2008 IEEE International Reliability Physics Symposium最新文献_第8页

Influence of barriers on the reliability of dual damascene copper contacts 障碍对双大马士革铜触点可靠性的影响

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558984

K. Wang, C. Wilson, A. Cuthbertson, R. Herberholz, H. Coulson, A. O'Neill, A. Horsfall

引用次数: 3

Survey of characterization and metrology for nanoelectronics 纳米电子学表征与计量研究综述

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558862

A. Diebold

引用次数: 0

Failure mechanism study for high resistance gate contact in dram devices for 2008 IRPS 2008 IRPS中dram器件高阻栅极接触失效机理研究

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558951

E. Ng, E. Poh, D. Lam, Z. Xinhua

{"title":"Failure mechanism study for high resistance gate contact in dram devices for 2008 IRPS","authors":"E. Ng, E. Poh, D. Lam, Z. Xinhua","doi":"10.1109/RELPHY.2008.4558951","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558951","url":null,"abstract":"Resistive contacts and, in particular, resistive gate contacts in multilayer interconnects have been an ongoing challenge for semiconductor industries. The failing mechanisms behind them were difficult to uncover, which made it necessary to initiate deeper research into each issue that we managed to isolate. The traditional approach of using passive voltage contrast (PVC), scanning electron microscope (SEM), or focused ion beam (FIB) to identify resistance gate contacts is getting more difficult, especially for those contacts with resistance that is only marginally higher than normal contacts. In this paper, we discuss a resistive gate contact issue arising from reliability tests. Finding the root cause for the resistive gate contacts is vital to solving reliability and yield losses. Specifically, we focused on the physical failure analysis to characterize and to uncover the abnormal material behind the resistive gate contacts so we could explain the underdetermined failure mechanism. We established a novel approach to electrical characterization using conductive atomic force microscopy (CAFM). Using transmission electron microscope (TEM), we were able to directly observe the details and to identify the chemical composition of the abnormal, subtle resistive material between the contact and the gate. With these findings, we were able to fully understand the root cause of the failure mechanism and to resolve this issue.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130815537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection 恒压应力和衬底热电子注入法在HfSiON中SILC缺陷产生光谱研究

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558906

R. O'Connor, L. Pantisano, R. Degraeve, T. Kauerauf, B. Kaczer, P. Roussel, G. Groeseneken

引用次数: 27

Emerging reliability challenges in electronic packaging 电子封装中出现的可靠性挑战

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558927

D. Frear, L. Ramanathan, J. Jang, N. Owens

引用次数: 21

Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis 电子能量损失谱在半导体失效分析中失效机理研究中的应用

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558950

K. Lin, C. H. Chao, Tsui-hua Huang, Hsiu-Mei Fan, Shey-Shi Lu

{"title":"Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis","authors":"K. Lin, C. H. Chao, Tsui-hua Huang, Hsiu-Mei Fan, Shey-Shi Lu","doi":"10.1109/RELPHY.2008.4558950","DOIUrl":"https://doi.org/10.1109/RELPHY.2008.4558950","url":null,"abstract":"Electron energy loss spectrum (EELS) is widely used for material science analysis (F. R. Chen at al., 1998)(D. B. Williams et al., 1996), such as analyzing material elemental analysis and chemistry compound (Y. Mitsui et al., 1998)(M. Shimada et al., 2005). In semiconductor failure analysis, EELS provides clear evidence for investigating and identifying failure mechanisms and root cause discussions. There are three failure analysis cases in this article. The first one is the nearest atomic number failure analysis. The Z contrast of TEM image is not easy distinguished from Al (13), Si (14), which is obviously identified by EELS Al-K(1560ev) and Si-K(1839ev). [5] The second case is realized from the EELS result, the failure mechanism is silicon dioxide residue that resulted in a transistor out of specification. The third case is a barrier bridge identified by EELS mapping. From the EELS evidence, the root cause is identified as a insufficient tungsten back chemical mechanical polishing (W-back-CMP). Based on clear identification, the EELS application for failure mechanism investigation is very useful and helpful in Semiconductor Failure Analysis.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114471505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A novel multi-point NBTI characterization methodology using Smart Intermediate Stress (SIS) 基于智能中间应力(SIS)的多点NBTI表征方法

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558867

C. Schlunder, M. Hoffmann, R. Vollertsen, G. Schindler, W. Heinrigs, W. Gustin, H. Reisinger

引用次数: 23

Relaxation of localized charge in trapping-based nonvolatile memory devices 基于陷阱的非易失性存储器件中局域电荷的弛豫

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558921

M. Janai, A. Shappir, I. Bloom, B. Eitan

引用次数: 6

Carbon nanotubes as interconnects: Emerging technology and potential reliability issues 碳纳米管作为互连:新兴技术和潜在的可靠性问题

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558914

Carl V. Thompson

引用次数: 8

Prediction of early failure due to non-visual defect on time-dependent dielectric breakdown of low-k dielectrics: Experimental verification of a yield-reliability model 低k介电材料随时间变化的介电击穿的非视觉缺陷的早期失效预测:屈服可靠性模型的实验验证

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4558876

S. Yokogawa, D. Oshida, H. Tsuchiya, T. Taiji, T. Morita, Y. Tsuchiya, T. Takewaki

引用次数: 10