Nature Electronics最新文献_第5页

Co-packaged optics for high-performance computing and artificial intelligence 用于高性能计算和人工智能的共封装光学器件

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-19 DOI: 10.1038/s41928-026-01681-6

Byungsoo Kim, Soo Ho Choi, Georgii Zograf, Young Jin Yoo, Yongmin Baek, Seokho Kim, Jongchan Kim, Jeehwan Kim, Sang Hoon Chae, Hyunseok Kim, Seunghoon Hong, Kyusang Lee

{"title":"Co-packaged optics for high-performance computing and artificial intelligence","authors":"Byungsoo Kim, Soo Ho Choi, Georgii Zograf, Young Jin Yoo, Yongmin Baek, Seokho Kim, Jongchan Kim, Jeehwan Kim, Sang Hoon Chae, Hyunseok Kim, Seunghoon Hong, Kyusang Lee","doi":"10.1038/s41928-026-01681-6","DOIUrl":"10.1038/s41928-026-01681-6","url":null,"abstract":"The large data movement required in high-performance computing and artificial intelligence workloads has exposed the fundamental limits of electrical interconnects, where resistive losses, capacitive loading and frequency-dependent distortion increasingly constrain bandwidth, latency and energy efficiency. Optical compute interconnects, which replace electrical links with co-packaged photonic channels, could provide low propagation loss, high bandwidth and superior signal integrity. Here, we examine the development of optical chip-to-chip interconnects and co-packaged optics for high-performance computing and artificial intelligence. We analyse the key domains, including electrical subsystems, electro–optical and opto–electronic conversion interfaces, and optical transmission networks, that determine system-level performance across bandwidth, energy and latency metrics. We also provide a technology roadmap from two-dimensional (2D) co-packaged optics, 2.5D interposer-based integration and 3D heterogeneous stacking, identifying critical challenges in thermal management, manufacturability and standardization that will need to be addressed to establish optical compute interconnects as a foundational communication technology for high-performance computing infrastructure. This Review examines optical chip-to-chip interconnects and co-packaged optics for high-performance computing applications, considering key functional domains, the performance of different integration strategies and the critical challenges to widespread adoption.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 8","pages":"853-867"},"PeriodicalIF":42.3,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148785307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A room-temperature cavity–magnonic source of correlated microwave magnon polariton pairs 相关微波磁振子极化子对的室温腔-磁振源

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-19 DOI: 10.1038/s41928-026-01689-y

Qiuyuan Wang, Aravind Karthigeyan, Chung-Tao Chou, Luqiao Liu

{"title":"A room-temperature cavity–magnonic source of correlated microwave magnon polariton pairs","authors":"Qiuyuan Wang, Aravind Karthigeyan, Chung-Tao Chou, Luqiao Liu","doi":"10.1038/s41928-026-01689-y","DOIUrl":"10.1038/s41928-026-01689-y","url":null,"abstract":"Correlated microwave photon sources are required for the development of quantum-limited sensing, signal amplification and communication. However, the devices typically have a millikelvin operating temperature, which limits their broader application. Here we report a hybrid magnon–photon platform that is based on a printed-circuit-board microstrip resonator coupled to an yttrium iron garnet film and emits strong correlated microwave signals at room temperature. Our approach achieves non-degenerate excitations by coupling magnon modes simultaneously with two cavity photon modes. Through the magnon–photon interactions in the corresponding linear and nonlinear regimes, one input microwave photon splits into a pair of magnon polaritons that have distinct frequencies and maintain strong intermode correlations. The nonlinear magnon polariton dynamics exhibit true randomness and robust multichannel correlations, and we use the system to demonstrate microwave communication with reliable signal transmission through two noisy channels. A hybrid magnon–photon platform based on a printed-circuit-board microstrip resonator coupled to an yttrium iron garnet film can split a microwave photon into a pair of magnon polaritons with distinct frequencies and strong intermode correlations.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"988-996"},"PeriodicalIF":42.3,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148769194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomically thin amorphous carbon with an ultralow dielectric constant 具有超低介电常数的原子薄的无定形碳

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-18 DOI: 10.1038/s41928-026-01685-2

Chee-Tat Toh, Artem K. Grebenko, Ugur Karadeniz, Usha Bhat, Ya He, Hongji Zhang, Lu Shi, Iurii Rogov, Daria Noskova, Andrei Starkov, Alena A. Alekseeva, Konstantin V. Iakoubovskii, Chuan Chu Tee, Denis V. Vyalikh, Anna Makarova, Alexander Fedorov, Lucas M. Sassi, Michel Bosman, Naoto Kamiuchi, Yuta Sato, Kazutomo Suenaga, Barbaros Ӧzyilmaz

