Nature Materials最新文献_第9页

Adding superconductivity to highly coherent electronic spins

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-025-02139-4

Ilan T. Rosen

引用次数: 0

A quantum dot in germanium proximitized by a superconductor

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-024-02095-5

Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Yao Su, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee

{"title":"A quantum dot in germanium proximitized by a superconductor","authors":"Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Yao Su, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee","doi":"10.1038/s41563-024-02095-5","DOIUrl":"10.1038/s41563-024-02095-5","url":null,"abstract":"As one of the few group IV materials with the potential to host superconductor–semiconductor hybrid devices, planar germanium hosting proximitized quantum dots is a compelling platform to achieve and combine topological superconductivity with existing and new qubit modalities. We demonstrate a quantum dot in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtSiGe) superconducting lead, forming a superconducting lead–quantum dot–superconducting lead junction. We show tunability of the coupling strength between the quantum dot and the superconducting lead, and gate control of the ratio of charging energy and the induced gap, and we tune the ground state of the system between even and odd parity. Furthermore, we characterize critical magnetic field strengths, finding a critical out-of-plane field of 0.90 ± 0.04 T. Finally, we explore sub-gap spin splitting, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu–Shiba–Rusinov limit. Our findings open up the physics of alternative spin and superconducting qubits, and the physics of Josephson junction arrays, in germanium. The authors achieve gate-controlled proximitization of a quantum dot in a planar germanium heterostructure, an isotopically purifiable group IV material. A patterned Pt germanosilicide superconductor is introduced via a thermally activated reaction.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"552-558"},"PeriodicalIF":37.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41563-024-02095-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

General approach for synthesizing hexagonal diamond by heating post-graphite phases

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-025-02126-9

Desi Chen, Guwen Chen, Long Lv, Jiajun Dong, Yuchen Shang, Xuyuan Hou, Yan Wang, Jianqi Shang, Saisai Wang, Yankun Yin, Ran Liu, Wei Zhang, Zhou Jiang, Yan He, Bingchen He, Chengwen Mao, Shengcai Zhu, Bertil Sundqvist, Bingbing Liu, Mingguang Yao

{"title":"General approach for synthesizing hexagonal diamond by heating post-graphite phases","authors":"Desi Chen, Guwen Chen, Long Lv, Jiajun Dong, Yuchen Shang, Xuyuan Hou, Yan Wang, Jianqi Shang, Saisai Wang, Yankun Yin, Ran Liu, Wei Zhang, Zhou Jiang, Yan He, Bingchen He, Chengwen Mao, Shengcai Zhu, Bertil Sundqvist, Bingbing Liu, Mingguang Yao","doi":"10.1038/s41563-025-02126-9","DOIUrl":"10.1038/s41563-025-02126-9","url":null,"abstract":"Natural and synthetic diamonds mostly have a cubic lattice, whereas a rare hexagonal structure—known as hexagonal diamond (HD)—has been largely unexplored due to the low purity and minuscule size of most samples obtained. The synthesis of HD remains a challenge and even its existence remains controversial. Here we report the synthesis of well-crystallized, nearly pure HD by heating highly compressed graphite, which is applicable to both bulk and nanosized graphitic precursors. Experiments and theoretical analyses show that the formation of a post-graphite phase within compressed graphite and temperature gradients promote HD growth. Using this approach, a millimetre-sized, highly oriented HD block comprising stacked single-crystal-like HD nanolayers is obtained. This HD exhibits high thermal stability up to 1,100 °C and a very high hardness of 155 GPa. Our findings offer valuable insights regarding the graphite-to-diamond conversion under elevated pressure and temperature, providing opportunities for the fabrication and applications of this unique material. Synthesis of millimetre-sized hexagonal diamond has been demonstrated, facilitated by the formation of intermediate post-graphite phases and temperature gradients.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"513-518"},"PeriodicalIF":37.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Iterative sublattice amorphization facilitates exceptional processability in inorganic semiconductors

IF 41.2 1区材料科学

Nature Materials Pub Date : 2025-02-07 DOI: 10.1038/s41563-024-02112-7

Yuechu Wang, Airan Li, Youran Hong, Tianqi Deng, Pan Deng, Yi Huang, Kai Liu, Jiangwei Wang, Chenguang Fu, Tiejun Zhu

