Nature Electronics最新文献_第4页

An integrated-circuit-based probabilistic computer that uses voltage-controlled magnetic tunnel junctions as its entropy source 一种以电压控制磁隧道结为熵源的集成电路概率计算机

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-13 DOI: 10.1038/s41928-025-01439-6

Christian Duffee, Jordan Athas, Yixin Shao, Noraica Davila Melendez, Eleonora Raimondo, Jordan A. Katine, Kerem Y. Camsari, Giovanni Finocchio, Pedram Khalili Amiri

{"title":"An integrated-circuit-based probabilistic computer that uses voltage-controlled magnetic tunnel junctions as its entropy source","authors":"Christian Duffee, Jordan Athas, Yixin Shao, Noraica Davila Melendez, Eleonora Raimondo, Jordan A. Katine, Kerem Y. Camsari, Giovanni Finocchio, Pedram Khalili Amiri","doi":"10.1038/s41928-025-01439-6","DOIUrl":"10.1038/s41928-025-01439-6","url":null,"abstract":"Probabilistic Ising machines could be used to solve computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions are potential entropy sources for such Ising machines. However, scaling up stochastic magnetic tunnel junction probabilistic Ising machines requires the fine control of a small magnetic energy barrier and duplication of area-intensive digital-to-analogue converter elements across large numbers of devices. The non-spintronic components of these machines are also typically created using general-purpose processors or field-programmable gate arrays. Here we report a probabilistic computer that is based on an application-specific integrated circuit fabricated using 130-nm foundry complementary metal–oxide–semiconductor technology and uses voltage-controlled magnetic tunnel junctions as its entropy source. With the system, we implement integer factorization as a representative hard optimization problem using probabilistic Ising-machine-based invertible logic gates created with 1,143 probabilistic bits. The application-specific integrated circuit uses stochastic bit sequences read from an adjacent voltage-controlled magnetic tunnel junction chip. The magnetic tunnel junctions are thermally stable in the absence of a voltage and synchronously generate random bits without the use of digital-to-analogue converter elements using the voltage-controlled magnetic anisotropy effect. An application-specific integrated circuit that is fabricated in 130-nm foundry complementary metal–oxide–semiconductor technology, and uses stochastic bit sequences read from an adjacent voltage-controlled magnetic tunnel junction chip, can be used to solve integer factorization problems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 9","pages":"784-793"},"PeriodicalIF":40.9,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144824878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simplifying primary electrical standards 简化初级电气标准

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-12 DOI: 10.1038/s41928-025-01423-0

Stephen P. Giblin

引用次数: 0

A unified realization of electrical quantities from the quantum International System of Units 从量子国际单位制统一实现的电量

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-12 DOI: 10.1038/s41928-025-01421-2

Linsey K. Rodenbach, Jason M. Underwood, Ngoc Thanh Mai Tran, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon

{"title":"A unified realization of electrical quantities from the quantum International System of Units","authors":"Linsey K. Rodenbach, Jason M. Underwood, Ngoc Thanh Mai Tran, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon","doi":"10.1038/s41928-025-01421-2","DOIUrl":"10.1038/s41928-025-01421-2","url":null,"abstract":"In the revised International System of Units (SI), the ohm and the volt are realized from the von Klitzing constant and the Josephson constant, and a practical realization of the ampere is possible by applying Ohm’s law directly to the quantum Hall and Josephson effects. As a result, it is possible to create an instrument capable of realizing all three primary electrical units, but the development of such a system remains challenging. Here we report a unified realization of the volt, ohm and ampere by integrating a quantum anomalous Hall resistor (QAHR) and a programmable Josephson voltage standard (PJVS) in a single cryostat. Our system has a quantum voltage output that ranges from 0.24 mV to 6.5 mV with combined relative uncertainties down to 3 μV V−1. The QAHR provides a realization of the ohm at zero magnetic field with uncertainties near 1 μΩ Ω−1. We use the QAHR to convert a longitudinal current to a quantized Hall voltage and then directly compare that against the PJVS to realize the ampere. We determine currents in the range of 9.33–252 nA, and our lowest uncertainty is 4.3 μA A−1 at 83.9 nA. For other current values, a systematic error that ranges from −10 μA A−1 to −30 μA A−1 is present due to the imperfect isolation of the PJVS microwave bias. A unified realization of the volt, ohm and ampere can be achieved by integrating a quantum anomalous Hall resistor and a programmable Josephson voltage standard in a single cryostat.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 8","pages":"663-671"},"PeriodicalIF":40.9,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144819353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic three-dimensional neural probes from deterministic rolling of soft electronics 软电子产品确定性轧制的单片三维神经探针