{"title":"Atomically thin amorphous carbon with an ultralow dielectric constant","authors":"Chee-Tat Toh, Artem K. Grebenko, Ugur Karadeniz, Usha Bhat, Ya He, Hongji Zhang, Lu Shi, Iurii Rogov, Daria Noskova, Andrei Starkov, Alena A. Alekseeva, Konstantin V. Iakoubovskii, Chuan Chu Tee, Denis V. Vyalikh, Anna Makarova, Alexander Fedorov, Lucas M. Sassi, Michel Bosman, Naoto Kamiuchi, Yuta Sato, Kazutomo Suenaga, Barbaros Ӧzyilmaz","doi":"10.1038/s41928-026-01685-2","DOIUrl":"10.1038/s41928-026-01685-2","url":null,"abstract":"Two-dimensional (2D) materials could replace conventional electronic components. Key advances have already been made in applying 2D materials to integrated circuits, but a robust, atomically thin ultralow-k dielectric remains crucial for further circuit scaling. Minimizing parasitic capacitances, in particular, will be needed as conductor spacing shrinks below 10 nm. However, conventional amorphous or porous low-k dielectrics become unstable at nanometre thicknesses. Here we show that atomically thin amorphous carbon films can function as mechanically robust ultralow-k dielectrics with a dielectric constant of 1.35 and a dielectric strength of 28–31 MV cm−1. The films are also an effective barrier to metal-ion diffusion, with a time to failure of 1010 s at 0.8-nm thickness. Our approach relies on a low-temperature, direct and conformal growth process, which makes it promising for practical implementation in complementary metal–oxide–semiconductor technology. An amorphous carbon film with a dielectric constant of 1.35 can act as a robust ion-diffusion barrier, even at a thickness of 0.8 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"1018-1026"},"PeriodicalIF":42.3,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-026-01685-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148769157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A monolithic microwave integrated chip with hexagonal boron nitride switches 具有六方氮化硼开关的单片微波集成芯片

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-17 DOI: 10.1038/s41928-026-01696-z

Yan Huang

引用次数: 0

Self-assembled contacts for molecules 分子的自组装接触

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-14 DOI: 10.1038/s41928-026-01695-0

Matthew Parker

引用次数: 0

Human–robot teams depend on alignment 人机团队依赖于对齐

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-12 DOI: 10.1038/s41928-026-01683-4

Dana Kulić, Hashini Senaratne, David Howard, Leimin Tian

引用次数: 0

Navigating the pitfalls of two-dimensional ferroelectricity 探索二维铁电的陷阱

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-12 DOI: 10.1038/s41928-026-01680-7

Alexei Gruverman, Junling Wang

引用次数: 0

Author Correction: Small-voltage multiferroic control of two-dimensional magnetic insulators 作者更正：二维磁绝缘子的小电压多铁性控制

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-08-06 DOI: 10.1038/s41928-026-01692-3

Shanchuan Liang, Ti Xie, Nicholas A. Blumenschein, Tong Zhou, Thomas Ersevim, Zhihao Song, Jierui Liang, Michael A. Susner, Benjamin S. Conner, Shi-Jing Gong, Jian-Ping Wang, Min Ouyang, Igor Žutić, Adam L. Friedman, Xiang Zhang, Cheng Gong

引用次数: 0

High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering 采用外延界面工程的高跨导二硫化钼顶栅晶体管

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-07-31 DOI: 10.1038/s41928-026-01672-7

Yuan-Chun Su, Po-Sen Mao, Chih-Yao Shih, Shih-Ting Wang, Yun-Yang Shen, Zih-Siang Jian, Hsiang-Chi Hu, Wei-Chen Tseng, Hsin-Ya Sung, Chih-Yen Lin, Zi-Yun Fong, Yu-Tung Lin, Kun-An Chiu, Fong-Zhi Chen, Ming-Yang Li, Wen-Wei Wu, Chao-Ching Cheng, Chih-I. Wu, Tsung-En Lee, Iuliana P. Radu, Wen-Hao Chang

{"title":"High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering","authors":"Yuan-Chun Su, Po-Sen Mao, Chih-Yao Shih, Shih-Ting Wang, Yun-Yang Shen, Zih-Siang Jian, Hsiang-Chi Hu, Wei-Chen Tseng, Hsin-Ya Sung, Chih-Yen Lin, Zi-Yun Fong, Yu-Tung Lin, Kun-An Chiu, Fong-Zhi Chen, Ming-Yang Li, Wen-Wei Wu, Chao-Ching Cheng, Chih-I. Wu, Tsung-En Lee, Iuliana P. Radu, Wen-Hao Chang","doi":"10.1038/s41928-026-01672-7","DOIUrl":"10.1038/s41928-026-01672-7","url":null,"abstract":"High transconductance is a key performance metric in field-effect transistors, directly influencing voltage gain, switching speed and bandwidth. In two-dimensional field-effect transistors, achieving a high transconductance requires a low equivalent oxide thickness, scaled channel length and preserved carrier mobility—three factors that are difficult to optimize simultaneously. Reduced equivalent oxide thickness (less than 1 nm) can be achieved with high-κ-dielectric integration, but such scaling often introduces dielectric-related scattering that degrades mobility and limits transconductance. Here we show that an epitaxial interface engineering approach can be used to create monolayer molybdenum disulfide top-gate field-effect transistors with a high transconductance of 0.45 mS µm−1 at an equivalent oxide thickness of around 1 nm. We grow an epitaxial aluminium film directly on molybdenum disulfide in an ultrahigh vacuum, which is followed by in situ low-pressure oxidation to form an epitaxially derived aluminium oxide interfacial layer. This layer supports uniform integration of hafnium oxide and suppresses dielectric-induced scattering, leading to strong gate control without notable mobility degradation. Monolayer molybdenum disulfide top-gate field-effect transistors with a transconductance of 0.45 mS µm−1 at an equivalent oxide thickness of around 1 nm can be created with the help of an epitaxially derived aluminium oxide interfacial layer.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"9 9","pages":"1036-1045"},"PeriodicalIF":42.3,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148693585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Author Correction: Industrial reliability testing of transistor gate dielectrics 作者更正：晶体管栅极电介质的工业可靠性测试

IF 42.3 1区工程技术

Nature Electronics Pub Date : 2026-07-30 DOI: 10.1038/s41928-026-01690-5

Ernest Y. Wu, Tibor Grasser, Mario Lanza

引用次数: 0