Nature Electronics最新文献_第6页

Residue-free wafer-scale direct imprinting of two-dimensional materials 二维材料的无残留晶圆级直接压印

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-07-01 DOI: 10.1038/s41928-025-01408-z

Zhiwei Li, Xiao Liu, Jiayu Shi, Xiangbin Cai, Yan Zhang, Wenduo Chen, Yuhao Jin, Hao Jiang, So Yeon Kim, Chao Zhu, Ya Deng, Yanran Liu, X. Renshaw Wang, Taotao Li, Ju Li, Zheng Liu, Hongbing Cai, Weibo Gao

{"title":"Residue-free wafer-scale direct imprinting of two-dimensional materials","authors":"Zhiwei Li, Xiao Liu, Jiayu Shi, Xiangbin Cai, Yan Zhang, Wenduo Chen, Yuhao Jin, Hao Jiang, So Yeon Kim, Chao Zhu, Ya Deng, Yanran Liu, X. Renshaw Wang, Taotao Li, Ju Li, Zheng Liu, Hongbing Cai, Weibo Gao","doi":"10.1038/s41928-025-01408-z","DOIUrl":"10.1038/s41928-025-01408-z","url":null,"abstract":"Two-dimensional (2D) semiconductors have the potential to replace silicon in next-generation electronic devices. However, despite advances in proof-of-concept device demonstrations and wafer-scale crystal synthesis, the lack of a compatible residue-free patterning technology has hindered industrialization. Here we describe a metal-stamp imprinting method for patterning 2D films into high-quality wafer-scale arrays without introducing chemical or polymer residues. A metal stamp with a three-dimensional morphology is used to form a local contact at the stamp–2D interface. The process selectively exfoliates some of the 2D material while leaving 2D arrays on the growth substrate. Microscopy and spectroscopy characterizations confirmed the clean surface and undamaged crystal structure. A statistical analysis of 100 back-gated molybdenum disulfide (MoS2) transistors and 500 top-gated logic circuits found a 20-times-lower variation of the threshold voltage compared to a reactive-ion-etching-based patterning process. The device yield on a 2-inch wafer was 97.6%. A three-dimensional metal stamp can be used to selectively exfoliate two-dimensional materials, allowing the remaining material to be patterned into two-dimensional arrays without leaving chemical or polymer residues.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 7","pages":"571-577"},"PeriodicalIF":40.9,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144520503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-efficiency elementary network of interchangeable superconducting qubit devices 可互换超导量子比特器件的高效基本网络

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-27 DOI: 10.1038/s41928-025-01404-3

Michael Mollenhauer, Abdullah Irfan, Xi Cao, Supriya Mandal, Wolfgang Pfaff

{"title":"A high-efficiency elementary network of interchangeable superconducting qubit devices","authors":"Michael Mollenhauer, Abdullah Irfan, Xi Cao, Supriya Mandal, Wolfgang Pfaff","doi":"10.1038/s41928-025-01404-3","DOIUrl":"10.1038/s41928-025-01404-3","url":null,"abstract":"Modular architectures could be used to scale quantum devices to the point of fault tolerance and utility. Such modularity is of particular value with superconducting qubits, where monolithically manufactured devices are limited in both system size and quality. However, although prototypical quantum device networks have been fabricated, the development of quantum systems with both interchangeability and high-fidelity operations remains challenging. Here we report a modular architecture for scaling quantum processors with reconfigurable and expandable networks. We develop a high-efficiency interconnect based on a low-loss detachable cable connection between two superconducting qubit devices. We overcome residual loss through a fast pump scheme, enabling intermodule SWAP efficiencies at the 99% level in less than 100 ns. We use the scheme to generate high-fidelity entanglement and operate a distributed logical dual-rail qubit. With an error rate of around 1%, our interdevice operations are at the threshold for fault tolerance. An interconnect based on a low-loss detachable cable connection between two superconducting qubit devices can be used to create elementary quantum networks of interchangeable superconducting quantum devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 7","pages":"610-619"},"PeriodicalIF":40.9,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144500445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Continuous biochemical profiling of the gastrointestinal tract using an integrated smart capsule 使用集成智能胶囊对胃肠道进行连续生化分析

