Nature Electronics最新文献_第4页

An all-electric on-chip nanoplasma pulse generator for picosecond field-free spin–orbit torque switching in magnetic heterostructures 磁异质结构中皮秒无场自旋轨道转矩开关的全电片上纳米等离子体脉冲发生器

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-08 DOI: 10.1038/s41928-026-01699-w

Xinhou Chen, Shishun Zhao, Yuchen Pu, Qu Yang, Hyunsoo Yang

{"title":"An all-electric on-chip nanoplasma pulse generator for picosecond field-free spin–orbit torque switching in magnetic heterostructures","authors":"Xinhou Chen, Shishun Zhao, Yuchen Pu, Qu Yang, Hyunsoo Yang","doi":"10.1038/s41928-026-01699-w","DOIUrl":"10.1038/s41928-026-01699-w","url":null,"abstract":"Spin–orbit torque can be used to electrically switch magnetization via picosecond current pulses and could be used to develop energy-efficient magnetic random-access memory. However, the generation of picosecond pulses typically requires bulky, high-power laser systems, which limits chip-level integration. Here we describe an all-electric on-chip nanoplasma pulse generator that can be used to produce picosecond pulses (down to 6.4 ps) with amplitudes exceeding 100 V and a switching speed of 21 V ps−1. We use the generator to demonstrate picosecond field-free spin–orbit torque magnetization switching in magnetic trilayers of cobalt/platinum/cobalt. We show that reducing the pulse width from 100 μs down to 6.4 ps lowers the writing energy by four orders of magnitude, and we find that ultrafast Joule heating contributes to the enhanced efficiency observed in the picosecond regime. A nanoplasma pulse generator that can produce current pulses with widths down to 6.4 ps and amplitudes exceeding 100 V can control field-free spin–orbit torque magnetization switching in magnetic heterostructures.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 10","pages":"1132-1139"},"PeriodicalIF":42.3,"publicationDate":"2026-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148933181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance tunnel-junction selectors with graded tunnel barriers based on five-layer van der Waals heterostructures 基于五层范德华异质结构的梯度隧道势垒高性能隧道结选择器

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-07 DOI: 10.1038/s41928-026-01704-2

Hefei Liu, Han-Ting Liao, Mengjiao Li, Ning Yang, Ting-Hao Hsu, Ruoyu Zhao, Yichun Xu, Seung Ju Kim, Yongwei Ni, Vinay Chenna, Krishnamurthy Mahalingam, Cynthia Bowers, Sabyasachi Ganguli, Ajit K. Roy, Kenji Watanabe, Takashi Taniguchi, Hossein Hashemi, Jing Guo, Madan Dubey, Qing Wu, Han Wang, J. Joshua Yang

{"title":"High-performance tunnel-junction selectors with graded tunnel barriers based on five-layer van der Waals heterostructures","authors":"Hefei Liu, Han-Ting Liao, Mengjiao Li, Ning Yang, Ting-Hao Hsu, Ruoyu Zhao, Yichun Xu, Seung Ju Kim, Yongwei Ni, Vinay Chenna, Krishnamurthy Mahalingam, Cynthia Bowers, Sabyasachi Ganguli, Ajit K. Roy, Kenji Watanabe, Takashi Taniguchi, Hossein Hashemi, Jing Guo, Madan Dubey, Qing Wu, Han Wang, J. Joshua Yang","doi":"10.1038/s41928-026-01704-2","DOIUrl":"10.1038/s41928-026-01704-2","url":null,"abstract":"Selectors are required to unlock the potential scalability of memory crossbar arrays and achieve three-dimensional stacking. However, the development of a two-terminal, stackable selector that meets key performance metrics—including large selectivity, high endurance, fast response speed, negligible cycling variation, minimal temperature dependence and good interdevice uniformity—remains a challenge. Here we report tunnel-junction selectors that are based on five vertically stacked van der Waals layers. The selectors are made of graphene/molybdenum disulfide/primary tunnel barrier/molybdenum disulfide/graphene heterostructures. We develop a theoretical model to predict the characteristics of selectors with a graded tunnel barrier, and use it to guide the design of two structures with hexagonal boron nitride and gallium sulfide as the primary tunnel barriers. The device with hexagonal boron nitride exhibits a nonlinearity above 107, an endurance of more than 1012 cycles, a switching speed of less than 20 ns, minimal temperature dependence and low device-to-device variability. The device with gallium sulfide can operate at a voltage of only 2.5 V and exhibit a nonlinearity above 106. We show that the selectors can be integrated into one-selector–one-resistor and one-selector–one-capacitor memory cells for both volatile and non-volatile memory technologies. Using five vertically stacked van der Waals layers, a tunnel-junction selector can be created that exhibits a nonlinearity above 107, an endurance of more than 1012 cycles, a switching speed of less than 20 ns, minimal temperature dependence and low device-to-device variability.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 10","pages":"1122-1131"},"PeriodicalIF":42.3,"publicationDate":"2026-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148899603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

