Nature Materials最新文献_第10页

Lean design of a strong and ductile dual-phase titanium–oxygen alloy 高强度和延展性双相钛氧合金的精益设计

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-17 DOI: 10.1038/s41563-025-02118-9

Wangwang Ding, Qiying Tao, Chang Liu, Gang Chen, SangHyuk Yoo, Wei Cai, Peng Cao, Baorui Jia, Haoyang Wu, Deyin Zhang, Hongmin Zhu, Lin Zhang, Xuanhui Qu, Jin Zou, Mingli Qin

{"title":"Lean design of a strong and ductile dual-phase titanium–oxygen alloy","authors":"Wangwang Ding, Qiying Tao, Chang Liu, Gang Chen, SangHyuk Yoo, Wei Cai, Peng Cao, Baorui Jia, Haoyang Wu, Deyin Zhang, Hongmin Zhu, Lin Zhang, Xuanhui Qu, Jin Zou, Mingli Qin","doi":"10.1038/s41563-025-02118-9","DOIUrl":"10.1038/s41563-025-02118-9","url":null,"abstract":"Unalloyed titanium boasts an impressive combination of ductility, biocompatibility and corrosion resistance. However, its strength properties are moderate, which constrains its use in demanding structural applications. Traditional alloying methods used to strengthen titanium often compromise ductility and tend to be costly and energy intensive. Here we present a lean alloy design approach to create a strong and ductile dual-phase titanium–oxygen alloy. By embedding a coherent nanoscale allotropic face-centred cubic titanium phase into the hexagonal close-packed titanium matrix, we significantly enhance strength while preserving substantial ductility. This hexagonal-close-packed/face-centred-cubic dual-phase titanium–oxygen alloy is created by leveraging the tailored oxide-layer thickness of the powders and the rapid cooling inherent in laser-based powder bed fusion. The as-printed Ti–0.67 wt% O alloy exhibits an ultimate tensile strength of 1,119.3 ± 29.2 MPa and a ductility of 23.3 ± 1.9%. Our strategy of incorporating a coherent nanoscale allotropic phase offers a promising pathway to developing high-performance, cost-effective and sustainable lean alloys. A hexagonal-close-packed/face-centred-cubic dual-phase titanium–oxygen alloy is lean designed and fabricated by laser-based powder bed fusion using titanium powders with customized oxide-layer thickness. The as-printed alloy achieves an excellent combination of high strength and ductility.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"506-512"},"PeriodicalIF":37.2,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-14 DOI: 10.1038/s41563-025-02117-w

Junchuan Tang, Jianfeng Jiang, Xiaoyin Gao, Xin Gao, Chenxi Zhang, Mengdi Wang, Chengyuan Xue, Zhongrui Li, Yuling Yin, Congwei Tan, Feng Ding, Chenguang Qiu, Lian-Mao Peng, Hailin Peng

{"title":"Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration","authors":"Junchuan Tang, Jianfeng Jiang, Xiaoyin Gao, Xin Gao, Chenxi Zhang, Mengdi Wang, Chengyuan Xue, Zhongrui Li, Yuling Yin, Congwei Tan, Feng Ding, Chenguang Qiu, Lian-Mao Peng, Hailin Peng","doi":"10.1038/s41563-025-02117-w","DOIUrl":"10.1038/s41563-025-02117-w","url":null,"abstract":"Innovations in device architectures and materials promote transistor miniaturization for improved performance, energy efficiency and integration density. At foreseeable ångström nodes, a gate-all-around (GAA) field-effect transistor based on two-dimensional (2D) semiconductors would provide excellent electrostatic gate controllability to achieve ultimate power scaling and performance delivering. However, a major roadblock lies in the scalable integration of 2D GAA heterostructures with atomically smooth and conformal interfaces. Here we report a wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration achieved with low-temperature monolithic three-dimensional integration, in which high-mobility 2D semiconductor Bi2O2Se was epitaxially integrated by high-κ layered native-oxide dielectric Bi2SeO5 with an atomically smooth interface, enabling a high electron mobility of 280 cm2 V−1 s−1 and a near-ideal subthreshold swing of 62 mV dec−1. The scaled 2D GAA field-effect transistor with 30 nm gate length exhibits an ultralow operation voltage of 0.5 V, a high on-state current exceeding 1 mA μm−1, an ultralow intrinsic delay of 1.9 ps and an energy-delay product of 1.84 × 10−27 Js μm−1. This work demonstrates a wafer-scale 2D-material-based GAA system with valid performance and power merits, holding promising prospects for beyond-silicon monolithic three-dimensional circuits. A multi-layer wafer-scale 2D gate-all-around system with an atomically smooth interface fabricated via epitaxial monolithic 3D integration shows good performance and power efficiency, holding promise for the forthcoming ångström technology node.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"519-526"},"PeriodicalIF":37.2,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143418327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric polymers with mechanical bonds for high-temperature capacitive energy storage

