Nature Electronics最新文献_第5页

A robust organic hydrogen sensor for distributed monitoring applications 一个强大的有机氢传感器分布式监测应用

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-06 DOI: 10.1038/s41928-025-01352-y

Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos

{"title":"A robust organic hydrogen sensor for distributed monitoring applications","authors":"Suman Mandal, Adam V. Marsh, Hendrik Faber, Tanmay Ghoshal, Dipak Kumar Goswami, Leonidas Tsetseris, Martin Heeney, Thomas D. Anthopoulos","doi":"10.1038/s41928-025-01352-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01352-y","url":null,"abstract":"<p>Hydrogen is an abundant and clean energy source that could help to decarbonize difficult-to-electrify economic sectors. However, its safe deployment relies on the availability of cost-effective hydrogen detection technologies. We describe a hydrogen sensor that uses an organic semiconductor as the active layer. It can operate over a wide temperature and humidity range. Ambient oxygen p-dopes the organic semiconductor, which improves hole transport, and the presence of hydrogen reverses this doping process, leading to a drop in current and enabling reliable and rapid hydrogen detection. The sensor exhibits a high responsivity (more than 10,000), fast response time (less than 1 s), low limit of detection (around 192 ppb) and low power consumption (less than 2 μW). It can operate continuously for more than 646 days in ambient air at room temperature. We show that the sensor outperforms a commercial hydrogen detector in realistic sensing scenarios, illustrating its suitability for application in distributed sensor networks for early warning of hydrogen leaks and preventing explosions or fires.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"53 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory 利用空穴阱诱导激发记忆加快量子点发光二极管的响应速度

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-03-03 DOI: 10.1038/s41928-025-01350-0

Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin

{"title":"Accelerated response speed of quantum-dot light-emitting diodes by hole-trap-induced excitation memory","authors":"Xiuyuan Lu, Yunzhou Deng, Siyu He, Xitong Zhu, Szymon J. Zelewski, Hao Wang, Aobo Ren, Xiangyu Zhou, Jiang Wu, Xiang Li, Jiejun Zeng, Xingliang Dai, Qibin Shen, Desui Chen, Richard V. Penty, Richard H. Friend, Yizheng Jin","doi":"10.1038/s41928-025-01350-0","DOIUrl":"https://doi.org/10.1038/s41928-025-01350-0","url":null,"abstract":"<p>Fast-response electroluminescent devices are crucial for optoelectronic applications that involve high-speed operations. Quantum-dot light-emitting diodes are solution-processed electroluminescent devices with high efficiencies and stabilities, and they are of potential use in such applications. However, their response speed is typically limited by slow charge injection and transport across the organic hole-transport layers. We show that the transient electroluminescent responses of quantum-dot light-emitting diodes are influenced by their excitation history in pulsed operations. As the pulse interval decreases, this results in an increased response speed and the emergence of another fast-response electroluminescent channel, indicating the presence of excitation-memory effects. We show that these dynamics are due to deep-level hole traps in the organic hole-transport layers with fast charge-trapping and slow charge-detrapping characteristics. We develop a low-capacitance micro-quantum-dot light-emitting diode that exploits the excitation-memory-induced fast-response channel. The device, which has a −3 dB bandwidth of up to 19 MHz, exhibits an electroluminescent modulation frequency of 100 MHz and data-transmission rates of up to 120 Mbps with sub-picojoule energy consumption.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"67 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143532348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new model for AI 人工智能的新模型

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01361-x

引用次数: 0

High-performance magnetostatic wave resonators based on deep anisotropic etching of gadolinium gallium garnet substrates 基于钆镓石榴石衬底深各向异性刻蚀的高性能静磁波谐振器

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-27 DOI: 10.1038/s41928-025-01345-x

