Nature Electronics最新文献_第5页

Crosstalk-free high-definition organic microdisplays

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-27 DOI: 10.1038/s41928-024-01334-6

Ching-Fuh Lin, Chih-Yuan Tsai

引用次数: 0

Microlithography of hole transport layers for high-resolution organic light-emitting diodes with reduced electrical crosstalk

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-27 DOI: 10.1038/s41928-024-01327-5

Hyukmin Kweon, Seonkwon Kim, Borina Ha, Seunghan Lee, Soyeon Lee, SeungHwan Roh, Hayoung Oh, Jiyeon Ha, Minsu Kang, Moon Sung Kang, Jeong Ho Cho, Do Hwan Kim

{"title":"Microlithography of hole transport layers for high-resolution organic light-emitting diodes with reduced electrical crosstalk","authors":"Hyukmin Kweon, Seonkwon Kim, Borina Ha, Seunghan Lee, Soyeon Lee, SeungHwan Roh, Hayoung Oh, Jiyeon Ha, Minsu Kang, Moon Sung Kang, Jeong Ho Cho, Do Hwan Kim","doi":"10.1038/s41928-024-01327-5","DOIUrl":"10.1038/s41928-024-01327-5","url":null,"abstract":"High-density displays are required for the development of virtual and augmented reality devices. However, increasing the pixel resolution can lead to higher electrical pixel crosstalk, primarily due to a shared hole transport layer. Here we show that a silicone-integrated small-molecule hole transport layer can be patterned at the wafer scale with microlithography to mitigate electrical pixel crosstalk. This provides high-density pixelation and improved performance of the hole transport layer itself. With this approach, we create high-fidelity micro-pattern arrays with a resolution of up to 10,062 pixels per inch on a six-inch wafer. The silicone-integrated small-molecule hole transport layer can effectively modulate charge balance within the emission layers, improving the luminance characteristics of organic light-emitting diodes. We also show that organic light-emitting diodes integrated with micro-patterned silicone-integrated small-molecule hole transport layers have a reduced electrical pixel crosstalk compared with organic light-emitting diodes with a typical hole transport layer. The robustness of small-molecule organic films can be increased by incorporating silicone blocks, allowing them to be patterned at high resolution, and used to make pixelated hole transport layers that reduce crosstalk in high-pixel-density displays.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 1","pages":"66-74"},"PeriodicalIF":33.7,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143044082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A dual-domain compute-in-memory system for general neural network inference

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-24 DOI: 10.1038/s41928-024-01315-9

Ze Wang, Ruihua Yu, Zhiping Jia, Zhifan He, Tianhao Yang, Bin Gao, Yang Li, Zhenping Hu, Zhenqi Hao, Yunrui Liu, Jianghai Lu, Peng Yao, Jianshi Tang, Qi Liu, He Qian, Huaqiang Wu

{"title":"A dual-domain compute-in-memory system for general neural network inference","authors":"Ze Wang, Ruihua Yu, Zhiping Jia, Zhifan He, Tianhao Yang, Bin Gao, Yang Li, Zhenping Hu, Zhenqi Hao, Yunrui Liu, Jianghai Lu, Peng Yao, Jianshi Tang, Qi Liu, He Qian, Huaqiang Wu","doi":"10.1038/s41928-024-01315-9","DOIUrl":"10.1038/s41928-024-01315-9","url":null,"abstract":"Analogue compute-in-memory systems can offer superior energy efficiency and parallelism than conventional digital systems. However, complex regression tasks that require precise floating-point (FP) computing remain challenging with such hardware, and previous approaches have, thus, typically focused on classification tasks requiring low data precision and a limited dynamic range. Here we describe an analogue–digital unified compute-in-memory architecture for general neural network inference. The approach is based on a low-cost dual-domain FP processor and merges analogue compute-in-memory arrays with digital cores. It exhibits a 39.2 times higher energy efficiency than common FP-32 multipliers during FP neural network inference. We use this architecture to develop a memristor-based computing system and illustrate its capabilities with a fully hardware-implemented complex regression task using YOLO. The system exhibits a 2.7 times higher mean average precision (increasing from 0.27 to 0.724, mAP-50) compared with pure analogue compute-in-memory systems. An analogue–digital unified compute-in-memory architecture can offer native support for floating-point-based complex regression tasks, providing improved accuracy and energy efficiency compared with pure analogue compute-in-memory systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"276-287"},"PeriodicalIF":33.7,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A flexible active-matrix X-ray detector with a backplane based on two-dimensional materials 一种基于二维材料背板的柔性有源矩阵x射线探测器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-22 DOI: 10.1038/s41928-024-01317-7