IF 41.2 1区材料科学

Nature Materials Pub Date : 2025-02-14 DOI: 10.1038/s41563-025-02130-z

Rui Wang, Yujie Zhu, Shangshi Huang, Jing Fu, Yifan Zhou, Manxi Li, Li Meng, Xiyu Zhang, Jiajie Liang, Zhaoyu Ran, Mingcong Yang, Junluo Li, Xinhua Dong, Jun Hu, Jinliang He, Qi Li

{"title":"Dielectric polymers with mechanical bonds for high-temperature capacitive energy storage","authors":"Rui Wang, Yujie Zhu, Shangshi Huang, Jing Fu, Yifan Zhou, Manxi Li, Li Meng, Xiyu Zhang, Jiajie Liang, Zhaoyu Ran, Mingcong Yang, Junluo Li, Xinhua Dong, Jun Hu, Jinliang He, Qi Li","doi":"10.1038/s41563-025-02130-z","DOIUrl":"https://doi.org/10.1038/s41563-025-02130-z","url":null,"abstract":"High-temperature capacitive energy storage demands that dielectric materials maintain low electrical conduction loss and high discharged energy density under thermal extremes. The temperature capability of dielectric polymers is limited to below 200 °C, lagging behind requirements for high-power and harsh-condition electronics. Here we report a molecular topology design for dielectric polymers with mechanical bonds that overcomes this obstacle, where cyclic polyethers are threaded onto the axles of various polyimides. From density functional theory and molecular dynamics calculations, we found that the local vibrations of the encircled polymer chains were damped by the cyclic molecules through mechanical bonding, substantially inhibiting the phonon-assisted interchain charge transport that dominates conduction loss when approaching the thermal extremes. At 250 °C, we experimentally observed a d.c. electrical resistivity four orders of magnitude greater than that of commercial polyimides, with the discharged energy density reaching 4.1 J cm−3 with 90% charge–discharge efficiency, exceeding conventional dielectric polymers and polymer composites. These findings open up opportunities for substantially promoting the temperature capability of dielectric polymers given the rich diversity of existing molecular topologies modified with mechanical bonds.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"67 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Layers split and zip for phase transition

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-13 DOI: 10.1038/s41563-025-02148-3

Stephen D. Funni, Judy J. Cha

引用次数: 0

Anomalous thermal transport in Eshelby twisted van der Waals nanowires 埃谢尔比扭曲范德瓦尔斯纳米线中的反常热传输

IF 41.2 1区材料科学

Nature Materials Pub Date : 2025-02-12 DOI: 10.1038/s41563-024-02108-3

Yin Liu, Lei Jin, Tribhuwan Pandey, Haoye Sun, Yuzi Liu, Xun Li, Alejandro Rodriguez, Yueyin Wang, Tao Zhou, Rui Chen, Yongwen Sun, Yang Yang, Daryl C. Chrzan, Lucas Lindsay, Junqiao Wu, Jie Yao

