Nature Electronics最新文献_第4页

Photodiodes promote electrochemical synthesis 光电二极管促进了电化学合成

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-21 DOI: 10.1038/s41928-025-01360-y

Yan Huang

引用次数: 0

Growing single crystals of molybdenum disulfide at scale 大规模生长二硫化钼单晶

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-19 DOI: 10.1038/s41928-025-01358-6

Katharina Zeissler

引用次数: 0

Free-standing perovskites for micro-LEDs 用于微型led的独立钙钛矿

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-19 DOI: 10.1038/s41928-025-01359-5

Matthew Parker

引用次数: 0

A memristor-based adaptive neuromorphic decoder for brain–computer interfaces 基于忆阻器的脑机接口自适应神经形态解码器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-17 DOI: 10.1038/s41928-025-01340-2

Zhengwu Liu, Jie Mei, Jianshi Tang, Minpeng Xu, Bin Gao, Kun Wang, Sanchuang Ding, Qi Liu, Qi Qin, Weize Chen, Yue Xi, Yijun Li, Peng Yao, Han Zhao, Ngai Wong, He Qian, Bo Hong, Tzyy-Ping Jung, Dong Ming, Huaqiang Wu

{"title":"A memristor-based adaptive neuromorphic decoder for brain–computer interfaces","authors":"Zhengwu Liu, Jie Mei, Jianshi Tang, Minpeng Xu, Bin Gao, Kun Wang, Sanchuang Ding, Qi Liu, Qi Qin, Weize Chen, Yue Xi, Yijun Li, Peng Yao, Han Zhao, Ngai Wong, He Qian, Bo Hong, Tzyy-Ping Jung, Dong Ming, Huaqiang Wu","doi":"10.1038/s41928-025-01340-2","DOIUrl":"https://doi.org/10.1038/s41928-025-01340-2","url":null,"abstract":"Practical brain–computer interfaces should be able to decipher brain signals and dynamically adapt to brain fluctuations. This, however, requires a decoder capable of flexible updates with energy-efficient decoding capabilities. Here we report a neuromorphic and adaptive decoder for brain–computer interfaces, which is based on a 128k-cell memristor chip. Our approach features a hardware-efficient one-step memristor decoding strategy that allows the interface to achieve software-equivalent decoding performance. Furthermore, we show that the system can be used for the real-time control of a drone in four degrees of freedom. We also develop an interactive update framework that allows the memristor decoder and the changing brain signals to adapt to each other. We illustrate the capabilities of this co-evolution of the brain and memristor decoder over an extended interaction task involving ten participants, which leads to around 20% higher accuracy than an interface without co-evolution.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"80 4 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Video processing on a self-calibrating analogue memristor array 基于自校准模拟忆阻器阵列的视频处理

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-11 DOI: 10.1038/s41928-025-01341-1

Muhammad Umair Khan, Baker Mohammad

引用次数: 0

The quantum limits of contact resistance and ballistic transport in 2D transistors 二维晶体管中接触电阻和弹道输运的量子极限

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-07 DOI: 10.1038/s41928-024-01335-5

Deji Akinwande, Chandan Biswas, Debdeep Jena

引用次数: 0

Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices 二维光电器件的导电桥层间触点

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-05 DOI: 10.1038/s41928-025-01339-9

Jisu Jang, Jung Pyo Hong, Sang-Jun Kim, Jongtae Ahn, Byoung-Soo Yu, Jaewon Han, Kihyun Lee, Aelim Ha, Eunki Yoon, Wonsik Kim, Suyeon Jo, Hyun Woo Ko, Seon Kyu Yoon, Takashi Taniguchi, Kenji Watanabe, Hogil Baek, Dae-Yeon Kim, Kimoon Lee, Sungchul Mun, Kyu Hyoung Lee, Soohyung Park, Kwanpyo Kim, Young Jae Song, Seung Ah Lee, Hyunwoo J. Kim, Jae Won Shim, Gunuk Wang, Ji-Hoon Kang, Min-Chul Park, Do Kyung Hwang

{"title":"Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices","authors":"Jisu Jang, Jung Pyo Hong, Sang-Jun Kim, Jongtae Ahn, Byoung-Soo Yu, Jaewon Han, Kihyun Lee, Aelim Ha, Eunki Yoon, Wonsik Kim, Suyeon Jo, Hyun Woo Ko, Seon Kyu Yoon, Takashi Taniguchi, Kenji Watanabe, Hogil Baek, Dae-Yeon Kim, Kimoon Lee, Sungchul Mun, Kyu Hyoung Lee, Soohyung Park, Kwanpyo Kim, Young Jae Song, Seung Ah Lee, Hyunwoo J. Kim, Jae Won Shim, Gunuk Wang, Ji-Hoon Kang, Min-Chul Park, Do Kyung Hwang","doi":"10.1038/s41928-025-01339-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01339-9","url":null,"abstract":"Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS2) photodiode with a photoresponsivity of 0.29 A W−1, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"76 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143124529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic skyrmions achieve weighted summations in a scalable structure 磁性skyrmions在可伸缩结构中实现加权求和

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-03 DOI: 10.1038/s41928-025-01348-8

引用次数: 0

Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities 溶液处理高迁移率的晶圆级硒化铟半导体薄膜

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-03 DOI: 10.1038/s41928-025-01338-w

Jing He, Jifeng Ge, Junying Xue, Tingyi Xia, Yongping Dai, Shengqi Wang, Wenjie Li, Zhaoyang Lin

{"title":"Solution-processed wafer-scale indium selenide semiconductor thin films with high mobilities","authors":"Jing He, Jifeng Ge, Junying Xue, Tingyi Xia, Yongping Dai, Shengqi Wang, Wenjie Li, Zhaoyang Lin","doi":"10.1038/s41928-025-01338-w","DOIUrl":"10.1038/s41928-025-01338-w","url":null,"abstract":"Solution-processed two-dimensional semiconductors could be used to create electronic devices on large scales and at low cost. However, the electronic performance of devices based on such materials is typically below that of devices based on materials grown via high-temperature chemical vapour deposition. Here we report the fabrication of indium selenide (InSe) semiconductor thin films using a colloidal solution of monolayer nanosheets (monolayer purity more than 98%). The InSe thin films are assembled on 4-inch wafers with conformal and intimate van der Waals contacts between the monolayer building blocks. We use the solution-processed films to fabricate InSe transistors that exhibit electron mobilities of 90–120 cm2 V−1 s−1, current on/off ratios of up to 107 and a small current hysteresis. We also show that InSe transistors with oxide encapsulation can remain stable in air for 3 months. Indium selenide semiconductor thin films can be fabricated from a colloidal solution of monolayer nanosheets, and used to create transistors that exhibit electron mobilities of 90–120 cm2 V−1 s−1, current on/off ratios of up to 107 and a small current hysteresis.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"244-253"},"PeriodicalIF":33.7,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Betting on qubits 押注量子比特

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-30 DOI: 10.1038/s41928-025-01346-w

引用次数: 0