Beom Jin Kim, Bangjie Shao, Anh Tuan Hoang, Seokmin Yun, Juyeong Hong, Jialiang Wang, Ajit Kumar Katiyar, Seunghyeon Ji, Duo Xu, Yang Chai, Jong-Hyun Ahn

{"title":"A flexible active-matrix X-ray detector with a backplane based on two-dimensional materials","authors":"Beom Jin Kim, Bangjie Shao, Anh Tuan Hoang, Seokmin Yun, Juyeong Hong, Jialiang Wang, Ajit Kumar Katiyar, Seunghyeon Ji, Duo Xu, Yang Chai, Jong-Hyun Ahn","doi":"10.1038/s41928-024-01317-7","DOIUrl":"10.1038/s41928-024-01317-7","url":null,"abstract":"Conventional flat-panel X-ray detectors suffer from image distortion and non-uniformity when imaging non-planar geometries. Flexible X-ray detectors can conformally fit on a non-planar target surface and thus reduce image distortion. However, it is challenging to create thin-film transistors and photodetector backplanes that offer the necessary mechanical flexibility while maintaining good carrier mobility and photoresponsivity. Here we report a flexible active-matrix X-ray detector that has a backplane based on two-dimensional molybdenum disulfide (MoS2) transistors and graphene/MoS2 photodetectors. The backplane covers a large area of 3 cm × 3 cm with a total of 3,600 pixels, and exhibits a high electron mobility of 17.31 cm2 V−1 s−1 and a photoresponsivity of 9.37 A W−1 near the scintillator emission wavelength (544 nm). We use generative adversarial network-based post-processing to suppress inherent device noise, and show that the approach can provide high-quality images under lower X-ray exposure than typically needed for medical diagnosis and industrial inspection. A flexible X-ray detector that has a backplane based on two-dimensional molybdenum sulfide (MoS2) transistors and graphene/MoS2 photodetectors can produce images with high uniformity and minimal distortion by conforming to the curvature of non-planar targets.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 2","pages":"147-156"},"PeriodicalIF":33.7,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin injection in graphene using ferromagnetic van der Waals contacts of indium and cobalt 利用铟和钴的铁磁范德华接触在石墨烯中的自旋注入

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-20 DOI: 10.1038/s41928-024-01330-w

Soumya Sarkar, Saeyoung Oh, Peter J. Newton, Yang Li, Yiru Zhu, Maheera Abdul Ghani, Han Yan, Hu Young Jeong, Yan Wang, Manish Chhowalla

{"title":"Spin injection in graphene using ferromagnetic van der Waals contacts of indium and cobalt","authors":"Soumya Sarkar, Saeyoung Oh, Peter J. Newton, Yang Li, Yiru Zhu, Maheera Abdul Ghani, Han Yan, Hu Young Jeong, Yan Wang, Manish Chhowalla","doi":"10.1038/s41928-024-01330-w","DOIUrl":"10.1038/s41928-024-01330-w","url":null,"abstract":"Graphene-based spintronic devices require efficient spin injection, and dielectric tunnel barriers are typically used to facilitate spin injection. However, the direct growth of ultrathin dielectrics on two-dimensional surfaces is challenging and unreliable. Here we report spin injection in graphene lateral spin valves using ferromagnetic van der Waals contacts of indium and cobalt (In–Co), and without the deposition of dielectric tunnel barriers. With this approach, we obtain magnetoresistance values of 1.5% ± 0.5% (spin signal around 50 Ω), which is comparable to state-of-the-art graphene lateral spin valves with oxide tunnel barriers, with a working device yield of more than 70%. By contrast, lateral spin valves with non-van der Waals contacts containing only cobalt are inefficient and exhibit, at best, a magnetoresistance of around 0.2% (spin signal around 3 Ω). The contact resistance of our ferromagnetic indium–cobalt van der Waals contacts is 2–5 kΩ, which makes them compatible with complementary metal–oxide–semiconductor devices. Ferromagnetic van der Waals contacts of indium and cobalt can provide robust and reproducible spin injection in graphene lateral spin valves without the need for an additional dielectric tunnel barrier.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"215-221"},"PeriodicalIF":33.7,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-024-01330-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142990027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient 3D imaging with reconfigurable sensors 具有可重构传感器的高效3D成像

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-10 DOI: 10.1038/s41928-024-01258-1

Xiaohua Feng

引用次数: 0

A reconfigurable heterostructure transistor array for monocular 3D parallax reconstruction 用于单眼三维视差重建的可重构异质结构晶体管阵列