{"title":"Iterative sublattice amorphization facilitates exceptional processability in inorganic semiconductors","authors":"Yuechu Wang, Airan Li, Youran Hong, Tianqi Deng, Pan Deng, Yi Huang, Kai Liu, Jiangwei Wang, Chenguang Fu, Tiejun Zhu","doi":"10.1038/s41563-024-02112-7","DOIUrl":"https://doi.org/10.1038/s41563-024-02112-7","url":null,"abstract":"Cold-forming processing is a crucial means for the cost-effective production of metal and alloy products. However, this process often results in catastrophic fracture when applied to most inorganic semiconductors owing to their inherent brittleness. Here we report the unique room-temperature plastic deformation mechanism involving sublattice amorphization coupled with Ag-ion diffusion in inorganic semiconductors Ag2Te1–xSx (0.3 ≤ x ≤ 0.6), and an ultrahigh extensibility of up to 10,150%. Once subject to external stress, the crystalline Te/S sublattice undergoes a uniform transformation into an amorphous state, whereas the Ag cations continuously bond with Te/S anions, endowing bulk Ag2Te1–xSx with exceptional plastic deformability. Remarkably, even slight polishing can induce sublattice amorphization in the surface layers. Furthermore, this sublattice amorphization can be reversed to crystals through simple annealing, enlightening the iterative sublattice amorphization strategy, with which metal-like wire drawing, curving, forging and ultrahigh ductility have been obtained in bulk Ag2Te1–xSx at room temperature. These results highlight sublattice amorphization as a critical plastic deformation mechanism in silver chalcogenide inorganic semiconductors, which will facilitate their applications in flexible electronics and drive further exploration of more plastic inorganic semiconductors.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"57 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143257973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe2 proximity

IF 41.2 1区材料科学

Nature Materials Pub Date : 2025-02-07 DOI: 10.1038/s41563-024-02109-2

Juan F. Sierra, Josef Světlík, Williams Savero Torres, Lorenzo Camosi, Franz Herling, Thomas Guillet, Kai Xu, Juan Sebastián Reparaz, Vera Marinova, Dimitre Dimitrov, Sergio O. Valenzuela

{"title":"Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe2 proximity","authors":"Juan F. Sierra, Josef Světlík, Williams Savero Torres, Lorenzo Camosi, Franz Herling, Thomas Guillet, Kai Xu, Juan Sebastián Reparaz, Vera Marinova, Dimitre Dimitrov, Sergio O. Valenzuela","doi":"10.1038/s41563-024-02109-2","DOIUrl":"https://doi.org/10.1038/s41563-024-02109-2","url":null,"abstract":"van der Waals heterostructures provide a versatile platform for tailoring electrical, magnetic, optical and spin transport properties via proximity effects. Hexagonal transition metal dichalcogenides induce valley Zeeman spin–orbit coupling in graphene, creating spin lifetime anisotropy between in-plane and out-of-plane spin orientations. However, in-plane spin lifetimes remain isotropic due to the inherent heterostructure’s three-fold symmetry. Here we demonstrate that pentagonal PdSe2, with its unique in-plane anisotropy, induces anisotropic gate-tunable spin–orbit coupling in graphene. This enables a tenfold modulation of spin lifetimes at room temperature, depending on the in-plane spin orientation. Moreover, the directional dependence of the spin lifetimes, along the three spatial directions, reveals a persistent in-plane spin texture component that governs the spin dynamics. These findings advance our understanding of spin physics in van der Waals heterostructures and pave the way for designing topological phases in graphene-based heterostructures in the strong spin–orbit coupling regime.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"26 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143257974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

YBa2Cu3O7 as a high-temperature superinductor

IF 41.2 1区材料科学

Nature Materials Pub Date : 2025-02-05 DOI: 10.1038/s41563-024-02107-4

Yogesh Kumar Srivastava, Teng Chen Ietro Pang, Manoj Gupta, Manukumara Manjappa, Piyush Agarwal, Jérôme Lesueur, Ranjan Singh

