authors":"Kangsan Kim, Jihyun Kim, Myeongjin Jung, In Soo Kim, Byoung-Soo Yu, Sang Min Won, Donghee Son, Heng Li, Zdeněk Sofer, Do Kyung Hwang, Deep Jariwala, Joohoon Kang","doi":"10.1038/s41928-025-01379-1","DOIUrl":"10.1038/s41928-025-01379-1","url":null,"abstract":"Reconfigurable devices that can switch functionalities could be used to overcome the limitations of miniaturized metal–oxide–semiconductor field-effect transistors. Conventional approaches typically involve the partial electrostatic modulation of two-dimensional semiconductors and use partial floating gates or dual-gate structures. Reconfigurable devices based on vertical van der Waals heterostructures have much simpler device structures, but lack a scalable assembly method. Here, we report a scalable reconfigurable device based on solution-processed van der Waals heterostructures. We vertically assemble thin films of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric and molybdenum disulfide (MoS2) as a semiconductor layer. The ZrO2-x/MoS2 heterostructure provides simultaneous global and local gating within a single-gate transistor configuration, modulating the spatial electric field across the device in a reconfigurable manner. Under global gating conditions, the devices function as uniform field-effect transistors with an average field-effect mobility of 10 cm2 V−1 s−1 and current on/off ratio of up to 106. Under local gating conditions, the devices function as diodes, exhibiting a current rectification ratio of around 7 × 104. By harnessing the reconfigurable characteristics, we achieve adjustable temporal photoresponse dynamics with a photoresponsivity of around 105 A W−1, high spatial uniformity and multi-spectral photodetection. We also use the approach to create a large-area reconfigurable optoelectronics array. Devices based on a vertical van der Waals heterostructure of solution-processed zirconium oxide and molybdenum disulfide can reconfigure between transistor and diode modes, and be fabricated on the wafer-scale.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 6","pages":"461-473"},"PeriodicalIF":40.9,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143910088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scaling up superconducting quantum computers 扩大超导量子计算机

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-05-05 DOI: 10.1038/s41928-025-01381-7

Anthony Megrant, Yu Chen

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A spotlight on optoelectronics 光电子学的焦点

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01387-1

引用次数: 0

Vapour-deposited high-performance tin perovskite transistors 气相沉积高性能锡钙钛矿晶体管

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-28 DOI: 10.1038/s41928-025-01380-8

Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, Hyoungha Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh

{"title":"Vapour-deposited high-performance tin perovskite transistors","authors":"Youjin Reo, Taoyu Zou, Taesu Choi, Soonhyo Kim, Ji-Young Go, Taewan Roh, Hyoungha Ryu, Yong-Sung Kim, Ao Liu, Huihui Zhu, Yong-Young Noh","doi":"10.1038/s41928-025-01380-8","DOIUrl":"10.1038/s41928-025-01380-8","url":null,"abstract":"Solution-processed tin (Sn2+)-halide perovskites can be used to create p-channel thin-film transistors (TFTs) with performance levels comparable with commercial low-temperature polysilicon technology. However, high-quality perovskite film deposition using industry-compatible production techniques remains challenging. Here we report the fabrication of p-channel Sn2+-halide perovskite TFTs using a thermal evaporation approach with inorganic caesium tin iodide (CsSnI3). We use lead chloride (PbCl2) as a reaction initiator that triggers solid-state reactions of the as-evaporated perovskite compounds. This promotes the conversion of dense and uniform perovskite films, and also modulates the intrinsically high hole density of the CsSnI3 perovskite channels. Our optimized TFTs exhibit average hole field-effect mobilities of around 33.8 cm2 V−1 s−1, on/off current ratios of around 108, and large-area fabrication uniformity. The devices also exhibit improved stability compared with solution-deposited devices. Using a thermal evaporation approach and lead chloride (PbCl2) as a reaction initiator, caesium tin iodide (CsSnI3)-based p-channel thin-film transistors can be fabricated that exhibit average hole field-effect mobilities of around 33.8 cm2 V−1 s−1 and improved stability compared with solution-deposited devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"403-410"},"PeriodicalIF":40.9,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01380-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143880393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D-printed coolers 3D 打印冷却器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-17 DOI: 10.1038/s41928-025-01384-4

Yan Huang

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Shrinking light-emitting diodes with perovskites 用钙钛矿缩小发光二极管

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-17 DOI: 10.1038/s41928-025-01385-3

Katharina Zeissler

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Monitoring physical and mental activities with skin conductance 用皮肤电导率监测体力和脑力活动

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-14 DOI: 10.1038/s41928-025-01373-7

Shenghan Wang, Guihuan Guo, Sheng Xu

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Lighting up the clock rate in electronics 点亮电子设备中的时钟频率

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-04 DOI: 10.1038/s41928-025-01367-5

Victor Torres-Company

引用次数: 0

Modulation of the anomalous Hall angle in a magnetic topological semimetal 磁性拓扑半金属中的反常霍尔角调制

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-04-02 DOI: 10.1038/s41928-025-01364-8

Jinying Yang, Yanxing Shang, Xingchen Liu, Yibo Wang, Xuebin Dong, Qingqi Zeng, Meng Lyu, Shen Zhang, Yang Liu, Binbin Wang, Hongxiang Wei, Yizheng Wu, Stuart Parkin, Gangqin Liu, Claudia Felser, Enke Liu, Baogen Shen

{"title":"Modulation of the anomalous Hall angle in a magnetic topological semimetal","authors":"Jinying Yang, Yanxing Shang, Xingchen Liu, Yibo Wang, Xuebin Dong, Qingqi Zeng, Meng Lyu, Shen Zhang, Yang Liu, Binbin Wang, Hongxiang Wei, Yizheng Wu, Stuart Parkin, Gangqin Liu, Claudia Felser, Enke Liu, Baogen Shen","doi":"10.1038/s41928-025-01364-8","DOIUrl":"10.1038/s41928-025-01364-8","url":null,"abstract":"The anomalous Hall angle (θA) is a measure of the efficiency of converting a longitudinal driving current into a transverse spin-polarized Hall current. In sensors based on the anomalous Hall effect, a large anomalous Hall angle can improve the sensitivity of magnetic field detection. However, the modulation of this angle is challenging, and magnetic materials typically have low angles of 0.1°–3°. Here we report the modulation of θA in the magnetic Weyl semimetal Co3Sn2S2. We show that the anomalous Hall angle parameter tanθA can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity. We use this scheme to demonstrate the modulation of tanθA up to a magnitude of 0.46, corresponding to an angle of around 25°. We further fabricate anomalous Hall devices using Fe-doped Co3Sn2S2 single-crystalline nanoflakes and demonstrate a Hall sensitivity of 7,028 ± 341 μΩ cm T–1 and a magnetic field detectability of 23.5 ± 1.7 nT Hz–0.5 at 1 Hz. The anomalous Hall angle parameter tanθA can be formulated as a function of the product of electrical resistivity and anomalous Hall conductivity, a scheme that allows the anomalous Hall angle in the magnetic Weyl semimetal Co3Sn2S2 to be increased to 25°.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 5","pages":"386-393"},"PeriodicalIF":40.9,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0