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-10 DOI: 10.1038/s41928-024-01261-6

Zhexin Li, Hao Xu, Yiqiang Zheng, Lingchen Liu, Linlin Li, Zheng Lou, Lili Wang

{"title":"A reconfigurable heterostructure transistor array for monocular 3D parallax reconstruction","authors":"Zhexin Li, Hao Xu, Yiqiang Zheng, Lingchen Liu, Linlin Li, Zheng Lou, Lili Wang","doi":"10.1038/s41928-024-01261-6","DOIUrl":"10.1038/s41928-024-01261-6","url":null,"abstract":"Sensors that are capable of three-dimensional detection of depth field information in the spatial domain are of potential use in applications such as robotics, satellite imaging and medical assistance. However, current techniques require a precise light source for complex phase detection and diffraction, or involve static multidirectional reflection imaging. Here we report a reconfigurable heterostructure transistor array for monocular three-dimensional parallax reconstruction. The phototransistors are based on heterostructures of indium gallium zinc oxide and tungsten diselenide, and can operate as n-type, p-type or ambipolar transistors depending on electrostatic modulation. The arrays can be switched between two modes: a real-time constant perception mode for static imaging and a spatiotemporal planar configuration mode with memory for dynamic imaging. To switch between the modes, the dominant carrier polarity is changed via a complementary metal–oxide–semiconductor-compatible multiterminal addressing architecture. We show that the system can be used for three-dimensional morphology reconstruction, two-dimensional depth field mapping and multi-view coupling. Heterostructures of indium gallium zinc oxide and tungsten diselenide can be used to create phototransistor arrays capable of three-dimensional morphology reconstruction, two-dimensional depth field mapping and multi-view coupling.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 1","pages":"46-55"},"PeriodicalIF":33.7,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved organic electrochemical transistor stability using solvent degassing and chemical doping 采用溶剂脱气和化学掺杂提高了有机电化学晶体管的稳定性

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-10 DOI: 10.1038/s41928-024-01297-8

Vianna N. Le, Kyle N. Baustert, Megan R. Brown, Joel H. Bombile, Lucas Q. Flagg, Karl Thorley, Christina J. Kousseff, Olga Solomeshch, Iain McCulloch, Nir Tessler, Chad Risko, Kenneth R. Graham, Alexandra F. Paterson

{"title":"Improved organic electrochemical transistor stability using solvent degassing and chemical doping","authors":"Vianna N. Le, Kyle N. Baustert, Megan R. Brown, Joel H. Bombile, Lucas Q. Flagg, Karl Thorley, Christina J. Kousseff, Olga Solomeshch, Iain McCulloch, Nir Tessler, Chad Risko, Kenneth R. Graham, Alexandra F. Paterson","doi":"10.1038/s41928-024-01297-8","DOIUrl":"10.1038/s41928-024-01297-8","url":null,"abstract":"Organic mixed ionic–electronic conductors (OMIECs), which can be used to build organic electrochemical transistors (OECTs), are of potential use in flexible, large-area and bioelectronic systems. Although hole-transporting p-type OMIECs are susceptible to oxidation, and oxygen leads to OECT instability, it is unclear whether oxygen also behaves as an uncontrolled p-dopant. We show that oxygen dissolved in a solvent can act as a p-dopant in OMIECs and OECTs by filling traps to enable effective electrochemical doping. To address the fact that the presence of oxygen simultaneously jeopardizes OECT stability, we develop a two-step strategy in which we first degas the solvent, and then dope the OMIEC in a controlled manner using a chemical dopant. Our approach improves the stability of both p-type and n-type OECTs, while increasing the on–off ratio, tuning the threshold voltage and enhancing the transconductance, charge carrier mobility, and the µC* product—that is, the product of mobility and the volumetric capacitance. The stability and performance of organic electrochemical transistors can be improved using a two-step technique in which oxygen is first removed from the solvent and then a chemical dopant is introduced into the organic mixed ionic–electronic conductor.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 2","pages":"116-126"},"PeriodicalIF":33.7,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142961412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-supervised video processing with self-calibration on an analogue computing platform based on a selector-less memristor array 基于无选择器忆阻器阵列的自监督视频自校准模拟计算平台

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-08 DOI: 10.1038/s41928-024-01318-6

Hakcheon Jeong, Seungjae Han, See-On Park, Tae Ryong Kim, Jongmin Bae, Taehwan Jang, Yoonho Cho, Seokho Seo, Hyun-Jun Jeong, Seungwoo Park, Taehoon Park, Juyoung Oh, Jeongwoo Park, Kwangwon Koh, Kang-Ho Kim, Dongsuk Jeon, Inyong Kwon, Young-Gyu Yoon, Shinhyun Choi

