Nature Electronics最新文献_第5页

How we made the 1,000 V silicon carbide Schottky diode 我们如何制造 1,000 V 碳化硅肖特基二极管

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01252-7

Tsunenobu Kimoto

引用次数: 0

Electrical switching of the perpendicular Néel order in a collinear antiferromagnet 对偶反铁磁体中垂直奈尔阶的电开关

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-30 DOI: 10.1038/s41928-024-01248-3

Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han

{"title":"Electrical switching of the perpendicular Néel order in a collinear antiferromagnet","authors":"Wenqing He, Tianyi Zhang, Yongjian Zhou, Caihua Wan, Hao Wu, Baoshan Cui, Jihao Xia, Ran Zhang, Tengyu Guo, Peng Chen, Mingkun Zhao, Leina Jiang, Alexander Grutter, Purnima P. Balakrishnan, Andrew J. Caruana, Christy J. Kinane, Sean Langridge, Guoqiang Yu, Cheng Song, Xiufeng Han","doi":"10.1038/s41928-024-01248-3","DOIUrl":"10.1038/s41928-024-01248-3","url":null,"abstract":"Spintronics is based on the electrical manipulation of magnetic order through current-induced spin torques. In collinear antiferromagnets with perpendicular magnetic anisotropy, binary states can be directly encoded in their opposite Néel order. The negligible stray fields and terahertz spin dynamics of these systems mean that they could potentially be used to develop ultrafast memory devices with high integration density. Here we report electrical switching of the perpendicular Néel order in a collinear antiferromagnet. We show that the Néel order in a prototypical collinear antiferromagnetic insulator—chromium oxide (Cr2O3)—can be switched by the spin–orbit torque with a low current density (5.8 × 106 A cm−2) and read out by the anomalous Hall effect. We also show that the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer can be electrically switched, confirming the Néel order switching of the Cr2O3 layer. The perpendicular Néel order in a collinear antiferromagnetic insulator—chromium oxide—can be switched by 180° via the spin–orbit torque with a low current density of 5.8 × 106 A cm−2 and read out via the anomalous Hall effect.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 11","pages":"975-983"},"PeriodicalIF":33.7,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142329697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An update for brain–computer interfaces 脑机接口的最新进展

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-25 DOI: 10.1038/s41928-024-01257-2

引用次数: 0

Author Correction: A microspectrometer with dual-signal spectral reconstruction 作者更正：具有双信号光谱重建功能的显微光谱仪

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-09-24 DOI: 10.1038/s41928-024-01262-5

Xinchuan Du, Yang Wang, Yi Cui, Gaofeng Rao, Jianwen Huang, Xinrui Chen, Ting Zhou, Chunyang Wu, Zongyin Yang, Hanxiao Cui, Yicheng Zhao, Jie Xiong

引用次数: 0

A self-filtering liquid acoustic sensor for voice recognition 用于语音识别的自滤波液体声学传感器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-23 DOI: 10.1038/s41928-024-01196-y

Xun Zhao, Yihao Zhou, Aaron Li, Jing Xu, Shreesh Karjagi, Edward Hahm, Lara Rulloda, Justin Li, John Hollister, Pirouz Kavehpour, Jun Chen

{"title":"A self-filtering liquid acoustic sensor for voice recognition","authors":"Xun Zhao, Yihao Zhou, Aaron Li, Jing Xu, Shreesh Karjagi, Edward Hahm, Lara Rulloda, Justin Li, John Hollister, Pirouz Kavehpour, Jun Chen","doi":"10.1038/s41928-024-01196-y","DOIUrl":"10.1038/s41928-024-01196-y","url":null,"abstract":"Wearable acoustic sensors can be used for voice recognition. However, the capabilities of such devices, which are typically based on solid materials, are often restricted by ambient noise, motion artefacts and low conformability to the skin. Here we report a liquid acoustic sensor for voice recognition. The approach is based on a three-dimensional oriented and ramified magnetic network structure of neodymium–iron–boron magnetic nanoparticles suspended in a carrier fluid, which behaves like a permanent magnet. The sensor can discriminate small pressures (0.9 Pa), has a high signal-to-noise ratio (69.1 dB) and provides self-filtering capabilities that can remove low-frequency biomechanical motion artefact (less than 30 Hz). We use the liquid acoustic sensor—together with a machine learning algorithm—to create a wearable voice recognition system that offers a recognition accuracy of 99% in a noisy environment. An acoustic sensor that is based on a network of magnetic nanoparticles suspended in a carrier fluid can be used—together with a machine learning algorithm—to create a wearable voice recognition system with an accuracy of 99% in a noisy environment.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 10","pages":"924-932"},"PeriodicalIF":33.7,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid multimodal wearable sensors for comprehensive health monitoring 用于全面健康监测的混合多模态可穿戴传感器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-23 DOI: 10.1038/s41928-024-01247-4