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-27 DOI: 10.1038/s41928-025-01407-0

Jihong Min, Hyunah Ahn, Heather Lukas, Xiaotian Ma, Rinni Bhansali, Sung-Hyuk Sunwoo, Canran Wang, Yadong Xu, Dickson R. Yao, Gwangmook Kim, Zhaoping Li, Tzung K. Hsiai, Azita Emami, Hee-Tae Jung, Wei Gao

{"title":"Continuous biochemical profiling of the gastrointestinal tract using an integrated smart capsule","authors":"Jihong Min, Hyunah Ahn, Heather Lukas, Xiaotian Ma, Rinni Bhansali, Sung-Hyuk Sunwoo, Canran Wang, Yadong Xu, Dickson R. Yao, Gwangmook Kim, Zhaoping Li, Tzung K. Hsiai, Azita Emami, Hee-Tae Jung, Wei Gao","doi":"10.1038/s41928-025-01407-0","DOIUrl":"10.1038/s41928-025-01407-0","url":null,"abstract":"The gastrointestinal tract contains a wealth of chemical information that can be used to decipher the health of the digestive and nervous systems. Traditional methods of analysis, such as faecal analysis and biopsies, are invasive, costly and incapable of providing real-time metabolic and hormone profiling across the gastrointestinal tract. Commercial ingestible capsule sensors have been developed, but only monitor basic markers, such as pH and pressure, neglecting detailed chemical analysis. Here we report an integrated smart capsule that can simultaneously detect a spectrum of biochemical markers, including electrolytes, metabolites and hormones. The capsule, which is termed PillTrek, is 7 mm in diameter and 25 mm in length, and houses a miniaturized wireless electrochemical workstation capable of executing a range of electrochemical measurement techniques (potentiometry, amperometry, voltammetry and impedimetry), allowing it to interface with a variety of electrochemical sensors and detect various parameters in the gut. Using an array of sensors (serotonin, glucose, pH, ionic strength and temperature), we illustrate the capabilities of the system in vitro and in vivo in animal studies involving rat and rabbit models, monitoring the dynamic profile of these crucial biomarkers and their responsiveness to different dietary intakes. An integrated smart capsule that encapsulates an array of electrochemical sensors can provide real-time, continuous and multiplexed monitoring of the gastrointestinal tract.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 9","pages":"844-855"},"PeriodicalIF":40.9,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144500414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IGZO DRAM in three dimensions 三维IGZO DRAM

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01413-2

Matthew Parker

引用次数: 0

Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric 作为高κ铁电介质的独立式氧化铪膜集成到二维晶体管中

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01398-y

Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, Hsien-Chi Tsai, Yuan-Ming Chang, Chang-Yang Kuo, Chun-Fu Chang, Jyun-Hong Chen, Ying-Hao Chu, Mahito Yamamoto, Chang-Hong Shen, Yu-Lun Chueh, Po-Wen Chiu, Yi-Chun Chen, Jan-Chi Yang, Yen-Fu Lin