How we discovered ferroelectricity in hafnium oxide thin films 我们是如何在氧化铪薄膜中发现铁电性的

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-04 DOI: 10.1038/s41928-026-01693-2

Tim S. Böscke, Ulrich Böttger, Uwe Schroeder

引用次数: 0

A magnonic ruler for microwaves 微波的磁尺子

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-04 DOI: 10.1038/s41928-026-01701-5

Bimu Yao, Wei Lu

引用次数: 0

Subnanometre ferroelectricity in strain-engineered gallium oxide 应变工程氧化镓的亚纳米铁电性

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-04 DOI: 10.1038/s41928-026-01702-4

Zhao Guan, Ni Zhong

引用次数: 0

Ferroelectricity in six-ångström-thick two-dimensional gallium oxide 六层-ångström-thick二维氧化镓的铁电性

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-09-01 DOI: 10.1038/s41928-026-01694-1

Tong Jiang, Han Chen, Yubo Yuan, Xiang Xu, Junwei Cao, Hao Wang, Xuechun Sun, Junshuai Li, Yaqing Ma, Huaze Zhu, Wenbin Li, Wei Kong

{"title":"Ferroelectricity in six-ångström-thick two-dimensional gallium oxide","authors":"Tong Jiang, Han Chen, Yubo Yuan, Xiang Xu, Junwei Cao, Hao Wang, Xuechun Sun, Junshuai Li, Yaqing Ma, Huaze Zhu, Wenbin Li, Wei Kong","doi":"10.1038/s41928-026-01694-1","DOIUrl":"10.1038/s41928-026-01694-1","url":null,"abstract":"Atomic-scale ferroelectric films could be used to build high-density, low-power devices. However, ferroelectric materials typically suffer from stability and voltage-scaling challenges at extreme thinness. Here we report ferroelectricity in single-crystalline two-dimensional gallium oxide (Ga2O3), a wide-bandgap semiconductor. The material is just 6 Å thick and offers both high retention and thermal stability. We show that epitaxial β-Ga2O3 can be exfoliated down to a half-unit-cell thickness via a self-limiting exfoliation mechanism, which leads to a biaxial-strain-induced phase transition into a ferroelectric layered structure. Strain modulation reduces the polarization switching voltage to 0.8 V, meeting the voltage-scaling requirements of complementary metal–oxide–semiconductor technology. Theoretical calculations show that switching is driven by covalent bond reconstruction, effectively countering depolarization and enhancing stability. We also integrate ferroelectric two-dimensional Ga2O3 onto silicon using a low-temperature, back-end-of-line-compatible process. When β-Ga2O3 is thinned to the half-unit-cell limit, it can undergo a strain-induced phase transition that leads to intrinsic ferroelectricity with a polarization switching voltage of 0.8 V, meeting the voltage-scaling requirements of complementary metal–oxide–semiconductor technology.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"1007-1017"},"PeriodicalIF":42.3,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148895135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics 高效电力电子中iii -氮化物异质结构的本征极化超结

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-28 DOI: 10.1038/s41928-026-01691-4