{"title":"Self-supervised video processing with self-calibration on an analogue computing platform based on a selector-less memristor array","authors":"Hakcheon Jeong, Seungjae Han, See-On Park, Tae Ryong Kim, Jongmin Bae, Taehwan Jang, Yoonho Cho, Seokho Seo, Hyun-Jun Jeong, Seungwoo Park, Taehoon Park, Juyoung Oh, Jeongwoo Park, Kwangwon Koh, Kang-Ho Kim, Dongsuk Jeon, Inyong Kwon, Young-Gyu Yoon, Shinhyun Choi","doi":"10.1038/s41928-024-01318-6","DOIUrl":"10.1038/s41928-024-01318-6","url":null,"abstract":"Memristor-based platforms could be used to create compact and energy-efficient artificial intelligence (AI) edge-computing systems due to their parallel computation ability in the analogue domain. However, systems based on memristor arrays face challenges implementing real-time AI algorithms with fully on-device learning due to reliability issues, such as low yield, poor uniformity and endurance problems. Here we report an analogue computing platform based on a selector-less analogue memristor array. We use interfacial-type titanium oxide memristors with a gradual oxygen distribution that exhibit high reliability, high linearity, forming-free attribute and self-rectification. Our platform—which consists of a selector-less (one-memristor) 1 K (32 × 32) crossbar array, peripheral circuitry and digital controller—can run AI algorithms in the analogue domain by self-calibration without compensation operations or pretraining. We illustrate the capabilities of the system with real-time video foreground and background separation, achieving an average peak signal-to-noise ratio of 30.49 dB and a structural similarity index measure of 0.81; these values are similar to those of simulations for the ideal case. A 32 × 32 analogue memristor crossbar array-based platform can form the basis of an edge-computing system that separates video foreground and background in real time without pretraining or compensation algorithms.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 2","pages":"168-178"},"PeriodicalIF":33.7,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142936305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors 利用二维半导体铁电场效应晶体管的无索引稀疏神经网络

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-01-08 DOI: 10.1038/s41928-024-01328-4

Hongkai Ning, Hengdi Wen, Yuan Meng, Zhihao Yu, Yuxiang Fu, Xilu Zou, Yilin Shen, Xiai Luo, Qiyue Zhao, Tao Zhang, Lei Liu, Shitong Zhu, Taotao Li, Weisheng Li, Li Li, Li Gao, Yi Shi, Xinran Wang

{"title":"An index-free sparse neural network using two-dimensional semiconductor ferroelectric field-effect transistors","authors":"Hongkai Ning, Hengdi Wen, Yuan Meng, Zhihao Yu, Yuxiang Fu, Xilu Zou, Yilin Shen, Xiai Luo, Qiyue Zhao, Tao Zhang, Lei Liu, Shitong Zhu, Taotao Li, Weisheng Li, Li Li, Li Gao, Yi Shi, Xinran Wang","doi":"10.1038/s41928-024-01328-4","DOIUrl":"10.1038/s41928-024-01328-4","url":null,"abstract":"The fine-grained dynamic sparsity in biological synapses is an important element in the energy efficiency of the human brain. Emulating such sparsity in an artificial system requires off-chip memory indexing, which has a considerable energy and latency overhead. Here, we report an in-memory sparsity architecture in which index memory is moved next to individual synapses, creating a sparse neural network without external memory indexing. We use a compact building block consisting of two non-volatile ferroelectric field-effect transistors acting as a digital sparsity and an analogue weight. The network is formulated as the Hadamard product of the sparsity and weight matrices, and the hardware, which is comprised of 900 ferroelectric field-effect transistors, is based on wafer-scale chemical-vapour-deposited molybdenum disulfide integrated through back-end-of-line processes. With the system, we demonstrate key synaptic processes—including pruning, weight update and regrowth—in an unstructured and fine-grained manner. We also develop a vectorial approximate update algorithm and optimize training scheduling. Through this software–hardware co-optimization, we achieve 98.4% accuracy in an EMNIST letter recognition task under 75% sparsity. Simulations on large neural networks show a tenfold reduction in latency and a ninefold reduction in energy consumption when compared with a dense network of the same performance. Ferroelectric field-effect transistors based on molybdenum disulfide can be used to build an in-memory sparsity architecture in which index memory is moved next to individual synapses, creating a sparse neural network without external memory indexing.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"222-234"},"PeriodicalIF":33.7,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142936306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0