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Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode 利用范德华金属阴极实现模拟开关和高开/关比率的薄膜晶体管
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01269-y
Yesheng Li, Yao Xiong, Xiaolin Zhang, Lei Yin, Yiling Yu, Hao Wang, Lei Liao, Jun He
{"title":"Memristors with analogue switching and high on/off ratios using a van der Waals metallic cathode","authors":"Yesheng Li, Yao Xiong, Xiaolin Zhang, Lei Yin, Yiling Yu, Hao Wang, Lei Liao, Jun He","doi":"10.1038/s41928-024-01269-y","DOIUrl":"https://doi.org/10.1038/s41928-024-01269-y","url":null,"abstract":"<p>Neuromorphic computing based on memristors could help meet the growing demand for data-intensive computing applications such as artificial intelligence. Analogue memristors with multiple conductance states are of particular use in high-efficiency neuromorphic computing, but their weight mapping capabilities are typically limited by small on/off ratios. Here we show that memristors with analogue resistive switching and large on/off ratios can be created using two-dimensional van der Waals metallic materials (graphene or platinum ditelluride) as the cathodes. The memristors use silver as the top anode and indium phosphorus sulfide as the switching medium. Previous approaches have focused on modulating ion motion using changes to the resistive switching layer or anode, which can lower the on/off ratios. In contrast, our approach relies on the van der Waals cathode, which allows silver ion intercalation/de-intercalation, creating a high diffusion barrier to modulate ion motion. The strategy can achieve analogue resistive switching with an on/off ratio up to 10<sup>8</sup>, over 8-bit conductance states and attojoule-level power consumption. We use the analogue properties to perform the chip-level simulation of a convolutional neural network that offers high recognition accuracy.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"107 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computing with molecular memristors 利用分子忆阻器进行计算
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01285-y
Matthew Parker
{"title":"Computing with molecular memristors","authors":"Matthew Parker","doi":"10.1038/s41928-024-01285-y","DOIUrl":"10.1038/s41928-024-01285-y","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"849-849"},"PeriodicalIF":33.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical interconnect chips at low cost 低成本光互联芯片
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-21 DOI: 10.1038/s41928-024-01284-z
Katharina Zeissler
{"title":"Optical interconnect chips at low cost","authors":"Katharina Zeissler","doi":"10.1038/s41928-024-01284-z","DOIUrl":"10.1038/s41928-024-01284-z","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"848-848"},"PeriodicalIF":33.7,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142451823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A digitally embroidered metamaterial biosensor for kinetic environments 用于动力学环境的数字刺绣超材料生物传感器
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-17 DOI: 10.1038/s41928-024-01263-4
Qihang Zeng, Xi Tian, Dat T. Nguyen, Chenhui Li, Patrick Chia, Benjamin C. K. Tee, Changsheng Wu, John S. Ho
{"title":"A digitally embroidered metamaterial biosensor for kinetic environments","authors":"Qihang Zeng,&nbsp;Xi Tian,&nbsp;Dat T. Nguyen,&nbsp;Chenhui Li,&nbsp;Patrick Chia,&nbsp;Benjamin C. K. Tee,&nbsp;Changsheng Wu,&nbsp;John S. Ho","doi":"10.1038/s41928-024-01263-4","DOIUrl":"10.1038/s41928-024-01263-4","url":null,"abstract":"Biosensors could be used in vehicles to monitor driver alertness, detect impairment and gauge stress levels. However, measuring biomarkers, such as heart rate and respiration, without physical contact remains a challenge in these environments due to issues related to movement and external interference. Here we report a metamaterial biosensor that can capture cardiopulmonary signals in kinetic environments without being in contact with the body. Fabricated using digital embroidery, the biosensor can be integrated with a safety harness and can detect physiological motion through near-field interactions between wireless signals and the body. We show that the approach is capable of continuous, hour-long recording of heartbeat and respiration in an airline cabin simulator. We also show that the biosensor can operate in a moving car, and exhibits no degradation in accuracy compared with a stationary environment. A textile metamaterial sensor can wirelessly measure biomarkers—such as heart rate and respiration—in vehicles and shows no accuracy degradation when operating in moving environments.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"1025-1034"},"PeriodicalIF":33.7,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142440829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The commercialization of graphene electronics 石墨烯电子产品的商业化
