Nature Electronics最新文献_第4页

The potential of superconducting electronics 超导电子学的潜力

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-29 DOI: 10.1038/s41928-025-01402-5

引用次数: 0

Glass microfibres guide acoustic waves in textiles 玻璃微纤维在纺织品中引导声波

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-29 DOI: 10.1038/s41928-025-01395-1

Chu Ma

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Measuring wound healing with gases 用气体测量伤口愈合

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-22 DOI: 10.1038/s41928-025-01400-7

Matthew Parker

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Autonomous aerial drones learn aerobatic manoeuvres 自主无人机学习特技飞行

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-22 DOI: 10.1038/s41928-025-01399-x

Katharina Zeissler

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Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications 氮化镓多通道器件，锁存诱发低于60 mv / 10年的亚阈值斜坡用于射频应用

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-22 DOI: 10.1038/s41928-025-01391-5

Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin A. Parke, Robert S. Howell, Martin Kuball

{"title":"Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications","authors":"Akhil S. Kumar, Stefano Dalcanale, Michael J. Uren, James W. Pomeroy, Matthew D. Smith, Justin A. Parke, Robert S. Howell, Martin Kuball","doi":"10.1038/s41928-025-01391-5","DOIUrl":"https://doi.org/10.1038/s41928-025-01391-5","url":null,"abstract":"Aluminium gallium nitride/gallium nitride (AlGaN/GaN)-based superlattice castellated field-effect transistors are a potential basis for high-power radiofrequency amplifiers and switches in future radars. The reliability of such devices, however, is not well understood. Here we report transistor latching in multichannel GaN transistors. At the latching condition, drain current sharply transits from an off-state value to a high on-state value with a slope less than 60 mV per decade. Current–voltage measurements, simulations and correlated electroluminescent emission at the latching condition indicate that triggering of fin-width-dependent localized impact ionization is responsible for the latching. This localization is attributed to the presence of fin-width variation due to variability in the fabrication process. The latching condition is reversible and non-degrading, and we show that it can lead to improvement in the transconductance characteristics of transistors, implying improved linearity and power in radiofrequency power amplifiers.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"237 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144113421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrasound-induced wireless implantable stimulator for adaptive pain management 用于适应性疼痛管理的超声诱导无线植入式刺激器

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-20 DOI: 10.1038/s41928-025-01377-3

引用次数: 0

A smart acoustic textile for health monitoring 用于健康监测的智能声学纺织品

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-19 DOI: 10.1038/s41928-025-01386-2

Yingqiang Wang, Chaochao Sun, Daniel Ahmed

引用次数: 0

Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems 用于集成系统的自修复可伸缩晶体管和电路的可重构组装

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-19 DOI: 10.1038/s41928-025-01389-z

Jaepyo Jang, Hyongsuk Choo, Sangkyu Lee, Jihyang Song, Kyuha Park, Jiyong Yoon, Duhwan Seong, Soojung An, Hyunjin Jung, Jaewon Ju, Juncheol Kang, Joohoon Kang, In Soo Kim, Mikyung Shin, Jin-Hong Park, Donghee Son

{"title":"Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems","authors":"Jaepyo Jang, Hyongsuk Choo, Sangkyu Lee, Jihyang Song, Kyuha Park, Jiyong Yoon, Duhwan Seong, Soojung An, Hyunjin Jung, Jaewon Ju, Juncheol Kang, Joohoon Kang, In Soo Kim, Mikyung Shin, Jin-Hong Park, Donghee Son","doi":"10.1038/s41928-025-01389-z","DOIUrl":"https://doi.org/10.1038/s41928-025-01389-z","url":null,"abstract":"Self-healing soft electronic devices that can recover their mechanical and electrical properties are of use in the development of long-term wearable and implantable electronic systems. However, creating self-healing and stretchable integrated circuits is challenging due to the absence of suitable materials and sufficiently customizable assembly technology. Here we report a reconfigurable and scalable assembly method for self-healing, stretchable, active-type devices, including thin-film transistors, active-matrix arrays and logic gates. The self-healing, stretchable, thin-film transistor can easily be fabricated by transfer-printing of intrinsically soft constituent films: an insulating self-healing polymer for the gate dielectric, a semiconducting nanocomposite for the active channel and a carbon-nanotube-embedded composite for the electrodes. Our assembly method allows the thin-film transistors to be extended to wearable and implantable 5 × 5 active-matrix, soft and self-healing transistor arrays. These arrays can multiplex pressure data recorded from a 5 × 5 tactile sensor array, provide feedback control to an array of soft and self-healing optoelectronic pixels, and maintain electrical performance even when implanted in the subcutaneous tissue of a rodent model. To demonstrate user-on-demand functionality, we combined, disassembled and recombined thin-film transistors and load resistors into three different types of logic gates (inverter, NAND and NOR circuits).","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"54 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144088210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Channel and contact length scaling of two-dimensional transistors using composite metal electrodes 利用复合金属电极的二维晶体管沟道和接触长度缩放

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01382-6

Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou

{"title":"Channel and contact length scaling of two-dimensional transistors using composite metal electrodes","authors":"Sifan Chen, Shuiyuan Wang, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou","doi":"10.1038/s41928-025-01382-6","DOIUrl":"https://doi.org/10.1038/s41928-025-01382-6","url":null,"abstract":"Two-dimensional semiconductors are a potential channel material for transistors with highly scaled contacted poly pitch (CPP). Total scaling of CPP requires the simultaneous reduction of channel length and contact length. However, the physical width limit of contact metals makes it difficult to form effective small-size contacts. In addition, decreasing the contact length below the transfer length induces a current crowding phenomenon, resulting in an exponential increase in contact resistance and poor device performance. Here we show that composite metal contact electrodes of gold/titanium/nickel can offer shape-preserving effects that allow the extreme scaling of contact length in two-dimensional transistors while maintaining a low contact resistance. We use the approach to create molybdenum disulfide transistors with a CPP of around 60 nm—contact length and channel length scaled to around 30 nm and transfer length scaled to under 30 nm—that exhibit on/off ratios over 108, on-state currents of around 300 μA μm−1 and off-state currents down to around 1 pA μm−1. We also fabricate arrays of all-out scaled two-dimensional transistors that exhibit low variability in key performance metrics and demonstrate their integration into advanced logic circuits.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"38 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143933343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Scaling the contacted poly pitch of 2D transistors 二维晶体管接触多节距的缩放

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-05-12 DOI: 10.1038/s41928-025-01383-5

Xue Chen, Su-Ting Han, Ye Zhou

引用次数: 0