Luca Mazzone, Yuan Zong, Hongkeng Zhu, Alessandro Mauro, Elison Matioli

{"title":"Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics","authors":"Luca Mazzone, Yuan Zong, Hongkeng Zhu, Alessandro Mauro, Elison Matioli","doi":"10.1038/s41928-026-01691-4","DOIUrl":"10.1038/s41928-026-01691-4","url":null,"abstract":"III-nitride semiconductors combine a wide bandgap with low sheet resistance and, thus, can be used for efficient power electronics. Their lateral architecture also enables monolithic integration on cost-effective silicon. However, electric-field crowding, as well as surface and buffer trapping, limit the breakdown voltage, degrade dynamic performance and reduce reliability. Here we report intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics. We use the spontaneous and piezoelectric polarization fields to induce matched mobile electrons in a two-dimensional electron gas and mobile holes in a two-dimensional hole gas, forming an intrinsically charge-balanced superjunction without intentional doping. With an ohmic contact to the two-dimensional hole gas, both carrier types can be dynamically depleted during switching, which preserves drift-region charge neutrality, producing a nearly uniform electric field and increasing the breakdown voltage under operating conditions. We use the approach to create gallium-nitride-on-silicon polarization superjunction Schottky barrier diodes with a breakdown voltage exceeding 3.9 kV and a specific ON resistance as low as 4.7 mΩ cm2, as well as polarization superjunction transistors with a breakdown voltage exceeding 3.4 kV. The devices exhibit a near-ideal dynamic ON-resistance degradation of less than 15% up to 3 kV, as well as repeatable, temperature-stable and avalanche-like breakdown. Polarization fields in III-nitride heterostructures can be used to form intrinsically charge-balanced superjunctions without intentional doping, allowing Schottky barrier diodes and transistors on gallium-nitride-on-silicon substrates to be created that exhibit high breakdown voltages.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"1058-1066"},"PeriodicalIF":42.3,"publicationDate":"2026-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-026-01691-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148853466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Robot return 机器人返回

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-21 DOI: 10.1038/s41928-026-01697-y

引用次数: 0

On-chip broadband magnonic frequency combs based on multi-tone excitation 基于多音激励的片上宽带磁振频率梳

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-20 DOI: 10.1038/s41928-026-01686-1

Weizhi Yan, Jiahui Bi, Yifan Wang, Lukáš Flajšman, Sebastiaan van Dijken, Huajun Qin

{"title":"On-chip broadband magnonic frequency combs based on multi-tone excitation","authors":"Weizhi Yan, Jiahui Bi, Yifan Wang, Lukáš Flajšman, Sebastiaan van Dijken, Huajun Qin","doi":"10.1038/s41928-026-01686-1","DOIUrl":"10.1038/s41928-026-01686-1","url":null,"abstract":"Magnonic frequency combs—the magnetic analogue of optical frequency combs—consist of evenly spaced spin-wave spectral lines and are of potential use in applications such as metrology, spectroscopy and information processing. However, their narrow bandwidths and small number of comb lines limit practical implementation. Here we report an on-chip broadband magnonic frequency comb based on multi-tone excitation. The octave-spanning magnonic frequency comb is generated at low power thresholds in a continuous yttrium iron garnet thin film. It is driven by spin-wave modulation instability stemming from four-magnon scattering, a nonlinear process validated by micromagnetic simulations. Our magnonic frequency combs exhibit long decay lengths, reaching up to hundreds of micrometres, and offer broad tunability in both the number of comb lines and their frequency spacing. We demonstrate, in particular, a comb with over 2,100 comb lines and densities of up to 200 lines per kilohertz. We also create a magnonic ruler that uses this finely structured spectra to detect microwave frequencies with high precision. A multi-tone excitation technique can be used to generate octave-spanning magnonic frequency combs with thousands of lines in continuous yttrium iron garnet thin films.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"997-1006"},"PeriodicalIF":42.3,"publicationDate":"2026-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148769158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Programmable polyphasic stimulation with bioresorbable phototransistors 生物可吸收光电晶体管的可编程多相刺激

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-19 DOI: 10.1038/s41928-026-01682-5

Xiao Wan, Liupeng Zhao, Yang Luo, Xiaodong Li, Jun Chen

引用次数: 0