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-16 DOI: 10.1038/s41928-024-01270-5
Kari Hjelt, Henning Döscher
{"title":"The commercialization of graphene electronics","authors":"Kari Hjelt,&nbsp;Henning Döscher","doi":"10.1038/s41928-024-01270-5","DOIUrl":"10.1038/s41928-024-01270-5","url":null,"abstract":"Technologies based on graphene and other two-dimensional materials are being commercialized in a number of areas, including electronics. But, as work on the Graphene Flagship illustrates, challenges in the scale-up and industrialization of graphene remain to be solved.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"844-846"},"PeriodicalIF":33.7,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142440262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fuzzy logic with two-dimensional interfacial junction transistors 使用二维界面结晶体管的模糊逻辑
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-15 DOI: 10.1038/s41928-024-01259-0
Langlang Xu, Xinyu Huang, Lei Ye
{"title":"Fuzzy logic with two-dimensional interfacial junction transistors","authors":"Langlang Xu,&nbsp;Xinyu Huang,&nbsp;Lei Ye","doi":"10.1038/s41928-024-01259-0","DOIUrl":"10.1038/s41928-024-01259-0","url":null,"abstract":"An interfacial junction transistor that is made from molybdenum disulfide and graphene, and offers tunable output characteristics, can be used to create reconfigurable fuzzy logic hardware for edge computing.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"850-851"},"PeriodicalIF":33.7,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware 用于可重构模糊逻辑硬件的范德华界面结晶体管
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-15 DOI: 10.1038/s41928-024-01256-3
Hefei Liu, Jiangbin Wu, Jiahui Ma, Xiaodong Yan, Ning Yang, Xu He, Yangu He, Hongming Zhang, Ting-Hao Hsu, Justin H. Qian, Jing Guo, Mark C. Hersam, Han Wang
{"title":"A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware","authors":"Hefei Liu,&nbsp;Jiangbin Wu,&nbsp;Jiahui Ma,&nbsp;Xiaodong Yan,&nbsp;Ning Yang,&nbsp;Xu He,&nbsp;Yangu He,&nbsp;Hongming Zhang,&nbsp;Ting-Hao Hsu,&nbsp;Justin H. Qian,&nbsp;Jing Guo,&nbsp;Mark C. Hersam,&nbsp;Han Wang","doi":"10.1038/s41928-024-01256-3","DOIUrl":"10.1038/s41928-024-01256-3","url":null,"abstract":"Edge devices face challenges when implementing deep neural networks due to constraints on their computational resources and power consumption. Fuzzy logic systems can potentially provide more efficient edge implementations due to their compactness and capacity to manage uncertain data. However, their hardware realization remains difficult, primarily because implementing reconfigurable membership function generators using conventional technologies requires high circuit complexity and power consumption. Here we report a multigate van der Waals interfacial junction transistor based on a molybdenum disulfide/graphene heterostructure that can generate tunable Gaussian-like and π-shaped membership functions. By integrating these generators with peripheral circuits, we create a reconfigurable fuzzy controller hardware capable of nonlinear system control. This fuzzy logic system can also be integrated with a few-layer convolution neural network to form a fuzzy neural network with enhanced performance in image segmentation. An interfacial junction transistor based on a molybdenum disulfide/graphene heterostructure can generate tunable π-shaped and Gaussian-like membership functions, allowing membership function generators for fuzzy logic systems to be implemented with low device count and energy cost.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"876-884"},"PeriodicalIF":33.7,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142436281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias 二维材料与高密度通孔的单质和异质三维集成
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-09 DOI: 10.1038/s41928-024-01251-8
