Nature Electronics最新文献_第9页

The quantum limits of contact resistance and ballistic transport in 2D transistors 二维晶体管中接触电阻和弹道输运的量子极限

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-07 DOI: 10.1038/s41928-024-01335-5

Deji Akinwande, Chandan Biswas, Debdeep Jena

引用次数: 0

Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices 二维光电器件的导电桥层间触点

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-05 DOI: 10.1038/s41928-025-01339-9

Jisu Jang, Jung Pyo Hong, Sang-Jun Kim, Jongtae Ahn, Byoung-Soo Yu, Jaewon Han, Kihyun Lee, Aelim Ha, Eunki Yoon, Wonsik Kim, Suyeon Jo, Hyun Woo Ko, Seon Kyu Yoon, Takashi Taniguchi, Kenji Watanabe, Hogil Baek, Dae-Yeon Kim, Kimoon Lee, Sungchul Mun, Kyu Hyoung Lee, Soohyung Park, Kwanpyo Kim, Young Jae Song, Seung Ah Lee, Hyunwoo J. Kim, Jae Won Shim, Gunuk Wang, Ji-Hoon Kang, Min-Chul Park, Do Kyung Hwang

{"title":"Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices","authors":"Jisu Jang, Jung Pyo Hong, Sang-Jun Kim, Jongtae Ahn, Byoung-Soo Yu, Jaewon Han, Kihyun Lee, Aelim Ha, Eunki Yoon, Wonsik Kim, Suyeon Jo, Hyun Woo Ko, Seon Kyu Yoon, Takashi Taniguchi, Kenji Watanabe, Hogil Baek, Dae-Yeon Kim, Kimoon Lee, Sungchul Mun, Kyu Hyoung Lee, Soohyung Park, Kwanpyo Kim, Young Jae Song, Seung Ah Lee, Hyunwoo J. Kim, Jae Won Shim, Gunuk Wang, Ji-Hoon Kang, Min-Chul Park, Do Kyung Hwang","doi":"10.1038/s41928-025-01339-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01339-9","url":null,"abstract":"Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS2) photodiode with a photoresponsivity of 0.29 A W−1, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"76 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143124529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic skyrmions achieve weighted summations in a scalable structure 磁性skyrmions在可伸缩结构中实现加权求和

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-03 DOI: 10.1038/s41928-025-01348-8

引用次数: 0

Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities 溶液处理高迁移率的晶圆级硒化铟半导体薄膜

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-03 DOI: 10.1038/s41928-025-01338-w

Jing He, Jifeng Ge, Junying Xue, Tingyi Xia, Yongping Dai, Shengqi Wang, Wenjie Li, Zhaoyang Lin

{"title":"Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities","authors":"Jing He, Jifeng Ge, Junying Xue, Tingyi Xia, Yongping Dai, Shengqi Wang, Wenjie Li, Zhaoyang Lin","doi":"10.1038/s41928-025-01338-w","DOIUrl":"10.1038/s41928-025-01338-w","url":null,"abstract":"Solution-processed two-dimensional semiconductors could be used to create electronic devices on large scales and at low cost. However, the electronic performance of devices based on such materials is typically below that of devices based on materials grown via high-temperature chemical vapour deposition. Here we report the fabrication of indium selenide (InSe) semiconductor thin films using a colloidal solution of monolayer nanosheets (monolayer purity more than 98%). The InSe thin films are assembled on 4-inch wafers with conformal and intimate van der Waals contacts between the monolayer building blocks. We use the solution-processed films to fabricate InSe transistors that exhibit electron mobilities of 90–120 cm2 V−1 s−1, current on/off ratios of up to 107 and a small current hysteresis. We also show that InSe transistors with oxide encapsulation can remain stable in air for 3 months. Indium selenide semiconductor thin films can be fabricated from a colloidal solution of monolayer nanosheets, and used to create transistors that exhibit electron mobilities of 90–120 cm2 V−1 s−1, current on/off ratios of up to 107 and a small current hysteresis.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"244-253"},"PeriodicalIF":33.7,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Betting on qubits 押注量子比特

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-025-01346-w

引用次数: 0

How we controlled the superconducting qubit 我们如何控制超导量子比特

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-024-01336-4

Yasunobu Nakamura

引用次数: 0

How to scale the electronic control systems of a quantum computer 如何扩展量子计算机的电子控制系统

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-024-01331-9

Anton Potočnik

引用次数: 0

The success and failure of quantum computing start-ups 量子计算初创企业的成败

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-025-01337-x

Barry C. Sanders

引用次数: 0

A universal inverse-design magnonic device 一种通用反设计磁振器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-024-01333-7

Noura Zenbaa, Claas Abert, Fabian Majcen, Michael Kerber, Rostyslav O. Serha, Sebastian Knauer, Qi Wang, Thomas Schrefl, Dieter Suess, Andrii V. Chumak

{"title":"A universal inverse-design magnonic device","authors":"Noura Zenbaa, Claas Abert, Fabian Majcen, Michael Kerber, Rostyslav O. Serha, Sebastian Knauer, Qi Wang, Thomas Schrefl, Dieter Suess, Andrii V. Chumak","doi":"10.1038/s41928-024-01333-7","DOIUrl":"10.1038/s41928-024-01333-7","url":null,"abstract":"Magnons, the quanta of spin waves, can potentially be used for energy-efficient data processing. The approach can, in particular, leverage the concept of inverse design, which involves defining a desired functionality and then using a feedback-loop algorithm to optimize device design. Here we report a simulation-free inverse-design device that can implement various radiofrequency components and can process data in the gigahertz range. The device consists of a square array of independent direct current loops on top of a yttrium iron garnet film that generate a complex reconfigurable magnetic medium. We use two feedback-loop algorithms—direct search optimization and a genetic algorithm—to configure the field patterns and create a linear radiofrequency notch filter and a demultiplexer. A device that consists of a square array of independent direct current loops on top of a film of yttrium iron garnet can generate a complex reconfigurable magnetic medium and be used to solve inverse-design problems experimentally without the use of numerical simulations.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 2","pages":"106-115"},"PeriodicalIF":33.7,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143056659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Making diamonds with sticky tape 用胶带做钻石

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-27 DOI: 10.1038/s41928-025-01343-z

Matthew Parker

引用次数: 0