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-11 DOI: 10.1038/s41928-025-01431-0

Yi Qiang, Wen Gu, Dongyeol Jang, Yieljae Shin, Delin Shi, Kyung Jin Seo, Gen Li, Sandra Vinnikova, Shiqiang Wu, Aditya Iyer, Pietro Artoni, Jaehyeon Ryu, Tianyu Bai, Vaishnavi Dhawan, Maria Medalla, Douglas L. Rosene, Tara L. Moore, Abigail N. Koppes, Ryan Koppes, Jyun-you Liou, Chandramouli Chandrasekaran, Xinyan Tracy Cui, Shuodao Wang, Hui Fang

{"title":"Monolithic three-dimensional neural probes from deterministic rolling of soft electronics","authors":"Yi Qiang, Wen Gu, Dongyeol Jang, Yieljae Shin, Delin Shi, Kyung Jin Seo, Gen Li, Sandra Vinnikova, Shiqiang Wu, Aditya Iyer, Pietro Artoni, Jaehyeon Ryu, Tianyu Bai, Vaishnavi Dhawan, Maria Medalla, Douglas L. Rosene, Tara L. Moore, Abigail N. Koppes, Ryan Koppes, Jyun-you Liou, Chandramouli Chandrasekaran, Xinyan Tracy Cui, Shuodao Wang, Hui Fang","doi":"10.1038/s41928-025-01431-0","DOIUrl":"10.1038/s41928-025-01431-0","url":null,"abstract":"Cognition and behaviour rely on coordinated activity from neural circuits distributed across three dimensions. However, typical probes for recording neural activity in the brain are limited to two-dimensional interfacing due to the planar semiconductor fabrication process. Here we report a rolling-of-soft-electronics approach to create monolithic three-dimensional (3D) neural probes with high scalability and design flexibility. Compared with previous stacking or assembly methods, the approach directly transforms a planar device into a 3D probe by leveraging the softness of flexible electrodes. The electrode shanks are initially fabricated in a single plane and then connected to a flexible spacer. By varying the features of planar design, such as shank pitch and spacer layer thickness, the device can then be deterministically rolled into versatile 3D probe designs containing hundreds of electrodes. With the system, we demonstrate single-unit spike recording in vivo in rodent and non-human primate models. We also show that the probe can provide microscopy-like 3D spatiotemporal mapping of spike activities in the rodent visual cortex, with five-week-long recording stability and promising 3D decoding performance of visual orientation. Soft electronic probes for measuring neural activity can be made scalably in an initially planar form and turned into various three-dimensional geometries through a controlled rolling method.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 8","pages":"721-737"},"PeriodicalIF":40.9,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144812936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide 基于单层二硫化钼的具有内在可塑性的仿生人工神经元

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-11 DOI: 10.1038/s41928-025-01433-y

Yin Wang, Saifei Gou, Xiangqi Dong, Xinyu Chen, Xinyu Wang, Qicheng Sun, Yin Xia, Yuxuan Zhu, Zhejia Zhang, Die Wang, Jinshu Zhang, Xiaojiao Guo, Ling Tong, Jingyi Ma, Zihan Xu, Yufeng Xie, Shunli Ma, Peng Zhou, Yang Chai, Wenzhong Bao

