ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis最新文献_第3页

Wafer Pattern Recognition for Detecting Process Abnormalities in NAND Flash Memory Manufacturing 用于NAND快闪记忆体制造过程异常侦测的晶圆模式识别

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0406

Jeongin Choe, Taehyeon Kim, Saetbyeol Yoon, Sangyong Yoon, Ki-Whan Song, J. Song, Myungsuk Kim, Woo Young Choi

引用次数: 0

Pushing Failure Mode Stimulus to Overcome the Limitation/Boundaries of Soft Defect Localization Tools 推失效模式刺激克服软缺陷定位工具的局限性/边界

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0084

A. Norico, Rommel Estores

{"title":"Pushing Failure Mode Stimulus to Overcome the Limitation/Boundaries of Soft Defect Localization Tools","authors":"A. Norico, Rommel Estores","doi":"10.31399/asm.cp.istfa2021p0084","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2021p0084","url":null,"abstract":"\u0000 Temperature dependent failures are some of the most challenging cases that will be encountered by the analyst. Soft Defect Localization (SDL) is a technique used to analyze such temperature-dependent, ‘soft defect’ failures [1]. There are many literatures that discuss this technique and its different applications [2-7]. Dynamic Analysis by Laser Stimulation (DALS) is one of the known SDL implementations [8-11]. However, there are cases where the failure is occurring at a temperature where the laser alone is not sufficient to effectively induce a change of device behavior. In these situations, the analyst needs to think out of the box by understanding how the device will react to external conditions and to make necessary adjustments in DALS settings. This paper will discuss three cases that presents different challenges such as performing DALS analysis where the failing temperature is too high for the laser to induce a change of behavior from ambient temperature, cold temperature failure, complex triggering (Serial Peripheral Interface, SPI), and using an internal signal as input for DALS analysis. The approach used for a successful DALS analysis of each case will be discussed in detail.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128771814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-Visual Defect Identification by Dopant Analysis Method in FinFET Devices 基于掺杂分析方法的FinFET器件非视觉缺陷识别

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0359

Seungjun Son, C. Penley, J. Hurst, Chris Michon, Yong Guo, Rafael Lainez, J. Reifsnider

引用次数: 0

SCM Application and Failure Analysis Procedure for Ion-Implantation Issues in Power Devices 功率器件中离子注入问题的单片机应用及失效分析程序

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0301

Kuang-Tse Ho, Cheng-Che Li

引用次数: 0

Photon Emission Microscopy of HfO2 ReRAM Cells HfO2 ReRAM细胞的光子发射显微镜

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0115

F. Stellari, E. Wu, T. Ando, M. Frank, P. Song

引用次数: 3

Quantile Based Statistical Failure Analysis for Wafer Level Test Comparison 基于分位数的晶圆级测试比较统计失效分析

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0263

Jeongwon Bae, Minjoo Kim, Jongbum Lee, Myunghoon Oak, Choongsun Park, Sunghun Park, Sungsoo Yim, Hee-Il Hong, Jooyoung Lee

{"title":"Quantile Based Statistical Failure Analysis for Wafer Level Test Comparison","authors":"Jeongwon Bae, Minjoo Kim, Jongbum Lee, Myunghoon Oak, Choongsun Park, Sunghun Park, Sungsoo Yim, Hee-Il Hong, Jooyoung Lee","doi":"10.31399/asm.cp.istfa2021p0263","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2021p0263","url":null,"abstract":"\u0000 In semiconductor manufacturing or testing, when changing the items such as parts, materials or equipment, many engineers use the equivalence test to hedge the risk of new process. Equivalence Test Procedure (ETP) uses a modified algorithm of Cohen's d and F-ratio for comparing two test samples when it evaluates the statistical allowance in the second stage. These logics are estimated under the assumption of normality for the underlying population. However, there are many wafer level test items such as Fail Bit Count (FBC) where their populations are non-normal distribution. Because the standard deviation in the two algorithms is over-estimated in wafer level test distribution, the two algorithms fail to represent the size of difference for the two samples exactly. Therefore, we introduce quantile comparison equivalence criteria (QCEC) which is robust to overall data distribution and outlier-free. To instruct engineers about the change cause of the data distribution, we create new statistics called ‘Center or Dispersion’ (CoD) that distinguish between center difference and dispersion difference. For practical application, we conduct the case study on Dynamic Random Access Memory (DRAM) FBC data. For wafer level test 199 items, it is found that the QCEC's accuracy improves by 20% compared to the accuracy of Cohen's d. It also shows a 75% improvement over the accuracy of the F-ratio.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127526012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Early Fault-Analysis Using In-Line Raman Spectroscopy Metrology 利用在线拉曼光谱测量技术进行早期故障分析