{"title":"YBa2Cu3O7 as a high-temperature superinductor","authors":"Yogesh Kumar Srivastava, Teng Chen Ietro Pang, Manoj Gupta, Manukumara Manjappa, Piyush Agarwal, Jérôme Lesueur, Ranjan Singh","doi":"10.1038/s41563-024-02107-4","DOIUrl":"https://doi.org/10.1038/s41563-024-02107-4","url":null,"abstract":"The magnetic behaviour of type-II superconductors is explained by a quantum vortex with a supercurrent encircling a coherence-length-sized core. In a superconducting film with a thickness of t < λL, the vortex field decays slowly as 1/r2, extending to the Pearl length ({P}_{{rm{L}}}=frac{2{lambda }_{{rm{L}}}^{2}}{t}), known as the Pearl vortex, rather than diverging as log[1/r] and decaying with London penetration depth λL, as that in the Abrikosov vortex. However, the effect of the Pearl vortex on a large enhancement in the kinetic inductance has not been fully explored. Here we discovered Pearl inductance, an additional form of kinetic inductance arising from geometrical structuring of high-superconducting-transition-temperature (Tc) YBCO superconductor thin films at the Pearl length scale. This results from an extension of vortex screening supercurrents from λL to 14λL in an ultrathin metamaterial resonator of thickness λL/7, enabling terahertz superinductance. Our device shows impedance exceeding the quantum resistance limit RQ = 6.47 kΩ by 33%, offering possibilities for cutting-edge electronic, photonic and quantum devices.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"8 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143124534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Increasing capacity with mixed conductors

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-03 DOI: 10.1038/s41563-024-02105-6

Juhyoun Park, Yoon Seok Jung

引用次数: 0

A market for metal–organic frameworks

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-03 DOI: 10.1038/s41563-025-02147-4

引用次数: 0

Electroreduction-driven distorted nanotwins activate pure Cu for efficient hydrogen evolution

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-03 DOI: 10.1038/s41563-024-02098-2

Zhe Li, Yueshuai Wang, Hui Liu, Yi Feng, Xiwen Du, Zhiheng Xie, Jihan Zhou, Yang Liu, Yun Song, Fei Wang, Manling Sui, Yue Lu, Fang Fang, Dalin Sun

{"title":"Electroreduction-driven distorted nanotwins activate pure Cu for efficient hydrogen evolution","authors":"Zhe Li, Yueshuai Wang, Hui Liu, Yi Feng, Xiwen Du, Zhiheng Xie, Jihan Zhou, Yang Liu, Yun Song, Fei Wang, Manling Sui, Yue Lu, Fang Fang, Dalin Sun","doi":"10.1038/s41563-024-02098-2","DOIUrl":"10.1038/s41563-024-02098-2","url":null,"abstract":"Precious metals such as Pt are favoured as catalysts for the hydrogen evolution reaction (HER) due to their excellent catalytic activity. However, the scarcity and high cost of precious metals have prompted researchers to explore cheaper alternatives such as Cu. Nevertheless, Cu shows poor catalytic performance due to weak binding with intermediates. Here the catalytic activity of pure Cu is activated via electroreduction-driven modification of the local structure, achieving a HER catalytic performance superior to commercial Pt/C catalysts for working current densities greater than 100 mA cm−2 in acid electrolyte. Activation involved two steps. First, polycrystalline Cu2O nanoparticles were prepared via pulsed laser ablation, resulting in grain boundaries within the Cu2O particles as observed using electron microscopy. Next, the Cu2O particles were electroreduced to pure Cu, inducing the formation of distorted nanotwins and edge dislocations. These local structures induce high lattice strain and decrease the Cu coordination number, enhancing the interaction between Cu and intermediates—as calculated using density functional theory—leading to the excellent catalytic activity and durability of the catalyst. Our observations show that low-cost pure Cu can be a promising HER catalyst for large-scale industrial applications. Low-cost Cu catalysts for the hydrogen evolution reaction (HER) can transform industrial water electrolysis, but pure Cu typically exhibits a negligible HER. Here, combining pulsed laser ablation and subsequent electroreduction, Cu nanotwins form that enable the HER at an overpotential of 301 mV, with 125 h of stable operation at a current density of 500 mA cm−2.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 3","pages":"424-432"},"PeriodicalIF":37.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Double-sided van der Waals epitaxy across an atomic layer

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-03 DOI: 10.1038/s41563-025-02131-y

Xiao Feng, Yayu Wang

引用次数: 0