{"title":"A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide","authors":"Yin Wang, Saifei Gou, Xiangqi Dong, Xinyu Chen, Xinyu Wang, Qicheng Sun, Yin Xia, Yuxuan Zhu, Zhejia Zhang, Die Wang, Jinshu Zhang, Xiaojiao Guo, Ling Tong, Jingyi Ma, Zihan Xu, Yufeng Xie, Shunli Ma, Peng Zhou, Yang Chai, Wenzhong Bao","doi":"10.1038/s41928-025-01433-y","DOIUrl":"10.1038/s41928-025-01433-y","url":null,"abstract":"Neuromorphic hardware that accurately simulates diverse neuronal behaviours could be of use in the development of edge intelligence. Hardware that incorporates synaptic plasticity—adaptive changes that strengthen or weaken synaptic connections—has been explored, but mimicking the full spectrum of learning and memory processes requires the interplay of multiple plasticity mechanisms including intrinsic plasticity. Here we show that an integrate-and-fire neuron can be created by combining a dynamic random-access memory and an inverter that are based on wafer-scale monolayer molybdenum disulfide films. In the system, the voltage in the dynamic random-access memory capacitor—that is, the neuronal membrane potential—can be modulated to emulate intrinsic plasticity. The module can also emulate the photopic and scotopic adaptation of the human visual system by dynamically adjusting its light sensitivity. We fabricate a 3 × 3 photoreceptor neuron array and demonstrate light coding and visual adaptation. We also use the neuron module to simulate a bioinspired neural network model for image recognition. An integrate-and-fire artificial neuron combining a dynamic random-access memory and an inverter based on wafer-scale monolayer molybdenum disulfide films can emulate intrinsic plasticity, the photopic and scotopic adaptation of the human visual system, and achieve temporal information encoding.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 8","pages":"680-688"},"PeriodicalIF":40.9,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144812938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrasound brain stimulation technologies for targeted therapeutics 靶向治疗的超声脑刺激技术

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-05 DOI: 10.1038/s41928-025-01420-3

Yehhyun Jo, Subeen Kim, Jinseong Jeong, Hyunjoo Jenny Lee

{"title":"Ultrasound brain stimulation technologies for targeted therapeutics","authors":"Yehhyun Jo, Subeen Kim, Jinseong Jeong, Hyunjoo Jenny Lee","doi":"10.1038/s41928-025-01420-3","DOIUrl":"10.1038/s41928-025-01420-3","url":null,"abstract":"Low-intensity focused ultrasound is an emerging technique that can precisely and non-invasively modulate neuronal activity and treat brain disorders. Recent developments in ultrasound brain stimulation technologies have led to improved integration with existing biological monitoring systems and, in turn, a range of exploratory studies, moving low-intensity focused ultrasound closer to clinical practice. Here, we examine the development of ultrasound stimulation technologies for targeted therapeutics. We explore micromachined and piezoelectric ultrasound transducers and their system-level integration with physiological readout techniques. We consider the spatial resolution, beam steering, imaging compatibility, skull compensation technologies and closed-loop algorithms of ultrasound stimulation platforms. We also provide a guide for developing an ultrasound stimulation system for specific therapeutic applications. Finally, we explore the technical challenges that remain to be addressed to develop ultrasound transducer technologies and platforms for widespread preclinical and clinical studies. This Review examines the development of ultrasound brain stimulation technologies, from the design of individual transducers to systems that combine ultrasound stimulation with biological monitoring for adaptive closed-loop modulation, as well as future developments needed for safe clinical adoption.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 8","pages":"647-662"},"PeriodicalIF":40.9,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144778474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diversifying global communications beyond submarine cables 使海底电缆以外的全球通信多样化

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-08-04 DOI: 10.1038/s41928-025-01424-z

Asaf Tzachor

引用次数: 0

An electro-optical Mott neuron based on niobium dioxide 基于二氧化铌的光电莫特神经元

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-07-28 DOI: 10.1038/s41928-025-01406-1

Mahnaz Islam, Stephanie M. Bohaichuk, Timothy D. Brown, Sangheon Oh, Christopher Perez, Chengyang Zhang, Tae Joon Park, Minseong Park, A. Alec Talin, Shriram Ramanathan, Suhas Kumar, Eric Pop

{"title":"An electro-optical Mott neuron based on niobium dioxide","authors":"Mahnaz Islam, Stephanie M. Bohaichuk, Timothy D. Brown, Sangheon Oh, Christopher Perez, Chengyang Zhang, Tae Joon Park, Minseong Park, A. Alec Talin, Shriram Ramanathan, Suhas Kumar, Eric Pop","doi":"10.1038/s41928-025-01406-1","DOIUrl":"10.1038/s41928-025-01406-1","url":null,"abstract":"Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO2), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO2. Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware. A single component built from sputtered niobium dioxide, a Mott insulator–metal transition material, can simultaneously exhibit both visible light emission and electrical threshold switching with neuron-like oscillations.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 8","pages":"672-679"},"PeriodicalIF":40.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144715379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A policy update 策略更新

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-07-25 DOI: 10.1038/s41928-025-01441-y

引用次数: 0

A qubit update 量子比特更新

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-07-25 DOI: 10.1038/s41928-025-01440-z

引用次数: 0