ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis最新文献_第8页

Defect Inspection Wafer Notch Orientation and Defect Detection Dependency 缺陷检测晶圆缺口方向与缺陷检测依赖关系

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0403

Lindarti Purwaningsih, Philipp Konsulke, Markus Tonhaeuser, H. Jantoljak

{"title":"Defect Inspection Wafer Notch Orientation and Defect Detection Dependency","authors":"Lindarti Purwaningsih, Philipp Konsulke, Markus Tonhaeuser, H. Jantoljak","doi":"10.31399/asm.cp.istfa2021p0403","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2021p0403","url":null,"abstract":"\u0000 Defect detection and defect control are crucial for yield improvement in semiconductor industry. A discrepancy between detected defects compared to yield data regarding a common defect type was found. Historical data show a different behavior was seen on different product groups. A product design analysis on affected layer shows a striking difference in the Terminal Metal Layer (TML) line orientation between those product groups. A particle deposition system was used to distribute a fixed number of PSL spheres on to wafers prior etch process and defect inspections with different wafer notch orientations were performed at the final step. Those deposited PSL spheres prior etch process resulted in extra pattern defects at the inspection step. Extra pattern defects were mostly detected using a certain wafer notch orientation recipe to the majority of TML line orientation compared to the other one. This case study discusses the influence of a defect inspection wafer notch orientation to the defect capture rate on TML layer. Based on this result, the industry should consider the majority line orientation of respective layer on each inspection step when creating a new defect scanning recipe, especially for TML layer.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123002410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Aspect Ratio, Vertical Bipolar Junction Transistor NPN Device Fault Isolation & Analysis Techniques 高纵横比、垂直双极结晶体管NPN器件故障隔离与分析技术

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0053

Kevin A. Distelhurst, Dan Bader

引用次数: 0

Accurate Sub-micron Device Delayering of Plan View TEM Specimens By Ar Ion Milling 氩离子铣削平面透射电镜样品精确亚微米器件分层

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0135

C. Bonifacio, P. Nowakowski, R. Li, M. Ray, P. Fischione

引用次数: 0

Backside EBIRCH Defect Localization for Advanced Flip-Chip Failure Analysis 用于高级倒装芯片失效分析的背面EBIRCH缺陷定位

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0248

Chuan Zhang, Jane Y. Li, John Aguada, H. Marks

引用次数: 0

Simultaneous Interface Defect Density and Differential Capacitance Imaging by Time-Resolved Scanning Nonlinear Dielectric Microscopy 时间分辨扫描非线性介电显微镜同时成像界面缺陷密度和差分电容

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI: 10.31399/asm.cp.istfa2021p0441

K. Yamasue, Yasuo Cho

引用次数: 0