Searching for a two-dimensional silver bullet

IF 37.2 1区材料科学 Q1 CHEMISTRY, PHYSICAL

Nature Materials Pub Date : 2025-04-01 DOI:10.1038/s41563-025-02178-x

Dennis H. C. Lin, Cesar Javier Lockhart de la Rosa

引用次数: 0

Abstract

Two-dimensional-materials-based gate-all-around field-effect transistors are demonstrated at the wafer scale using the high-mobility two-dimensional semiconductor Bi2O2Se and its native oxide dielectric Bi2SeO5, enabling promising performance and energy efficiency for monolithic three-dimensional integrated circuits beyond silicon.

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来源期刊

Nature Materials 工程技术-材料科学：综合

CiteScore

62.20

自引率

0.70%

发文量

221

审稿时长

3.2 months

期刊介绍： Nature Materials is a monthly multi-disciplinary journal aimed at bringing together cutting-edge research across the entire spectrum of materials science and engineering. It covers all applied and fundamental aspects of the synthesis/processing, structure/composition, properties, and performance of materials. The journal recognizes that materials research has an increasing impact on classical disciplines such as physics, chemistry, and biology. Additionally, Nature Materials provides a forum for the development of a common identity among materials scientists and encourages interdisciplinary collaboration. It takes an integrated and balanced approach to all areas of materials research, fostering the exchange of ideas between scientists involved in different disciplines. Nature Materials is an invaluable resource for scientists in academia and industry who are active in discovering and developing materials and materials-related concepts. It offers engaging and informative papers of exceptional significance and quality, with the aim of influencing the development of society in the future.