Sudhanshu Tiwari, Anuj Ashok, Connor Devitt, Sunil A. Bhave, Renyuan Wang

{"title":"High-performance magnetostatic wave resonators based on deep anisotropic etching of gadolinium gallium garnet substrates","authors":"Sudhanshu Tiwari, Anuj Ashok, Connor Devitt, Sunil A. Bhave, Renyuan Wang","doi":"10.1038/s41928-025-01345-x","DOIUrl":"10.1038/s41928-025-01345-x","url":null,"abstract":"Magnetostatic wave resonators based on yttrium iron garnet (YIG) are a promising technology platform for future communication filters. Such devices have demonstrated better quality factors than acoustic resonators in the 7 GHz range and above. However, the coupling coefficients of these resonators have been limited to less than 3%, primarily due to the restricted design space that is a result of microfabrication challenges related to the patterning of gadolinium gallium garnet (GGG), the substrate material used for growing single-crystal YIG. Here we report magnetostatic wave resonators created through the anisotropic etching of GGG substrates. Our approach, which is based on the YIG-on-GGG platform, uses a transducer with a hairclip-like structure. It is created by developing a microfabrication methodology that involves thinning and deep etching (up to 100 μm) of the GGG substrate. The resulting magnetostatic wave resonators exhibit a coupling of more than 8% in the 6–20 GHz frequency range. A microfabrication methodology that involves thinning and deep etching of gadolinium gallium garnet substrates can be used to create magnetostatic wave resonators that exhibit a coupling of more than 8% in the 6–20 GHz frequency range.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"267-275"},"PeriodicalIF":33.7,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-025-01345-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143507140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microcomb-synchronized optoelectronics Microcomb-synchronized光电子学

IF 34.3 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01349-7

Xiangpeng Zhang, Xuguang Zhang, Yujun Chen, Warren Jin, Zixuan Zhou, Chenyu Liu, Chenghao Lao, Jiahui Huang, Jingwen Dong, Weichao Ma, Weiwei Hu, Xingjun Wang, John E. Bowers, Wangzhe Li, Lin Chang

引用次数: 0

Author Correction: On-chip transfer of ultrashort graphene plasmon wave packets using terahertz electronics 作者更正：使用太赫兹电子技术的超短石墨烯等离子体波包的片上传输

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01363-9

Katsumasa Yoshioka, Guillaume Bernard, Taro Wakamura, Masayuki Hashisaka, Ken-ichi Sasaki, Satoshi Sasaki, Kenji Watanabe, Takashi Taniguchi, Norio Kumada

引用次数: 0

Fast magnonic device development with inverse design 基于逆设计的快速磁振器件开发

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-25 DOI: 10.1038/s41928-025-01347-9

Mingzhong Wu

引用次数: 0

Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures 圆片尺度异质结构二维渗透网络薄膜的正交光图像化

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-24 DOI: 10.1038/s41928-025-01351-z

In Cheol Kwak, Jihyun Kim, Jung Woo Moon, Seonkwon Kim, Ji Yun Park, Okin Song, Vlastimil Mazánek, Zdeněk Sofer, Hyunwoo Jo, Se Young Park, Moon Sung Kang, Joohoon Kang, Jeong Ho Cho

{"title":"Orthogonal photopatterning of two-dimensional percolated network films for wafer-scale heterostructures","authors":"In Cheol Kwak, Jihyun Kim, Jung Woo Moon, Seonkwon Kim, Ji Yun Park, Okin Song, Vlastimil Mazánek, Zdeněk Sofer, Hyunwoo Jo, Se Young Park, Moon Sung Kang, Joohoon Kang, Jeong Ho Cho","doi":"10.1038/s41928-025-01351-z","DOIUrl":"10.1038/s41928-025-01351-z","url":null,"abstract":"Molecular intercalation-based electrochemical exfoliation of two-dimensional (2D) materials can be used to create van der Waals heterostructures. However, the scalable assembly of vertical heterostructures typically requires the use of various chemical solvents for photolithography and subsequent transfer, which can leave behind chemical residues and limit the patterning resolution. We show that patterned van der Waals heterostructures can be fabricated from electrochemically exfoliated 2D flakes using a photoreactive crosslinker. When a 2D van der Waals percolated network with the crosslinker is exposed to ultraviolet light, the network junctions form covalent bonds, thereby enabling improved charge transport and orthogonal patterning of vertically stacked van der Waals thin-film networks without affecting the underlying prepatterned layers. Our approach can be used to create wafer-scale arrays of photopatterned field-effect transistors based on different 2D materials. The field-effect transistors exhibit high spatial uniformity and can be used to create logic gates, namely NOT, NAND and NOR gates. A photoreactive crosslinker can be used to directly pattern thin films of exfoliated two-dimensional flakes, and the technique can be performed sequentially to create patterned van der Waals heterostructures at wafer scales.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"235-243"},"PeriodicalIF":33.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143477379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photodiodes promote electrochemical synthesis 光电二极管促进了电化学合成

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-21 DOI: 10.1038/s41928-025-01360-y

Yan Huang

引用次数: 0

Growing single crystals of molybdenum disulfide at scale 大规模生长二硫化钼单晶

IF 33.7 1区工程技术

Nature Electronics Pub Date : 2025-02-19 DOI: 10.1038/s41928-025-01358-6

Katharina Zeissler

引用次数: 0