Subir Ghosh, Yikai Zheng, Zhiyu Zhang, Yongwen Sun, Thomas F. Schranghamer, Najam U Sakib, Aaryan Oberoi, Chen Chen, Joan M. Redwing, Yang Yang, Saptarshi Das
{"title":"Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias","authors":"Subir Ghosh,&nbsp;Yikai Zheng,&nbsp;Zhiyu Zhang,&nbsp;Yongwen Sun,&nbsp;Thomas F. Schranghamer,&nbsp;Najam U Sakib,&nbsp;Aaryan Oberoi,&nbsp;Chen Chen,&nbsp;Joan M. Redwing,&nbsp;Yang Yang,&nbsp;Saptarshi Das","doi":"10.1038/s41928-024-01251-8","DOIUrl":"10.1038/s41928-024-01251-8","url":null,"abstract":"Monolithic three-dimensional (M3D) integration is being increasingly adopted by the semiconductor industry as an alternative to traditional through-silicon via technology as a way to increase the density of stacked, heterogenous electronic components. M3D integration can also provide transistor-level partitioning and material heterogeneity. However, there are few large-area demonstrations of M3D integration using non-silicon materials. Here, we report heterogeneous M3D integration of two-dimensional materials using a dense inter-via structure with an interconnect (I/O) density of 62,500 I/O per mm2. Our M3D stack consists of graphene-based chemisensors in tier 2 and molybdenum disulfide (MoS2) memtransistor-based programmable circuits in tier 1, with more than 500 devices in each tier. Our process allows the physical proximity between sensors and computing elements to be reduced to 50 nm, providing reduced latency in near-sensor computing applications. Our manufacturing process also stays below 200 °C and is thus compatible with back-end-of-line integration. Tiers containing graphene-based sensors and molybdenum disulfide-based processors can be vertically stacked using a monolithic integration process, with an interconnect density of 62,500 per mm2.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"892-903"},"PeriodicalIF":33.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142385118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic 3D integration with 2D materials 与 2D 材料的单片式 3D 集成
IF 33.7 1区 工程技术
Nature Electronics Pub Date : 2024-10-09 DOI: 10.1038/s41928-024-01260-7
Sangmoon Han, Ji-Yun Moon, Sang-Hoon Bae
{"title":"Monolithic 3D integration with 2D materials","authors":"Sangmoon Han,&nbsp;Ji-Yun Moon,&nbsp;Sang-Hoon Bae","doi":"10.1038/s41928-024-01260-7","DOIUrl":"10.1038/s41928-024-01260-7","url":null,"abstract":"The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"854-855"},"PeriodicalIF":33.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142385085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A wearable in-sensor computing platform based on stretchable organic electrochemical transistors 基于可拉伸有机电化学晶体管的可穿戴传感计算平台
IF 34.3 1区 工程技术
Nature Electronics Pub Date : 2024-10-02 DOI: 10.1038/s41928-024-01250-9
Dingyao Liu, Xinyu Tian, Jing Bai, Shaocong Wang, Shilei Dai, Yan Wang, Zhongrui Wang, Shiming Zhang
{"title":"A wearable in-sensor computing platform based on stretchable organic electrochemical transistors","authors":"Dingyao Liu, Xinyu Tian, Jing Bai, Shaocong Wang, Shilei Dai, Yan Wang, Zhongrui Wang, Shiming Zhang","doi":"10.1038/s41928-024-01250-9","DOIUrl":"https://doi.org/10.1038/s41928-024-01250-9","url":null,"abstract":"<p>Organic electrochemical transistors could be used in in-sensor computing and wearable healthcare applications. However, they lack the conformity and stretchability needed to minimize mechanical mismatch between the devices and human body, are challenging to fabricate at a scale with small feature sizes and high density, and require miniaturized readout systems for practical on-body applications. Here we report a wearable in-sensor computing platform based on stretchable organic electrochemical transistor arrays. The platform offers more than 50% stretchability by using an adhesive supramolecular buffer layer during fabrication that improves robustness at interfaces under strain. We fabricate stretchable transistor arrays with feature sizes down to 100 μm using a high-resolution six-channel inkjet printing system. We also develop a coin-sized data readout system for biosignal acquisition. We show that our coin-sized, smartwatch-compatible electronic module can provide wearable in-sensor edge computing.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"3 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142362850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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