{"title":"Anomalous thermal transport in Eshelby twisted van der Waals nanowires","authors":"Yin Liu, Lei Jin, Tribhuwan Pandey, Haoye Sun, Yuzi Liu, Xun Li, Alejandro Rodriguez, Yueyin Wang, Tao Zhou, Rui Chen, Yongwen Sun, Yang Yang, Daryl C. Chrzan, Lucas Lindsay, Junqiao Wu, Jie Yao","doi":"10.1038/s41563-024-02108-3","DOIUrl":"https://doi.org/10.1038/s41563-024-02108-3","url":null,"abstract":"Dislocations in van der Waals (vdW) layered nanomaterials induce strain and structural changes that substantially impact thermal transport. Understanding these effects could enable the manipulation of dislocations for improved thermoelectric and optoelectronic applications, but experimental insights remain limited. In this study, we use synthetic Eshelby twisted vdW GeS nanowires (NWs) with single screw dislocations as a model system to explore the interplay between dislocation-induced structural modifications and lattice thermal conductivity. Our measurements reveal a monoclinic structure stabilized by the dislocation, leading to a substantial drop in thermal conductivity for larger-diameter NWs (70% at room temperature), supported by first-principles calculations. Interestingly, we also find an anomalous enhancement of thermal conductivity with decreasing diameter in twisted NWs, contrary to typical trends in non-twisted GeS NWs. This is attributed to increased conductivity near the NW cores due to compressive strain around the central dislocations, and aligns with a density-functional-theory-informed core–shell model. Our results highlight the critical role of dislocations in thermal conduction, providing fundamental insights for defect and strain engineering in advanced thermal applications.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"58 1","pages":""},"PeriodicalIF":41.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143393196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Activating deformation twinning in cubic boron nitride

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-12 DOI: 10.1038/s41563-024-02111-8

Yeqiang Bu, Zhengping Su, Junquan Huang, Ke Tong, Penghui Li, Chong Wang, Tianye Jin, Song Zhao, Zhisheng Zhao, Alexander Soldatov, Yanbin Wang, Bo Xu, Zhongyuan Liu, Anmin Nie, Hongtao Wang, Wei Yang, Yongjun Tian

{"title":"Activating deformation twinning in cubic boron nitride","authors":"Yeqiang Bu, Zhengping Su, Junquan Huang, Ke Tong, Penghui Li, Chong Wang, Tianye Jin, Song Zhao, Zhisheng Zhao, Alexander Soldatov, Yanbin Wang, Bo Xu, Zhongyuan Liu, Anmin Nie, Hongtao Wang, Wei Yang, Yongjun Tian","doi":"10.1038/s41563-024-02111-8","DOIUrl":"10.1038/s41563-024-02111-8","url":null,"abstract":"Deformation twinning, a phenomenon primarily documented within metallic systems, has remained essentially unexplored in covalent materials due to the formidable challenges posed by their inherent extreme hardness and brittleness. Here, by employing a five-degree-of-freedom nano-manipulation stage inside a transmission electron microscope, we reveal a loading-specific twinning criterion for cubic boron nitride and successfully activate extensive deformation twinning with substantial improvements in mechanical properties in <100>-oriented cubic boron nitride submicrometre pillars at room temperature. Beyond cubic boron nitride, this criterion is also proven widely applicable across a spectrum of covalent materials. Investigations on the twinning dynamics at the atomic level in cubic boron nitride suggest a continuous-transition-mediated pathway. These findings substantially advance our comprehension of twinning mechanisms in covalent face-centred cubic materials, and herald a promising avenue for microstructural engineering aimed at enhancing the strength and toughness of these materials in their applications. Deformation twinning, a key deformation mechanism that is rarely explored in superhard materials, is shown to be activated in cubic boron nitride and other cubic covalent materials under a loading-specific twinning criterion.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 3","pages":"361-368"},"PeriodicalIF":37.2,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143393195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A cryogenic memristor

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-11 DOI: 10.1038/s41563-025-02125-w

Dennis Meier, Davi Rodrigues

引用次数: 0

Adding superconductivity to highly coherent electronic spins

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-025-02139-4

Ilan T. Rosen

引用次数: 0

A quantum dot in germanium proximitized by a superconductor

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-024-02095-5

Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Yao Su, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee

