功率器件中离子注入问题的单片机应用及失效分析程序

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0301

Kuang-Tse Ho, Cheng-Che Li

{"title":"功率器件中离子注入问题的单片机应用及失效分析程序","authors":"Kuang-Tse Ho, Cheng-Che Li","doi":"10.31399/asm.cp.istfa2021p0301","DOIUrl":null,"url":null,"abstract":"\n This research summarizes failure analysis results about ionimplantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SCM Application and Failure Analysis Procedure for Ion-Implantation Issues in Power Devices\",\"authors\":\"Kuang-Tse Ho, Cheng-Che Li\",\"doi\":\"10.31399/asm.cp.istfa2021p0301\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This research summarizes failure analysis results about ionimplantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0301\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0301","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本研究总结了硅基功率器件中离子注入相关问题的失效分析结果，包括二极管、MOSFET和IGBT。为了发现这类缺陷，样品制备、故障隔离和单片机检测是关键步骤，本文将对此进行详细说明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SCM Application and Failure Analysis Procedure for Ion-Implantation Issues in Power Devices

This research summarizes failure analysis results about ionimplantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

自引率

0.00%

发文量