Nature Electronics最新文献_第9页

Organic electrochemical neurons for neuromorphic perception 用于神经形态感知的有机电化学神经元

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01200-5

Padinhare Cholakkal Harikesh, Deyu Tu, Simone Fabiano

引用次数: 0

Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses 垂直生长的金属纳米片与原子层沉积电介质的集成，用于具有亚纳米电容等效厚度的晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01202-3

Lei Zhang, Zhaochao Liu, Wei Ai, Jiabiao Chen, Zunxian Lv, Bing Wang, Mingjian Yang, Feng Luo, Jinxiong Wu

{"title":"Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses","authors":"Lei Zhang, Zhaochao Liu, Wei Ai, Jiabiao Chen, Zunxian Lv, Bing Wang, Mingjian Yang, Feng Luo, Jinxiong Wu","doi":"10.1038/s41928-024-01202-3","DOIUrl":"10.1038/s41928-024-01202-3","url":null,"abstract":"Integrating thin atomic-layer-deposited dielectrics with two-dimensional (2D) semiconductors could be used to fabricate 2D transistors with sub-1 nm capacitance-equivalent thicknesses. However, non-uniform nucleation from atomic-layer deposition on inert surfaces and subsequent high-energy metal evaporation can make atomically thin dielectrics non-insulating. Here, we report a bismuth-oxide-assisted chemical vapour deposition method to synthesize single-crystalline metal nanosheets with atomically flat surfaces. The nanosheets grow vertically on a substrate and can be easily transferred to a target substrate through polymer-free mechanical pressing. We show that palladium nanosheets offer an excellent surface for atomic-layer deposition of flat aluminium oxide (Al2O3) and hafnium oxide (HfO2) dielectrics with sub-3 nm thicknesses. These can then be laminated onto few-layer molybdenum disulfide (MoS2) as a gate stack with a capacitance-equivalent thickness of 0.9 nm and a capacitance density of around 3.9 μF cm−2. Our MoS2 top-gated transistors with a 2-nm-thick Al2O3 or HfO2 dielectric exhibit leakage currents of 10−6 A cm−2, low operating voltages of around 0.45 V and a hysteresis of less than 1 mV. Vertical metal nanosheets with atomically flat surfaces grown with a bismuth-oxide-assisted chemical vapour deposition method can be used to make metal–oxide dielectric stacks and laminated onto two-dimensional semiconductors to create transistors with sub-1 nm capacitance-equivalent thicknesses.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Three-dimensional integrated metal-oxide transistors 三维集成金属氧化物晶体管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-08 DOI: 10.1038/s41928-024-01205-0

Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li

{"title":"Three-dimensional integrated metal-oxide transistors","authors":"Saravanan Yuvaraja, Hendrik Faber, Mritunjay Kumar, Na Xiao, Glen Isaac Maciel García, Xiao Tang, Thomas D. Anthopoulos, Xiaohang Li","doi":"10.1038/s41928-024-01205-0","DOIUrl":"10.1038/s41928-024-01205-0","url":null,"abstract":"The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development of scalable processes for integrating three-dimensional TFT devices is challenging. Here, we report the monolithic three-dimensional integration of indium oxide (In2O3) TFTs on a silicon/silicon dioxide (Si/SiO2) substrate at room temperature. We use an approach that is compatible with complementary metal–oxide–semiconductor (CMOS) processes to stack ten n-channel In2O3 TFTs. Different architectures—including bottom-, top- and dual-gate TFTs—can be fabricated at different layers in the stack. Our dual-gate devices exhibit enhanced electrical performance with a maximum field-effect mobility of 15 cm2 V−1 s−1, a subthreshold swing of 0.4 V dec−1 and a current on/off ratio of 108. By monolithically integrating dual-gate In2O3 TFTs at different locations in the stack, we created unipolar invertor circuits with a signal gain of around 50 and wide noise margins. The dual-gate devices also allow fine-tuning of the invertors to achieve symmetric voltage-transfer characteristics and optimal noise margins. A room-temperature approach to monolithic three-dimensional thin-film integration can be used to stack ten layers of n-channel indium oxide transistors on silicon/silicon dioxide substrates, while incorporating a range of architectures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01205-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response 一种基于有机光电探测器的微型光学光谱仪，具有电可调光谱响应

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-01 DOI: 10.1038/s41928-024-01199-9