{"title":"A quantum dot in germanium proximitized by a superconductor","authors":"Lazar Lakic, William I. L. Lawrie, David van Driel, Lucas E. A. Stehouwer, Yao Su, Menno Veldhorst, Giordano Scappucci, Ferdinand Kuemmeth, Anasua Chatterjee","doi":"10.1038/s41563-024-02095-5","DOIUrl":"10.1038/s41563-024-02095-5","url":null,"abstract":"As one of the few group IV materials with the potential to host superconductor–semiconductor hybrid devices, planar germanium hosting proximitized quantum dots is a compelling platform to achieve and combine topological superconductivity with existing and new qubit modalities. We demonstrate a quantum dot in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtSiGe) superconducting lead, forming a superconducting lead–quantum dot–superconducting lead junction. We show tunability of the coupling strength between the quantum dot and the superconducting lead, and gate control of the ratio of charging energy and the induced gap, and we tune the ground state of the system between even and odd parity. Furthermore, we characterize critical magnetic field strengths, finding a critical out-of-plane field of 0.90 ± 0.04 T. Finally, we explore sub-gap spin splitting, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu–Shiba–Rusinov limit. Our findings open up the physics of alternative spin and superconducting qubits, and the physics of Josephson junction arrays, in germanium. The authors achieve gate-controlled proximitization of a quantum dot in a planar germanium heterostructure, an isotopically purifiable group IV material. A patterned Pt germanosilicide superconductor is introduced via a thermally activated reaction.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"552-558"},"PeriodicalIF":37.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41563-024-02095-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

General approach for synthesizing hexagonal diamond by heating post-graphite phases

IF 37.2 1区材料科学

Nature Materials Pub Date : 2025-02-10 DOI: 10.1038/s41563-025-02126-9

Desi Chen, Guwen Chen, Long Lv, Jiajun Dong, Yuchen Shang, Xuyuan Hou, Yan Wang, Jianqi Shang, Saisai Wang, Yankun Yin, Ran Liu, Wei Zhang, Zhou Jiang, Yan He, Bingchen He, Chengwen Mao, Shengcai Zhu, Bertil Sundqvist, Bingbing Liu, Mingguang Yao

{"title":"General approach for synthesizing hexagonal diamond by heating post-graphite phases","authors":"Desi Chen, Guwen Chen, Long Lv, Jiajun Dong, Yuchen Shang, Xuyuan Hou, Yan Wang, Jianqi Shang, Saisai Wang, Yankun Yin, Ran Liu, Wei Zhang, Zhou Jiang, Yan He, Bingchen He, Chengwen Mao, Shengcai Zhu, Bertil Sundqvist, Bingbing Liu, Mingguang Yao","doi":"10.1038/s41563-025-02126-9","DOIUrl":"10.1038/s41563-025-02126-9","url":null,"abstract":"Natural and synthetic diamonds mostly have a cubic lattice, whereas a rare hexagonal structure—known as hexagonal diamond (HD)—has been largely unexplored due to the low purity and minuscule size of most samples obtained. The synthesis of HD remains a challenge and even its existence remains controversial. Here we report the synthesis of well-crystallized, nearly pure HD by heating highly compressed graphite, which is applicable to both bulk and nanosized graphitic precursors. Experiments and theoretical analyses show that the formation of a post-graphite phase within compressed graphite and temperature gradients promote HD growth. Using this approach, a millimetre-sized, highly oriented HD block comprising stacked single-crystal-like HD nanolayers is obtained. This HD exhibits high thermal stability up to 1,100 °C and a very high hardness of 155 GPa. Our findings offer valuable insights regarding the graphite-to-diamond conversion under elevated pressure and temperature, providing opportunities for the fabrication and applications of this unique material. Synthesis of millimetre-sized hexagonal diamond has been demonstrated, facilitated by the formation of intermediate post-graphite phases and temperature gradients.","PeriodicalId":19058,"journal":{"name":"Nature Materials","volume":"24 4","pages":"513-518"},"PeriodicalIF":37.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0