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0203

D. Fishmana, L. Neemana, N. Meira, Y. Orena, G. Baraka, A. Avidana, J. Ofeka

{"title":"Early Fault-Analysis Using In-Line Raman Spectroscopy Metrology","authors":"D. Fishmana, L. Neemana, N. Meira, Y. Orena, G. Baraka, A. Avidana, J. Ofeka","doi":"10.31399/asm.cp.istfa2021p0203","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2021p0203","url":null,"abstract":"\u0000 As semiconductor device dimensions scale down, process variation impact on reliability becomes increasingly severe. This trend stems from the high-reliability requirements typical for advanced system applications, the narrowing process margins and the high sensitivity of devices to material and dimensional variations. At the process level, many deviations from nominal conditions can degrade the devices' reliability. Examples are induced charge traps in the various types of memory cells, electrical performance inhibitors due to lattice defects or poor stress management and poor data retention due to contamination by killer elements.\u0000 We claim that monitoring and correcting deviations throughout the fabrication process provides an effective approach for preventing reliability failures. By restricting deviations below specific threshold levels and screening out reliability and End Of line (EOL) related parameters, eventual device reliability can be safeguarded. This paper addresses the relationship between various process parameters and reliability, and reviews the enablers of preventive, early-detection inline metrology in the fab.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125445174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thickness Control and Targeting in Large Scale Automated XTEM Lamella Preparation 大规模自动化XTEM薄片制备中的厚度控制与定位

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0130

V. Dixit, B. Gauntt, Taehun Lee

{"title":"Thickness Control and Targeting in Large Scale Automated XTEM Lamella Preparation","authors":"V. Dixit, B. Gauntt, Taehun Lee","doi":"10.31399/asm.cp.istfa2021p0130","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2021p0130","url":null,"abstract":"\u0000 The automation of both, transmission electron microscopy (TEM) imaging and lamella preparation using focused ion beam (FIB) has gathered an enormous momentum in last few years, especially in the semiconductor industry. The process development of current and future microprocessors requires a precise control on the patterning of a multitude of ultrafine layers, several of which are in the order of nanometers. The statistical accuracy and reliability of TEM based metrology and failure analysis of such complex and refined structures across the wafer needs a large-scale sampling, which is feasible only with an automation. An inherent requirement of automating TEM sample preparation entails a need of a robust and repeatable methodology that provides both, a good thickness control and an accurate targeting, on the intended feature in the ultra-thin lamella. In this work, key factors that impact both these aspects of a TEM lamella preparation will be discussed. In addition, steps needed to ensure that FIB toolsets consistently and reliably produce high quality samples, will be highlighted.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126232107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio 等离子体刻蚀预处理用于高纵横比三维NAND的TEM片层制备

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0141

Yu-Chi Chen, Bing-Chang Li, Pei-Ling Hsu, Tsung-Yi Lin, I-An Chen, Chun-Hung Lin, Hsin-Cheng Hsu, C. Yeh, N. Lian, Ta-Hone Yang, Kuang-Chao Chen

引用次数: 0

Workflow Solution for Positional Characterization of 3D NAND Channel Tilt/Shift 3D NAND通道倾斜/移位位置表征的工作流程解决方案

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0342

M. Najarian

引用次数: 0