Xie He, Yuanzhe Li, Hui Yu, Guodong Zhou, Lingyi Ke, Hin-Lap Yip, Ni Zhao

{"title":"A microsized optical spectrometer based on an organic photodetector with an electrically tunable spectral response","authors":"Xie He, Yuanzhe Li, Hui Yu, Guodong Zhou, Lingyi Ke, Hin-Lap Yip, Ni Zhao","doi":"10.1038/s41928-024-01199-9","DOIUrl":"10.1038/s41928-024-01199-9","url":null,"abstract":"Miniaturized optical spectrometers could be of use in portable and wearable applications. Such devices have typically been based on arrays of photodetectors that provide distinct spectral responses or use complex miniaturized dispersive optics. However, these approaches often result in large centimetre-sized systems. Here we report a microsized optical spectrometer that is based on an optical-spacer-integrated photomultiplication-type organic photodetector with a bias-tunable spectral response. The approach allows the computational reconstruction of an incident light spectrum from photocurrents measured under a set of different bias voltages. The device, which has a footprint of 0.0004 cm2, is capable of broadband operation across the entire visible wavelength with a sub-5-nm resolution. To illustrate the capabilities of this approach, we fabricate an 8 × 8 spectroscopic sensor array that can be used for hyperspectral imaging. Optical-spacer-integrated photomultiplication organic photodetectors with electrically tunable spectral response can provide high-resolution optical characterization across the visible spectrum.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications 用于毫米波射频应用的基于多层六方氮化硼的薄膜电路

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-01 DOI: 10.1038/s41928-024-01192-2

Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza

{"title":"Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications","authors":"Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza","doi":"10.1038/s41928-024-01192-2","DOIUrl":"10.1038/s41928-024-01192-2","url":null,"abstract":"Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz. An optimized pulsed voltage write–verify switching approach can be used to improve the switching performance of memristors based on hexagonal boron nitride for radiofrequency circuit applications.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Permeable, three-dimensional integrated electronic skins with stretchable hybrid liquid metal solders 使用可拉伸混合液态金属焊料的可渗透三维集成电子表皮

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-07-01 DOI: 10.1038/s41928-024-01189-x

Qiuna Zhuang, Kuanming Yao, Chi Zhang, Xian Song, Jingkun Zhou, Yufei Zhang, Qiyao Huang, Yizhao Zhou, Xinge Yu, Zijian Zheng

{"title":"Permeable, three-dimensional integrated electronic skins with stretchable hybrid liquid metal solders","authors":"Qiuna Zhuang, Kuanming Yao, Chi Zhang, Xian Song, Jingkun Zhou, Yufei Zhang, Qiyao Huang, Yizhao Zhou, Xinge Yu, Zijian Zheng","doi":"10.1038/s41928-024-01189-x","DOIUrl":"10.1038/s41928-024-01189-x","url":null,"abstract":"The development of wearable and on-skin electronics requires high-density stretchable electronic systems that can conform to soft tissue, operate continuously and provide long-term biocompatibility. Most stretchable electronic systems have low-density integration and are wired with external printed circuit boards, which limits functionality, deteriorates user experience and impedes long-term usability. Here we report an intrinsically permeable, three-dimensional integrated electronic skin. The system combines high-density inorganic electronic components with organic stretchable fibrous substrates using three-dimensional patterned, multilayered liquid metal circuits and stretchable hybrid liquid metal solder. The electronic skin exhibits high softness, durability, fabric-like permeability to air and moisture and sufficient biocompatibility for on-skin attachment for a week. We use the platform to create wireless, battery-powered and battery-free skin-attached bioelectronic systems that offer complex system-level functions, including the stable sensing of biosignals, signal processing and analysis, electrostimulation and wireless communication. An electronic skin that connects rigid inorganic electronic components with a multilayered stretchy liquid metal fibre mat using a hybrid liquid metal solder can offer high integration density while remaining soft, permeable and biocompatible.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Build it up 建立起来

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-06-27 DOI: 10.1038/s41928-024-01206-z

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Advanced packaging of chiplets for future computing needs 满足未来计算需求的先进芯片组封装

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-06-27 DOI: 10.1038/s41928-024-01175-3

Debendra Das Sharma, Ravi V. Mahajan

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Observation of orbital pumping 观测轨道抽水

IF 33.7 1区工程技术