{"title":"Integration of freestanding hafnium zirconium oxide membranes into two-dimensional transistors as a high-κ ferroelectric dielectric","authors":"Che-Yi Lin, Bo-Cia Chen, Yu-Chen Liu, Shang-Fu Kuo, Hsien-Chi Tsai, Yuan-Ming Chang, Chang-Yang Kuo, Chun-Fu Chang, Jyun-Hong Chen, Ying-Hao Chu, Mahito Yamamoto, Chang-Hong Shen, Yu-Lun Chueh, Po-Wen Chiu, Yi-Chun Chen, Jan-Chi Yang, Yen-Fu Lin","doi":"10.1038/s41928-025-01398-y","DOIUrl":"10.1038/s41928-025-01398-y","url":null,"abstract":"Two-dimensional semiconductors could be used as a channel material in miniaturized transistors with high gate control. However, the lack of insulators that are both compatible with two-dimensional materials and suitable for integration into a fully scalable process flow limits development. Here we show that freestanding hafnium zirconium oxide (Hf0.5Zr0.5O2; HZO) membranes can be integrated with two-dimensional semiconductors as a high-κ dielectric. The HZO membranes can be varied in thickness from 5 to 40 nm, and be transferred onto molybdenum disulfide (MoS2) to create the top-gate dielectric in field-effect transistors. A 20-nm-thick HZO membrane exhibits a dielectric constant of 20.6 ± 0.5 and a leakage current (at 1 MV cm−1) of under 2.6 × 10−6 A cm−2, below the requirements of the International Technology Roadmap for Semiconductors, as well as typical ferroelectric behaviour. The MoS2 transistors with HZO dielectric exhibit an on/off ratio of 109 and a subthreshold swing below 60 mV dec−1 across four orders of current. We use the transistors to create an inverter, logic gates and a 1-bit full adder circuit. We also create a MoS2 transistor with a channel length of 13 nm, which exhibits an on/off ratio of over 108 and a subthreshold swing of 70 mV dec−1. Freestanding membranes of hafnium zirconium oxide can be created using pulsed laser deposition method and used as the top-gate dielectric in molybdenum disulfide transistors.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 7","pages":"560-570"},"PeriodicalIF":40.9,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.comhttps://www.nature.com/articles/s41928-025-01398-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144488389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A shape-morphing actuator that locks 一种可以锁定的变形驱动器

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01414-1

Katharina Zeissler

引用次数: 0

Sizing up wearables 评估可穿戴设备

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01417-y

引用次数: 0

Sensing systems for safe lithium-ion batteries 安全锂离子电池传感系统

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-26 DOI: 10.1038/s41928-025-01412-3

Yan Huang

引用次数: 0

A fast and reconfigurable sort-in-memory system based on memristors 一种基于忆阻器的快速可重构内存排序系统

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-25 DOI: 10.1038/s41928-025-01405-2

Lianfeng Yu, Teng Zhang, Zeyu Wang, Xile Wang, Zelun Pan, Bowen Wang, Zhaokun Jing, Jiaxin Liu, Yuqi Li, Ziang Xie, Yihang Zhu, Bonan Yan, Yaoyu Tao, Yuchao Yang

{"title":"A fast and reconfigurable sort-in-memory system based on memristors","authors":"Lianfeng Yu, Teng Zhang, Zeyu Wang, Xile Wang, Zelun Pan, Bowen Wang, Zhaokun Jing, Jiaxin Liu, Yuqi Li, Ziang Xie, Yihang Zhu, Bonan Yan, Yaoyu Tao, Yuchao Yang","doi":"10.1038/s41928-025-01405-2","DOIUrl":"10.1038/s41928-025-01405-2","url":null,"abstract":"Sorting is a fundamental task in modern computing systems. Hardware sorters are typically based on the von Neumann architecture, and their performance is limited by the data transfer bandwidth and CMOS memory. Sort-in-memory using memristors could help overcome these limitations, but current systems still rely on comparison operations so that sorting performance remains limited. Here we describe a fast and reconfigurable sort-in-memory system that uses digit reads of one-transistor–one-resistor memristor arrays. We develop digit-read tree node skipping, which supports various data quantities and data types. We extend this approach with the multi-bank, bit-slice and multi-level strategies for cross-array tree node skipping. We experimentally show that our comparison-free sort-in-memory system can improve throughput by ×7.70, energy efficiency by ×160.4 and area efficiency by ×32.46 compared with conventional sorting systems. To illustrate the potential of the approach to solve practical sorting tasks, as well as its compatibility with other compute-in-memory schemes, we apply it to Dijkstra’s shortest path search and neural network inference with in situ pruning. A sort-in-memory system that relies on digit reads on one-transistor–one-resistor memristor arrays can offer improved throughput, energy efficiency and area efficiency compared with conventional sorting systems.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 7","pages":"597-609"},"PeriodicalIF":40.9,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144479027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large-scale reconfigurable devices with defective dielectrics 具有缺陷电介质的大规模可重构器件

IF 40.9 1区工程技术

Nature Electronics Pub Date : 2025-06-13 DOI: 10.1038/s41928-025-01401-6

Wangmyung Choi, Hocheon Yoo

引用次数: 0