3D NAND通道倾斜/移位位置表征的工作流程解决方案

M. Najarian
{"title":"3D NAND通道倾斜/移位位置表征的工作流程解决方案","authors":"M. Najarian","doi":"10.31399/asm.cp.istfa2021p0342","DOIUrl":null,"url":null,"abstract":"\n Manufacturers of the emerging 3D NAND market are working to continually add more memory capacity by increasing the number of layers in the device stacks. As the device stacks get taller, the manufacturers face many challenges for creating the devices with very high aspect ratios (HAR)1 such as those shown in Figure 1. In order to monitor and improve the processes, metrology information is required for 3D analysis of critical dimensions and tilt/shift relative positions of the channels through the device height2.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Workflow Solution for Positional Characterization of 3D NAND Channel Tilt/Shift\",\"authors\":\"M. Najarian\",\"doi\":\"10.31399/asm.cp.istfa2021p0342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Manufacturers of the emerging 3D NAND market are working to continually add more memory capacity by increasing the number of layers in the device stacks. As the device stacks get taller, the manufacturers face many challenges for creating the devices with very high aspect ratios (HAR)1 such as those shown in Figure 1. In order to monitor and improve the processes, metrology information is required for 3D analysis of critical dimensions and tilt/shift relative positions of the channels through the device height2.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

新兴3D NAND市场的制造商正在努力通过增加器件堆栈的层数来不断增加内存容量。随着设备堆栈变得越来越高,制造商在创建具有非常高长宽比(HAR)1的设备时面临许多挑战,如图1所示。为了监控和改进工艺,需要计量信息来通过设备高度对关键尺寸和通道的倾斜/移位相对位置进行3D分析2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Workflow Solution for Positional Characterization of 3D NAND Channel Tilt/Shift
Manufacturers of the emerging 3D NAND market are working to continually add more memory capacity by increasing the number of layers in the device stacks. As the device stacks get taller, the manufacturers face many challenges for creating the devices with very high aspect ratios (HAR)1 such as those shown in Figure 1. In order to monitor and improve the processes, metrology information is required for 3D analysis of critical dimensions and tilt/shift relative positions of the channels through the device height2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信