Kuldeep Mahato, Tamoghna Saha, Shichao Ding, Samar S. Sandhu, An-Yi Chang, Joseph Wang

{"title":"Hybrid multimodal wearable sensors for comprehensive health monitoring","authors":"Kuldeep Mahato, Tamoghna Saha, Shichao Ding, Samar S. Sandhu, An-Yi Chang, Joseph Wang","doi":"10.1038/s41928-024-01247-4","DOIUrl":"10.1038/s41928-024-01247-4","url":null,"abstract":"Wearable bioelectronic sensors are often used for health monitoring but are typically limited to a few physical or chemical parameters, which hinders their ability to provide a complete health assessment. Recently, wearable sensor platforms have been developed that can simultaneously and continuously record multiple biophysical and biochemical signals. These devices take advantage of advances in electronic device fabrication and miniaturization, bioelectronic sensors, and flexible materials. However, compared with existing wearable systems, which mostly contain either biochemical or biophysical sensors, hybrid multimodal wearable patches present a number of distinct challenges for further advancement. Here, we examine the development of such hybrid multimodal wearable sensors and explore their potential applications in tracking the health and disease status of different users. We highlight the key biomarkers and vital signs (related to various pathophysiological conditions) that hybrid bioelectronic sensor systems must be designed around. We also explore how artificial intelligence could be integrated with these hybrid multimodal sensors to offer wearers the ability to assess their health status in real time. This Review examines the development and potential of wearable sensor systems that use multiple physical and chemical sensing modalities to assess human health.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"7 9","pages":"735-750"},"PeriodicalIF":33.7,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A sense of touch without skin 没有皮肤的触觉

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01255-4

Katharina Zeissler

引用次数: 0

Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics 铌酸镁作为二维电子学的高κ栅极电介质

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01245-6

Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu, Jing-Kai Qin

{"title":"Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics","authors":"Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu, Jing-Kai Qin","doi":"10.1038/s41928-024-01245-6","DOIUrl":"https://doi.org/10.1038/s41928-024-01245-6","url":null,"abstract":"Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically active traps and efficient gate controllability. However, existing two-dimensional insulators do not provide a good trade-off in terms of bandgap, breakdown strength, dielectric constant, leakage current and bias temperature stability. Here, we show that single crystals of magnesium niobate (MgNb2O6) can be obtained through a buffer-controlled epitaxial growth process on a mica substrate. The atomically thin MgNb2O6 crystals have a wide bandgap (around 5.0 eV), high dielectric constant (around 20), large breakdown voltage (around 16 MV cm−1) and good thermal reliability. The MgNb2O6 can form a van der Waals interface with monolayer molybdenum disulfide (MoS2) with an extremely low density of trap states. MoS2 field-effect transistors with MgNb2O6 gate dielectrics exhibit a hysteresis under 0.9 mV (MV cm−1)−1, a subthreshold swing of 62 mV dec−1, an on/off current ratio of up to 4 × 107 and high electrical reliability at 500 K. The excellent electrostatic controllability of MgNb2O6 allowed us to create graphene-contacted transistors and inverter circuits with a channel length of 50 nm.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"13 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142236553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional transistors heat up 二维晶体管发热

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01254-5

Stuart Thomas

引用次数: 0

Flexible strain gauges that can be picked and placed 可拾取和放置的柔性应变片

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2024-09-18 DOI: 10.1038/s41928-024-01253-6

Matthew Parker

引用次数: 0